Editor-in-Chief and Editors

Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.

Uygar E. Avci received double-major BS degrees in Physics and Electrical Engineering from Bogazici University, Istanbul, Turkey in 1999 and was the recipient of the President’s Award. He received his MS and PhD degrees in Applied Physics from Cornell University, Ithaca, NY in 2003 and 2005, respectively. During his doctorate study, he demonstrated the first experimental realization of back-side flash memory. He joined Intel’s Components Research in 2005, leading Floating Body Cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has focused on the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He has defined Tunnel-FET device and material options, its scaling roadmap and the road blocks by bridging Physics-based models with experimental material realities. His research includes circuit evaluation of novel devices comprehending the parasitics, interconnect and density to explore their potential for future products. He is currently a Principle Engineer, leading the research for charge-based beyond-CMOS devices and circuits in Intel’s Components Research department. Dr. Avci served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference, in 2012 and 2013, respectively. He has ten filed patents and published twenty-nine papers in international conferences and journals.

Farrokh Ayazi is a professor in the School of Electrical and Computer Engineering and a Director of the Center for MEMS and Microsystems Technology (CMMT) at the Georgia Institute of Technology, Atlanta, GA. He received the B.S. degree in electrical engineering from the University of Tehran, Iran, in 1994, and the M.S. and Ph.D. degrees in electrical engineering from the University of Michigan, Ann Arbor, in 1997 and 2000, respectively. His research interests are in the areas of integrated micro- and nano-electromechanical resonators, inertial sensors, interface IC design for MEMS and sensors, and microfabrication techniques. Prof. Ayazi is a 2004 recipient of the NSF CAREER Award, the 2004 Richard M. Bass Outstanding Teacher Award (determined by the vote of the ECE senior class), the ECE Outstanding Junior Faculty Member Award, and the Georgia Tech College of Engineering Cutting Edge Research Award for 2001–2002. He is an editor for the IEEE/ASME Journal of Microelectromechanical Systems. He was the chairman of the Display, Sensors and MEMS (DSM) sub-committee at the IEEE International Electron Devices Meeting (IEDM 2011). He served on the technical program committee of the IEEE International Solid State Circuits Conference (ISSCC) for six years (2004-2009). He and his students won the best paper awards at Transducers 2011, the IEEE International Frequency Control Symposium in 2010, and IEEE Sensors conference in 2007. He will be the general co-chair of the IEEE Micro-Electro-Mechanical-Systems (MEMS) conference in 2014. Dr. Ayazi is the Co-Founder and Chief Technology Officer (CTO) of Qualtré Inc., a spin-out from his research Laboratory that commercializes multi-axis bulk-acoustic-wave (BAW) silicon gyroscopes and multi-degrees-of-freedom inertial sensors for personal navigation systems.

Muhannad S. Bakir received the B.E.E. degree (summa cum laude) from Auburn University, Auburn, AL, in 1999 and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology (Georgia Tech) in 2000 and 2003, respectively. He is currently an Associate Professor and the ON Semiconductor Junior Professor in the School of Electrical and Computer Engineering at Georgia Tech. His areas of interest include three-dimensional (3D) electronic systems, advanced interconnection and packaging, and nanofabrication technology. He is the co-editor (with James D. Meindl) of a book entitled Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Artech House, 2009) and is the author/coauthor of more than 110 journal publications and conference proceedings, 14 US patents, and the presenter of 2 conference tutorials, including an invited tutorial on 3D technology at the 2007 International Solid-State Circuits Conference (ISSCC). Dr. Bakir is the recipient of the 2013 Intel Early Career Faculty Honor Award, 2012 DARPA Young Faculty Award, 2011 IEEE CPMT Society Outstanding Young Engineer Award, and was an Invited Participant in the 2012 National Academy of Engineering Frontiers of Engineering Symposium. He is also a recipient of the Semiconductor Research Corporation (SRC) Inventor Recognition Awards (2002, 2005, 2009). Dr. Bakir also received twelve conference and student paper awards including one from the IEEE Custom Integrated Circuits Conference (CICC), five from the IEEE Electronic Components and Technology Conference (ECTC), and three from the IEEE International Interconnect Technology Conference (IITC). Dr. Bakir an Associate Editor of IEEE Transactions on Components, Packaging and Manufacturing Technology, and was a Guest Editor of the June 2011 Special Issue of IEEE Journal of Selected Topics in Quantum Electronics. He is also a member of the International Technology Roadmap for Semiconductors (ITRS) technical working group for Assembly and Packaging (AP).

Richard G. Carter graduated in physics from the University of Cambridge in 1965 and received his PhD in electronic engineering from the University of Wales in 1968. From 1968 to 1972 he worked on high power travelling-wave tubes as a Development Engineer at English Electric Valve Co. Ltd.. He joined the Engineering Department of the University of Lancaster as a Lecturer in 1972 and was promoted to Senior Lecturer in 1986 and Professor of Electronic Engineering in 1996. He became an Emeritus Professor on his retirement in 2009. His research interests include electromagnetics and microwave engineering with particular reference to the theory, design and computer modelling of microwave tubes and particle accelerators. He is the author of two books and numerous papers in the field. He is currently working on a book entitled 'Microwave and RF Vacuum Electronic Power Sources' to be published by Cambridge University Press in 2018. Professor Carter is a Fellow of the IET, a Senior Member of IEEE and was a member of the Vacuum Electronics Technical Committee of the IEEE Electron Devices Society from 1998 to 2015. He received the IVEC 2009 Award for Excellence in Vacuum Electronics for ‘a life-long commitment to education in vacuum electronics and visionary leadership in academia and technical research in the field’. He has been an editor for T-ED since 2011.

Talk titles:

·        Modeling and Simulation of Negative Capacitance Transistors

·        Compact Modeling of GaN HEMTs using industry standard ASM-HEMT model

·        Physics and Modeling of FinFET and Nanosheet Transistors

·        Analog and RF Modeling in BSIM-BULK model

·        Physics and Modeling of FDSOI Transistors

Yogesh Singh Chauhan is an associate professor at Indian Institute of Technology Kanpur (IITK), India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard models: ASM-GaN-HEMT model, BSIM-BULK model (formerly BSIM6), BSIM-CMG model and BSIM-IMG model. His research group is involved in developing compact models for GaN transistors, FinFET, Nanosheet/Gate-All-Around FETs, FDSOI transistors, Negative Capacitance FETs and 2D FETs. His research interests are characterization, modeling, and simulation of semiconductor devices.

            He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the member of IEEE-EDS Compact Modeling Committee and fellow of Indian National Young Academy of Science (INYAS). He is the founding chairperson of IEEE Electron Devices Society U.P. chapter and Vice-chairperson of IEEE U.P. section. He has published more than 200 papers in international journals and conferences.

            He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015, CNR Rao faculty award, Humboldt fellowship and Swarnajayanti fellowship in 2018. He has served in the technical program committees of IEEE International Electron Devices Meeting (IEDM), IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE European Solid-State Device Research Conference (ESSDERC), IEEE Electron Devices Technology and Manufacturing (EDTM), and IEEE International Conference on VLSI Design and International Conference on Embedded Systems.

Kyung Cheol Choi received the B.S. degree from the Department of Electrical Engineering, Seoul National University, Seoul Korea, in 1986, and the M.S. degree and Ph.D. degree in plasma engineering from Seoul National University in 1988 and 1993, respectively. From 1993 to 1999, he was involved with researching and developing display devices at the Institute for Advanced Engineering, Spectron Corporation of America, and Hyundai Electronics Industries. From 2000 to 2004, he was an Associate Professor with the Department of Electronics Engineering, Sejong University, Seoul, Republic of Korea. He was also in charge of the Information Display Research Center supported by the Korean Ministry of Information and Communication. Since February 1, 2005, he has been with the Department of Electrical Engineering, KAIST, Daejeon, Korea, where he was first an Associate Professor and is currently a KAIST Chair Professor. Since September 2007, he has been in charge of the Center for Advanced Flexible Display Convergence supported by the Korean Ministry of Education, Science, and Technology. He has also been in charge of LG Display –KAIST Cooperation center since 2010. His research interests include flexible and transparent displays, organic light-emitting diodes, and surface plasmon applications for electronic devices and displays. Dr. Choi is a member of the IEEE, the Society for Information Display, and the Korean Information Display Society. He had been an Associate Editor of IEEE/OSA Journal of Display Technology from 2005 to 2010.

Christian Monzio Compagnoni received the Laurea (cum laude) degree in Electronic Engineering and the Ph.D. degree in Information Technology from the Politecnico di Milano, Milan, Italy, in 2001 and 2005, respectively. Since 2006 he has been with the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy, first in the capacity of Assistant Professor (from April 2006 to March 2015) and then of Professor of Electronic Engineering (since March 2015). Christian Monzio Compagnoni's research activities have been devoted to the basic physics involved in the operation and in the reliability of solid-state technologies for data storage, with emphasis on deca-nanometer NOR and NAND Flash memories and on emerging memories based on discrete traps. On these topics, he authored more than 100 papers published in international journals (among which more than 30 IEEE-TED papers) and conference proceedings and he holds 2 US patents. Christian Monzio Compagnoni was the recipient of 5 awards at the IEEE-IRPS ("Outstanding paper Award" in 2008, "Best Student Paper Award" in 2012, 2013 and 2014, and "Best Poster Award" in 2015) and served in the technical program committee of the IEEE-IRPS in 2009 ("Memory" committee), 2010 ("Memory" committee) and 2016 ("Memory and product IC reliability" committee).

Lecture Topics: ESD and Latchup Reliability

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

 

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

 

Elena Gnani received the M.S. degree in Electrical Engineering "summa cum laude" and the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled "Physical models for MOS nanostructures", both from the University of Bologna. She joined the Department of Electrical, Electronic and Information Engineering at the University of Bologna in 2004, where she is currently Associate Professor. Her research interests include the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), steep-slope devices, quasi ballistic transport in nanoMOSFETs, as well as carrier injection in non-volatile memory cells. She has been involved in several National and European Projects. Her research activities have been carried out in cooperation with worldwide semiconductor research centers and semiconductor industries. E. Gnani is author or co-author of more than 180 papers published in referred international journals and in proceedings of major international conferences, and of several invited contributions, and has been involved in outstanding conferences such as IEDM, DATE, ESSDERC, EUROSOI-ULIS. She has been a member of the IEEE Electron Devices Society (EDS) from 2001, and is presently an IEEE Senior Member and EDS Distinguished Lecturer for Region8. She is also a member of the EDS Technology Computer Aided Design Committee and serves as an associate editor of the IEEE Transactions on Electron Devices.

Lecture Topics:
- Trends and Challenges in Nanoelectronics for the Next Decade
- Steep-slope devices: prospects and challenges
- Theoretical Analyses and Modeling for Nanoelectronics
- Tunnel FETs: Device Physics and Realizations

Prof. Tibor Grasser is an IEEE Fellow and currently head of the Institute for Microelectronics at TU Wien. He has edited various books, e.g. on the bias temperature instability and hot carrier degradation (both Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).

 

Lecture Topics:

- Semiconductor device reliability (bias temperature instability, hot carrier degradation)
- Noise (RTN, 1/f)
- 2D devices (defects, hysteresis, drifts)

Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.

Dr. Edmundo A. Gutiérrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008. Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).

 

Lecture Topics:

-Semiconductor device physics, characterization, and modeling

-Cryogenic electron devices physics, sensors, and systems

-Electro-thermal modeling and thermo-magnetics effects

-Degradation and reliability of advanced FET technologies

Prof. JianJang (J.J.) Huang received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, in 1994 and 1996, respectively, and the Ph.D. degree in Electrical Engineering from the University of Illinois, Urbana-Champaign, in 2002. He had worked with WJ (Watkins Johnson) Communications in California, as a Staff Scientist from 2002 to 2004. He then came back to Taiwan in 2004 and is currently the professor at NTU EE and GIPO. Prof. Huang has been involved in the development of optoelectronic and electronic devices. He has developed a spin-coating method for nanosphere lithography (NSL) to significantly improve the performance of light emitting diodes (LEDs), solar cells and nanorod devices. His NSL approach has been licensed to several LED companies in Taiwan. He has also fabricated and characterized IGZO TFTs and the corresponding circuits on glass and flexible substrates. In recent years, his group has spent great efforts in realizing cancer cell probes using ZnO nanorods, and high-sensitivity protein sensors based on IGZO TFTs. Prof. Huang is a member of the Phi Tau Phi Scholastic Honor Society. He received “Wu Da-Yu” award in 2008, the most prestigious one for young researchers in Taiwan sponsored by National Science Council. And in the same year, he received the award for the most excellent young electrical engineer from the Chinese Institute of Electrical Engineering. He has served in several IPO committees in Taiwan Stock Exchange. He is currently the board director of GCS holdings in Torrance, CA, USA and the conference chair of SPIE, International Conference on Solid-State Lighting.

Dr. Muhammad Mustafa Hussain (PhD, ECE, UT Austin, Dec 2005) is a Professor of Electrical Engineering, KAUST. He was Program Manager in SEMATECH (2008-2009) and Process Integration Lead for 22 nm node FinFET CMOS in Texas Instruments (2006-2008). His research is focused on futuristic electronics which has received support from DARPA, Boeing, Lockheed Martin, GSK-Novartis and SABIC. He has authored 300+ research papers and patents. His students are serving as faculty in KFUPM, KAU, Jeddah University and as researchers in MIT, Caltech, UC Berkeley, Harvard, UCLA, TSMC, and DOW Chemicals. He is a Fellow of American Physical Society and Institute of Physics, a distinguished lecturer of IEEE Electron Devices Society, and an Editor of IEEE T-ED. Scientific American has listed his research as one of the Top 10 World Changing Ideas of 2014. Applied Physics Letters selected his paper as one of the Top Feature Articles of 2015. He and his students have received 41 research awards including IEEE Outstanding Individual Achievement Award 2016, Outstanding Young Texas Exes Award 2015 DOW Chemical Sustainability Challenge Award 2012, etc. His research has been highlighted extensively in international media like in Washington Post, Wall Street Journal (WSJ), IEEE Spectrum, etc. Lecture Titles: 1. Physically Compliant CMOS Electronics Enabled Interactive Electronic System 2. Manufacturable Heterogeneous Integration of Compliant CMOS Electronics for Interactive Electronic System

 

Lecture Topics:

- MOS Devices and Technology

 

Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.

 

Lecture Topics

Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices

Karol Kalna received M.Sc. degree (Hons.) in Solid State Physics in 1990 and Ph.D. degree in Condensed Matter Physics in 1998 from Comenius University, Bratislava, Czechoslovakia. In 1994, he joined Institute of Electrical Engineering, Bratislava, Slovakia, as a Research Scientist. He was a visiting postgraduate student in the Department of Physics, UIA University of Antwerp, Belgium, in 1994 and 1997, working on semiconductor lasers modelling. From 1999 till 2010, he was in the Department of Electronics & Electrical Engineering, University of Glasgow, U. K., where he was studying the scaling of high electron mobility transistor (HEMT) into sub-100 nm dimensions performing DC and RF analysis within ensemble Monte Carlo simulations. From 2002, he pioneered III-V MOSFETs for future digital technology studying transistor scaling with Monte Carlo simulations. From 2007 till 2012, he was an Engineering and Physical Sciences Research Council (EPSRC) Advanced Research Fellow carrying out the Monte Carlo modelling of deep sub-100 nm, ultra-thin body transistors with Si and high mobility materials in a channel. He was involved in several research projects on III-V MOSFETs for digital applications funded by ESPRC and European Community (DualLogic). In 2010, he became a Senior Lecturer and, in 2013, Associated Professor in College of Engineering, Swansea University, Wales, U. K., establishing his own Nanoelectronic Devices Computational Group. He has more than 200 publications including 81 papers in peer-review journals, 3 book chapters and more than 20 invited talks. He is a Senior Member of the IEEE. His research interests include finite element 2D and 3D Monte Carlo simulations of nanoscaled MOSFETs including FinFETs and gate-all-around nanowires with a channel based on Si, strain Si, and III-V semiconductors; quantum transport simulations using Non-Equilibrium Green's Functions; multiscale modelling coupling density functional theory calculations with Monte Carlo simulations; and simulations of GaN based HEMTs and ZnO nanowires.

Jinfeng Kang received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics & microelectronics from Peking University in 1992 and 1995 respectively. From 1996 to 1997 he worked on the new oxides applications in microelectronics at Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work on high-k/metal gate technology at SNDL in National University of Singapore as a visiting professor. He is now a Full Professor of Electronics Engineering Computer Science School in Peking University. His research interest is to explore novel device concepts, structures, materials, circuits, and the system architectures for the applications of future computing and data storage systems. He has published over 200 conference and journal papers, and was speaker of more than 30 invited talks such as IEDM, ASP-DAC, MRS.

Dr. Brajesh Kumar Kaushik (S’07–M’09–SM’13) received his Ph.D. degree in 2007 from Indian Institute of Technology Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; and since April 2014 he has been working as an Associate Professor. He has authored and reviewed several research publications in renowned journals, national and international conferences. He is a Senior Member of IEEE and holds the position of Editor and Editor-in-Chief of various journals in the field of VLSI and microelectronics. He has received many awards for his significant contribution to the scientific community. His research interests include spintronics-based devices and circuits, high-speed interconnects low-power VLSI design, memory design, carbon nanotube-based designs, organic electronics, FinFET device circuit co-design.

 

Lecture Topics

- Spintronics based Quantum Computing Architecture

- Neuromorphic Computing Using Non-volatile Memory

- Graphene based Interconnect Modelling

- Spintronics-Perspectives and Challenges

- Modeling and Application of FinFET

Hagen Klauk (S’97–M’99) received the Diplom-Ingenieur degree in electrical engineering from Chemnitz University of Technology, Germany, in 1995 and the Ph.D. degree in electrical engineering from the Pennsylvania State University in 1999. From 1999 to 2000, he was a Postdoctoral Researcher with the Center for Thin Film Devices at the Pennsylvania State University. In 2000, he joined Infineon Technologies, Erlangen, Germany. Since 2005, he has been head of the Organic Electronics group at the Max Planck Institute for Solid State Research, Stuttgart, Germany. His research focuses on flexible electronics based on organic semiconductors, carbon nanotubes and inorganic semiconductor nanowires.

Dr. Lalit Kumar received his Ph.D. (Physics) from Birla Institute of Technology & Science Pilani. He is the Chairman, Centre for Personnel Talent Management (CEPTAM), DRDO, Delhi and Adjunct Professor at IIT, Roorkee. He was the Director of Microwave Tube Research and Development Centre, DRDO, Bangalore (2003-15); Senior Scientist at Central Electronics Engineering Research Institute, Pilani; DAAD Research Fellow in Germany at the University of Tuebingen, Tuebingen, Technical University of Hamburg–Harburg and Philips, Hamburg; Honorary Visiting Research Fellow at Lancaster University; AICTE-INAE Distinguished Visiting Professor at IT, BHU, Varanasi. He attended Executive Education Programmes at: IIMs at Bangalore & Ahmedabad; NIAS, Bangalore and JF Kennedy School of Government, Harvard University, Cambridge. His contributions encompass: theory, simulation and engineering development of microwave tubes like: coaxial magnetron, helix- and coupled-cavity-traveling wave tubes, multi-beam klystron, vircator, relativistic magnetron, Gyrotron; microwave power modules and compact transmitters. He has coordinated several inter-laboratory and international collaborative projects. His current interests include: TWTs, high power microwaves, and vacuum microelectronic devices. He received the DRDO Agni Award for Excellence in Self-Reliance – 2003 & 2013, 37th IETE Ram Lal Wadhwa Award & Gold Medal- 2014l, IETE-IRSI (83)-2001 Award, JC Bose Memorial Award of IETE for Best Paper -1993, and Best Project Award of CEERI-1993. He is a Fellow, Indian National Academy of Engineering; Fellow IETE; Fellow and Founder President Vacuum Electron Devices and Applications (VEDA) Society, India; Senior Member, IEEE; Member: Indian Physics Association, Indian Vacuum Society, Indo–French Technical Association, Magnetics Society of India; and member-EXECOM, IEEE Delhi section; Editor, EEE Trans. on Electron Devices; He was member IEEE EDS Tech Committee on vacuum electronics; and General Chair, IEEE-IVEC-2011, Bangalore, India.

Ekkanath Madathil Sankara Narayanan (M’87–SM’00) was born in India, in 1962. He received his B.Sc. and M.Sc. degrees from PSG College of Technology, Coimbatore, India, M.Tech degree from the Indian Institute of Science, Bangalore and his Ph.D. degree from the University of Cambridge, U.K. He was a Maudslay Engineering Research Fellow in Pembroke College, Cambridge and a Research Associate with Engineering Department, Cambridge University during 1992–1994. He was the Director of the Emerging Technologies Research Center, De Montfort University, UK during 1994–2007. He is currently with the Electrical Machines and Drives Research Group at the University of Sheffield in the UK, where he holds the Rolls Royce/Royal Academy of Engineering Chair in Power Electronics Systems and Royal Society Industry Fellowship in Rolls-Royce, UK. His research interests include integrated and discrete power device technologies in Silicon and wide band gap materials, design for manufacturability and compact power converters for automotive/aerospace applications, functional materials, thin film transistors, RF technologies, and technology strategies in microelectronics. He is an author of more than 200 articles and holds twenty five patents, approved or pending approval. He is a Fellow of IET and IOP. He is in the editorial boards of IEEE Transactions on Devices and Materials Reliability and IET Journal of Power Electronics.

Javier Mateos (M’09) was born in Salamanca, Spain, in 1970. He received the B.S. and Ph.D. degrees in physics from the University of Salamanca in 1993 and 1997, respectively. Since 1993, he has been with the Department of Applied Physics of the University of Salamanca, becoming Full Professor in 2017. He was coordinator of EU project ROOTHz aiming at fabricating THz emitters and detectors using semiconductor nanodevices. In addition to THz devices, his present research interests also include the development of novel device concepts using ballistic transport and HEMTs based in both narrow and wide bandgap III–V semiconductors. He is author or co-author of more than 120 indexed journal papers and 200 conference contributions.

Youichi Momiyama received the B.S. and M.S. degree in electronics engineering from Niigata University, Niigata, Japan, in 1990 and 1992, respectively. In 1992, he joined Fujitsu Laboratories Ltd., Atsugi, Japan, where he has been engaged in research and development of low-power and high-speed CMOS devices. He developed the deep sub-micron high-k / metal gate transistor using Ta2O5 / TiN stack in 1997, and accelerated the research and development of high-k materials as a gate stack application. After that, he was engaged in research of RF-CMOS transistor design based on the bulk and SOI technologies for SOC application. He has also been engaged in process integration of 130-45 nm LP and HP technologies at the same time. His present activities include process integration of 32/28 nm node LP and HP technologies, Si MOSFET scaling, device characterization and circuit-device co-design. Mr. Momiyama is a member of the IEEE electron devices society and solid-state circuits society.

Guofu Niu received the B.S., M.S. and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively. From 1995 to 1997, he was a research assistant at City University of Hong Kong. Since 1997, he has been with Auburn University, Auburn, AL, where he is currently Professor of electrical and computer engineering. He held an Alumni Professorship from 2005 to 2010. His research and teaching activities include SiGe devices, RF CMOS, high-frequency on-chip characterization, noise, radiation effects, low temperature electronics, compact modeling and TCAD. He has published over 100 journal papers and over 100 conference papers, and is the co-author of the book Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003 (with John Cressler), and many book chapters. Dr. Niu has served on committees of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2001-2008), the IEEE Nuclear and Space Radiation Effects Conference (program committee, 2002, awards committee 2010, 2011), the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2004-2007, program chair 2007, general chair 2009), and the ECS SiGe Materials, Processing and Device Symposium (2004-present), and the IEEE International SiGe Technology and Device Meeting (2012).

Prof. Yong-Young Noh is working as Professor in Department of Chemical Engineering at POSTECH from 2019. He received Ph.D. in 2005 at GIST and then worked at the Cavendish Laboratory as a Post-doc. (2005 – 2007). After then he worked in ETRI as a Senior researcher (2008 – 2009), Hanbat National University as an Assistant professor (2010 – 2012), and Dongguk University-Seoul as an Associate Professor (2013-2018). Prof. Noh has been published more than 270 SCI papers and 60 patents and awarded Merck Young Scientist Award (2013), Korean President Award (2014), IEEE George E. Smith Award (2014), This Month Scientist Award of Korea (2016), and Samsung Display-KIDS Gold Award (2017). He also edited a book entitled “Large Area Flexible Electronics” (John-Wiley VCH). His expertise is in the organic and molecular electronics, printed electronics, and flexible electronics.

Marcelo Antonio Pavanello (S´99-M´02-SM´05) received the Electrical Engineering degree from FEI University in 1993, receiving the award “Instituto de Engenharia” given for the best student among all the modalities of engineering programs offered at FEI. He received the M. Sc. and Ph. D. degrees in 1996 and 2000, respectively, in Electrical Engineering (Microelectronics) from University of São Paulo, Brazil. From August to December 1998 he was with Laboratoire de Microélectronique from Université Catholique de Louvain (UCL), Belgium, working in the fabrication and electrical characterization of novel channel-engineered Silicon-On-Insulator (SOI) transistors. From 2000 to 2002 he was with the Center of Semiconductor Components and Nanotechnologies, State University of Campinas, Brazil, where he worked as a post-doctoral researcher in the development of a CMOS n-well process. Since 2003 he joined FEI University where he is now Full Professor at Electrical Engineering Department. In 2008 he has been with UCL as a visiting professor. Dr. Pavanello is Senior member of The IEEE and Brazilian Microelectronics Society. He is also Research Associate to the National Council for Scientific Development (CNPq), Brazil. Since 2007 he serves as IEEE Electron Devices Society (EDS) Distinguished Lecturer and has been nominated to the Compact Modeling Technical Committee of EDS in 2018. He is author and co-author of more than 300 technical papers in peer-reviewed journals and conferences, and author/editor of 6 books. Dr. Pavanello coordinates several research projects fomented by Brazilian agencies like FAPESP, CNPq and Capes. He also supervised several Ph. D. dissertations, M. Sc. thesis and undergraduate projects in Electrical Engineering. His current interests are the compact modeling, fabrication, electrical characterization and simulation of SOI CMOS transistors with multiple gate configurations and silicon nanowires; the wide temperature range of operation of semiconductor devices; the digital and analog operation of novel channel-engineered SOI devices and circuits.

 

Lecture Topics:

-Junctionless Nanowire Transistors: Electrical Characteristics and Compact Modeling;
-Physics and Electrical Characterization of Multiple-Gate Transistors (Nanowires and FInFETs) in a Wide Temperature Range of Operation;
-Impact of Channel Engineering on SOI Devices and Circuits;
-Operation and Modeling of Silicon-On-Insulator MOSFETs in Cryogenic Environments.

Siddharth Rajan is Associate Professor in the Electrical and Computer Engineering and Material Science and Engineering departments at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions in UC Santa Barbara and GE Global Research, NY. His research interests include semiconductor devices and materials, molecular beam epitaxy, transport and heterostructure phenomena, and high frequency transistors. He has co-authored over 100 journal papers.

Andries J. Scholten received the M.Sc. and Ph.D. degrees in experimental physics from Utrecht University, The Netherlands, in 1991 and 1995, respectively. In 1996, he joined Philips Research Laboratories (now NXP Semiconductors), Eindhoven, The Netherlands, where he has worked on compact MOS modeling for circuit simulation, with a focus on the modelling of thermal noise and non-quasi-static effects. He has contributed to the development and industrialization of well-known compact MOSFET models such as MOS Model 9, MOS Model 11, and the world-standard PSP model. His current research is directed towards RF CMOS and HBT reliability and reliability simulation.

Dr. Frank Schwierz serves as Privatdozent and is Head of the RF & Nano Device Research Group at Technische Universitaet Ilmenau, Germany. His research is focused on novel device and material concepts for future electronics. At present, he is particularly interested in 2D (two-dimensional) electronic materials.

Frank is conducting research projects funded by the European Community, German government agencies, and the industry. He was involved in the development of the fastest Si-based transistors worldwide in the late 1990s, of Europe's smallest MOSFETs in the early 2000s, as well as of the fastest GaN HEMTs on Si and the fastest GaN tri-gate HEMTs worldwide in the 2010s. His recent work on 2D materials made a major contribution to the current understanding of the merits and drawbacks of 2D devices and 2D electronics.

Frank has published more than 270 journal and conference papers including 50 invited/keynote papers. He is author of the books Modern Microwave Transistors (J. Wiley & Sons 2003) and Nanometer CMOS (Pan Stanford Publishing 2010) and editor of the book Two-Dimensional Electronics – Prospects and Challenges (MDPI 2016).

Frank is Senior Member of the IEEE and serves as a committee member of international conferences (most notably IEDM 2018 and 2019) and as an editor of the IEEE Transactions on Electron Devices. Moreover, he has been one of the key contributors to the Emerging Research Devices Chapters of the 2013 and 2015 ITRS editions.

 

Lecture Topics

- 2D (Two-Dimensional) Electronic Materials

- 2D Devices and 2D Electronics

- Past, Present, and Future of CMOS Scaling

- Moore's Law and CMOS Scaling

Charles Surya received his PhD in Electrical Engineering from the University of Rochester in 1987. From 1987 to 1994 he was associated with the Electrical and Computer Engineering Department of Northeastern University. He joined the Electronic and Information Engineering (EIE) Department in 1994 and remained there since. Professor Surya’s research interests are: optoelectronic materials and devices including MOCVD growth of GaN thin films and the study of GaN-based LEDs and UV detectors; growth of organic-inorganic hybrid perovskite materials and the fabrication of advanced perovskite based photovoltaic cells; and low-frequency noise in electron devices. Presently, Professor Surya is spearheading a collaborative effort between The Hong Kong Polytechnic University and the City of Dongguan, China for the establishment of an R&D Center on the study of photovoltaic materials, devices and systems. He became a full professor of the Department in 2002andsince 2013hewas appointed Clarea Au Endowed Professor in Energy. Professor Surya had served in various administrative posts including Associate Head of the EIE Department (2002-2005), Associate Dean of the Faculty of Engineering (2007 – 2010) and the Acting Dean of the Faculty of Engineering (2010 – 2012) of The Hong Kong Polytechnic University. While serving as the Associate Dean and Acting Dean of the Faculty he was responsible for the implementation of outcome-based approach in the Engineering Faculty. From 2007 – 2013 Professor Surya was the The Hong Kong Polytechnic University representative to the Hong Kong University Grants Council Panel for Outcome-based Education to oversee the implementation of Outcome-based Approach among the Engineering Faculties in Hong Kong. He had been active in EDS and had served in various capacities including conference co-chair and chapter chair in the past. He is presently serving as the Chairman of the Optoelectronic Devices Technical Committee.

Manfred Thumm (SM’94-F’02) was born in Magdeburg, Germany, on August 5, 1943. He received the Dipl. Phys. and Dr. rer. nat. degrees in physics from University of Tübingen, Germany, in 1972 and 1976, respectively. At the University of Tübingen he was involved in the investigation of spin-dependent nuclear forces in inelastic neutron scattering. From 1972 to 1975 he was Doctoral Fellow of the Studienstiftung des deutschen Volkes. In 1976 he joined the Institute for Plasma Research in the Electrical Engineering Department of the University of Stuttgart, Germany, where he worked on RF production and RF heating of toroidal pinch plasmas for thermonuclear fusion research. From 1982 to 1990 his research activities were mainly devoted to electromagnetic theory and experimental verification in the areas of component development transmission of very high power millimeter waves through oversized waveguides and of antenna structures for RF plasma heating with microwaves. In June 1990 he became a Full Professor at the Institute for Microwaves and Electronics of the University of Karlsruhe, Germany, and Head of the Gyrotron Development and Microwave Technology Division, Institute for Technical Physics, Research Center Karlsruhe (Forschungszentrum Karlsruhe: FZK). From April 1999 to September 2011, he was the Director of the Institute for Pulsed Power and Microwave Technology, FZK, where his current research projects have been the development of high power gyrotrons, dielectric vacuum windows, transmission lines and antennas for nuclear fusion plasma heating, and industrial material processing. On October 1, 2009, the University of Karlsruhe and the FZK have merged to the Karlsruhe Institute of Technology (KIT). M. Thumm has authored/co-authored 6 books, 20 book chapters, 360 research papers in refereed scientific journals, and more than 1440 conference proceedings articles. He holds 14 patents on active and passive microwave devices. He is member of the IEEE EDS Vacuum Devices Technical Committee and former member of the NPSS PSAC Executive Committee, a member of the Chapter 8.6 Committee Vacuum Electronics and Displays of the Information Technical Society in German VDE (Chairman from 1996 to 1999) and a member of the German Physical Society. From 2007 to 2008 he was an EU member of the ITER Working Group on Heating and Current Drive, the vice chairman of the Scientific-Technical Council of the FZK and the vice chairman of the Founding Senate of the KIT. From 2008 to 2010 he was the deputy head of the Topic Fusion Technology of the KIT Energy. He was the General Chair of the IRMMW-THz 2004 and IEEE ICOPS 2008 Conference in Karlsruhe, Germany. He has been a member of the International Organization and Advisory Committees of many International Conferences and a member of the Editorial Boards of several ISI refereed journals. From 2003 to 2010 he was the ombudsman for upholding good scientific practice at FZK/KIT. Since 2012 he has been Editor for Vacuum Electronics Devices of IEEE Trans. Electron Devices and Distinguished Lecturer of IEEE NPSS and since 2013 KIT Distinguished Senior Fellow and member of the International Advisory Committee of Cooperative Innovation Centre of THz Science in China. He was awarded with the Kenneth John Button Medal and Prize 2000, in recognition of outstanding contributions to research on the physics of gyrotrons and their applications. In 2002, he was awarded the title of Honorary Doctor, presented by the St. Petersburg State Technical University, for his outstanding contributions to the development and applications of vacuum electron devices. He received the IEEE-EDS 2008 IVEC Award for Excellence in Vacuum Electronics for outstanding achievements in the development of gyrotron oscillators, microwave mode converters and transmission line components, and their applications in thermonuclear fusion plasma heating and materials processing. Together with two of his colleagues he received the 2006 Best Paper Award of the Journal of Microwave Power and Electromagnetic Energy and the 2009 CST University Publication Award. In 2010 he was awarded with the IEEE-NPSS Plasma Science and Applications Award for outstanding contributions to the development of high power microwave sources (in particular gyrotrons) for application in magnetically confined fusion plasma devices as well as for stimulation and establishing of extensive international co-operations. He is a winner of the 2010 open grant competition of the Government of the Russian Federation to support scientific research projects implemented under supervision of Leading Scientists at Russian institutions of higher education (with Novosibirsk State University). Together with A. Litvak and K. Sakamoto he has been the recipient of the EPS Plasma Physics Innovation Prize 2011 for outstanding contributions to the realization of high power gyrotrons for multi-megawatt long-pulse electron cyclotron heating and current drive in magnetic confinement nuclear fusion plasma devices. In 2012 he was awarded with the Heinrich Hertz Prize of the EnBW Foundation and the KIT for outstanding contributions to generation, transmission and mode conversion of high and very high microwave power for nuclear fusion and the HECTOR School Teaching Award in Embedded Systems Engineering.

