T-ED Editor-in-Chief and Editors

  • T-ED Editor-in-Chief

    • Giovanni Ghione
       - Editor-in-Chief
      Giovanni Ghione portrait
      Politecnico di Torino
      Department of Electronics and Telecommunications
      Corso Duca degli Abruzzi 24
      Torino 10129
      Phone 1:
      +39 011 090 4064

      +39 011 090 4099
      Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.

  • T-ED Editors

    • David Abe
       - Vacuum Electron Devices
      David Abe portrait
      Naval Research Laboratory
      4555 Overlook Ave. S.W.
      Washington, DC 20375
      Phone 1:


      David K. Abe (M’88–SM’12) received the B.Sc. degree in engineering from Harvey Mudd College in 1981, M.S. in electrical engineering from the University of California, Davis in 1988, and Ph.D. in electrical engineering/electrophysics from the University of Maryland in 1992. Since 1997, he has been at the U.S. Naval Research Laboratory (NRL), Washington, DC, where he directs a multidisciplinary group of scientists and engineers as head of the Electromagnetics Technology Branch. The Branch carries out research and exploratory development on radio-frequency concepts, materials, devices, components, and circuits in the frequency range of 1 MHz to approximately 1 THz with focused efforts in wide and narrow bandgap semiconductor electronics, carbon-based and other novel lower dimensional electronic materials, tunable and reconfigurable materials and circuits, control components, electron emission physics, electron beam-wave interactions (vacuum electronics), and electromagnetic theory and computational techniques. Dr. Abe’s current research involves the generation of coherent microwave and millimeter-wave radiation resulting from the interaction of axially-streaming electron beams with novel electromagnetic structures, with a particular emphasis on multiple-beam devices. Prior to NRL, Dr. Abe worked on interdisciplinary projects in pulsed power, explosive-driven magnetic flux compression, high power microwave generation, and electromagnetic effects at the Lawrence Livermore National Laboratory, Berkeley Research Associates, and the U.S. Army Research Laboratory (ARL), Adelphi, MD. He was a co-guest editor of the IEEE Transactions on Plasma ScienceTenth Special Issue on High Power Microwave Generation and co-edited the Proceedings of the 7th Workshop on High Energy Density and High Power RF (RF2005). He served as the Technical Chair of the IEEE International Conference on Vacuum Electronics (IVEC) in 2012 and as the General Chair of IVEC 2014. He is a member of the IEEE Electron Devices Society Technical Committee on Vacuum Electronics, was an elected member of the IEEE Nuclear and Plasma Sciences Society (NPSS) Administrative Committee from 2008 to 2011, and served multiple terms as an elected member of the NPSS Plasma Science and Applications Executive Committee (2005–2007, 2008–2011, 2013–2015). He was a recipient of a Thomas J. Watson Fellowship, two NRL Technology Transfer Awards, and numerous official commendations and distinguished contribution awards from the Army and Navy.

    • Khairul Alam
       - Compound Semiconductor Devices
      Khairul  Alam  portrait
      East West University
      A/2 Jahurul Islam Avenue
      Phone 1:

      Khairul Alam is a professor in the department of Electrical and Electronic Engineering at East West University, Dhaka, Bangladesh, where he has been a faculty member since 2007. His research interests lie in the area of physics, modeling, and quantum simulation of nano-scale MOSFETs and tunnel FET of III-V materials, compound semiconductors, heterostructures, and two dimensional materials and emerging semiconductor materials.

      Prof. Alam completed his Ph.D. at the University of California Riverside, USA and his MS and BS studies at Bangladesh University of Engineering and Technology (BUET), Bangladesh. He spent two years at the University of Tokyo, Japan as a post-doctoral research fellow and summer of 2006 at Intel, New York, USA as an intern. He published a book chapter, 34 journal papers and 26 conference papers. He received University Grants Commission award in 2009 for his research on graphene nanoribbon transistor.
      In addition to research, Prof. Alam teaches electronic and optoelectronic courses at the university. He served the director position of institutional quality assurance cell of East West University for three years. During his period, seven departments of East West University completed self-assessment report and external peer review. He served the external peer review team for quality assurance of a few universities in Bangladesh. He is also involved in outcome based education (OBE) and served the accreditation team of Board of Accreditation for Engineering and Technical Education (BAETE) for accreditation of engineering program in Bangladesh.
    • Uygar Avci
       - Memory Devices and Technology
      Uygar Avci portrait
      Intel Corp.
      2501 NW 229th Ave.
      MailStop# RA3-252
      Hillsboro, Oregon 97124
      United States
      Phone 1:

      Uygar E. Avci received double-major BS degrees in Physics and Electrical Engineering from Bogazici University, Istanbul, Turkey in 1999 and was the recipient of the President’s Award. He received his MS and PhD degrees in Applied Physics from Cornell University, Ithaca, NY in 2003 and 2005, respectively. During his doctorate study, he demonstrated the first experimental realization of back-side flash memory.
      He joined Intel’s Components Research in 2005, leading Floating Body Cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has focused on the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He has defined Tunnel-FET device and material options, its scaling roadmap and the road blocks by bridging Physics-based models with experimental material realities. His research includes circuit evaluation of novel devices comprehending the parasitics, interconnect and density to explore their potential for future products. He is currently a Principle Engineer, leading the research for charge-based beyond-CMOS devices and circuits in Intel’s Components Research department.
      Dr. Avci served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference, in 2012 and 2013, respectively. He has ten filed patents and published twenty-nine papers in international conferences and journals.
    • Muhannad Bakir
       - MOS Devices and Technology
      Muhannad Bakir portrait
      Georgia Institute of Technology
      791 Atlantic Dr NW
      Atlanta, GA 30332-0269
      United States
      Phone 1:
      404 385 6276

      404 894 0462
      Muhannad S. Bakir received the B.E.E. degree (summa cum laude) from Auburn University, Auburn, AL, in 1999 and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology (Georgia Tech) in 2000 and 2003, respectively.
      He is currently an Associate Professor and the ON Semiconductor Junior Professor in the School of Electrical and Computer Engineering at Georgia Tech. His areas of interest include three-dimensional (3D) electronic systems, advanced interconnection and packaging, and nanofabrication technology. He is the co-editor (with James D. Meindl) of a book entitled Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Artech House, 2009) and is the author/coauthor of more than 110 journal publications and conference proceedings, 14 US patents, and the presenter of 2 conference tutorials, including an invited tutorial on 3D technology at the 2007 International Solid-State Circuits Conference (ISSCC).
      Dr. Bakir is the recipient of the 2013 Intel Early Career Faculty Honor Award, 2012 DARPA Young Faculty Award, 2011 IEEE CPMT Society Outstanding Young Engineer Award, and was an Invited Participant in the 2012 National Academy of Engineering Frontiers of Engineering Symposium. He is also a recipient of the Semiconductor Research Corporation (SRC) Inventor Recognition Awards (2002, 2005, 2009). Dr. Bakir also received twelve conference and student paper awards including one from the IEEE Custom Integrated Circuits Conference (CICC), five from the IEEE Electronic Components and Technology Conference (ECTC), and three from the IEEE International Interconnect Technology Conference (IITC).
      Dr. Bakir an Associate Editor of IEEE Transactions on Components, Packaging and Manufacturing Technology, and was a Guest Editor of the June 2011 Special Issue of IEEE Journal of Selected Topics in Quantum Electronics. He is also a member of the International Technology Roadmap for Semiconductors (ITRS) technical working group for Assembly and Packaging (AP).
    • Can Bayram
       - Optoelectronic Devices
      Can Bayram portrait
      Department of Electrical and Computer Engineering
      University of Illinois at Urbana-Champaign
      Urbana 61801
      United States
      Phone 1:
      +1 (847) 863--6991

      Phone 2
      +1 (217) 300-0978

      Prof. Can Bayram is an Assistant Professor in the Department of Electrical and Computer Engineering of University of Illinois at Urbana-Champaign, IL, USA. He is an expert in III-V materials and photonic and electronic devices. He has performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition (MOCVD) systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon and investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics. Prof. Bayram’s work has been recognized widely. He is the recipient of the 2018 IUPAP Young Scientist Prize in Optics, 2018 IEEE Nanotechnology Council Early Career Award, a 2018 Dean’s Award for Excellence in Research for Assistant Professor, a 2018 Turkish American Scientists & Scholars Association Young Scholar Award, a 2017 NSF CAREER Award, the 2017 CS Mantech Best Student Paper Award, a 2016 AFOSR Young Investigator Award, the 2014 IEEE Electron Devices Society Early Career Award, and the Best Paper Award at the 11th International Conference on Infrared Optoelectronics. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior member status.

      Prof. Bayram worked as a Postdoctoral Research Scientist in the Silicon Technologies Division at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA from 2011 till 2014. His postdoctoral work at IBM on a novel means of thin film technology achieved record-breaking specific power solar cells and was featured on the cover of Advanced Energy Materials. He has – for the first time – integrated GaN-based devices on CMOS-compatible silicon substrates. This work was highlighted as the frontispiece in the Advanced Functional Materials issue. He demonstrated direct epitaxy of GaN on Graphene for the first time, as published in Nature Communications.

      Prof. Bayram received the Ph.D. degree from Prof. Manijeh Razeghi, Center for Quantum Devices, EECS of Northwestern University, IL, USA with a focus on Solid State and Photonics in 2011. His thesis work has demonstrated the first ultraviolet regime single photon detection, the first hybrid LED, and the first GaN intersubband devices. He received IEEE Electron Devices and IEEE Photonics Societies’ fellowship awards and the Laser Technology, Engineering and Applications Award from SPIE. He was an IBM and Link Foundation PhD fellow and the recipient of Boeing Engineering and Dow Sustainability Innovation awards.
    • Richard Blanchard
       - Solid-State Power
      Richard Blanchard portrait placeholder
      Blanchard Associates
      Blanchard Associates 10724 Mora Drive
      Los Altos, 94024
      United States
      Phone 1:
      +1 650 948 3073

      Richard A. Blanchard (SM’ 87 – LSM’ 12) received his B.S. and M.S. degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, MA, USA in 1968 and 1970, respectively, where he focused on solid state technology and power semiconductor devices. He obtained his Ph.D. degree from Stanford University, Stanford, CA, USA in 1982, where his thesis addressed the design, fabrication, and performance of power MOSFETs.
      Dr. Blanchard is the co-founder of several semiconductor companies, including Supertex, Cognition, and Pakal. He has also served as Vice President of Engineering at Siliconix and IXYS. During his career, Dr. Blanchard has focused primarily on power semiconductor devices, and has authored or co-authored a number of technical articles and contributed to a number of books. He is also holds over 250 US patents, the majority of which are in the power device area. He is recognized as the inventor of the trench MOSFET in the early 1980s and was awarded the two key patents on this device.
    • Richard G. Carter
       - Vacuum Electron Devices
      Richard G.  Carter portrait
      Lancaster University
      Lancaster LA1 4YR
      United Kingdom
      Phone 1:
      +44 1524 701231

      Richard G. Carter graduated in physics from the University of Cambridge in 1965 and received his PhD in electronic engineering from the University of Wales in 1968.
      From 1968 to 1972 he worked on high power travelling-wave tubes as a Development Engineer at English Electric Valve Co. Ltd.. He joined the Engineering Department of the University of Lancaster as a Lecturer in 1972 and was promoted to Senior Lecturer in 1986 and Professor of Electronic Engineering in 1996. He became an Emeritus Professor on his retirement in 2009. His research interests include electromagnetics and microwave engineering with particular reference to the theory, design and computer modelling of microwave tubes and particle accelerators. He is the author of two books and numerous papers in the field. He is currently working on a book entitled 'Microwave and RF Vacuum Electronic Power Sources' to be published by Cambridge University Press in 2018.
      Professor Carter is a Fellow of the IET, a Senior Member of IEEE and was a member of the Vacuum Electronics Technical Committee of the IEEE Electron Devices Society from 1998 to 2015. He received the IVEC 2009 Award for Excellence in Vacuum Electronics for ‘a life-long commitment to education in vacuum electronics and visionary leadership in academia and technical research in the field’. He has been an editor for T-ED since 2011.
    • Yogesh Singh Chauhan
       - Device and Process Modeling
      Yogesh Singh Chauhan portrait
      Indian Institute of Technology (IIT) Kanpur
      Department of Electrical Engineering
      Kanpur, U.P. 208016
      Phone 1:

      Phone 2

      Phone 3:
      +91-8853669988 (mobile)

