2021 Archived Content

Volume 42, Issue 12 (December 2021)  

• Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs with Superior nFET and pFET Performance 
• 1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-avalanche AlGaN/GaN Schottky Diode 
• Low-voltage p-i-n GaN-based Alpha-particle Detector with High Energy Resolution
• Demonstration of a p-type Ferroelectric FET with immediate read-after-write capability
• VHF and UHF Lithium Niobate MEMS Resonators Exceeding 30 dB of Passive Gain 

 

Volume 42, Issue 11 (November 2021)  

• Experiments of a Lateral Power Device with Complementary Homogenization Field Structure 
• Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors 
• A Temperature Sensor with a Thermillator 
• A 250-Watts, 0.5-THz continuous-wave second-harmonic gyrotron
• Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection 

 

Volume 42, Issue 10 (October 2021)  

• Field Effect-Controlled Space-Charge Limited Emission Triode with Nanogap Channels
•  Direct Fabrication of Stretchable Electronics on a Programmable Stiffness Substrate with 100% Strain Isolation
• Low-cost, printed memristor using indigo and a dispersion of colloidal graphite deposited by spray coating
• Hot-Electron-Induced Punch-through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

• Simulations of Statistical Variability in n-type FinFET, Nanowire and Nanosheet FETs

 

Volume 42, Issue 9 (September 2021)  

• High Speed and Large Memory Window Ferroelectric HfZrO2 FinFET for High-Density Nonvolatile Memory
• Noise Detection System Based on Noise Triboelectric Nanogenerator and Synaptic Transistors
• A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals
• Two Memristors-based XOR Logic Demonstrated with Encryption/Decryption

• Stacked-Interconnect for Monolithic Integration of Low-Temperature Polysilicon and Amorphous Metal-Oxide Thin-Film Transistors

 

Volume 42, Issue 8 (August 2021)  

• Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells
• Enhancing Heat Dissipation of Quantum Dots in High-Power White LEDs by Thermally Conductive Composites Annular Fins
• Highly Sensitive DNA Detection Beyond the Debye Screening Length using CMOS Field Effect Transistors

• Low Thermal Resistance (0.5 K/W) Ga2O3 Schottky Rectifiers with Double-Side Packaging

 

Volume 42, Issue 7 (July 2021) 

• Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors
• Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube
• Chaos and hyperchaos in a Ka-band gyrotron
• Experimental Demonstration of Gyrotron Frequency Stabilization by Resonant Reflection
• Ferroelectric HfO₂ Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles

 

Volume 42, Issue 6 (June 2021) 

• Physical Unclonable Functions using Ferroelectric Tunnel Junctions
• Resistive Random Access Memory Filament Visualization and Characterization using Photon Emission Microscopy
• Reducing Asymmetric Memory Window between Si-Based n- and p-FeFETs with Scaled Ferroelectric HfZrOx and AlON Interfacial Layer
• A 0.19e- rms Read Noise 16.7Mpixel Stacked Quanta Image Sensor with 1.1μm-Pitch Backside Illuminated Pixels
• Enhanced light trapping in conformal CuO/Si microholes array heterojunction for self-powered broadband photodetection

 

Volume 42, Issue 5 (May 2021) 

• Vertical InGaAs Biristor for sub-1 V Operation 
• Amorphous ZrO2 Tunnel Junction Memristor with A Tunneling Electroresistance Ratio above 400
• Room Temperature Acetone-sensing Properties of Ru-doped MoSe2 Nanoflowers: Experimental and Density Functional Theory Studies
• Micro Humidity Sensor based on a GaN Chip with Silica Opal
• Kilowatt-range Picosecond Switching Based on Microplasma Devices

 

 Volume 42, Issue 4 (April 2021) 

•  High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor with Hafnium Oxide Gate Dielectric
•  Transient measurement of GaN HEMT drift region potential in the high power state
•  A Rate-Integrating Honeycomb Disk Resonator Gyroscope with 0.038°/h Bias Instability and ±7000°/s Measurement Range
•  Demonstration of a High-Power and Wide-Bandwidth G-band Traveling Wave Tube with Cascade Amplification
•  Reconfigurable Physical Unclonable Function Based on Spin-Orbit Torque Induced Chiral Domain Wall Motion

 

Volume 42, Issue 3 (March 2021) 

• V2C-Based Memristor for Applications of Low Power Electronic Synapse
• Four-Bits-per-Memory One-Transistor-and-Eight -Resistive-Random-Access-Memory (1T8R) Array
• In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability
• A Lumped-Parameter Equivalent Circuit Model for Perovskite Solar Cells’ S-Shaped I-V Kinks
• Blue Molecular Emitter-Free and Doping-Free White Organic Light-Emitting Diodes with High Color Rendering

 

Volume 42, Issue 2 (February 2021)

• A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach
• Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
• There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
• Egg-White-Based Polymer Memristors With Competing Electronic-Ionic Effect and Timescale-Dependent Current Modulation
• Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube

 

Volume 42, Issue 1 (January 2021)

• Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation from Measured Data
• Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters
• Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO
• SrSnO3 Metal-Semiconductor Field-Effect Transistor with GHz Operation
• The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC