Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of T-ED. Click an article title to view within IEEE Xplore.
- Table of contents
- IEEE Transactions on Electron Devices publication information
- A New Aspect of Saturation Phenomenon in FinFETs and Its Implication on Analog Circuits
- Hot-Carrier-Induced Degradation and Optimization for Lateral DMOS With Split-STI-Structure in the Drift Region
- Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor With Substrate Bias-Induced Effects
- High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage