Editor-in-Chief and Editors

David K. Abe (M’88–SM’12) received the B.Sc. degree in engineering from Harvey Mudd College in 1981, M.S. in electrical engineering from the University of California, Davis in 1988, and Ph.D. in electrical engineering/electrophysics from the University of Maryland in 1992. Since 1997, he has been at the U.S. Naval Research Laboratory (NRL), Washington, DC, where he directs a multidisciplinary group of scientists and engineers as head of the Electromagnetics Technology Branch. The Branch carries out research and exploratory development on radio-frequency concepts, materials, devices, components, and circuits in the frequency range of 1 MHz to approximately 1 THz with focused efforts in wide and narrow bandgap semiconductor electronics, carbon-based and other novel lower dimensional electronic materials, tunable and reconfigurable materials and circuits, control components, electron emission physics, electron beam-wave interactions (vacuum electronics), and electromagnetic theory and computational techniques. Dr. Abe’s current research involves the generation of coherent microwave and millimeter-wave radiation resulting from the interaction of axially-streaming electron beams with novel electromagnetic structures, with a particular emphasis on multiple-beam devices. Prior to NRL, Dr. Abe worked on interdisciplinary projects in pulsed power, explosive-driven magnetic flux compression, high power microwave generation, and electromagnetic effects at the Lawrence Livermore National Laboratory, Berkeley Research Associates, and the U.S. Army Research Laboratory (ARL), Adelphi, MD. He was a co-guest editor of the IEEE Transactions on Plasma ScienceTenth Special Issue on High Power Microwave Generation and co-edited the Proceedings of the 7th Workshop on High Energy Density and High Power RF (RF2005). He served as the Technical Chair of the IEEE International Conference on Vacuum Electronics (IVEC) in 2012 and as the General Chair of IVEC 2014. He is a member of the IEEE Electron Devices Society Technical Committee on Vacuum Electronics, was an elected member of the IEEE Nuclear and Plasma Sciences Society (NPSS) Administrative Committee from 2008 to 2011, and served multiple terms as an elected member of the NPSS Plasma Science and Applications Executive Committee (2005–2007, 2008–2011, 2013–2015). He was a recipient of a Thomas J. Watson Fellowship, two NRL Technology Transfer Awards, and numerous official commendations and distinguished contribution awards from the Army and Navy.

Constantin Bulucea (S'69–M'70–SM'88–F'04- LF'13) was born in Romania, where he received the M.S. and Ph.D. degrees in Electronics from thePolytechnic Institute of Bucharest in 1962 and 1974, respectively. In 1969, hewas granted a one-year government scholarship at the University of California, Berkeley,where he received a M.S. degree in Electrical Engineering. His activeprofessional career spanned 50 years, equally split across the Romanian and USsemiconductor histories.

In Romania, Dr. Bulucea was the scientific director anddirector of the R&D Institute for Electronic Components (ICCE) between 1974and 1986, with assignments of national importance, such as the introduction ofsilicon transistor technology and the development of the process technology forthe Microelectronica MOS/VLSI plant. From that period, his personal legacy includes the creation of theAnnual Conference for Semiconductors (CAS), now an international IEEE event, agraduate course and a book on Linear Integrated Circuits and reference paperson surface breakdown and hot-carrier injection in silicon, originallycommunicated at IEDM and later published in the IEEE Transactions on ElectronDevices and Solid-State Electronics.

In the US, Dr. Bulucea remained on the technical side of thesemiconductors business, so enjoying the last years of Silicon Valley's "HappyScaling". In particular, at NationalSemiconductor, he was the architect of company's 0.25, 0.18, and 0.13 µm CMOSprocesses for analog and mixed-signal applications. Before that, he brought to completionSiliconix's device/process architecture for the next generation of trench powerDMOS transistors, which became an industry standard in the followingyears. He has been active on the R&Darena as a direct contributor and also as the 2003 chairman of the Advanced Devicesand Technologies thrust of the Semiconductor Research Corporation (SRC) and asa member of the Technical Committees of the Bipolar Circuits and TechnologyMeeting (BCTM) and of the VLSI Technology Symposium. Between 2004 and 2012 hewas the editor of IEEE Electron Device Letters (EDL) for analog andmixed-signals technology. Dr. Bulucea has published over 50 technical articlesin international journals and holds 67 US patents with several others pending.

In 2001 Dr. Bulucea was elected an Honorary Member of theRomanian Academy and in 2004 became an IEEE Fellow "for contributions totransistor engineering in the area pf power electronics". In 2011, he became aDistinguished Member of the Technical Staff of Texas Instruments (TI), as aresult of TI's acquisition of National Semiconductor. Dr. Bulucea retired from TI next year, on his72nd birthday, continuing to support company's patent applications that he had authored.

