Editor-in-Chief and Editors

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

 

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

 

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

 

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

 

Syed M. Alam is the Director of Design engineering at Everspin Technologies leading the design functional areas and path finding for roadmap and technology advancement for STT-MRAM. He has worked on various aspects of memory device and design including array circuits and architecture, and new product introduction supporting test, reliability, bitcell characterization, and high-speed interface characterization for STT-MRAM. Dr. Alam received his BS degree in Electrical Engineering from UT Austin in 1999, MS and PhD degrees in Electrical Engineering and Computer Science from MIT in 2001 and 2004, respectively. He has mentored/co-advised 5 PhD students for research on 3D integration and logic-in-memory architecture. Dr. Alam has over 80 issued US patents, and over 65 journal/conference publications.

Dr MarinaAntoniou (MA) is an Associate Professor in the School of Engineering at the University of Warwick, UK. Dr Antoniou studied Electrical and Information Engineering (BA, MEng) at Trinity College, University of Cambridge and holds a PhD from the University of Cambridge. She has been the holder of several highly competitive research fellowships and grants including the Royal Society Research Fellowship 2017 (SiC Power Devices for Smart Grid Systems) , a Junior Research Fellowship (Selwyn College, Cambridge) and an Early Career EPSRC Centre for Power Electronics award, all of which involved the design and development of power SiC or Si high power devices. Her work has been published as first authored papers in leading IEEE journals and has received awards at international conferences. She has written five patents and two book chapters.

Monica Blank received the B.S. degree (Electrical Engineering) from the Catholic University of America, Washington, D.C. in 1988, and the M.S.  and Ph.D.  degrees (Electrical Engineering) in 1991 and 1994, respectively, from the Massachusetts Institute of Technology, Cambridge, MA.  In 1994 she joined the Vacuum Electronics Branch of the Naval Research Laboratory, where she was responsible for the design and demonstration of high-power millimeter wave vacuum electronic devices for radar applications.  In 1999 she joined the gyrotron team at Communications and Power Industries (formerly Varian) where she continues her work on high-power millimeter wave gyrotron amplifiers and oscillators.  Dr. Blank has received several professional awards, including the 1998 Alan Berman Publication Award at Naval Research Laboratory, the Robert L. Woods Award for Excellence Vacuum Electronics Technology in 1999, and an R&D 100 Award in 2015.  Dr. Blank has previously served several terms on IEEE Plasma Science and Applications Executive Committee, one term on the IEEE Nuclear and Plasma Sciences Society Administrative Committee, and was a Senior Editor for the IEEE Transactions on Plasma Science from 2009 – 2015.

Fabrizio Bonani received the Master (summa cum laude) and PhD degrees from Politecnico di Torino, Italy, in 1992 and 1995, respectively. Currently, he is Full Professor of Electronics at the Department of Electronics and Telecommunications of Politecnico di Torino. His research interests are mainly devoted to the physics-based and compact modeling of semiconductor devices for microwave and power applications, with an emphasis on noise and variability simulations, to exploring non-conventional computation paradigms, to the thermal analysis of power circuits and devices, and to the analysis and simulation of nonlinear circuits and dynamical systems. He published more than 200 papers in international journals and peer reviewed international conferences, and he co-authored two books. He served in the Modeling and Simulation committee for the IEEE International Electron Device Meeting (IEDM) for the 2010-2011 term. From 2013 he is a member of the Technical Program Review Committee for the IEEE International Microwave Symposium (IMS). He served as an Associate Editor for the IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems from 2016 to 2022, and, since 2022, he is a member of the Editorial Board of Memories - Materials, Devices, Circuits and Systems.

EunMi Choi received the B.S, M.S., and Ph.D degrees in physics from Ewha Womans University (Seoul, South Korea) in 2000, POSTECH (Pohang, South Korea) in 2002, and Massachusetts Institute of Technology (Cambridge, MA, USA) in 2007, respectively. She was a post-doctoral researcher at Brookhaven National Laboratory (Upton, NY, USA) during 2008 and worked as a tool physicist at Schlumberger Technology Center (Houston, TX, USA) during 2009. Currently, she is an associate professor in the Department of Electrical Engineering at Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea, where she has been a faculty member since 2010. She has led the THz Vacuum Electronics and Applied Electromagnetics (TEE) Laboratory as a principle investigator since then with research focus on the development of high frequency novel vacuum electronic devices. Her main contribution in the field includes high power vacuum electronics development (gyrotrons, TWTs, etc) and its application for remote detection of radioactive materials experimentally, and energy recirculating microfabricated vacuum electronics amplifier source development. Her current research interests span from development of electron beam based high power millimeter and THz sources, ultra compact THz sources at 300 GHz and beyond by means of micro-fabrication techniques, orbital angular momentum (OAM) beams generation for communication system and exotic electromagnetic waves generation, to their possible applications with novel techniques. She serves as a member of the IEEE Vacuum Electronics Technical Committee for the term 2021-2022. She has served many domestic and international conferences including a Co-Chair in the International Vacuum Electronics Conference (IVEC) 2019.

She is a recipient of 2006 IEEE Vacuum Electronics Conference (IVEC) & IVESC Best Student Paper Award. She received a Young Investigator Award in the Korean Institute of Electromagnetic Engineering and Science (KIEES) and a recipient of UNIST Rising-Star Distinguished Professor (2017-2020) at UNIST. In 2018, her research work was selected as Top 100 national R&D achievements in Korea. She received a national service merit medal from Korea Government in 2018.

Sukwon Choi is an Associate Professor of Mechanical Engineering with the Pennsylvania State University, University Park, PA, USA. His current research interests include the thermal characterization and electro-thermal co-design of ultra-wide bandgap semiconductor devices and piezoelectric microelectromechanical systems (MEMS), thermal management of microelectronics, and semiconductor device reliability. He received the B.S. and M.S. degrees in mechanical engineering (2005) and automotive engineering (2007), respectively, from Hanyang University, Seoul, Korea. He was a Research Staff with GS FuelCell Co., Ltd., Seoul, Korea in 2007. He received the Ph.D. degree in mechanical engineering from the Georgia Institute of Technology, Atlanta, GA, USA in 2013. From 2013 to 2015, he was a Post-Doctoral Appointee with the RF/Optoelectronics Department of Sandia National Laboratories, Albuquerque, NM, USA. He has been with the Pennsylvania State University, University Park, PA, USA since 2015. He received the NNSA Defense Programs Awards of Excellence in 2014 and the AFOSR Young Investigator Program Award in 2016. He was awarded the Kenneth K. and Olivia J. Kuo Early Career Professorship in 2018.

John F. Conley, Jr. received the B.S. in Electrical Engineering (1991) and a Ph.D. in Engineering Science and Mechanics (1995) from The Pennsylvania State University where he won a Xerox award for his PhD dissertation. Since 2007, Dr. Conley is a Professor of both Electrical Engineering and Computer Science and Materials Science at Oregon State University where he is the Director of the Materials Synthesis and Characterization (MASC) facility. He has also engaged as a technical consultant and expert witness. Previously, he was a senior member of the technical staff at both Dynamics Research Corporation and the NASA Jet Propulsion Laboratory, the Leader of the Novel Materials and Devices Group at Sharp Laboratories of America, and an adjunct professor at Washington State University.

He has served on the technical and organizing committees of numerous IEEE (IRPS, IRW, SOI, IEDM, NSREC, Nano, MRQW), AVS, and MRS meetings; as Program Chair of the AVS International Conference on Atomic Layer Deposition (ALD) and IEEE IRW; and multiple times as guest editor for IEEE T-DMR.

Dr. Conley's current research interests include atomic layer deposition (ALD) development of novel materials for application in metal/insulator/metal devices (MIM & MIIM tunnel diodes), MIM high-κ capacitors, and RRAM) and amorphous oxide semiconductor thin film transistors (TFTs), internal photoemission (IPE), nanomaterials, and sensors.

Dr. Conley has authored or co-authored over 150 journal and/or conference papers; over 160 additional conference presentations (including two tutorial short courses and more than 20 invited talks at international conferences); more than 40 invited talks at universities, government labs, and companies; and 20 U.S. patents.

He is a Fellow of the IEEE, the American Vacuum Society (AVS), and the Oregon Nanoscience and Microtechnologies Institute (ONAMI).

Nicola Donato (M’11–SM’18) received the M.S. degree in Electronic Engineering from the University of Messina, Messina, Italy, and the Ph.D. degree from the University of Palermo, Palermo, Italy. He is currently Associate Professor of Electrical and Electronic Measurements and the head of the laboratories of “Electronics for Sensors and for Systems of Transduction” and of “Electrical and Electronic Measurements” at University of Messina. In 2013 he has been awarded a grant by Samsung SAIT Global Research Outreach program for the project “Smart sensors for breath analysis”. He is AdCom Appointee by Instrumentation and Measurement Society at the IEEE Sensor Council. He has co-authored more than 170 papers on international journals and conference proceedings (Scopus). His current research interests include the development, characterization and modelling of sensors, development of measurement systems for sensors, characterization of electronic devices up to microwave range and down to cryogenic temperatures.

Jinjun Feng (M’94–SM’06) received the bachelor’s degree from Tsinghua University, Beijing, China, in 1988, and the master’s and Ph.D. degrees from the Beijing Vacuum Electronics Research Institute (BVERI), in 1990 and 2001, respectively. Since 1990, he has been with BVERI and has been involved with research and development of millimeter-wave space TWTs, high frequency devices using microfabrication, gyrotrons, field emission devices, and cesium tubes, where he is currently the Vice Director-General.

Dr. Feng has been a member of IEEE Electron Devices Society (EDS) Vacuum Electronics Technical Committee since 2010. He was the Chair of the IEEE EDS Beijing Chapter from 2011 to 2012 and the Chair of IEEE Beijing Section from 2014 to 2015, and has been the Chair of the IEEE China Council since 2016. He was a TPC Chair of the 16^th International Vacuum Electronics Conference, in Beijing in 2015. He was a TPC Co-Chair of the 8th U.K., Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT), Cardiff, U.K., in 2015, and a General Co-Chair of the 9th UCMMT, Tsingdao, China, in 2016. He delivers many plenary talks and session invited speech in the Conferences on vacuum electronics and millimeter wave technologies. He has published over 300 papers in Journals and Conference proceedings.

He is a fellow of Chinese Institute of Electronics (CIE), China, and a fellow of the IET, U.K.

Dr. Samuel Graham, Jr. is the Eugene C. Gwaltney, Jr. Professor in the Woodruff School of Mechanical at the at the Georgia Institute of Technology.  He holds a joint appointment with the National Renewable Energy Laboratory.  His current research centers on the development of electronics made from wide bangdap semiconductors (III-V, oxides) and organic electronics for a range of applications including displays, rf communications, power switches, neuromorphic computing, and flexible electronics.  His research in the area of wide bandgap semiconductors addresses the engineering of the thermal response of the devices in order to enhance heat dissipation and improve device reliability.  Key aspects of this work include thermal metrology of devices, understanding electrothermal phenomena, measuring thermal properties, and developing the understanding to create interfaces within the devices to control thermal transport.  For neuromorphic devices, he is creating physics-based models and experimental tools to design the electro-thermal-ionic transport response that controls the set/reset behavior. 

From 1999 to 2003, Dr. Graham was a Sr. Member of Technical Staff at Sandia National Laboratory in Livermore, CA where he worked on the development of optical coatings for EUV lithography systems.  In 2003, he joined the Woodruff school of Mechanical Engineering at the Georgia Institute of Technology as an Assistant Professor.  He was promoted to Professor in 2013 and is now the Eugene C. Gwaltney, Jr. Professor and School chair.    He holds a B.S. in Mechanical Engineering from Florida State University (1993) and a Ph.D. in Mechanical Engineering (1999) from the Georgia Institute of Technology. Dr. Graham was a member of the Defense Science Study Group (2014-16) and is a member of the Review Board of the Engineering Science Research Foundation of Sandia National Laboratory and the Emerging Technologies Technical Advisory Group for the US Department of Commerce.

Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.

 

Lecture Titles

-Thin-fi lm transistor for Flexible Heterogeneous Integration

-Organic thin-fi lm Transistor for Display and Sensor Integration

-Low power Flexible Hybrid Integration for IoT

-Active-Matrix Backplane Design and Integration for Advanced Displays

Mengyuan Hua received her B.S. degree from Tsinghua University, Beijing, China in 2013, and PhD degree from the Hong Kong University of Science and Technology, Hong Kong in 2017. Dr. Hua joined Southern University of Science and Technology (SUSTech) in 2018, where she is currently an assistant professor in the Department of Electrical and Electronic Engineering. Mengyuan Hua’s research activities have been devoted to wide-bandgap (WBG) semiconductors and devices, with emphasis on GaN-based power device engineering and ICs, and on device reliability and stability. On these topics, she authored or co-authored over 90 publications in international journals (among which more than 25 IEEE-TED/EDL/TPE papers) and conference proceedings. Her work also produced 6 patents. She received the Charitat Award at the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) in 2017. In 2020, she received the Best Young Scholar Paper Award at the IEEE International Conference on Solid-State and Integrated Circuit Technology.

Karol Kalna received M.Sc. degree (Hons.) in Solid State Physics in 1990 and Ph.D. degree in Condensed Matter Physics in 1998 from Comenius University, Bratislava, Czechoslovakia. In 1994, he joined Institute of Electrical Engineering, Bratislava, Slovakia, as a Research Scientist. He was a visiting postgraduate student in the Department of Physics, UIA University of Antwerp, Belgium, in 1994 and 1997, working on semiconductor lasers modelling. From 1999 till 2010, he was in the Department of Electronics & Electrical Engineering, University of Glasgow, U. K., where he was studying the scaling of high electron mobility transistor (HEMT) into sub-100 nm dimensions performing DC and RF analysis within ensemble Monte Carlo simulations. From 2002, he pioneered III-V MOSFETs for future digital technology studying transistor scaling with Monte Carlo simulations. From 2007 till 2012, he was an Engineering and Physical Sciences Research Council (EPSRC) Advanced Research Fellow carrying out the Monte Carlo modelling of deep sub-100 nm, ultra-thin body transistors with Si and high mobility materials in a channel. He was involved in several research projects on III-V MOSFETs for digital applications funded by ESPRC and European Community (DualLogic). In 2010, he became a Senior Lecturer and, in 2013, Associated Professor in College of Engineering, Swansea University, Wales, U. K., establishing his own Nanoelectronic Devices Computational Group. He has more than 200 publications including 81 papers in peer-review journals, 3 book chapters and more than 20 invited talks. He is a Senior Member of the IEEE. His research interests include finite element 2D and 3D Monte Carlo simulations of nanoscaled MOSFETs including FinFETs and gate-all-around nanowires with a channel based on Si, strain Si, and III-V semiconductors; quantum transport simulations using Non-Equilibrium Green's Functions; multiscale modelling coupling density functional theory calculations with Monte Carlo simulations; and simulations of GaN based HEMTs and ZnO nanowires.

Dr. Brajesh Kumar Kaushik (S’07–M’09–SM’13) received his Ph.D. degree in 2007 from Indian Institute of Technology Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; and since April 2014 he has been working as an Associate Professor. He has authored and reviewed several research publications in renowned journals, national and international conferences. He is a Senior Member of IEEE and holds the position of Editor and Editor-in-Chief of various journals in the field of VLSI and microelectronics. He has received many awards for his significant contribution to the scientific community. His research interests include spintronics-based devices and circuits, high-speed interconnects low-power VLSI design, memory design, carbon nanotube-based designs, organic electronics, FinFET device circuit co-design.

 

Lecture Topics

- Spintronics based Quantum Computing Architecture

- Neuromorphic Computing Using Non-volatile Memory

- Graphene based Interconnect Modelling

- Spintronics-Perspectives and Challenges

- Modeling and Application of FinFET

Tae-Hun Kim was born in Korea in 1973. He is a principal engineer working on Flash memory development at Semiconductor R&D Center, Samsung Electronics. He received B.S. and M.S. degree from School of Electrical Engineering, Seoul National University, Seoul, Korea, in 1999 and 2001, respectively. He received Ph.D. degree at the same university in 2006. In 2006, he joined Samsung Electronics Co., Hwasung, Korea, where he has been engaged in the development of NAND flash memories. During the developments of planar NAND flash down to 1x nm technology node, his main focus was on the device design, process development, failure analysis, and chip operation development. He has been working on the device development of 3 dimensional NAND flash since 2011 when he joined the project developing 2nd generation 3 dimensional NAND Flash. Currently he is working on the product development of next generation 3 dimensional NAND and his interests are the design of 3 dimensional NAND cell transistor and new scheme of the device for the future NAND.

Dr. Woo Soo Kim is an Associate Professor at the School of Mechatronic Systems Engineering in Simon Fraser University (SFU), located in British Columbia Canada. He was selected in 2017 as a Brain Pool Fellow for his sabbatical visit at Seoul National University in Korea and stayed at Swiss Federal Laboratories of Materials Science and Testing, Empa in ETH Domain as a visiting professor in 2018. Prior to joining SFU, he was a Senior Research Scientist in Xerox Corporation (XRCC) for two years after the period of a Post-doctoral Research Associate in Massachusetts Institute of Technology (MIT) for two and half years. He received BSc degree from Yonsei University in 2001 and MSc and PhD degrees from Korea Advanced Institute of Science and Technology (KAIST). He was the winner of Quadrant Award 2007. And he received Hanwha Corporation’s New Faculty Award in 2016. His research interest is broad in the field of Additive Manufacturing for flexible electronic applications. He has published widely about 100 publications including journal papers, conference proceedings, and US patents. www.sfu.ca/~woosook

Tsunenobu Kimoto received the B.E. and M.E. degrees in Electrical Engineering from Kyoto University, Japan, in 1986 and 1988, respectively. He joined Sumitomo Electric Industries, LTD in 1988. In 1990, he started his academic career as an Assistant Professor at Kyoto University, and received the Ph.D. degree from Kyoto University in 1996, based on his work on silicon carbide (SiC). From 1996 to 1997, he was a visiting scientist at Linköping University, Sweden, and since 2006 he has been a Professor at Department of Electronic Science and Engineering, Kyoto University.

His main research activity includes SiC (growth, characterization, process technology (MOS, ion implantation, etc.), power devices, and high-temperature devices), nano-scale Si and Ge devices, and oxide materials for resistive switching memories. He is a Fellow of IEEE and JSAP.

Ioannis (John) Kymissis is an electrical engineer teaching at Columbia University. His area of specialization is solid state electronics and device fabrication, with an emphasis on thin film devices and the use of organic semiconductors in his work. He graduated with his SB, M.Eng., and Ph.D. degrees from MIT, and after working as a post-doc and at QDVison, joined the faculty at Columbia University in 2006. John has won a number of awards for his work, including the NSF CAREER award, the IEEE EDS Paul Rappaport award, the Vodaphone Americas Foundation Wireless Innovation Award, and the MIT Clean Energy Prize. He is currently serving as the editor-in-chief of the Journal of the Society for Information Display and is the general chair for the 2013 Device Research Conference.

 

Lecture Topics

- Organic semiconductors, single chip sensors, flexible electronics, micro-LEDs

 

 

Rosa Letizia received  the  Laurea  degree  in  Electronic  Engineering from the Polytechnic of Bari, Bari, Italy, and the Ph.D. degree in computational photonics from the University of Leeds, Leeds, U.K., in 2005 and 2009, respectively. In 2011, she joined the Engineering Department, LancasterUniversity, Lancaster, U.K., and the Cockcroft Institute of Accelerator Science and Technology, Warrington, U.K., where she has been a Senior Lecturer since 2019. Her research focuses on the design, fabrication and test of electromagnetic structures for the design of millimeter wave and THz vacuum electron devices and high frequency particle acceleration. Her expertise includes the development of computational modelling of complex electromagnetic structures from the millimetre-wave to the optical frequency range of the spectrum. She has published in excess of 90 peer-rewieved international journal and conference papers. In 2019, she was the recipient of the Senior Research Fellowship from The Leverhulme Trust and Royal Academy of Engineering. She has served as member of the Technical Committee for the U.K., Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT) from 2013 to 2015 and the International Vacuum Electronic Conference (IVEC) in 2017. She is an IEEE Senior Member and serves as an associate editor for the IEEE Transactions on Electron Devices.

Javier Mateos (M’09) was born in Salamanca, Spain, in 1970. He received the B.S. and Ph.D. degrees in physics from the University of Salamanca in 1993 and 1997, respectively. Since 1993, he has been with the Department of Applied Physics of the University of Salamanca, becoming Full Professor in 2017. He was coordinator of EU project ROOTHz aiming at fabricating THz emitters and detectors using semiconductor nanodevices. In addition to THz devices, his present research interests also include the development of novel device concepts using ballistic transport and HEMTs based in both narrow and wide bandgap III–V semiconductors. He is author or co-author of more than 120 indexed journal papers and 200 conference contributions.

Matteo Meneghini received his PhD in Electronic and Telecommunication Engineering (University of Padova), working on the optimization of GaN-based LED and laser structures. He is now associate professor at the Department of Information Engineering at the University of Padova. His main interest is the characterization, reliability and modeling of compound semiconductor devices (LEDs, laser diodes, high electron mobility transistors), electronic and optoelectronic components, solar cells. Within these activities, he has published more than 400 journal and conference proceedings papers. He has given invited and tutorial talks to several conferences, including IEEE-International Electron Device Meeting (IEDM), IEEE-International Reliability Physics Symposium (IRPS), International Workshop on Nitride Semiconductors (IWN), International Conference on Nitride Semiconductors (ICNS), Photonics West. He is/has been sub-committee member for relevant conferences in the field of electronics (IEEE-IEDM, IEEE-IRPS, ESREF, IWN, ESSDERC) and sub-committee chair for IEEE-IRPS and ESREF.

Pritish Narayanan received the BE(Hons) and MSc(Hons) degrees from the Birla Institute of Technology and Science (BITS), Pilani, India, and his PhD in Electrical and Computer Engineering from the Univeristy of Massachusetts Amherst. He joined IBM Research – Almaden as a Research Staff Member in 2013 as part of the Storage Class Memory project, where he investigated device and circuit design challenges for access devices used in 3D crosspoint memory. His current research interests are in the area of ultra-high-performance hardware systems for Artificial Intelligence. His work focuses on novel non-Von Neumann architectures based on emerging non-volatile memory, and he is the lead circuit architect for several deep learning test sites based on Phase Change Memory (PCM) and mixed-signal hardware.

 

Dr. Narayanan has presented two keynotes (International Memory Workshop 2017, Cool Chips 2018) and a tutorial session (Device Research Conference 2017), in addition to several invited talks. He won Best Paper Awards at IEEE Computer Society Symposium on VLSI 2008 and at Nanoarch 2013. He has also been a Guest Editor for the Journal of Emerging Technologies in Computing, the Program Chair at IEEE Nanoarch 2015, Special Session Chair for IEEE Nano 2016 and served on the Technical Program Committees of several conferences.

 

Dr Nguyen received his PhD from the Australian National University (ANU) in 2016. In 2017, he was a visiting scientist at the United States' National Renewable Energy Laboratory (NREL). Currently, he is a senior research fellow and senior lecturer at the ANU, leading his research team. The central idea of Dr Nguyen’s research is to advance solar energy technologies through knowledge and scientific discoveries and technological inventions. His research spans from the fundamental to the applied. His team explores the fundamental properties of light-matter interactions in solar energy materials and devices under various conditions. His team works to uncover the relationship between absorbed/emitted light and important properties of the materials and devices, including optical, electrical, chemical, and structural properties. By exploiting these phenomena, the team develops novel device concepts, advanced characterization techniques, and defect engineering routes with applications to renewable energy and material science. Many of his techniques have been being used by various research groups in the world.

Lucio Pancheri received the M.Sc. degree (summa cum laude) in Materials Engineering and the Ph.D. in Information and Communication Technologies from the University of Trento, Italy, in 2002 and 2006, respectively. From 2006 to 2012 he has been a research scientist at Fondazione Bruno Kessler (FBK), Italy, within the Integrated Radiation and Image Sensors (IRIS) research unit. In 2012 he joined the Department of Industrial Engineering at the University of Trento where he is currently Associate Professor of Electronics. His research activity has been mainly directed towards the development of CMOS integrated Single Photon Avalanche Diodes and image sensors for Time-of-Flight ranging and scientific imaging. His research interests also include radiation and charged-particle imaging detectors for high-energy physics, medical and space applications, hybrid organic-CMOS photodetectors and gas sensors. He has authored or co-authored more than 140 papers in international journals and in the proceedings of international conferences.

Jin-Seong Park received the B. S. degree from the Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea, in 1997, and the M. S. degree and Ph. D. degree in Plasma Enhanced Atomic Layer Deposition from KAIST in 1999 and 2002, respectively. From 2003 to 2005, he was a post-doctor in Chemistry and Chemical Biology, Harvard University, Cambridge, USA. Then, he started to work as a senior researcher to develop Advanced Thin Film Transistor such based on organic semiconductor and amorphous oxide semiconductor for (flexible) active matrix organic light emitting display (AMOLED) in Samsung SDI (2005-2009) and Samsung Mobile Display (2008-2009, Before Samsung Display), respectively. From 2009 to 2013, he was an Assistant Professor with the Department of Materials Science and Engineering, Dankook University, Cheonan, Republic of Korea. Since March 1, 2013, he has been with the Division of Material Science and Engineering, Hanyang University, Seoul, Republic of Korea, where he was first an Associated Professor and is currently a full-tenured professor. His main research interests include the development of the functional thin film (such as Atomic Layer Deposition) and devices for flexible / transparent / wearable electronics. He is also interested in the development of high-mobility semiconductors, and in the atmosphere pressure process for next-generation electronics (Semiconductor & Display Industry). Dr. Park is a member of Korean Information Display Society, Society of Information Display, Material Research Society of Korea and so on. he has been served as an Executive committee in Thin Film Division of American Vacuum Society as well as International Atomic Layer Deposition Conference.

Marcelo Antonio Pavanello (S´99-M´02-SM´05) received the Electrical Engineering degree from FEI University in 1993, receiving the award “Instituto de Engenharia” given for the best student among all the modalities of engineering programs offered at FEI. He received the M. Sc. and Ph. D. degrees in 1996 and 2000, respectively, in Electrical Engineering (Microelectronics) from University of São Paulo, Brazil. From August to December 1998 he was with Laboratoire de Microélectronique from Université Catholique de Louvain (UCL), Belgium, working in the fabrication and electrical characterization of novel channel-engineered Silicon-On-Insulator (SOI) transistors. From 2000 to 2002 he was with the Center of Semiconductor Components and Nanotechnologies, State University of Campinas, Brazil, where he worked as a post-doctoral researcher in the development of a CMOS n-well process. Since 2003 he joined FEI University where he is now Full Professor at Electrical Engineering Department. In 2008 he has been with UCL as a visiting professor. Dr. Pavanello is Senior member of The IEEE and Brazilian Microelectronics Society. He is also Research Associate to the National Council for Scientific Development (CNPq), Brazil. Since 2007 he serves as IEEE Electron Devices Society (EDS) Distinguished Lecturer and has been nominated to the Compact Modeling Technical Committee of EDS in 2018. He is author and co-author of more than 300 technical papers in peer-reviewed journals and conferences, and author/editor of 6 books. Dr. Pavanello coordinates several research projects fomented by Brazilian agencies like FAPESP, CNPq and Capes. He also supervised several Ph. D. dissertations, M. Sc. thesis and undergraduate projects in Electrical Engineering. His current interests are the compact modeling, fabrication, electrical characterization and simulation of SOI CMOS transistors with multiple gate configurations and silicon nanowires; the wide temperature range of operation of semiconductor devices; the digital and analog operation of novel channel-engineered SOI devices and circuits.

 

Lecture Topics:

-Junctionless Nanowire Transistors: Electrical Characteristics and Compact Modeling;
-Physics and Electrical Characterization of Multiple-Gate Transistors (Nanowires and FInFETs) in a Wide Temperature Range of Operation;
-Impact of Channel Engineering on SOI Devices and Circuits;
-Operation and Modeling of Silicon-On-Insulator MOSFETs in Cryogenic Environments.

Jamie Phillips is currently Professor and Chair of the ECE Department at the University of Delaware. He received his B.S., M.S. and Ph.D. degrees in Electrical Engineering at the University of Michigan. He was a postdoctoral researcher at Sandia National Labs from 1998-1999 and research scientist at the Rockwell Science Center from 1999-2001 before returning to the University of Michigan as a faculty member in 2002. At the University of Michigan, he was an Arthur F. Thurnau Professor in the EECS Department prior to joining the University of Delaware in 2020. His expertise is in the growth, characterization, and device applications of compound semiconductor and oxide-based materials for optoelectronics and electronics where he has published more than 130 peer-reviewed journal articles. Prof. Phillips received an NSF CAREER award, DARPA MTO Young Faculty Award, IEEE Paul Rappaport Best Paper Award, and IEEE Theodore E. Batchman Best Paper Award.

Sarita Prasad received her Associate’s degree in Electrical Engineering in 1999 from Niihama National College of Technology under the Japanese Government Scholarship. She received her B.S degree and M.S degrees from Nagaoka University of Technology in 2001 and 2003, respectively. She joined University of New Mexico (UNM) in 2003 and acquired her Ph.D. degree in Electrical Engineering in 2010. Her Ph.D. thesis work was on “Fast Start of Oscillations in a Short Pulse Magnetron Driven by a Transparent Cathode”. Dr. Prasad specializes in conducting both simulations and experimental demonstration of relativistic High Power Microwave (HPM) Devices which include relativistic magnetrons, backward wave oscillators, virtual cathode oscillators and metamaterials for HPM generation. Upon receiving her doctorate degree she worked at UNM as a Research Assistant Professor. During her tenureship she managed the Pulsed Power, Beams and Microwaves Laboratory at the Department of Electrical and Computer Engineering. She was the recipient of two DURIP (Defense University Research Instrumentation) awards and the AFOSR (Air Force Office of Scientific Research) award on “Pushing the Frontiers of Relativistic Magnetrons”. In 2016 she was hired as a Physicist by Raytheon to serve as a Test Lead on the trouble-shooting and experimental validation of a critical HPM system for which she received recognition for her outstanding contributions. She also aided other HPM-related experimental work and was the recipient of an IRAD (Internal Research and Development) award. In August, 2018 she joined Sandia National Laboratories (SNL) as a Senior RF and Sensor Engineer where she designed two complete HPM systems. She was the recipient of the SNL LDRD (Lab Directed Research and Development) award on “Phase-locking of a High Power Magnetron with a Low Amplitude Injected Signal”. Currently she is the President and CEO of IMS-Pro, LLC (Innovative Microwave System Prototypes) which she established in January, 2020 with the aim of commercializing the HPM technology. She also holds a LAT (Letter of Academic Title) at UNM as a Research Associate Professor. To date she has published over 75 conference papers and presentations. She has been a member of IEEE for 19 years. In 2015 she served as the TPS Guest Editor for Special Issues on “Atmospheric Plasmas and Applications”. She was the Technical Area Chair for “Microwaves and Plasma Interactions” for the ICOPS (International Conference on Plasma Science) Conference in 2017. She is the Treasurer for ICOPS 2023.

Wataru Saito received the B.S., M.S., and Ph.D. degrees in electrical and electronics engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1994, 1996, and 1999, simultaneously. He joined Discrete Semiconductor Division, Toshiba Corporation Semiconductor Company, Kawasaki, Japan, in 1999, where he has been engaged in the development of power semiconductor devices. Since 2019, he is currently a Professor with Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan.

Kuang Sheng received the B.Sc. degree from Zhejiang University, Hangzhou, China, in 1995, and the Ph.D. degree from Heriot-Watt University, Edinburgh, U.K., in 1999. He has worked in Cambridge University and was a tenured associate professor in Rutgers University. He is currently a distinguished professor and the Dean of the Electrical Engineering College in Zhejiang University, China. He has worked on IGBT modeling, SiC super-junction devices and, in general, all aspects of SiC and GaN power devices and modules. He has published over 300 papers in academic journals and conferences. He holds 50 patents in power semiconductor devices and ICs. He was the Technical Program Chair of ISPSD 2015, the General Chair of ISPSD 2019 and is an AdCom member of the ISPSD.

Prof. Mayank Shrivastava is a faculty member at the Indian Institute of Science, Bangalore, and co-founder of AGNIT Semiconductors Pvt. Ltd. He received his Ph.D. degree from the Indian Institute of Technology Bombay (2010). For his PhD work, he received Excellence in Research award and the Industrial Impact award from IIT Bombay in 2010. He is among the first recipients of the Indian section of the American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). He is the recipient of prestigious DST Swarnjayanti Fellowship (2021), Abdul Kalam Technology Innovation National Fellowship from INAE-SERB (2021) and VASVIK award (2021). He has received several other national awards and honours of high repute, like the National Academy of Sciences, India, (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award - 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award - 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Ministry of Electronics & Information Technology (MeitY), Young Faculty Fellowship. Besides, he received best paper awards from several international conferences like Intel Corporation Asia academic forum, VLSI design Conference and EOSESD Symposium. Prof Shrivastava broadly works on applications of emerging materials like Gallium Nitride (GaN), atomically thin two-dimensional materials like Graphene and TMDCs, in electronic and electro-optic devices working closer to its fundamental limits (like the ability to handle extreme powers, ability to work at THz like ultra-high frequencies, or ability to compute information in unconventional ways). Currently, his group is developing few-atom thick devices & circuits, GaN-based ultra-high-power devices with high reliability, and devices/circuits for operation at THz frequencies. Besides, his group also works on developing novel ESD and High Voltage devices in advanced CMOS nodes. He had held visiting positions in Infineon Technologies, Munich, Germany, from April 2008 to October 2008 and again in May 2010 to July 2010. He worked for Infineon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; Intel Corp, Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined the Indian Institute of Science as a faculty member in the year 2013. Prof Shrivastava’s work has resulted in over 180 peer-reviewed publications and 50 patents. Most of these patents are either licensed by semiconductor companies or are in use in their products.

 

Lecture Title

-Atomic Orbital Overlap Engineering for 3D-2D Contacts & Record High-Performance 2D Transistors

Paragkumar A. Thadesar received the B.E. degree in electronics and communication engineering with a gold medal from V.V.P. Engineering College, Rajkot, Gujarat, in 2009, and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology, Atlanta, GA, USA, in 2011 and 2015, respectively. His Ph.D. research was focused on electrical design, fabrication and high-frequency characterization of through-silicon vias (TSVs) and radio-frequency (RF) platforms for 2.5-dimensional integration using silicon interposers. Dr. Thadesar is an RF front-end IC/module design engineer at Qualcomm, San Diego, since 2015. His research interests include interconnects, advanced packaging and radio-frequency integrated circuits. Dr. Thadesar received the IBM Ph.D. Fellowship Award from 2014 to 2015, the Outstanding Interactive Presentation Paper Award at the IEEE Electronic Components and Technology Conference in 2013, a Best-in-Session Award at Semiconductor Research Corporation TECHCON, Austin, TX, USA, in 2013, the third place Microelectronics Foundation Prize at IMAPS Device Packaging, Fountain Hills, AZ, USA, in 2013, and the best student paper awards at the Global Interposer Technology Workshop in 2011 and 2012. Dr. Thadesar is an Associate Editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology and the chapter chair for the IEEE San Diego Electronics Packaging Society (EPS) chapter.

 

Yukiharu Uraoka was born in Tokushima, Japan, in 1961. He received the B.S., M.S and Ph.D. degrees in electrical and electronics engineering from Toyohashi University of Technology, Aichi, Japan, in 1983,1985 and 1994, respectively.

In 1985, he joined Panasonic Company, Ltd., Osaka, Japan, where he has been engaged in the research of the reliability of CMOS devices and low temperature poly-Si display devices. Since 2009, he has been a Professor of the Graduate School of Material Science, Nara Institute of Science and Technology, Nara, Japan. His current research interest involves the fabrication of thin film devices using Si film, metal oxide film for flexible device. He is also interested in memory or LSI for AI (Artificial Intelligence). He is a fellow of The Japan Society Applied Physics (JSAP). Senior member of IEEE.

