Lastest Issue: Table of Contents (TOC)
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- Editorial
- Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an IndiumTinOxide Gate Electrode
- Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device
- High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 C
- Pixel Parameters Optimization in PWM Image Sensor for Quantization Error Suppression
- Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature WriteRead Operations in 3-D NAND Flash
- Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors
- Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs
- High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
- Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer
- Interfacial Dipole Modulation Device With SiOX Switching Species
- Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell
- High-Performance GaN Vertical
p-i-n Diodes via Silicon Nitride Shadowed Selective-Area Growth and Optimized FGR- and JTE-Based Edge Termination - Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
- Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
- Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
- Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory
- Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well
- Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study
- First RF Power Operation of AlN/GaN/AlN HEMTs With 3 A/mm and 3 W/mm at 10 GHz
- 1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
- AlInGaN/GaN HEMTs With High Johnsons Figure-of-Merit on Low Resistivity Silicon Substrate
- Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO2
- An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors
- Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods
- 1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz
- Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
- Correlation Image Sensor for Algebraic Solution of Optical Flow
- Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device
- Optimization of Photoelectron
In-Situ Sensing Device in FD-SOI - Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches
- Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs
- On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
- Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
- Ultrathin Sub-5-nm Hf
Zr O for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate - Improving the Drift Effect and Hysteresis Effect of Urea Biosensor Based on Graphene Oxide/Nickel Oxide Sensing Film Modified Either by Au Nanoparticles or
-FeO Nanoparticles Using Back-End Calibration Circuit - Electron Conduction Channel of Silver Nanowire Modified TiO Photoanode for Improvement of Interface Impedance of Dye-Sensitized Solar Cell
- Fast Progressive Compensation Method for Externally Compensated AMOLED Displays
- Pd Nanoparticle Adsorption ZnO Nanorods for Enhancing Photodetector UV-Sensing Performance
- Planarized Trench Isolation of In0.52Al0.48As/In0.8Ga0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
- Sheet Resistance Reduction of MoS Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
- Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
- Graded Crystalline HfO Gate Dielectric Layer for High-k/Ge MOS Gate Stack
- A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
- White Light-Emitting Diodes With Visible Uniform Spectral Power Distribution Packaged With Phosphor-in-Silicone/Phosphor-in-Glass Stacked Structure
- A Novel Real-Time TFT Threshold Voltage Compensation Method for AM-OLED Using Double Sampling of Source Node Voltage
- Etched-and-Regrown GaN
pn -Diodes With 1600 V Blocking Voltage - 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data
- A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors
- A Common Drain Operational Amplifier Using Positive Feedback Integrated by Metal-Oxide TFTs
- In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation
- High
Q Lateral-Field-Excited Bulk Resonator Based on Single-Crystal LiTaO for 5G Wireless Communication - Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
- AM PWM Driving Circuit for Mini-LED Backlight in Liquid Crystal Displays
- Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors
- An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
- Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model
- Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and GaO Gate Insulator Layer
- Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
- Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer
- The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures
- Direct Defect-Level Analysis of MetalInsulatorMetal Capacitor Using Internal Photoemission Spectroscopy
- Quality in Simulation-Only Manuscripts Submitted to J-EDS
- Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range
- Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS2 Double-Gate FETs
- Foreword Special Issue on the 2nd Latin American Electron Device Conference
- Noise-Based Simulation Technique for Circuit-Variability Analysis
- Emerging CMOS Compatible Magnetic Memories and Logic
- Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)
- Does the Threshold Voltage Extraction Method Affect Device Variability?
- Microstructure and Granularity Effects in Electromigration
- Photostability Study of Inverted Polymer Solar Cells Under AM 1.5G and LED Illumination via Impedance Spectroscopy
- Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures
- Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications
- Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress
- Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor
- Design and Simulation of Near-Terahertz GaN Photoconductive SwitchesOperation in the Negative Differential Mobility Regime and Pulse Compression
- Capacitor Reused Gate Driver for Compact In-Cell Touch Displays
- A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO/Ge and Si-cap/Ge Gate Stack
- GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution
- Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
- Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse
- Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
- Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs
- Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature
- High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
- Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters
- Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
- Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process
- Graphitic Carbon Nitride (g-CN)/AlO Heterostructure as Double Dielectric: A Comparative Study in MIS Based on a-IGZO
- Highly Sensitive Piezoresistive Sensors Based on a Voltage Divider Circuit With TFTs for Ultra-Low Pressure Detection
- Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress
- Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs
- Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory
- Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems
- Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction
- Memory Operation of Z-FET Without Selector at High Temperature
- Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera
- Determining the Electrical Charging Speed Limit of ReRAM Devices
- Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics
- Investigation on Stability of p-GaN HEMTs With an IndiumTinOxide Gate Under Forward Gate Bias
- Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic
- Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench
- A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode
- A Modified NMOS Inverter With Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTs
- Effect of
In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs - Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions
- Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors
- Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
- Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications
- Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region
- Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories
- Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise
- Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET
- Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model
- MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
- An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs
- Erratum to Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories
- Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La2O3 Gate Dielectric
- Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 m Low-Voltage CMOS Technology
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