Wilman Tsai is currently Program Manager of Technology Manufacturing Group, Intel Corporation, Santa Clara, CA. He manages external device research group at Intel, responsible for research programs in advanced logics and memory devices for 10 nm node and beyond; include universities, SRC/Focus Center Research Program and industrial consortia of Sematech and IMEC. He chairs the Emerging Research Device forum at Intel where he manages over 40 university research programs in charged-based scaling of CMOS logic and memory devices. His device research team at Intel is currently focused on emerging research logic device using non-Si channels as Ge and InGaAs, high k dielectrics and exploratory memory devices. Dr. Tsai serves on senior advisory boards of Sematech and IMEC research consortia and is SRC Device Science Steering Advisory Committee chair (SACC) with Mahboob Khan Outstanding Industry Liaison Awards in 2009. He obtained his PhD from California Institute of Technology in 1987. He is also a visiting faculty at Stanford University, Center of Integrated Systems, and senior member of IEEE, Material Research Society and Electrochemical Society. He holds 25 US Patents and over 100 journal/conference publications.

Florin Udrea is a professor in semiconductor engineering and head of the High Voltage Microelectronics and Sensors Laboratory at University of Cambridge. He received his BSc from University of Bucharest, Romania in 1991, an MSc in smart sensors from the University of Warwick, UK, in 1992 and the PhD degree in power devices from the University of Cambridge, Cambridge, UK, in 1995. Since October 1998, Prof. Florin Udrea has been an academic with the Department of Engineering, University of Cambridge, UK. Between August 1998 and July 2003 he was an advanced EPSRC Research Fellow and prior to this, a College Fellow in Girton College, University of Cambridge. He is currently leading a research group in power semiconductor devices and solid-state sensors that has won an international reputation during the last 20 years. Prof. Udrea has published over 350 papers in journals and international conferences. He holds 70 patents with 20 more patent applications in power semiconductor devices and sensors. Prof. Florin Udrea co-founded three companies, Cambridge Semiconductor (Camsemi) in power ICs, Cambridge CMOS Sensors (CCS) in the field of smart sensors and Cambridge Microelectronics in Power Devices. Prof. Florin Udrea is a board director in Cambridge Enterprise. For his ‘outstanding personal contribution to British Engineering’ he has been awarded the Silver Medal from the Royal Academy of Engineering.

Dr. Venkatasubramanian (Ph.D. Rensselaer, New York, 1988; B.S. Indian Institute of Technology, Madras, India, 1983; Electrical Engineering) is dedicated to the innovation and advancement of several solid state energy conversion materials and device technologies as well as transitioning them to the commercial and defense industries. Dr. Venkatasubramanian is presently at the Johns Hopkins University, Applied Physics Lab as Team Leader for Energy and Thermal Management in the Research and Exploratory Development department. Dr. Venkatasubramanian is also the Co-Founder of Novus Energy Technologies, a spin-off company focused on energy technologies. Until April 2013, Dr. Venkatasubramanian was the Senior Research Director of the Center for Solid State Energetics at RTI International, where he directed innovative basic and applied research in thermoelectrics, photovoltaics, and optoelectronic materials and devices for solid state energy conversion applications. Dr. Venkatasubramanian is the Founder and was also the Chief Technology Officer of Nextreme Thermal Solutions, between 2004-2006, which is commercializing thin-film thermoelectric technology developed under his leadership with DARPA funding; Nextreme was acquired by Laird Technologies in Feb. 2013. Dr. Venkatasubramanian has over 115 peer-reviewed journal and conference publications, 15 issued patents, over 100 presentations in the area of thermoelectric materials and devices, photovoltaics, optoelectronics, and 5 book chapters and edited proceedings. Dr. Venkatasubramanian initiated and developed a research program focused on demonstrating the fundamental advantages of atomically engineered superlattices and other nanoscale materials; this research resulted in the first major breakthrough in the field of thermoelectrics in 40 years (Nature 2001, Nature Nanotechnology 2009), that led to hundreds of laboratories around the world working on other nanoscale thermoelectric materials. Dr. Venkatasubramanian has received two R&D 100 Awards in 2002 and 2010 for thermoelectric innovations, the Margaret Knox Excellence Award for research at RTI in 2002 and Rensselaer’s Allen B. Dumont Prize for research achievements. Dr. Venkatasubramanian was elected Fellow of the IEEE (2011) for contributions to nanoscale thermoelectrics for thermal management of electronics and energy harvesting and a Fellow of AAAS (2012) for seminal contributions to nansocale materials and devices for advanced thermoelectric devices. Dr. Venkatasubramanian has also contributed to advances in multi-junction GaAs-based photovoltaics, received a best paper award at the IEEE First World Conference on PV (1994), and his photovoltaics work has been recognized as key achievements by Department of Energy in 1995-97. Dr. Venkatasubramanian has organized several symposia and has edited proceedings in thermoelectrics, energy harvesting and nanoscale thermal transport for the American Physical Society, Materials Research Society, IEEE and other professional societies.

Runsheng Wang (S’07-M’11) received the B.S. and Ph.D. (highest honors) degrees from Peking University, Beijing, China, in 2005 and 2010, respectively. From November 2008 to August 2009, he was a Visiting Scholar with Purdue University, West Lafayette, IN, USA. He joined Peking University in 2010, where he is currently an Associate Professor at the Institute of Microelectronics. He has authored/coauthored 1 book, 3 book chapters, and over 100 scientific papers, including more than 30 papers published in International Electron Devices Meeting (IEDM) and Symposium on VLSI Technology (VLSI-T). He has been granted 12 US patents and 29 Chinese patents. His current research interests include nanoscale CMOS devices and characterization, circuit and device interaction, and emerging technologies for new-paradigm computing. Dr. Wang was awarded the IEEE EDS Early Career Award by the IEEE Electron Device Society (EDS), NSFC Award for Excellent Young Scientists by the National Natural Science Foundation of China (NSFC), Natural Science Award (First Prize) by the Ministry of Education (MOE) of China, and many other awards. He serves on the Editorial Board of Scientific Reports, and SCIENCE CHINA: Information Sciences, and has served on the Technical Program Committee of many IEEE conferences, including IEDM, IRPS, ICSICT, IPFA, INEC, etc.

Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences. Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences. Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences. Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China. Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002. Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences.

 

Lecture Topics:

-Scaling of High-k Dielectric Films to Subnanometer EOT Range
-More Moore and More than Moore
-Non-ideal Effects of MOS Nanowire Transistors

Chen Yang received his B. S. degree and Ph.D. degree in Electronic Science and Technology from Tsinghua University, Beijing, China, in 2003 and 2008, respectively. He was a Postdoctoral Researcher at University of California at Berkeley from 2009 to 2010. Then he joined Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, as an Associate Professor. From 2013 to 2016, he worked as an Assistant Project Scientist at the Berkeley Sensors and Actuators Center (BSAC), University of California at Berkeley. Since 2016, he is with Analog Devices, Inc. in advanced MEMS development team. His research interests include MEMS physical and biological sensors, energy storage devices, RF passive devices and nano-materials. Dr. Yang was the recipients of the IEEE Electron Devices Society (EDS) Early Career Award in 2010, and the IEEE ElectronDevices Society Ph.D. Student Fellowship Award in 2007. He has been serving as TPC member of IEEE RFIC Symposium since 2012. He served as the vice chair of IEEE EDS Regions 4-6 SRC and member of the EDS Membership Committee. He was the tutorial chair of 2009 Silver Jubilee Conference on Communication Technologies and VLSI Design (CommV) at Vellore, Tamil Nadu, India, the secretary of the 3rd Japan-China-Korea Joint Conference on MEMS/NEMS (JCK MEMS/NEMS 2012) at Shanghai, China, and the secretary of 2007 International Workshop on Electron Devices and Semiconductor Technology (IEDST 2007) at Beijing, China. He was the founding Chair of IEEE Electron Devices Society Tsinghua University Student Branch Chapter at Beijing, China.

Darrin J. Young received his B.S., M.S., and Ph.D. degrees from the Department of Electrical Engineering and Computer Sciences at University of California at Berkeley in 1991, 1993, and 1999, respectively. Dr. Young pioneered the research work in MEMS-based, high-Q, tunable capacitors and on-chip 3-D coil inductors for low phase noise RF voltage-controlled oscillator (VCO) design for wireless communication applications. His doctoral thesis work demonstrated the first RF-CMOS VCO employing on-chip high-Q passive devices achieving the stringent GSM phase noise requirements. Between 1991 and 1993, he worked at Hewlett-Packard Laboratories in Palo Alto, California, where he designed a shared memory system for a DSP-based multiprocessor architecture. Between 1997 and 1998, he worked at Rockwell Semiconductor Systems in Newport Beach, California, where he designed silicon bipolar RF analog circuits for cellular telephony applications. During this time period he was also at Lawrence Livermore National Laboratory, working on the design and fabrication of three-dimensional RF MEMS coil inductors for wireless communications. Dr. Young joined the Department of Electrical Engineering and Computer Science at Case Western Reserve University in 1999 as an assistant professor. In 2009 he joined the Electrical and Computer Engineering Department at the University of Utah as an USTAR associate professor, where he currently serves as an associate department chair. His interests include micro-electro-mechanical systems design, fabrication, and integrated circuits design for wireless sensing, biomedical implant, communication and general industrial applications as well as commercialization of wireless microsystems. He has published many technical papers in journals and conferences, and served as a technical program committee member and session chair for a number of international conferences. Dr. Young was an associate editor of the IEEE Journal of Solid-State Circuits and chair of the IEEE Electron Devices Society MEMS Committee.

Prof. Bo Zhang received his B.S. in electronic engineering from Beijing Institute of Technology in 1985 and M.S. in electronic engineering from the University of Electronic Science and Technology of China (UESTC) in 1988. From 1988 to 1996, he worked on power semiconductor devices research and development at the UESTC. From 1996 to 1999, he was a Visiting Professor at Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, U.S.A., where his research activities was modern power semiconductor devices. Since returning to UESTC, in Nov. 1999, he has worked on Power Devices and Smart Power Integrated Circuits. He is currently a full Professor of UESTC and the Director of Center for Integrated Circuit, UESTC. His research interest has been focused on the power semiconductor technology since 1987, including power discrete devices, power management ICs and power integrated technology. He has published and presented more than 300 technical papers in scientific journals and international conferences. His work has received more than 3000 citations, with h-index=25 and i10-index=88 (Source: Google Scholar).