Lastest Issue: Table of Contents (TOC)
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- IEEE ELECTRON DEVICES SOCIETY
- Editorial
- Golden List of Reviewers for 2023
- Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
- Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures
- New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs
- A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band
- Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
- RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera
- Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes
- Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors
- InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications
- Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
- Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors
- Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application
- 24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiNx Layer
- 3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM
- A Flexible Printed Circuit Board-Based ZnO Enzymatic Uric Acid Potentiometric Biosensor Measurement and Characterization
- Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons
- Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit
- Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes
- Overview on Latch-Up Prevention in CMOS Integrated Circuits by Circuit Solutions
- Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors
- Bit Depth of Drivers for Micro-LED Displays Adopting Low-Temperature Polysilicon Oxide Thin-Film Transistors
- High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates
- Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic
- Development and Challenges of Reliability Modeling From Transistors to Circuits
- Ultrafast ID – VG Technique for Reliable Cryogenic Device Characterization
- Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off
- A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays
- Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
- Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs
- Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
- Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors
- Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates
- Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs With In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate
- High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs
- Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared With a Solution-Based Process
- Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger
- Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors
- Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability
- Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
- Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology
- Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications
- Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET
- Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs
- Design and Fabrication of PDMS Microfluidic Device Combined With Urea Biosensor for Dynamic and Static Measurements
- Scalable Small Signal and Noise Modeling of InP HEMT for THz Application
- Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs
- I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures
- Photon Counting Histogram Expectation Maximization Algorithm for Characterization of Deep Sub-Electron Read Noise Sensors
- Experimental Verification of PCH-EM Algorithm for Characterizing DSERN Image Sensors
- Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors
- Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization
- Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide
- Active-Matrix Digital Microfluidics Design and Optimization for High-Throughput Droplets Manipulation
- A High-Voltage Serial-In-Parallel-Out Shift Register With Amorphous Silicon TFTs
- High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate
- The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress
- Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
- Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
- A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs
- A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral
- Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
- A Low-Cost Passivation for Low Temperature Cu-Cu Bonding Using PVD-Deposited Cu3N
- 3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET
- Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction
- Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing
- Simulation of In-Situ Training in Spike Neural Network Based on Non-Ideal Memristors
- A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter
- Semiconductor Device Modeling for Circuit and System Design
- Role of Solar Cells in Global Energy Transformation
