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- Table of Contents
- IEEE ELECTRON DEVICES SOCIETY
- Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node
- Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects
- Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era
- Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs
- Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs
- A Passive Hybrid Circuit Model for Electrostatic Discharge (ESD) Characterization
- Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters
- Determining the Performance Limits of LDMOS With Three Common Types of Field Oxides
- Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
- Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET
- Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology
- Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift
- Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress
- Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode
- Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer
- Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance
- A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices
- FeFET-Based MirrorBit Cell for High-Density NVM Storage
- A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories
- Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage
- A New High Density 3D Stackable Via RRAM for Computing-in-Memory SOC Applications
- Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor
- Laminated Ferroelectric FET With Large Memory Window and High Reliability
- Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect
- Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration
- Optimizing a-IGZO Source-Gated Transistor Current by Structure Alteration via TCAD Simulation and Experiment
- Impact of AlSnO Back-Channel Layer on the Performance of AlSnO/InSnZnO Heterojunction Thin-Film Transistors
- Vapor-Phase Self-Assembled Monolayer With Functional Groups as a Copper Diffusion Barrier Layer for InSnZnO Thin-Film Transistors
- Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress
- Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors
- Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations
- Analytical Modeling of Epsilon-Near-Zero Effect in Indium Tin Oxide and Its Application as an Optical Modulator
- Light-Emitting Devices Attaining Theoretical Outcoupling Efficiency Exceeding 60% via Scattering Particles
- Noncarrier Injection Mode for Realizing One Line-to-Three LEDs Driving Method
- High Selectivity and Wide Range UV Photodetection in PEDOT:PSS/ Lu₀.₂₇Sn₀.₇₃O/ZnO Heterojunction
- Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics
- Optothermal Performances Investigation of Phosphor-Converted White LDs With Alumina Substrate-Based PiGF Converters
- A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness
- A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS
- Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs
- Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction
- Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences
- Expansion Limitation of Current Channel in Avalanche Transistors Under Voltage Ramp Triggering Conditions
- Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
- Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs
- Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs
- Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications
- Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling
- Combining of Anodic Oxidization With Zn-Ga Diffusion to Fabricate High-Efficiency GaSb Thermophotovoltaic Cells
- Electrothermal Modeling of Multi-Nanosheet FETs With Various Layouts
- Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures
- Ultralow Voltage Floating Film Transferred DPP-DTT-Based Near-Infrared Phototransistor
- Study of a New Hydrogen Sensor Based on the Synthesis of a Sputtered In–Sn–Zn-O Thin Film and Evaporated Palladium Nanoparticles
- A Fast Hierarchical Cascade Technique Simulation Method for Surface Acoustic Wave Devices
- Operating Temperature Dependency of Power Generation Capacity in Silicon Planar-Integrated Microthermoelectric Generators
- Theoretical and Experimental Study of Over-Mode Windows for High-Frequency TWTs
- A Genetically Based Algorithm to Improve Execution Speed in Multipactor Simulations in Parallel-Plate Waveguides
- Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emission Property
- Effect of Electrode Spacing in a Single-Gap Multi-Aperture Pseudospark Switch
- Experimental Investigation of a Ku-Band Coaxial Transit Time Oscillator on Low Magnetic Field Operation
- Dispersion Characteristics From Simplified Dispersion Equation for Open Rectangular Planar Tape Helix
- Study on Multipactor Mechanism in a Two-Sided Dielectric-Loaded Rectangular Waveguide
- Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores
- Design of a 0.23-THz Extended Interaction Klystron With Ridge-Loaded Hughes Structure
- Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition
- DMI Influence on the Integration, Leakage, and Threshold Property of Domain Wall Based Neurons
- Low-Voltage Synaptic Transistors Based on PrOx/ZrO2 Bilayer Dielectric for Neuromorphic Computing
- Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit
- Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM
- In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives
- Self-Powered Photodetector With High Polarization Sensitivity Enabled by Ta2PdS6/MoTe2 Heterojunction
- Enhance the Electrical and Photoelectrical Performance of MoS2 Transistor With Polyimide Gate Dielectric by Microwave Annealing
- Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design
- Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al₂O₃-Based Ion Conducting Electrolyte
- Magnetization Reversal of Magnetic Tunnel Junctions by Low-Current Pulses
- Wafer-Scale, Efficient In2S3-Based Optical Memory Devices for Neuromorphic Computing
- A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method
- Machine Learning-Based Prediction of Antiferromagnetic Skyrmion Formation
- Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors
- UV-Ozone-Assisted Solution-Processed High-k ZrO₂for MoS₂ Field-Effect Transistors
- Ultrafast ~7 Mbps True Random Number Generator Based on SNGCT Selector
- High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure
- Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts
- Concave and Convex Structures for Advanced 3-D NAND Flash Memory Technology
- 3-D Spatial Optical Crosstalk Characterization of Mini-LED Array by Hyperspectral Imaging and Spectrum-Based Ray Tracing
- Experimental Registration of Simultaneous Radiation at the First and Third Cyclotron Harmonics in a High-Current Relativistic Gyrotron
- Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention
- Highly Ordered Bamboo-Like 4H-SiC Nanowire Array Enabling Low Turn-On Field and Excellent Field Emission Stability
- Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability
- TechRxiv: Share Your Preprint Research with the World!
- IEEE Transactions on Electron Devices Information for Authors
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