Editor-in-Chief and Editors

Subhananda Chakrabartir received his M.Sc. and Ph.D. degrees from the Department of Electronic Science, University of Calcutta, Kolkata, India in 1991 and 2000, respectively. He was a Lecturer in the Dept. of Physics, St. Xavier’s College, Kolkata. He has been a Senior Research Fellow with the University of Michigan, Ann Arbor, from2001 to 2005, a Senior Researcher with Dublin City University, Dublin City, Ireland, from 2005 to 2006, and a Senior Researcher (RA2) with the University of Glasgow, Glasgow, U.K., from 2006 to 2007. He joined as an Assistant Professor in the Department of Electrical Engineering, IIT Bombay, Mumbai, India, in 2007.Presently, he is a Professor in the same department. He has extensively researched in molecular beam epitaxial(MBE) growth, characterization, and fabrication of compound (III-V) GaAs-based semiconductor optoelectronic materials and devices, such as intersubband infrared photodetectors etc. He has been the first to demonstrate complete indigenous development Infrared Photodetector based Focal Plane Array in India. In II-VI (ZnO) based research, he has demonstrated stable p-doping through Plasma Immersion Ion Implantation (PIII) technique and subsequently demonstrated a homojunction ZnO-based UV-LED. He is a fellow of the Institution of Electrical and Telecommunication Engineers (IETE) India, Member of the IEEE, MRS USA, SPIE USA etc. He is the medal recipient of the Materials Research Society of India. Recently, he was awarded NASI-Reliance Industries Platinum Jubilee Award for Application Oriented Innovations in Physical Sciences for the year 2016. He has authored more than 200 papers in international journals and conferences. He has also co-authored a couple of book chapters on intersubband quantum dot detectors. His four (4) research monographs with Springer are in press. Dr. S. Chakrabarti has served as reviewer for a number of international journals of repute such as Applied Physics Letters, Nature Scientific Report, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Journal of Alloys and Compound, Material Research Bulletin etc.

Lecture Topics: 

- Nano-device physics and technology 
- Device modelling and circuit simulation 
- Interconnect Technology
- Non-volatile memory technology 
- Bio-sensors and circuits

Biography:  Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology.  After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model.  Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program.  In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model.  In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform.  He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.

Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.

Kangguo Cheng (Fellow, IEEE) received the bachelor’s degree and the master’s degree from Tsinghua University, China, in 1995 and 1997, respectively, and the Ph.D. degree from University of Illinois at Urbana-Champaign in 2001.

His career started at IBM Semiconductor Research and Development Center (SRDC), Fishkill, NY. He worked on the development of vertical transistor DRAM, and later development of embedded DRAM (eDRAM) for high performance applications. In 2008 he moved to IBM Research at Albany, NY, working on a variety of technologies, including fully depleted SOI (FDSOI), FinFET, gate-all-around (GAA), emerging memories, artificial intelligence (AI) hardware, field-programmable gate array (FPGA), and emulation and prototyping of system-on-chip (SoC) chips. He is one of world’s top prolific inventors with over 2500 issued US patents. He coauthored overall more than 100 papers, two book chapters, and gave multiple invited talks. 

Dr. Cheng served as a Chair of Semiconductor Invention Review Board of IBM. He also served on multiple international conference committees in semiconductor technology. He has received Invention Achievement Awards (IAA) and Outstanding Technology Achievement Award (OTAA) from IBM. He is a recipient of 2021 IEEE Paul Rappaport Award. He is a Master Inventor of IBM, a member of IBM Academy of Technology (AoT), and a Fellow of the IEEE Electron Devices Society.

Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

Kaustubh Joshi (Member, IEEE) received his PhD from IIT Bombay, India in 2014.

From 2014 to 2020 he worked at TSMC, Taiwan as a Principal Engineer at Technology Quality and Reliability Division. Since 2020 he is working as Quality and Reliability R&D Engineer at Intel Corporation, Hillsboro. His primary focus has been on understanding reliability degradation in highly scaled transistors and building models and methodologies to understand device reliability. He has co-authored over 25 papers with nearly 1000 citations in the field of device reliability physics. His research interest includes physics, characterization, modelling of reliability of scaled transistors and high power III-V devices. Dr. Joshi has also served in various JEDEC committees and chair/vice-chair at IRPS conference.

Ming-Dou Ker (F’08) received the Ph. D. degree from the Institute of Electronics, National Chiao Tung University (NCTU), Hsinchu, Taiwan, in 1993. Now, he is the Distinguished Professor in the Institute of Electronics, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan, and also the Director of Biomedical Electronics Translational Research Center, NYCU, working on biomedical electronics translational projects. In the technical field of reliability and quality design for semiconductoir devices and integrated circuits, he has authored/co-authored over 600 technical papers in international journals and conferences. He has proposed many solutions to improve the reliability and quality of integrated circuits, which have been granted with hundreds of U.S. patents. He had been invited to teach and/or to consult the reliability and quality design by hundreds of design houses and semiconductor companies in the worldwide IC industry. Some of his inventions or designs had been widely used in the modern IC products and microelectronics systems. His current research interests include the reliability and quality design for nanoelectronics and gigascale systems, as well as the circuits and systems for biomedical applications. Prof. Ker had served as member of the Technical Program Committee and the Session Chair of numerous international conferences for many years, including IEEE Symp. on VLSI Circuits, IEEE International Solid-State Circuits Conference (ISSCC), IEEE International Symp. on Circuits and Systems (ISCAS), and IEEE International Reliability Physic Symp. (IRPS). He ever served as the Distinguished Lecturer in the IEEE Circuits and Systems Society (2006–2007) and in the IEEE Electron Devices Society (2008–2020). He ever served as Associate Editor of IEEE Transactions on VLSI Systems, Associate Editor of IEEE Transactions on Biomedical Circuits and Systems (TBioCAS), and the Guest Editor of ISCAS2019 Special Issue in TBioCAS. He was the Founding President of Taiwan ESD Association, and the 3rd President of Taiwan Engineering Medicine Biology Association. He ever served as the Vice-President of IEEE Taipei Section. Currently, he is serving as the Editor of IEEE Trans. on Device and Materials Reliability, Editor of IEEE Journal of the Electron Devices Society, and a Guest Editor for Frontiers in Neuroscience on the research topic of microelectronic implants for central and peripheral nervous system. Prof. Ker has been a Fellow of the IEEE, since 2008.

Sriram Krishnamoorthy received the bachelor’s degree in electrical engineering and physics from the Birla Institute of Technology and Science, Pilani, India, in 2009, and the Ph.D. degree from the Electrical and Computer Engineering Department, The Ohio State University, Columbus, OH, USA, in 2014. Sriram Krishnamoorthy is currently a Mehrabian Career Development Chair Assistant professor in the Materials Department at University of California, Santa Barbara, where his group works at the intersection of materials, electrical engineering, and physics to study and engineer next generation (ultra)wide band gap semiconductors such as Gallium Oxide. His research interests are in the areas of epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics. He has authored or co-authored more than 80 journal articles and more than 150 conference presentations/ proceedings on several topics covering Gallium Nitride interband tunnel junctions for efficient hole injection in III-nitride optoelectronic devices, molecular beam epitaxy growth of III-nitrides, Gallium (Aluminum) Oxide thin films and heterostructures, metalorganic vapor phase epitaxy of UWBG Gallium (Aluminum) Oxide thin films and heterostructures, and high performance lateral and vertical power diodes and transistors based on Gallium Oxide.

Pei-Wen Li (Senior Member, IEEE) received her Ph.D. degree in electrical engineering from Columbia University in New York City in 1994.

Since 2015, she is a Professor in the Institute of Electronics at National Chiao Tung University (NCTU) (as National Yang Ming Chiao Tung University (NYCU) in 2021). Prior to joining NCTU in 2015, she was a Distinguished Professor, Chair of Electrical Engineering Department, and Director of Nano Science and Technology at National Central University. She was a Research Visiting Scholar at Caltech in 2011-2012. She worked with Vanguard International Semiconductor Corporation on DRAM technology integration in 1995-1996. Her research themes focus on experimental germanium nanostructures and devices, encompassing quantum-dot single-electron transistors, photodetectors, light emitters, and thermoelectric devices, making use of self-assembly nanostructures in silicon integration technology. She has published more than 300 technical journal and conference papers and holds 8 patents.

Dr. Li is an IEEE Distinguished Lecturer and has served on the VLSI Technology and Education committees of IEEE Electron Devices Society. She has been an editorial board member of Applied Physics A, Springer since 2020. She is a senior member of the IEEE Electron Device Society and serves on various IEEE conference committees (Silicon Nanoelectronics Workshop (SNW) and Electron Devices Technology and Manufacturing (EDTM) Conference).

Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.

 

Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics

Paolo Pavan graduated in Electronics Engineering at the University of Padova in 1990. From Aug. 1992 to May 1993 he was a “graduate student” at the University of California at Berkeley (USA); then, until May 1994, as “visiting research engineer”. He received his PhD from the University of Padova in 1994. He has been at the Univeristy of Modena and Reggio Emilia since 1994, first as Research Associate, then as Associate Professor in 1998 and Full Professor in 2004. At the University of Modena and Reggio Emilia he has been active in many fields: Dean of the Electronic Engineering Program from 2008 to 2016; Member of the Academic Senate from Nov. 2010 to July 2012 and actively contributed to many working groups and committees; from 2004 to Oct. 2008 he has been Deputy-Dean of the Facoltà di Ingegneria di Reggio Emilia, and the advisor for the Mechatronic Engineering Program. From 2005 to 2011 he has been the President of IU.NET, Consorzio Interuniversitario per la Nanoelettronica (Italian University Nano-Electronics Team), including research groups from Università di Bologna, Padova, Pisa, Ferrara, Udine, Calabria, “Sapienza” in Roma, Politecnico di Milano at that time. Since March 2012 he is Senior Member of the IEEE. In 1997-1999 he visited Saifun Semiconductors (Israel) for research activity on NROM, one of the first innovative charge trapping nonvolatile memories. His research interests are in the characterization, modeling and reliability of nonvolatile memories (Flash, Charge Trapping, PCM, resistive…) and innovative devices (III-V-MOS, FinFET). New characterization tecniques have been developed and coupled to physical modeling to achieve a deep unterstanding of device operations. He is also active in the industrial electronic applications field, namely “by-wire” and wireless embedded systems, energy harvesting devices and circuits. More than 90 papers on journals and conferences (many invited). One book and two book chapters. He has been Chairman of the Technical Committee “Nonvolatile and Programmable Device Reliability” in ESREF2002. In 2002 and 2003 he has been member of the Technical Sub-Committee “CMOS and Interconnect Reliability” of IEDM (IEEE International Electron Device Meeting) and he became Chairman in 2004; European Arrangement Chair of IEDM in 2005 and 2006. He has been Editor of a Special Issue on Nonvolatile Memories, IEEE Transactions on Device and Material Reliability, Sept. 2004. From 2006 to 2010 he has been member of the Technical Committee of the International Symposium on VLSI, Technology, Systems and Applications (VLSI-TSA) in Taiwan. From 2012 he is member of the Technical Committees of ESREF and ESSDERC. He is a member of the Technical Committee of IRPS (2014 and 2015). He has been the Technical Program Chair of ESSDERC 2014. He is the Guest Editor of the Special Issue of Solid State Electronics dedicated to ESSDERC 2014. He is currently a member of the Steering Committee of ESSDERC. He teaches Electronics at the Engineering Departments and more specific lectures for summer schools and masters (e.g. Short Course on “Alternative Nonvolatile Memories” International Symposium on VLSI, Technology, Systems and Applications (VLSI-TSA) in Taiwan, 2006; 3rd European “Sinano” Summer School in 2008; Master in Nanotechnologies - CIVEN (Coordinamento Interuniversitario Veneto per le Nanotecnologie) in 2009. He co-founded two spin-offs: embit s.r.l. in July 2004, and xbw s.r.l. in June 2006. Both companies work on industrial electronics applications for logistics and mechatronics applications. He is an active Reviewer for many International Journals (IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Device and Materials Reliability, Solid State Electronics, ... ) Lecture Topics: Nonvolatile Memories, characterization and modeling of innovative devices

MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore.  As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres. 

 

Lecture Topics: 

- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.

- Interface Physics and Analysis Challenges in Silicon Nanodevices

- Are the Progressions towards the “Benefit of Humanity”? -  A Failure Analyst’s View

 

Munaf T. A Rahimo (Senior Member, IEEE) received his B.Sc. in Electrical Engineering in 1990 from Baghdad University, Iraq. He then studied at Staffordshire University, UK, where he completed his M.Sc. in Electrical and Electronic Engineering with distinction in 1993 and his Ph.D. in 1996 with the thesis entitled "Switching Characteristics of Fast Power Diodes in IGBT Circuits".

In 1996, he joined GEC Plessey Semiconductors, UK developing fast diodes for IGBT and GTO applications. He joined Semelab in 1999 as a Senior Engineer developing discrete fast diodes and was involved in the early development of Silicon Carbide Schottky diodes. In 2000, he joined ABB Semiconductors, Switzerland as a Senior Research and Development Engineer. At ABB, he was involved in the development of a wide range of power devices such as IGBTs, Diodes, IGCTs, Thyrsitors, Silicon Carbide Devices and Power Modules. He pioneered many device concepts including for example the High-Voltage Planar and Enhanced-Planar IGBT, the Bimode IGBT (BIGT) and the HighPower-Technology IGCT. Due to his many contributions, he scaled ABB`s technical career path to become Chief Engineer in 2005 and Senior Principal Engineer in 2009. He was then awarded the prestigious Corporate Executive Engineer title in 2012 due to his key device innovations and contributions to HVDC systems. In 2018, he started his consulting business MTAL GmbH and founded a power device start-up mqSemi AG where he currently acts as general manager for both companies in Switzerland.

He has over 150 peer-reviewed publications and more than 100 patent applications with more than 50 granted U.S. patents.  He is a member of the IEEE societies EDS, PELS and IAS.

Charles Surya received his PhD in Electrical Engineering from the University of Rochester in 1987. From 1987 to 1994 he was associated with the Electrical and Computer Engineering Department of Northeastern University. He joined the Electronic and Information Engineering (EIE) Department in 1994 and remained there since. Professor Surya’s research interests are: optoelectronic materials and devices including MOCVD growth of GaN thin films and the study of GaN-based LEDs and UV detectors; growth of organic-inorganic hybrid perovskite materials and the fabrication of advanced perovskite based photovoltaic cells; and low-frequency noise in electron devices. Presently, Professor Surya is spearheading a collaborative effort between The Hong Kong Polytechnic University and the City of Dongguan, China for the establishment of an R&D Center on the study of photovoltaic materials, devices and systems. He became a full professor of the Department in 2002andsince 2013hewas appointed Clarea Au Endowed Professor in Energy. Professor Surya had served in various administrative posts including Associate Head of the EIE Department (2002-2005), Associate Dean of the Faculty of Engineering (2007 – 2010) and the Acting Dean of the Faculty of Engineering (2010 – 2012) of The Hong Kong Polytechnic University. While serving as the Associate Dean and Acting Dean of the Faculty he was responsible for the implementation of outcome-based approach in the Engineering Faculty. From 2007 – 2013 Professor Surya was the The Hong Kong Polytechnic University representative to the Hong Kong University Grants Council Panel for Outcome-based Education to oversee the implementation of Outcome-based Approach among the Engineering Faculties in Hong Kong. He had been active in EDS and had served in various capacities including conference co-chair and chapter chair in the past. He is presently serving as the Chairman of the Optoelectronic Devices Technical Committee.

Dr. Zhenxing Wang, head of the Graphene Electronics Group at AMO GmbH, holds a PhD from Peking University on radio-frequency electronics based on graphene and carbon nanotubes, and did postdoctoral research at the University of Erlangen-Nuremberg, where he worked on solution based 2D materials. From 2014 he has been with AMO, where he is responsible for development of graphene based electronics, especially for high frequency applications, as well as on the wafer scale integration of graphene material. He is principle investigator in different German national projects on graphene and 2-dimensional materials based devices, and he has been managing different EU-projects from AMO side.

Carl-Mikael Zetterling (S’91–M’97–SM’01) received the M.Sc.E.E. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, in 1991 and 1997, respectively. In 1997, he joined the Faculty of the School of Electrical Engineering, KTH. He is a Professor of Solid State Electronics since 2005, and since 2013 also Vice Dean of the School of Information and Communication Technology. From 1995 to 1996, he was an Invited Scholar at the Center for Integrated Systems, Stanford University, Stanford, CA. In 1998, he spent three months as an Invited Professor at Kyoto University, Japan, and again in 2001 for two months at Kyoto Institute of Technology, Japan. His field of research is process technology and device design of high voltage power devices and high temperature radiation hard analog and digital integrated circuits in SiC. He has coauthored around 260 internationally published articles and conference contributions, including editing one book about process technology for silicon carbide devices, and co-writing one book about plagiarism prevention with Jude Carroll. Prof. Zetterling has served in the Technical Program Committee for the TMS Electronic Materials Conference and the IEEE SISC Conference.

Prof. Zhen Zhang is currently a professor of Solid-State Electronics at Department of Engineering Sciences, the Angstrom laboratory, Uppsala University, Sweden (assistant professors with tenure track 201308-201705; associate professor 201706-201803; full professor 201804-present). Before joining Uppsala University in Aug. 2013, he was a postdoctoral research fellow (2008-2010) and a Research Staff Member at IBM T. J. Watson Research Center (2010-2013), Yorktown Heights, NY, USA. Prof. Zhang received his Ph.D degree from the Royal Institute of Technology (KTH), Sweden in 2008. He got the M.Sc degree at Shanghai Institute of Ceramics, Chinese Academy of Sciences in 2003 and the B.Sc. degree at University of Science and Technology of China (USTC) in 2000. Prof. Zhang was a recipient of the Ingvar Clarsson Award from Swedish Strategic Research Foundation in 2013. He also received a Göran Gustafssons Prize for young researchers and Swedish Research Council (VR) young researcher grant in 2014. He was appointed Wallenberg Academy Fellow (by Knut and Alice Wallenberg Foundation together with the Royal Swedish Academy of Sciences and the Royal Swedish Academy of Engineering Sciences) in 2015 and SSF Future Research Leader (by Swedish Strategic Research Foundation) in 2016.

His current research interest includes advanced nanofabrication technologies, semiconductor nanoelectronics and nanosensors, metal-semiconductor junctions and device-bio interfaces.

 

Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.

 

Lecture Titles

-Thin-fi lm transistor for Flexible Heterogeneous Integration

-Organic thin-fi lm Transistor for Display and Sensor Integration

-Low power Flexible Hybrid Integration for IoT

-Active-Matrix Backplane Design and Integration for Advanced Displays

Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.

 

Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics