Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of J-EDS. Click an article title to view within IEEE Xplore.
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- Editorial
- Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an IndiumTinOxide Gate Electrode
- Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device
- High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 C
- Pixel Parameters Optimization in PWM Image Sensor for Quantization Error Suppression
- Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature WriteRead Operations in 3-D NAND Flash
- Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors
- Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs
- High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
- Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer
- Interfacial Dipole Modulation Device With SiOX Switching Species
- Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell
- High-Performance GaN Vertical
p-i-n Diodes via Silicon Nitride Shadowed Selective-Area Growth and Optimized FGR- and JTE-Based Edge Termination - Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
- Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
- Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
- Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory
- Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well
- Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study
- First RF Power Operation of AlN/GaN/AlN HEMTs With 3 A/mm and 3 W/mm at 10 GHz
- 1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
- AlInGaN/GaN HEMTs With High Johnsons Figure-of-Merit on Low Resistivity Silicon Substrate
- Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO2
- An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors
- Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods
- 1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz
- Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
- Correlation Image Sensor for Algebraic Solution of Optical Flow
- Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device
- Optimization of Photoelectron
In-Situ Sensing Device in FD-SOI - Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches
- Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs
- On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
- Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
- Ultrathin Sub-5-nm Hf
Zr O for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate - Improving the Drift Effect and Hysteresis Effect of Urea Biosensor Based on Graphene Oxide/Nickel Oxide Sensing Film Modified Either by Au Nanoparticles or
-FeO Nanoparticles Using Back-End Calibration Circuit - Electron Conduction Channel of Silver Nanowire Modified TiO Photoanode for Improvement of Interface Impedance of Dye-Sensitized Solar Cell
- Fast Progressive Compensation Method for Externally Compensated AMOLED Displays
- Pd Nanoparticle Adsorption ZnO Nanorods for Enhancing Photodetector UV-Sensing Performance
- Planarized Trench Isolation of In0.52Al0.48As/In0.8Ga0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
- Sheet Resistance Reduction of MoS Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
- Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
- Graded Crystalline HfO Gate Dielectric Layer for High-k/Ge MOS Gate Stack
- A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
- White Light-Emitting Diodes With Visible Uniform Spectral Power Distribution Packaged With Phosphor-in-Silicone/Phosphor-in-Glass Stacked Structure
- A Novel Real-Time TFT Threshold Voltage Compensation Method for AM-OLED Using Double Sampling of Source Node Voltage
- Etched-and-Regrown GaN
pn -Diodes With 1600 V Blocking Voltage - 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data