2022 Archived Content

Volume 43, Issue 12 (December 2022)   

• Demonstration of Multiply-Accumulate Operation with 28 nm FeFET Crossbar Array
• An Oxide based Spiking Thermoreceptor for Low-power Thermography Edge Detection
• Photolithographic Transparent Flexible Graphene Oxide/PEDOT:PSS Electrode Array for Conformal Organic Transistor

• Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs

• Viscosity sensors based on III-nitride optical devices integrated with droplet sliding channels

  

Volume 43, Issue 11 (November 2022)   

• Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack

• Artificial Vision Adaptation Based on Optoelectronic Neuromorphic Transistors

• Quaternary Logic Circuits Based on Low-Voltage Programmable/erasable Four-Level Organic Transistor Nonvolatile Memories

• Temperature Regulated Artificial Neuron Based on Memristor

• A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

 

Volume 43, Issue 10 (October 2022)   

• Low Resistance Ohmic contact on epitaxial MOVPE grown β-Ga2O3 and β-(Alx Ga1-x)2O3 films

• Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory

• Avalanche-mode Si Light-emitting Transistor for narrow-band Emission Near 760 nm

• Asymmetric Metal Halide Film with Suppressed Leakage Current for High Sensitive X-ray Detection and Imaging

• A Performance Enhancement Method for MEMS Thermopile Pirani Sensors through In-Situ Integration of Nanoforests 

 

Volume 43, Issue 9 (September 2022)   

• Enhanced hole transport in Ni/Y₂O₃/n-4H-SiC MOS for self-biased radiation detection

• Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO₂

• Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications

• Demonstration of the longwave type-II superlattice InAs/InAsSb cascade photodetector for high operating temperature

• Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

 

Volume 43, Issue 8 (August 2022)   

• Steep Switching Si Nanowire p-FETs with Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

• Low-Temperature Solution-Processed Lu2O3 Films for Deep-UV Photovoltaic Detectors with High Sensitivity

• A Highly Responsive Hydrogen-Terminated Diamond Based Phototransistor

• Detection of DNA Hybridization Beyond the Debye Screening Length by CMOS Capacitive Sensors

•  Sheet Electron Optical System for a 1.03-THz Traveling-Wave Tube

 

Volume 43, Issue 7 (July 2022)   

• Nonvolatile Frequency-Programmable Oscillator with NbO₂ and Li-based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System

• A ScAlN Piezoelectric High-Frequency Acoustic Pressure-Gradient MEMS Vector Hydrophone With Large Bandwidth

• Phased array based on AlScN Piezoelectric Micromachined Ultrasound Transducers monolithically integrated on CMOS

• Mitigating Tunneling Leakage in Ultrascaled HfS₂ pMOS Devices with Uniaxial Strain

•  A high responsivity self-powered solar-blind DUV photodetector based on a nitrogen-doped graphene/β-Ga2O3 microwire p–n heterojunction

 

Volume 43, Issue 6 (June 2022)  

• Non-Volatile Flash Memory on Ge with an Oxidation-induced Self-assembled Charge Trapping Layer

• Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs 

• Controlling of Avalanche Dark Carriers in Realizing Hot Single Photon Detector

• Investigation of Random Telegraph Noise under Different Programmed Cell Vt levels in Charge Trap Based 3D NAND Flash 

• Broadband Graphene Field-Effect Coupled Detectors: from Soft X-ray to Near-Infrared

• Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

 

Volume 43, Issue 5 (May 2022)  

• Field-Free Deterministic Writing of Spin-orbit Torque Magnetic Tunneling Junction by Unipolar Current

• 875-MW/cm² Low-Resistance NO₂ p-type Doped Chemical Mechanical Planarized Diamond MOSFETs

• 70-μm-Body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

• Terahertz Power Module Based on 0.34 THz Traveling Wave Tube

• Flexible Nanocellulose Gated Pseudo-diode for Neuromorphic Electronic Application

 

Volume 43, Issue 4 (April 2022)  

• An ultra-short dense paraxial bunch of sub-relativistic runaway electrons

• 2.8kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-layer

• High-Performance Dual-Gated Single-Layer WS₂ MOSFETs with Bi Contacts

• Experimental Testing of the European TH1509U 170-GHz 1-MW CW Industrial Gyrotron – Long Pulse Operation

• Improving Drain-induced Barrier Lowing Effect and Hot Carrier Reliability with Terminal Via Structure on Half-Corbino Organic Thin-Film Transistors

 

Volume 43, Issue 3 (March 2022) 

• High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers

• Improved X-band Performance and Reliability of a GaN HEMT with Sunken Source Connected Field Plate Design

• III-Nitride Microsensors for 360° Angle Detection

• Foundry Integration of Carbon Nanotube FETs with 320 nm Contacted Gate Pitch using New Lift-off-free Process

• Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

 

Volume 43, Issue 2 (February 2022) 

• Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
• Critical backscattering length in Nanotransistors

• Micron-scale Resolution Image Sensor Based on Flexible Organic Thin Film Transistor Arrays via Femtosecond Laser Processing

• A 2.2kV Organic Semiconductor-based Lateral Power Devices

 

Volume 43, Issue 1 (January 2022) 

• Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors with High Speed, High Density, and Large Memory Window 
• High Detectivity and Fast Response UV Detector using Ga doped SnO2 Nanowire Arrays 
• UV-enabled Multibit Organic Transistor Memory with High Controllability and Stability
• Resistive Switching Devices Producing Giant Random Telegraph Noise
• Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing