Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of J-EDS. Click an article title to view within IEEE Xplore.
View / Subscribe to the J-EDS RSS Feed
- Table of Contents
- IEEE ELECTRON DEVICES SOCIETY
- Editorial
- A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction
- Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application
- Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
- Scaling Design Effects on Surface Buffer IGBT Characteristics
- 1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
- Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors
- Mechanism of Non-Ideal Transfer Characteristic at Low Drain Voltage in Metal-Capped Amorphous Oxide Thin Film Transistor
- Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier
- A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology
- Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si
- Mitigating DIBL and Short-Channel Effects for III-V FinFETs With Negative-Capacitance Effects
- Ultrathin MoS-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO and Body-Potential Control
- Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET
- A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique
- Wide Bandgap Vertical kV-Class
-GaO/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination - A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
- Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization
- Impacts of Pulsing Schemes on the Endurance of Ferroelectric MetalFerroelectricInsulatorSemiconductor Capacitors
- Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model
- Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress
- SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
- DFT Investigation on Targeted Gas Molecules Based on Zigzag GaN Nanoribbons for Nano Sensors
- Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT
- Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-
m GaAs Technology - Fabrication and Characterization of 2-Bit per Capacitor as Functional Structures for Physical Unclonable Function Circuits
- A Novel Multi-Scale Method for Thermo-Mechanical Simulation of Power Integrated Circuits
- A Low-Power CMOS Image Sensor With Multiple-Column-Parallel Readout Structure
- Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability
- Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case
- Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer
- High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials
- Modular Integration of a Compact Ku-Band Relativistic Triaxial Klystron Amplifier Packaged With Permanent Magnets for High-Power Microwave Generation
- GaN-Based GAA Vertical CMOS Inverter
- Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors
- Piston-Mode pMUT With Mass Load
- Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters
- AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism
- Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO2/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform
- Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density
- Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window
- Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices
- Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics
- Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate
- Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs
- The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination
- Hybrid Junction Termination Consisting of a Variation Lateral Doping Structure and a Spiral Polysilicon Resistive Field Plate
- AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer
- Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
- Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet
- Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors
- Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers
- Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays
- Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience
- LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
- Bidirectional Selector Realized Through Multilayer Tunnel Barrier Engineering
- A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET
- Improved Electrical Performance of InO Thin-Film Transistor by UV/Ozone Treatment
- Physics-Based Analytical Channel Charge Model of In
x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes - Area and Thickness Scaling of NbO-Based Threshold Switches for Oscillation Neurons
- High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film
- Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO
- Foreword Special Issue on the 3rd Latin American Electron Device Conference
- Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
- Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits
- Solution-Processed Small Molecule Inverted Solar Cells: Impact of Electron Transport Layers
- Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons
- TCAD Evaluation of the Active Substrate Bias Effect on the Charge Transport of -Gate Nanowire MOS Transistors With Ultra-Thin BOX
- Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators
- Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling
- Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs
- Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells
- Real-Time Switching Dynamics in STT-MRAM
- Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation
- Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection
- Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET
- Schottky-Embedded Isolation Ring to Improve Latch-Up Immunity Between HV and LV Circuits in a 0.18 m BCD Technology
- Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack
- Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design
- Dynamic Characteristics of GaN MISHEMT With 5-nm
In-Situ SiNx Dielectric Layer - Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
- Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
- Special Section on ESSDERC 2021
- BEOL Process Effects on ePCM Reliability
- Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications
- Optimum Functionalization of Si Nanowire FET for Electrical Detection of DNA Hybridization
- Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
- Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions
- Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices
- Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain
- High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications
- A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel
- READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications
- O2 and H2O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors
- Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications
- Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer
- Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device
- Temperature Effect Analysis of the Enzymatic RuO2 Biomedical Sensor for Ascorbic Acid Detection
- A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
- Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors
- Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT
- A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing
- Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
- Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
- Development of NiP Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform
- Flash Memory and Its Manufacturing Technology for Sustainable World
- Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/
n -Ge(001) Contacts - Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted -Ga2O3
- Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)
- Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements
- Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage
- Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling
- Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems
- Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost
- An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources
- High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
- NOR-Type 3-D Synapse Array Architecture Based on Charge-Trap Flash Memory
- Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging
- Explore Luminance Attenuation and Optical Crosstalk of RGB Mini Light-Emitting Diode via Microscopic Hyperspectral Imaging
- MPT Tool: A Parameter Extraction Tool for Accurate Modeling of Magnetic Tunnel Junction Devices
- Direct-Triggering LTT With Monolithic Structure
- The Gold Nanoparticles Enhanced ZnO/GaN UV Detector
- The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs
- Guest Editorial Special Section on EDTM 2022
- A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding
- Application of e-Beam Voltage Contrast Technique for Overlay Improvement and Process Window Control in Multi-Patterning Interconnect Scheme
- Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process
- A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor
- Temperature Driven CurrentVoltage Characteristics of Ionic Liquid Type Intelligent Connection Device
- Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation
- BEOL Integrated Ferroelectric HfO-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
- Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs
- Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias
- Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric<sub/><sub/><sub/>
- -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DCDC Converter
- Low Interface Trapped Charge Density for AlO/-GaO (001) Metal-Insulator-Semiconductor Capacitor
- Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
- Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs
- Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges
- GrapheneSilicon Diode for 2-D Heterostructure Electrical Failure Protection
- Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp
- The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
- The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs
- Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2
- Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques
- Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing
- Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs
- Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics<sub/><italic/>
- Golden List of Reviewers for 2022
- Materials, processing and integration for neuromorphic devices and in-memory computing
- Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
- From Mega to nano: Beyond one Century of Vacuum Electronics
- Dielectrics for 2D electronics
- Semiconductor Device Modeling for Circuit and System Design
- 2022 Index IEEE Journal of the Electron Devices Society Vol. 10
- INFORMATION FOR AUTHORS
