Editor-in-Chief and Editors
Giovanni Ghione - Editor-in-Chief Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
Department of Electronics and Telecommunications
Giovanni Ghione - Editor-in-Chief
Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
David Abe - Vacuum Electron Devices
David K. Abe (M’88–SM’12) received the B.Sc. degree in engineering from Harvey Mudd College in 1981, M.S. in electrical engineering from the University of California, Davis in 1988, and Ph.D. in electrical engineering/electrophysics from the University of Maryland in 1992. Since 1997, he has been at the U.S. Naval Research Laboratory (NRL), Washington, DC, where he directs a multidisciplinary group of scientists and engineers as head of the Electromagnetics Technology Branch. The Branch carries out research and exploratory development on radio-frequency concepts, materials, devices, components, and circuits in the frequency range of 1 MHz to approximately 1 THz with focused efforts in wide and narrow bandgap semiconductor electronics, carbon-based and other novel lower dimensional electronic materials, tunable and reconfigurable materials and circuits, control components, electron emission physics, electron beam-wave interactions (vacuum electronics), and electromagnetic theory and computational techniques. Dr. Abe’s current research involves the generation of coherent microwave and millimeter-wave radiation resulting from the interaction of axially-streaming electron beams with novel electromagnetic structures, with a particular emphasis on multiple-beam devices. Prior to NRL, Dr. Abe worked on interdisciplinary projects in pulsed power, explosive-driven magnetic flux compression, high power microwave generation, and electromagnetic effects at the Lawrence Livermore National Laboratory, Berkeley Research Associates, and the U.S. Army Research Laboratory (ARL), Adelphi, MD. He was a co-guest editor of the IEEE Transactions on Plasma ScienceTenth Special Issue on High Power Microwave Generation and co-edited the Proceedings of the 7th Workshop on High Energy Density and High Power RF (RF2005). He served as the Technical Chair of the IEEE International Conference on Vacuum Electronics (IVEC) in 2012 and as the General Chair of IVEC 2014. He is a member of the IEEE Electron Devices Society Technical Committee on Vacuum Electronics, was an elected member of the IEEE Nuclear and Plasma Sciences Society (NPSS) Administrative Committee from 2008 to 2011, and served multiple terms as an elected member of the NPSS Plasma Science and Applications Executive Committee (2005–2007, 2008–2011, 2013–2015). He was a recipient of a Thomas J. Watson Fellowship, two NRL Technology Transfer Awards, and numerous official commendations and distinguished contribution awards from the Army and Navy.
Khairul Alam - Compound Semiconductor Devices
Uygar Avci - Memory Devices and Technology
Can Bayram - Optoelectronic Devices
Prof. Can Bayram is an Assistant Professor in the Department of Electrical and Computer Engineering of University of Illinois at Urbana-Champaign, IL, USA. He is an expert in III-V materials and photonic and electronic devices. He has performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition (MOCVD) systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon and investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics. Prof. Bayram’s work has been recognized widely. He is the recipient of the 2018 IUPAP Young Scientist Prize in Optics, 2018 IEEE Nanotechnology Council Early Career Award, a 2018 Dean’s Award for Excellence in Research for Assistant Professor, a 2018 Turkish American Scientists & Scholars Association Young Scholar Award, a 2017 NSF CAREER Award, the 2017 CS Mantech Best Student Paper Award, a 2016 AFOSR Young Investigator Award, the 2014 IEEE Electron Devices Society Early Career Award, and the Best Paper Award at the 11th International Conference on Infrared Optoelectronics. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior member status. Prof. Bayram worked as a Postdoctoral Research Scientist in the Silicon Technologies Division at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA from 2011 till 2014. His postdoctoral work at IBM on a novel means of thin film technology achieved record-breaking specific power solar cells and was featured on the cover of Advanced Energy Materials. He has – for the first time – integrated GaN-based devices on CMOS-compatible silicon substrates. This work was highlighted as the frontispiece in the Advanced Functional Materials issue. He demonstrated direct epitaxy of GaN on Graphene for the first time, as published in Nature Communications. Prof. Bayram received the Ph.D. degree from Prof. Manijeh Razeghi, Center for Quantum Devices, EECS of Northwestern University, IL, USA with a focus on Solid State and Photonics in 2011. His thesis work has demonstrated the first ultraviolet regime single photon detection, the first hybrid LED, and the first GaN intersubband devices. He received IEEE Electron Devices and IEEE Photonics Societies’ fellowship awards and the Laser Technology, Engineering and Applications Award from SPIE. He was an IBM and Link Foundation PhD fellow and the recipient of Boeing Engineering and Dow Sustainability Innovation awards.
Richard G. Carter - Vacuum Electron Devices
Yogesh Singh Chauhan - Device and Process Modeling
· Modeling and Simulation of Negative Capacitance Transistors
· Compact Modeling of GaN HEMTs using industry standard ASM-HEMT model
· Physics and Modeling of FinFET and Nanosheet Transistors
· Analog and RF Modeling in BSIM-BULK model
· Physics and Modeling of FDSOI Transistors
Yogesh Singh Chauhan is an associate professor at Indian Institute of Technology Kanpur (IITK), India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard models: ASM-GaN-HEMT model, BSIM-BULK model (formerly BSIM6), BSIM-CMG model and BSIM-IMG model. His research group is involved in developing compact models for GaN transistors, FinFET, Nanosheet/Gate-All-Around FETs, FDSOI transistors, Negative Capacitance FETs and 2D FETs. His research interests are characterization, modeling, and simulation of semiconductor devices.
He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the member of IEEE-EDS Compact Modeling Committee and fellow of Indian National Young Academy of Science (INYAS). He is the founding chairperson of IEEE Electron Devices Society U.P. chapter and Vice-chairperson of IEEE U.P. section. He has published more than 200 papers in international journals and conferences.
He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015, CNR Rao faculty award, Humboldt fellowship and Swarnajayanti fellowship in 2018. He has served in the technical program committees of IEEE International Electron Devices Meeting (IEDM), IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE European Solid-State Device Research Conference (ESSDERC), IEEE Electron Devices Technology and Manufacturing (EDTM), and IEEE International Conference on VLSI Design and International Conference on Embedded Systems.
Kyung Cheol Choi - Display Technology
Pei-Ying (Penny) Du - Memory Devices and Technology
Emerging Central Lab.
Elena Gnani - Senior Member
Elena Gnani received the M.S. degree in Electrical Engineering "summa cum laude" and the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled "Physical models for MOS nanostructures", both from the University of Bologna. She joined the Department of Electrical, Electronic and Information Engineering at the University of Bologna in 2004, where she is currently Associate Professor. Her research interests include the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), steep-slope devices, quasi ballistic transport in nanoMOSFETs, as well as carrier injection in non-volatile memory cells. She has been involved in several National and European Projects. Her research activities have been carried out in cooperation with worldwide semiconductor research centers and semiconductor industries. E. Gnani is author or co-author of more than 180 papers published in referred international journals and in proceedings of major international conferences, and of several invited contributions, and has been involved in outstanding conferences such as IEDM, DATE, ESSDERC, EUROSOI-ULIS. She has been a member of the IEEE Electron Devices Society (EDS) from 2001, and is presently an IEEE Senior Member and EDS Distinguished Lecturer for Region8. She is also a member of the EDS Technology Computer Aided Design Committee and serves as an associate editor of the IEEE Transactions on Electron Devices.
- Trends and Challenges in Nanoelectronics for the Next Decade
- Steep-slope devices: prospects and challenges
- Theoretical Analyses and Modeling for Nanoelectronics
- Tunnel FETs: Device Physics and Realizations
Tibor Grasser - Fellow
Prof. Tibor Grasser is an IEEE Fellow and currently head of the Institute for Microelectronics at TU Wien. He has edited various books, e.g. on the bias temperature instability and hot carrier degradation (both Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).
- Semiconductor device reliability (bias temperature instability, hot carrier degradation)
- Noise (RTN, 1/f)
- 2D devices (defects, hysteresis, drifts)
Edmundo A. Gutierrez-D. - Senior Member
Dr. Edmundo A. Gutiérrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008. Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
-Semiconductor device physics, characterization, and modeling
-Cryogenic electron devices physics, sensors, and systems
-Electro-thermal modeling and thermo-magnetics effects
-Degradation and reliability of advanced FET technologies
Bram Hoex - Solid State Energy Sources
Sung-Min Hong - Device and Process Modeling
Karol Kalna - Device and Process Modeling
Brajesh Kumar Kaushik - Senior Member
Dr. Brajesh Kumar Kaushik (S’07–M’09–SM’13) received his Ph.D. degree in 2007 from Indian Institute of Technology Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; and since April 2014 he has been working as an Associate Professor. He has authored and reviewed several research publications in renowned journals, national and international conferences. He is a Senior Member of IEEE and holds the position of Editor and Editor-in-Chief of various journals in the field of VLSI and microelectronics. He has received many awards for his significant contribution to the scientific community. His research interests include spintronics-based devices and circuits, high-speed interconnects low-power VLSI design, memory design, carbon nanotube-based designs, organic electronics, FinFET device circuit co-design.
- Spintronics based Quantum Computing Architecture
- Neuromorphic Computing Using Non-volatile Memory
- Graphene based Interconnect Modelling
- Spintronics-Perspectives and Challenges
- Modeling and Application of FinFET
Ioannis (John) Kymissis - Senior Member
Ioannis (John) Kymissis is an electrical engineer teaching at Columbia University. His area of specialization is solid state electronics and device fabrication, with an emphasis on thin film devices and the use of organic semiconductors in his work. He graduated with his SB, M.Eng., and Ph.D. degrees from MIT, and after working as a post-doc and at QDVison, joined the faculty at Columbia University in 2006. John has won a number of awards for his work, including the NSF CAREER award, the IEEE EDS Paul Rappaport award, the Vodaphone Americas Foundation Wireless Innovation Award, and the MIT Clean Energy Prize. He is currently serving as the editor-in-chief of the Journal of the Society for Information Display and is the general chair for the 2013 Device Research Conference.
- Organic semiconductors, single chip sensors, flexible electronics, micro-LEDs
Assaf Lahav - Image Sensors
Javier Mateos - Solid-State Phenomena
Yong-Young Noh - Molecular and Organic Devices
Lucio Pancheri received the M.Sc. degree (summa cum laude) in Materials Engineering and the Ph.D. in Information and Communication Technologies from the University of Trento, Italy, in 2002 and 2006, respectively. From 2006 to 2012 he has been a research scientist at Fondazione Bruno Kessler (FBK), Italy, within the Integrated Radiation and Image Sensors (IRIS) research unit. In 2012 he joined the Department of Industrial Engineering at the University of Trento where he is currently Associate Professor of Electronics. His research activity has been mainly directed towards the development of CMOS integrated Single Photon Avalanche Diodes and image sensors for Time-of-Flight ranging and scientific imaging. His research interests also include radiation and charged-particle imaging detectors for high-energy physics, medical and space applications, hybrid organic-CMOS photodetectors and gas sensors. He has authored or co-authored more than 140 papers in international journals and in the proceedings of international conferences.
Marcelo Pavanello - Senior Member
Marcelo Antonio Pavanello (S´99-M´02-SM´05) received the Electrical Engineering degree from FEI University in 1993, receiving the award “Instituto de Engenharia” given for the best student among all the modalities of engineering programs offered at FEI. He received the M. Sc. and Ph. D. degrees in 1996 and 2000, respectively, in Electrical Engineering (Microelectronics) from University of São Paulo, Brazil. From August to December 1998 he was with Laboratoire de Microélectronique from Université Catholique de Louvain (UCL), Belgium, working in the fabrication and electrical characterization of novel channel-engineered Silicon-On-Insulator (SOI) transistors. From 2000 to 2002 he was with the Center of Semiconductor Components and Nanotechnologies, State University of Campinas, Brazil, where he worked as a post-doctoral researcher in the development of a CMOS n-well process. Since 2003 he joined FEI University where he is now Full Professor at Electrical Engineering Department. In 2008 he has been with UCL as a visiting professor. Dr. Pavanello is Senior member of The IEEE and Brazilian Microelectronics Society. He is also Research Associate to the National Council for Scientific Development (CNPq), Brazil. Since 2007 he serves as IEEE Electron Devices Society (EDS) Distinguished Lecturer and has been nominated to the Compact Modeling Technical Committee of EDS in 2018. He is author and co-author of more than 300 technical papers in peer-reviewed journals and conferences, and author/editor of 6 books. Dr. Pavanello coordinates several research projects fomented by Brazilian agencies like FAPESP, CNPq and Capes. He also supervised several Ph. D. dissertations, M. Sc. thesis and undergraduate projects in Electrical Engineering. His current interests are the compact modeling, fabrication, electrical characterization and simulation of SOI CMOS transistors with multiple gate configurations and silicon nanowires; the wide temperature range of operation of semiconductor devices; the digital and analog operation of novel channel-engineered SOI devices and circuits.
-Junctionless Nanowire Transistors: Electrical Characteristics and Compact Modeling;
-Physics and Electrical Characterization of Multiple-Gate Transistors (Nanowires and FInFETs) in a Wide Temperature Range of Operation;
-Impact of Channel Engineering on SOI Devices and Circuits;
-Operation and Modeling of Silicon-On-Insulator MOSFETs in Cryogenic Environments.
David Sheridan - High Voltage and Power Devices
Gregory Snider - Emerging Technologies and Devices
Rama Venkatasubramanian - Thermal Management & Energy Harvesting
- Electron Device Letters
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