2019 Archived Content
Volume 40, Issue 12 (December 2019)
- Breakdown Enhancement and Current Collapse Suppression in AIGaN/GaN HEMT by NiOx/SiNx and Al2O3/SiNx as Gate Dielectric Layer and Passivation Layer
- Enhanced Optical Performance of AIGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patters Design
- Effect of Very High-Fluence Proton Radioation on 6H-SiC Photoconductive Proton Detectors
- BiFeO3/CH3NH3Pbl3 Perovskite Heterojunction Based Near-Infrared Photodectector
- Skyrmion-Based Ultra-Low Power Electric-Field-Controlled Reconfiguarable (SUPER) Logic Gate
Volume 40, Issue 11 (November 2019)
- Oxygen Gattering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts
- Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
- High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
- Demonstration of 200-, 100-, and 50- U m Pitch Resistive AC-Coupled Silicon Detectors (RSD) With 100% Fill-Factor for 4D Particle Tracking
- Photo-Thermoelectric Thin-Film Generator and Sensor With Ultrahigh Output Voltage and Large Responsibility
Volume 40, Issue 10 (October 2019)
- Bi-Modal Variability of nFinFET characteristics During Hot-Carrier Stress: A Modeling Approach
- High-Temperature B - Ga2O3 Schottky Diodes and UVC Photodetectors Using RuO Contacts
- Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications
- Energy-Storing Hybrid 3D Vertical Memory Structure
- Determining Phosphor Temperature in Light-Emitting Diode Based on Divisional Normalized Emission Power
Volume 40, Issue 9 (September 2019)
- Implementation of Boolean Logic Functions in Charge Trap Flash for In-Memory Computing
- Thermal Transport in Superlattice Castellated Field Effect Transistors
- Enhanced Performance of Green Perovskite Quantum Dots Light-Emitting Diode Based on Co-Doped Polymers as Hole Transport Layer
- Ultrahigh-Performance Solar-Blind Photodetector Based on a-Phase-Dominated GA2O3 Film with Record Low Dark Current of 81 fA
- Lateral 1.8 kV B-Ga2O3 MOSFET with 155 MW/cm2 Power Figure of Merit
Volume 40, Issue 8 (August 2019)
- Monolithic Integration of Self-Biased C - Band Circulator on SiC Substrate ofr GaN MMIC Applications
- Understanding the Threshold Voltahe Instability During OFF-State Stress in p-GaN HEMTs
- SRAM With Buried Power Distribution to Improve Write Margin and Performance in Advanced Technology Nodes
- Physically Transient Memristor Synapse Based on Embedding Magnesium Nanolayer in Oxide for Security Neuromorphic Electronics
- Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics
Volume 40, Issue 7 (July 2019)
- A Memristor-Based In-Memory Computing Network for Hamming Code Error Correction
- Design Optimization and Modeling of Charge Trap Transistor (CTTs) in 14 nm FinFET Technologies
- Efficient Hole Injection of MoOx-Doped Organic Laver for Printable Red Quantum Dot Light-Emitting Diodes
- Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch
- Neuro-Mimetic Dynamics of a Ferroelectric FET-Based Spiking Neuron
Volume 40, Issue 6 (June 2019)
- Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
- Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications
- Enhanced Heat Dissipation of High-Power Light-Emitting Diodes by Cu Nanoparticle Paste
- Demonstration of a Watt-Level Traveling Wave Tube Amplifier Operating Above 0.3 THz
- Efficient THz On-Chip Absorption Based on Destructive Interference Between Complementary Meta-Atom Pairs
Volume 40, Issue 5 (May 2019)
- Physically Transient Memristive Synapse With Short-Term Plasticity Based on Magnesium Oxide
- A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 NM FD-SOI Technology
- Infrared Phototransistor Induced by MoS2 Quantum Dots Encapsulated in Lead Iodide Perovskite
- Impact of Dopant Aggregation on the EL of Blue Flourescent Host-Dopant Emitters
- Selective-Assembling Hybrid Porphyrin-Silicon Nanowire Field-Effect Transistor (PSNFET) for Photonic Sensor
Volume 40, Issue 4 (April 2019)
- Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
- High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
- LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing
- White Light-Emitting Diodes With High Color Quality Fabricated Using Phosphor-in-Glass Integrated With Liquid-Type Quantum Dot
- Reconfigurable Field-Effect Transistor as a Synaptic Device for XNOR Binary Neural Network
Volume 40, Issue 3 (March 2019)
- Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability
- Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors
- High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition
- Low-Voltage Oxide-Based Synaptic Transistors for Spiking Humidity Detection
- Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
Volume 40, Issue 2 (February 2019)
- Solution-Processed Transparent CuO Thin Films for Solar-Blind Photodetection
- Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon
- 3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
- p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing
- Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
Volume 40, Issue 1 (January 2019)
- Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing
- A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors
- SnSe/SiO2/Si Heterostructures for Ultrahigh-Sensitivity and Broadband Optical Position Sensitive Detectors
- Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
- Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors