Editor-in-Chief and Editors

Subhananda Chakrabartir received his M.Sc. and Ph.D. degrees from the Department of Electronic Science, University of Calcutta, Kolkata, India in 1991 and 2000, respectively. He was a Lecturer in the Dept. of Physics, St. Xavier’s College, Kolkata. He has been a Senior Research Fellow with the University of Michigan, Ann Arbor, from2001 to 2005, a Senior Researcher with Dublin City University, Dublin City, Ireland, from 2005 to 2006, and a Senior Researcher (RA2) with the University of Glasgow, Glasgow, U.K., from 2006 to 2007. He joined as an Assistant Professor in the Department of Electrical Engineering, IIT Bombay, Mumbai, India, in 2007.Presently, he is a Professor in the same department. He has extensively researched in molecular beam epitaxial(MBE) growth, characterization, and fabrication of compound (III-V) GaAs-based semiconductor optoelectronic materials and devices, such as intersubband infrared photodetectors etc. He has been the first to demonstrate complete indigenous development Infrared Photodetector based Focal Plane Array in India. In II-VI (ZnO) based research, he has demonstrated stable p-doping through Plasma Immersion Ion Implantation (PIII) technique and subsequently demonstrated a homojunction ZnO-based UV-LED. He is a fellow of the Institution of Electrical and Telecommunication Engineers (IETE) India, Member of the IEEE, MRS USA, SPIE USA etc. He is the medal recipient of the Materials Research Society of India. Recently, he was awarded NASI-Reliance Industries Platinum Jubilee Award for Application Oriented Innovations in Physical Sciences for the year 2016. He has authored more than 200 papers in international journals and conferences. He has also co-authored a couple of book chapters on intersubband quantum dot detectors. His four (4) research monographs with Springer are in press. Dr. S. Chakrabarti has served as reviewer for a number of international journals of repute such as Applied Physics Letters, Nature Scientific Report, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Journal of Alloys and Compound, Material Research Bulletin etc.

Lecture Topics: 1) Nanowire electronics: the future of CMOS technology 2) Green Transistors for energy efficient integrated circuits 3) Can Bipolar Transistors be made without doping? 4) Tunnel field effect transistors: Design and Optimization 5) Trench power MOSFETs: Design and Optimization 6) Perspectives on the evolution of semiconductor manufacturing: Enabling the impossible

Dr. Kumar is currently the NXP (Philips) Chair Professor established at IIT Delhi by Philips Semiconductors, Netherlands (now NXP Semiconductors India Pvt Ltd). He was the Co-ordinator of VLSI Design, Tools and Technology interdisciplinary program. He is a Chief Investigator of the Nano-scale Research Facility (NRF) at IIT Delhi. Dr. Kumar received the 2013 Award for Excellence in Teaching (in large class category) from IIT Delhi. He works in the area of Nanoelectronic Devices, Device modeling and simulation, IC Technology and Power semiconductor devices. He has published extensively in the above areas with four book chapters and more than 160 publications in refereed journals and conferences. He is on the Editorial Board of Scientific Reviews, an online and open access primary research publication from the publishers of Nature. He is an Editor of IEEE Transactions on Electron Devices and the Editor-in-Chief of IETE Technical Review. Dr. Kumar is a Fellow of Indian National Academy of Engineering, The National Academy of Sciences, India, and The Institution of Electronics and Telecommunication Engineers, India. He has been awarded the 29th IETE Ram Lal Wadhwa Gold Medal for distinguished contribution in the field of Semiconductor device design and modeling. He has received the first ever ISA-VSI TechnoMentor Award given by the India Semiconductor Association to recognize a distinguished Indian academician and researcher for playing a significant role as a mentor and researcher. He is a recipient of 2008 IBM Faculty award in recognition of professional achievements. He has delivered a number of invited lectures in conferences and workshops in India and abroad to large audiences on topics related to Nanoelectronics. For more details on Dr. Kumar, you can visit http://web.iitd.ac.in/~mamidala

Susanna Reggiani is Associate Professor at the Faculty of Engineering of the University of Bologna, Italy. She received the Ph.D. degree in Electrical Engineering from the University of Bologna in 2001. Since 2001 she is with the Department of Electronics and with Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Her scientific activity has been devoted to the physics, modeling and characterization of electron devices, with special emphasis on transport models in semiconductors. Since 2007 she has been involved in Projects dealing with the TCAD analysis of power MOSFETs, modeling and characterization of hotcarrier stress degradation, modeling of package influences on high-voltage semiconductor FETs, TCAD study of the reliability of GaN-on-Si HEMTS. She is currently involved in European Projects on the development of physically-based models for SiC-based power devices and Smart Power integrated devices.

Jing Wang obtained his Bachelor’s degree (with the highest honor) in Electronic Engineering from Tsinghua University, China in 2001 and his Ph.D. degree in Electrical and Computer Engineering from Purdue University in 2005. His Ph.D. research, supervised by Prof. Mark Lundstrom, was focused on device physics and simulation of silicon nanowire transistors, exploration of nanoscale MOSFETs, and simulation of high electron mobility transistors.

Dr. Wang is currently Director of Device Research at Samsung Semiconductor Inc., San Jose, CA, USA, and his research interests cover compact modeling of advanced logic and memory devices, TCAD simulation and device design, circuit performance benchmark and DTCO, the application of machine learning algorithms in semiconductor R&D and EDA, and neuromorphic computing, etc. From 2005 to 2012, Dr. Wang had worked at the IBM Semiconductor Research and Development Center, Hopewell Junction, NY, as a technical lead of the compact modeling team developing 45/32/28/20nm CMOS technology for the Fishkill ISDA alliance. In 2011, he represented the IBM technology enablement organization in the Common Platform Technology Forum as an invited speaker and panelist. From 2012 to 2014, Dr. Wang was with SuVolta Inc., a semiconductor start-up company, where he had served as Director of the TCAD and compact modeling group developing SuVolta’s proprietary, low-power CMOS technology.

Dr. Wang has over 40 peer reviewed publications with more than 2,500 citations and 25 granted US patents. He has served on the Industrial Advisory Board (IAB) for multiple university research programs and is the recipient of several innovation awards. Dr. Wang is a Senior Member of the IEEE and the IEEE Electron Devices Society.