Kejun Xia (Senior Member, IEEE) received the Ph.D. degree in Electrical Engineering from Auburn University, Auburn, AL, USA in 2006 and the MBA degree from Arizona State University, Phoenix, AZ, USA in 2022. He started his career in semiconductor at Maxim Integrated, Beaverton, OR, USA in 2006, where he later served as a Senior Principal Member of Technical Staff leading the modeling activities for the advanced BCD & SiGe BiCMOS technologies. From 2014 to 2015, he was with the Analog & Sensor BU at Freescale Semiconductor as a modeling manager, where he expanded his experience to automotive BCD technologies. From 2016 to 2021, he was with NXP semiconductors first as a manager for device modeling and later as a director responsible for HV and analog technology development. Currently, he is working in the product engineering division in TSMC as a deputy director, expanding his experience to GaN, HV display, RF CMOS, CIS, MEMS, Silicon photonics as well as the advanced logic technologies.

Dr. Xia’s research interests include device physics, process, product yield, compact modeling, model and its interaction with analog circuits. He has published many technical papers in renowned journals and conferences. He had been a member of IEEE compact modeling committee. He has been a frequent reviewer for IEEE Transactions on Electron Devices, IEEE Electron Device Letters, and Solid-state electronics. He had been on the technical program committees for the IEEE EDTM conference. Currently he is an editor of IEEE Transactions on Electron Devices. 

Nuo Xu received the B.Sc. degree in Microelectronics from Peking University, China in 2008, M.S. and Ph.D. degrees both in Electrical Engineering from the University of California, Berkeley in 2010, and 2012, separately. His Ph.D. thesis was about Strain-Si Thin-body Transistor Technologies. He has been with Synopsys in 2010 and imec in 2011 for temporary positions. He became a post-doctoral scholar and lecturer in EE of UC Berkeley in 2012, researching on 3D integration of emerging logic and memory devices and design-technology co-optimization (DTCO). He joined Samsung America Headquarters, Device Solutions (AHQ-DS) in 2014, as a senior staff research scientist, working on emerging non-volatile memories (NVM), DTCO and EDA/CAD algorithm development. He joined TSMC North America in 2019, as a R&D manager, focusing on developing leading-edge NVM technologies, compact modeling and EDA/CAD methodologies. He has published over 100 technical papers on peer-reviewed journals and conferences (including 12 IEDM/VLSI papers as the first author); and applied/been granted for over 10 US patents. He is a member of the IEEE Electron Devices Society (EDS) Technical Committee on Technology CAD, and served as the sub-committee chair (2020) and members (2018-19) of IEEE IEDM Modeling and Simulation sessions. He was a recipient of IEEE EDS Student Fellowship (2010), TSMC Academia Award for Outstanding Student (2012), and Samsung AHQ-DS President Award (2019).

Chen Yang received his B. S. degree and Ph.D. degree in Electronic Science and Technology from Tsinghua University, Beijing, China, in 2003 and 2008, respectively. He was a Postdoctoral Researcher at University of California at Berkeley from 2009 to 2010. Then he joined Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, as an Associate Professor. From 2013 to 2016, he worked as an Assistant Project Scientist at the Berkeley Sensors and Actuators Center (BSAC), University of California at Berkeley. Since 2016, he is with Analog Devices, Inc. in advanced MEMS development team. His research interests include MEMS physical and biological sensors, energy storage devices, RF passive devices and nano-materials. Dr. Yang was the recipients of the IEEE Electron Devices Society (EDS) Early Career Award in 2010, and the IEEE ElectronDevices Society Ph.D. Student Fellowship Award in 2007. He has been serving as TPC member of IEEE RFIC Symposium since 2012. He served as the vice chair of IEEE EDS Regions 4-6 SRC and member of the EDS Membership Committee. He was the tutorial chair of 2009 Silver Jubilee Conference on Communication Technologies and VLSI Design (CommV) at Vellore, Tamil Nadu, India, the secretary of the 3rd Japan-China-Korea Joint Conference on MEMS/NEMS (JCK MEMS/NEMS 2012) at Shanghai, China, and the secretary of 2007 International Workshop on Electron Devices and Semiconductor Technology (IEDST 2007) at Beijing, China. He was the founding Chair of IEEE Electron Devices Society Tsinghua University Student Branch Chapter at Beijing, China.

Dr. Jing Zhang is currently an Associate Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet (UV) and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics. Specifically, her work has focused on high-efficiency micro-LEDs, vertical III-Nitride nanowire transistors for monolithic integration, UV and DUV LEDs and lasers, and nanowire optoelectronics. For synergistic activities, she has served as the member of IEEE EDS Optoelectronic Devices Technical Committee, CLEO (Conference on Lasers and Electro-Optics) technical sub committee on Semiconductor Lasers, and IEEE Photonics Conference Technical Commitee for Light Sources. Dr. Zhang has published more than 40 refereed journal papers and 70 conference proceedings including invited talks. She is a recipient of Texas Instruments/Douglass Harvey Faculty Development Award, and National Science Foundation (NSF) CAREER Award.