Lastest Issue: Table of Contents (TOC)
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- A Temperature Compensation Method by Adjusting Gamma Voltages for High Luminance Uniformity of Active Matrix Organic Light-Emitting Diode Displays
- Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC MetalOxideSemiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel
- High-
${k}$ - Analysis and Modeling of Lateral Power Devices With Stepped Drift Region Thickness via Effective Concentration Profile Concept
- Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
- Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs
- Superjunction Power Transistors With Interface Charges: A Case Study for GaN
- An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method
- An Improved iMemComp OR Gate and its Applications in Logic Circuits
- Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory
- Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode Oxide TFTs
- Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
- An Enhanced Floating Gate Memory for the Online Training of Analog Neural Networks
- Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents
- First Evidence of Temporary Read Errors in TLC 3D-NAND Flash Memories Exiting From an Idle State
- Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance
- Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
- A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 C
- High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers
- 1/
${f}^{gamma}$ - Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation
- Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory
- Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress
- Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit
- Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs For Flexible X-Ray Detector
- Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
- Erratum to Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents [Jan 20 92-98]
- A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
- An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC
- NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity
- A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors
- Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current
- Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects
- Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
- 1.6-kV 1.5-kA GaAs Avalanche Semiconductor Switch Triggered by 4 J Laser Diode
- Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
- Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays
- Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
- Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution
- Effective Concentration Profile: A Novel 1-D Analysis of the Variation of Lateral Thickness (VLT) Lateral Power Devices
- Characterization and Modeling of Mismatch in Cryo-CMOS
- A Compact Model of MoS2 Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes
- Current Pulses to Control the Conductance in RRAM Devices
- Schottky Barrier Height Engineering in
-Ga2O3 Using SiO2 Interlayer Dielectric - A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond
- Low-Leakage Capacitive Coupling Structure for a-Si:H Gate Driver With Less Delay of Clock Signals Used in AMLCDs
- Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs
- 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse
p-n Junction Termination - Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation
- Decreased Motion Blur in Large-Size, Organic, Light-Emitting Device Panels Due to Integrated Gate Driver Circuits With a Moving-Picture Response-Time-Reduction Method
- Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
- Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current
- Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/AlO Gate Stack
- An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
- Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices
- Investigation of SiN
x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges - Energy-Delay Sensitivity Analysis of a Nanoelectromechanical Relay With the Negative Capacitance of a Ferroelectric Capacitor
- Foreword
- Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices
- DC and 28 GHz Reliability of a SOI FET Technology
- Origin of the Negative Differential Resistance in the Output Characteristics of a Picene-Based Thin-Film Transistor
- Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs
- Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs
- Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study
- Effects of Annealing Temperature on the Performance of Organic Solar Cells Based on Polymer: Non-Fullerene Using V2O5 as HTL
- Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing
- Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors
- Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
- Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures
- The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties
- Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read
- Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
- High
fmax LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate - Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
- Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations
- 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
- Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects
- Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island
- RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile
- Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
- IEEE Transactions in Technology and Society
