2018 Archived Content

• Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks
• High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization
• 823-mA/mm Drain Current Density and 945-MW/cm2 Baligas Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
• Using Distributed Energy States of Graphene Quantum Dots for an Efficient Hole-Injection Media in an Organic Electroluminescent Device
• Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics

• Performance Comparison of ${n}$ Type Si Nanowires, Nanosheets, and FinFETs by MC Device Simulation
• ${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz
• Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption
• Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio
• Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique
• Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

• TSV TransistorVertical Metal Gate FET Inside a Through Silicon VIA
• A Semi-Floating Gate Transistor With Enhanced Embedded Tunneling Field-Effect Transistor
• A 600 C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology
• Impact of Capture/Emission Time Constant at DonorAcceptor Interface on CurrentVoltage Characteristics of Hybrid Organic/Inorganic Quantum Dot Solar Cells
• Conformable ${n}$ -Channel Organic Phototransistors With Enhanced Photosensitivity and Broadened Response Range via Insertion of an Alq3 Layer

 Volume 39, Issue 9 (September 2018)

• Vertically Stacked Strained 3-GeSn
• Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process
• Solution-Processed Rb-Doped Indium Zinc Oxide Thin-Film Transistors
• Vertical ITO/SiOX/a-Si:H Photodiode-Gated Low-Temperature Polycrystalline Silicon Thin-Film Transistor Intended for In-Display Fingerprint Imaging Applications
• Electric-Induced Nonvolatile Enhancement of Lateral Photovoltaic Effect Observed in Chromium Nanofilm
• Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz
• Leaky Integrate-and-Fire Biristor Neuron

• High Performance Al0.10Ga0.90N Channel HEMTs
• A Dual-Split-Controlled 4P2N 6T SRAM in Monolithic 3D-ICs With Enhanced Read Speed and Cell Stability for IoT Applications
• Extraction of Polarization-Dependent Damping Constant for Dynamic Evaluation of Ferroelectric Films and Devices
• Self-Powered Force Sensor Based on Thinned Bulk PZT for Real-Time Cutaneous Activities Monitoring
• Vertically Integrated Reconfigurable Nanowire Arrays
• DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors

• CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications
• Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory
• Enhanced Photoresponse in Interfacial Gated Graphene Phototransistor With Ultrathin Al2O3 Dielectric
• 1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
• Fast-Response and Low-Hysteresis Flexible Pressure Sensor Based on Silicon Nanowires
• Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade

• High-Speed InP/InGaAsSb DHBT on High-Thermal-Conductivity SiC Substrate
• High-Performance and Flexible Neodymium- Doped Oxide Semiconductor Thin-Film Transistors With Copper Alloy Bottom-Gate Electrode
• Improved Stability in Perovskite Solar Cells by Solution-Processed Fluorocarbon Passivation
• A 500 C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
• Physical Model for the Steep Subthreshold Slope in Ferroelectric FETs
• Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices

 Volume 39, Issue 5 (May 2018)

• High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
• Sub-100 nm2 Cobalt Interconnects
• Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons
• Thickness Dependence of Low-Frequency Noise in MoS2 Field-Effect Transistors With Enhanced Back-Gate Control
• Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology
• Performance Analysis and Enhancement of Negative Capacitance Logic Devices Based on Internally Resistive Ferroelectrics

• ${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz
• Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
• Simultaneous Imaging and Energy Harvesting in CMOS Image Sensor Pixels
• Solution-Processed Single-Crystal Array for High-Performance Conformable Transistors
• Spiking Neural Network Using Synaptic Transistors and Neuron Circuits for Pattern Recognition With Noisy Images
• All-Two-Dimensional-Material Hot Electron Transistor

• Graphene-Based Thermionic Solar Cells
• 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
• Boosting MEMS Piezoelectric Transformer Figures of Merit via Architecture Optimization
• Demonstration of a Planar W -Band, kW-Level Extended Interaction Oscillator Based on a Pseudospark-Sourced Sheet Electron Beam
• Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation 

• Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters
• High-Responsivity Si Photodiodes at 1060 nm in Standard CMOS Technology
• Time-Resolved Measurement of Negative Capacitance
• Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors
• Negative Capacitance Carbon Nanotube FETs