Lecture Topics:

1. “Physics and Technology of Sub-0.25-mm CMOS Devices” (UC Davis Seminar, 2001).

2. “Electronic Properties of Silicon and other <Known Materials>” (Stanford Center for Integrated Research, 2003).

3. “TCAD Revisited – An Engineer’s Point of View” – Excellence in Computer Simulation Symposium of the Network for Computational Nanotechnology (UC Berkeley, 2007).

4. “Devices and Processes for Mixed Signals” (UC San Diego Seminar, 2003 and 2010).

5. Eastern Europe’s Semiconductor Technology - Recollections and Projections (Keynote Address, ESSDERC/ESSCIRC, Bucharest 2013).

Lecture Topics:  1. The Variability Issues of Small Scale CMOS Devices 2. Extension of Moore's Law Via Strained Technologies 3. Fundamentals of RTN and Its applications to CMOS and Nonvolatile Memories 4. Random Dopant Variations of Trigate CMOS Devices

Biography:  STEVE S. CHUNG (S'83-M'85-SM'95-F'06) received his Ph.D. degree from the University of Illinois at Urbana-Champaign, in Electrical Engineering in 1985. His Ph.D. thesis advisor is the world-famous scholar and CMOS Co-Inventor, Prof. C. T. Sah.

Currently, he is a Chair Professor and UMC Research Chair Professor at the National Chiao Tung University (NCTU).  After joining NCTU in 1987, he has been the first Department Head of EECS Honors Program, to promote an undergraduate program for academic excellence from 2004-2005. Later, he was also the Dean of International Affairs Office, Executive Director of school level research center, between 2007-2008. He was a Research Visiting Scholar with Stanford University in 2001, visiting professor to University of California-Merced in 2009-2010, and a guest lecturer at Stanford in the Fall of 2009. He was also the consultant to the two world largest IC foundries, TSMC and UMC, on developing CMOS and flash memory technologies. His recent current research areas include- nanoscale CMOS devices and technology; nonvolatile memory technology and reliability; and reliability physics/interface characterization. He has published more than 220 journal and conference papers, one textbook, and holds more than 20 patents. Since 1995, he has presented more than 22 times in the IEEE flagship conferences, IEDM and VLSI. In particular, he was the first (from Taiwan) to present the paper at VLSI Technology symposium in 1995.

He is an IEEE Fellow, the current IEEE EDS BoG(Board of Governor) member, IEEE Distinguished Lecturer, EDS Regions/Chapters Chair, and with past involvement as EDS AdCom member (2004-2009), EDS Regions/Chapters Vice-Chair, Guest Editor of TDMR, and Editor of EDL(2002-2008). He has served on various IEEE conference committees, e.g., VLSI Technology, IEDM, IRPS, IPFA, ICMTS, SNW, VLSI-TSA etc. Also, he has served as the TPC Vice-Chair and subsequently the organizing member of SSDM in Japan. ED Taipei chapter was awarded the 2002 EDS Chapter of the Year Award under his leadership as the chapter chair. He was awarded 3 times outstanding Research Award, distinguished PI, and distinguished NSC Research Fellow, from the National Science Council, as well as Distinguished EE Professor and Engineering Professor of the Engineering Societies in Taiwan. More recently, he was also honored the recipient of 2013 Pan Wen Yuan award in recognizing his outstanding achievements in the semiconductor research.

Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

Lecture Topics: 1) Nanowire electronics: the future of CMOS technology 2) Green Transistors for energy efficient integrated circuits 3) Can Bipolar Transistors be made without doping? 4) Tunnel field effect transistors: Design and Optimization 5) Trench power MOSFETs: Design and Optimization 6) Perspectives on the evolution of semiconductor manufacturing: Enabling the impossible

Dr. Kumar is currently the NXP (Philips) Chair Professor established at IIT Delhi by Philips Semiconductors, Netherlands (now NXP Semiconductors India Pvt Ltd). He was the Co-ordinator of VLSI Design, Tools and Technology interdisciplinary program. He is a Chief Investigator of the Nano-scale Research Facility (NRF) at IIT Delhi. Dr. Kumar received the 2013 Award for Excellence in Teaching (in large class category) from IIT Delhi. He works in the area of Nanoelectronic Devices, Device modeling and simulation, IC Technology and Power semiconductor devices. He has published extensively in the above areas with four book chapters and more than 160 publications in refereed journals and conferences. He is on the Editorial Board of Scientific Reviews, an online and open access primary research publication from the publishers of Nature. He is an Editor of IEEE Transactions on Electron Devices and the Editor-in-Chief of IETE Technical Review. Dr. Kumar is a Fellow of Indian National Academy of Engineering, The National Academy of Sciences, India, and The Institution of Electronics and Telecommunication Engineers, India. He has been awarded the 29th IETE Ram Lal Wadhwa Gold Medal for distinguished contribution in the field of Semiconductor device design and modeling. He has received the first ever ISA-VSI TechnoMentor Award given by the India Semiconductor Association to recognize a distinguished Indian academician and researcher for playing a significant role as a mentor and researcher. He is a recipient of 2008 IBM Faculty award in recognition of professional achievements. He has delivered a number of invited lectures in conferences and workshops in India and abroad to large audiences on topics related to Nanoelectronics. For more details on Dr. Kumar, you can visit http://web.iitd.ac.in/~mamidala

Stanislav A. Moshkalev (M`99) received the B.S. and M.S. degree in quantum electronics from St. Petersburg Polytechnic University, St. Petersburg, Russia, in 1975 and the Ph.D. degree in physics and chemistry of plasmas from A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, in 1984.

Since 1984, he held research positions in several scientific institutions in Russia, UK and Brazil. Since 1999, he has been a Researcher and since 2010, an Associate Director of the Center for Semiconductor Components, at the UNICAMP - State University of Campinas, Brazil. He is the coeditor of one book, and the author of more than 65 articles, and 5 inventions. His research interests include micro and nanofabrication and characterization, synthesis and characterization of carbon nanotubes and graphene, quantum dots, processing by focused ion, electron and laser beams, AFM, Raman spectroscopy, plasmas for etching and deposition, lithography, thin films, chemical, optical and bio sensors with ultralow power consumption, MEMS and NEMS, microfluidics, novel electron devices (memory, phototransistors, sensors) based on nanostructured carbon materials.

Dr. Moshkalev is a member of IEEE, Brazilian Physical Society, Brazilian Microelectronics Society, and Brazilian Carbon Association. He is currently a coordinator of the Cooperative Research Network in Nanoinstrumentation (Brazil, CNPq - National R&D Council) and of the Associated Nanotechnology Laboratory of the Ministry of Science, Technology and Innovations (Brazil). Dr. Moshkalev’s awards and honors include the Researcher Fellowship from CNPq and the Distinguished Visiting Researcher Fellowship from IRCEP (the Queen´s University of Belfast, UK).

Lecture Topics: New Material Based Micro/Nano Devices Flexible Electronics Novel Acoustic and RF Devices Non-volatile Memory

Biography: Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.

He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.

For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.

He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).

Enrico Sangiorgi (F’05) received the Laurea degree in electrical engineering from the University of Bologna, Italy, in 1979. In 1983, 1984, and 1991, he was a Visiting Scientist at the Center for Integrated Systems, Stanford University, Stanford, California, for approximately three years. From 1985 to 2001, he was a consultant at Bell Laboratories, Murray Hill, NJ, where he was a Resident Visitor for more than three years. In 1993, he was appointed Full Professor of Electronics at the University of Udine, Italy, where he started the Electrical Engineering Program and the microelectronic group. In 2002, he joined the University of Bologna, where he is currently in charge of the nanomicro- electronics group at the Campus of Cesena. From 2005 to 2011 he has been the Director of Consorzio Nazionale Interuniversitario per la Nanoeletronica (IU.NET – Italian Universities Nanoelectronic Team), a Legal Consortium grouping nine University Groups active in the field of Nanoelectronics. In 2005 he has been appointed member of the CATRENE Scientific Committee. Since 2006 he is the Vice Chairman of the Scientific Community Council (SCC) of ENIAC (the European Nanoelectronics Initiative Advisory Council). In 2007 he has been appointed member of the Steering Board of AENEAS, the private section of the ENIAC European Technology Platform. In 2008 he has been appointed CEO of Rinnova srl., a new company founded by the University of Bologna aiming to bring research and innovation to SME’s. From 2008 to 2012 he has been the Dean of the Second School of Engineering at the University of Bologna. In 2012 he has been appointed Director of the Department of Electrical and Electronic Engineering – Guglielmo Marconi – of the University of Bologna. Since 2014 he is the Director of the SINANO Institute, International Organization grouping 23 European Institutions active in the field of nanoelectronics.

From 1994 to 2009 he has been Editor of IEEE Electron Device Letters. He has been the Guest Editor of several Special Issues on major scientific journals such as IEEE Transactions on Electron Devices, Solid State Electronics, etc. He has been a member of the Technical Committees of several International Conferences on Electron Devices: IEDM (’91-96; ’04-’06), ESSDERC (‘99-present), INFOS (’95-03), ULIS (’00-‘08), etc. Since 2011 he is a member of the Steering Board of the IEEE Journal of Photovoltaics.

Enrico Sangiorgi is a Fellow of the IEEE, Distinguished Lecturer of the Electron Device Society, he has been Chairman of the Electron Device Society TCAD Technical Committee from 2004 to 2011 member of the Cledo Brunetti Award Committee and Education Award Committee of the EDS. Since 2011 he is elected member of the EDS AdCom. Since 2013 he is a member of the EDS Fellows Evaluation Committee. He has been involved in several European Projects of the 5, 6, and 7 FP with Management Responsibilities, and he has acted as Project Reviewer for the European Commission. The research interests of Enrico Sangiorgi, developed in cooperation with research centers and companies such as Bell Labs., Philips, Infineon Tech., ST Microelectronics, IMEC, and CEA-LETI, include the physics, characterization, modeling, and fabrication of silicon solid-state devices and integrated circuits. In particular he has been working on several aspects of device scaling, its technological, physical, and functional limits, as well as device reliability for silicon CMOS and bipolar transistors. In order to tackle and eventually overcome the hurdles of device scaling, down to the ultimate physical and technological limits, he has devised and developed several original concepts and methods in the characterization and modeling of nanoscale silicon devices. Recently his interests included the physics and modeling of Photo-voltaics devices where he has worked on several aspects of device optimization. Enrico Sangiorgi coauthored 34 papers presented at the International Electron Devices Meeting (IEDM) Conference, and overall more than 250 papers on major journals and conference proceedings.

Lecture Topics: Nanodevices modeling and simulation Photovoltaics devices and technologies Energy Harvesting devices, technologies and systems

Rajendra Singh(S'75-M'78-SM'82-F'02) received the B.S. degreefrom Agrac University, Agra, India, in 1965, the M.S. degree in physics(electronics-wireless as the special subject) from the Meerut University, India,in 1968, the M.S. degree in physics (thesis on superconductivity) from theDalhousie University, Halifax, NS, Canada, and the Ph.D. degree inphysics (dissertation on solar cells) from McMaster University, Hamilton, ON,Canada, in 1979. Dr. Singh is currently D. Houser Banks Professor inthe Department of Electrical and Computer Engineering and the Director of the Center forSilicon Nanoelectronics at Clemson University. With proven success in operations, project/program leadership, R&D, product/process commercialization, and start-ups, Dr. Singh is a leading semiconductor and photovoltaic (PV) and expert with over 33 years of industrial andacademic experience of photovoltaic and semiconductor industries. The technology invented byDr. Singh at Energy Conversion Devices (US Patent No. 4419533. South African Patent No.830748; Great Britain Patent No. 2116364) is used in the manufacturing of amorphous thin filmPV modules sold by United Solar. The technology invented by Dr. Singh (US Patens #.5, 820,942, 1998& # 5, 980, 637, 1999) has been licensed to RTP tool manufacturer AG Associates(prototype tool developed in his Lab)...From solar cells to integrated circuits, he has led thework on semiconductor and photovoltaic device materials and processing by manufacturableinnovation and defining critical path.

He has published over 330 papers in various journals and conference proceedings. He is editoror coeditor of more than fifteen conference proceedings. He has presented over 50 keynoteaddresses and invited talks in various national and international conferences. He has served on anumber of committees of various professional societies. Currently he is serving as Chair of IEEEElectron Devices Society Technical Committee on Semiconductor.

Part of Prof. Singh's awards and honors include IEEE distinguished Lecturer for Latin Americanon Solar Cells (Region 9) 1983, Distinguished Technologist United Nations DevelopmentProgram (1987), IEEE Electron Device Society distinguished Lecturer (1994-2012), andoutstanding Researcher Award, Clemson University, Sigma Xi Chapter (1997), five ClemsonUniversity awards for Faculty Excellence, Thomas D. Callinan Award of the ElectrochemicalSociety (1998), J.F. Gibbons Award from the 11th IEEE International Conference onAdvanced Thermal Processing of Semiconductors (2003), and the 2005 McMaster UniversityDistinguished Alumni Award. Photovoltaics World (October 2010) selected him as one of the10 Global "Champions of Photovoltaic Technology". He is Fellow of the Society of OpticalEngineering, American Association for the Advancement of Science, and American Society ofMetals, ASM.

Lecture Topics: Photovoltaics as dominant electricity generation technology in 21st century sub 10 nm semiconductor manufacturing Wide Band Gap Based Semiconductor Manufacturing Bottom Up Based Nanostructures: Manufacturing challanges Nanosystems: Manufacturing Challanges and Opportunities