Lastest Issue: Table of Contents (TOC)
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- Editorial Exciting Progress
- Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing
- Effects of Interface States on Ge-On-SOI Photodiodes
- A Hybrid Phototransistor Neuromorphic Synapse
- SPICE Modeling of Insulator Metal Transition: Model of the Critical Temperature
- Electrical Stability of Solution-Processed a-IGZO TFTs Exposed to High-Humidity Ambient for Long Periods
- The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
- Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus
- Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
- Homo-Junction Bottom-Gate Amorphous InGaZnO TFTs With Metal-Induced Source/Drain Regions
- Dynamic Switching Characteristics of 1 A Forward Current
$boldsymbol{beta}$ - A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
- Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
- Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
- High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
- A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
- Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions
- A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs
- Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors
- Extraction of Contact Resistance and DC Modeling in Metal Oxide TFTs
- Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process
- A Study on Selectivity and Temperature Coefficients of the Chloride Ion Sensors With RuOx Thin Film
- Investigation of Retention Noise for 3-D TLC NAND Flash Memory
- A Reliable Technology for Advanced SiC-MOS Devices Based on Fabrication of High Quality Silicon Oxide Layers by Converting a-Si
- Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
- Symmetrical and Crossed Double-Sided Passivation Emitter and Surface Field Solar Cells for Bifacial Applications
- Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection
- External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
- Au Nanoparticles-Decorated Surface Plasmon Enhanced ZnO Nanorods Ultraviolet Photodetector on Flexible Transparent Mica Substrate
- Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors
- TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
- Accurate Graphene-Metal Junction Characterization
- Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation
- Silicon Photomultipliers With Area Up to 9 mm2 in a 0.35-
$mu$ - Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon
- A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction
- Ferroelectric Field Effect Transistors Based on PZT and IGZO
- Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact
- Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
- Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes
- Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs
- Rapidly Measuring Charge Carrier Mobility of Organic Semiconductor Films Upon a Point-Contact Four-Probes Method
- IGZO TFT Gate Driver Circuit With Improved Output Pulse
- Automatic Fault Detection Circuit for Integrated Gate Drivers of Active-Matrix Displays
- Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
- Oxide TFT Rectifiers on Flexible Substrates Operating at NFC Frequency Range
- Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device
- Monitoring of FinFET Characteristics Using
$Delta V_{text{DIBLSS}}/(I_{text{on}}/I_{text{off}})$ $Delta V_{text{DIBL}}/(I_{text{on}}/I_{text{off}})$ - Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques
- Assessment and Optimization of the Circadian Performance of Smartphone-Based Virtual Reality Displays
- On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region
- ZnON MIS Thin-Film Diodes
- The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS
- A Low-Power Thin-Film Si Heterojunction FET Noise Amplifier for Generation of True Random Numbers
- Ultra Low-Loss Si Substrate for On-Chip UWB GHz Antennas
- A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications
- Investigation of
$I-V$ - Compact Charge Modeling of Double-Gate MOSFETs Considering the Density-Gradient Equation
- Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
- Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications
- Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs
- Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
- Operation Up to 500 C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
- Impacts of HfO2/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors
- A Compensation Method for Variations in Subthreshold Slope and Threshold Voltage of Thin-Film Transistors for AMOLED Displays
- Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling
- On the Ammonia Sensing Performance and Transmission Approach of a Platinum/Nickel Oxide/GaN-Based Metal-Oxide-Semiconductor Diode
- Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate
- Employing Drain-Bias Dependent Electrical Characteristics of Poly-Si TFTs to Improve Gray Level Control in Low Power AMOLED Displays
- A
${c}$ - Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors
- Effect of Al2O3 Passivation on Electrical Properties of
$beta$ - Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions
- Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes
- Skyrmion-Induced Memristive Magnetic Tunnel Junction for Ternary Neural Network
- Understanding the
$C-V$ - Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
- 2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
- Enhancement of the Luminance Uniformity in Large-Size Organic Light-Emitting Devices Based on InGaZnO Thin-Film Transistors by Using a New Compensation Method
- High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
- A Fully Printed Ultra-Thin Charge Amplifier for On-Skin Biosignal Measurements
- Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
- Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
- Impact of the Stacking Order of HfO
x and AlOx Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics - High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
- A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
- TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation
- First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
- Tunnel Field-Effect Transistor With Segmented Channel
- Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory
- High-Performance Amorphous ZincTinOxide Thin-Film Transistors With Low Tin Concentration
- Test System for Thin Film Transistor Parameter Extraction in Active Matrix Backplanes
- Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs
- Incorporating Resistance Into the Transition From Field Emission to Space Charge Limited Emission With Collisions
- A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
- Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
- Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors
- Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid
$p^{{+}}/{n}$ - A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
- Precise Extraction of Dynamic
R dson Under High Frequency and High Voltage by a Double-Diode-Isolation Method - Top-Bottom Gate Coupling Effect on Low Frequency Noise in a Schottky Junction Gated Silicon Nanowire Field-Effect Transistor
- Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element
- A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
- Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
- Ultra-Low Level Light Detection Based on the Poisson Statistics Algorithm and a Double Time Windows Technique With Silicon Photomultiplier
- Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path
- Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters
- Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention
- 0.7-
$mu$ ${f}_{{T}}$ ${f}_{text{MAX}}$ - Foreword Special Section on Flexible Electronics From the Selected Extended Papers Presented at 2018 IFETC
- Printing Contractive Silver Conductive Inks Using Interface Interactions to Overcome Dewetting
- Adopting Hybrid Integrated Flexible Electronics in Products: CasePersonal Activity Meter
- Flexible Green Perovskite Light Emitting Diodes
- Hybrid Systems-in-FoilCombining the Merits of Thin Chips and of Large-Area Electronics
- Controlling the Surface Properties of an Inkjet-Printed Reactive Oxygen Species Scavenger for Flexible Bioelectronics Applications in Neural Resilience
- A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays
- Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
- Introduction to the Special Section on the 2018 IEEE S3S Conference
- 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K
- Process Dependence of Soft Errors Induced by Alpha Particles, Heavy Ions, and High Energy Neutrons on Flip Flops in FDSOI
- The Study of Plasma Induced Damage on 65-nm Silicon on Thin BOX Transistor
- Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes
- A 4Kx8 Innovative Fuse OTP on 22-nm FD-SOI
- Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection
- On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET
- Advanced FD-SOI and Beyond Low Temperature SmartCut Enables High Density 3-D SoC Applications
- Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
- Ultimate Monolithic-3D Integration With 2D Materials: Rationale, Prospects, and Challenges
- Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket
- Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP
- A Method for Obtaining the Real Off-State Breakdown Voltage of AlGaN/GaN MIS-HEMTs in On-Wafer Tests by Optimizing Protective Layer
- Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack
- High Performance
${beta}$