      Yogesh Singh Chauhan (SM'12) is an associate professor at IIT Kanpur, India. He was with Semiconductor Research & Development Center at IBM in 2007 – 2010, Tokyo Institute of Technology in 2010 and University of California Berkeley in 2010-2012. He is the lead developer of industry standard BSIM-BULK (formerly BSIM6) model. He is the co-developer of ASM-HEMT model for GaN HEMTs, which is under industry standardization at the Compact Model Coalition (CMC). He was technical program committee member of IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013 and IEEE European Solid-State Device Research Conference (ESSDERC) 2016/2017. He is the member of IEEE-EDS Compact Modeling Committee. He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015. His research interests are characterization, modeling, and simulation of semiconductor devices.
    • Kyung Cheol Choi
       - Display Technology
       Kyung Cheol  Choi portrait
      Electrical Engineering
      335 Gwahangno Yuseong-gu
      Daejeon, 305-701
      Phone 1:
      82 42 350 3482

      82 42 350 8082
      Kyung Cheol Choi received the B.S. degree from the Department of Electrical Engineering, Seoul National University, Seoul Korea, in 1986, and the M.S. degree and Ph.D. degree in plasma engineering from Seoul National University in 1988 and 1993, respectively.
      From 1993 to 1999, he was involved with researching and developing display devices at the Institute for Advanced Engineering, Spectron Corporation of America, and Hyundai Electronics Industries. From 2000 to 2004, he was an Associate Professor with the Department of Electronics Engineering, Sejong University, Seoul, Republic of Korea. He was also in charge of the Information Display Research Center supported by the Korean Ministry of Information and Communication. Since February 1, 2005, he has been with the Department of Electrical Engineering, KAIST, Daejeon, Korea, where he was first an Associate Professor and is currently a KAIST Chair Professor. Since September 2007, he has been in charge of the Center for Advanced Flexible Display Convergence supported by the Korean Ministry of Education, Science, and Technology. He has also been in charge of LG Display –KAIST Cooperation center since 2010. His research interests include flexible and transparent displays, organic light-emitting diodes, and surface plasmon applications for electronic devices and displays.
      Dr. Choi is a member of the IEEE, the Society for Information Display, and the Korean Information Display Society. He had been an Associate Editor of IEEE/OSA Journal of Display Technology from 2005 to 2010.
    • Pei-Ying (Penny) Du
       - Memory Devices and Technology
      Pei-Ying (Penny)  Du portrait
      Macronix International Co. Ltd.
      Emerging Central Lab.
      No. 16, Li-Hsing Rd., Science Park
      Hsinchu 300Taiwan ROC
      Phone 1:
      886-3-5786688 ext. 78016

      Pei-Ying Du received her B.S. degree in engineering and system science from National Tsing-Hua University (NTHU), Hsinchu, Taiwan, in 2004, and Ph.D. degree in electrical engineering from National Chiao-Tung University (NCTU), Hsinchu, Taiwan, in 2009. In 2003, she won College Student Research Creativity Award from the National Science Council, Taiwan, and also won Kwoh-Ting Li Scholarship Award and King Kai-Yung Scholarship Award from CICT Foundation in 2004 and 2006, respectively. Her Ph.D. thesis was awarded by Honorable Mention of Institude of Electronics of NCTU in 2009. She joined the Emerging Central Lab. (ECL) in Macronix International Co., Ltd. (MXIC), Hsinchu, Taiwan, in 2006, where she engaged in the theoretical modeling and reliability physics of nitride trapping Flash memory. From March, 2010 to Jan., 2012, she was assigned to IBM/Macronix Phase Change Memory (PCM) Joint Project in IBM T.J. Watson Research Center, NY, and engaged in PCM reliability. She currently is the project deputy department manager of nano-technology R&D department and engages in developing 3D nitride trapping NAND Flash memory. Dr. Du has published more than 40 papers in the premier semiconductor conferences and journals including IEDM, Symposium on VLSI Technology, IRPS, IMW, T-ED, and etc. She is well-recognized in memory reliability territory because of her unique insights into the operations of nitride trapping memories. Dr. Du served in the program committee of International Memory Workshop (IMW) from 2012 to 2016, and she was also the Local Chair and the Short Course Chair of IMW, in 2014 and 2015, respectively. Now, she is the member of the Memory Technology (MT) sub-committee at International Electron Devices Meeting (IEDM).
    • Lixin Ge
       - Principal Engineer
      Lixin Ge is a principal engineer at Qualcomm Inc., San Diego, California. He received his M.S. degree from National University of Singapore in 1997 and Ph.D. degree from University of Florida, Gainesville in 2002, both from electrical engineering. His research was focused on the modeling and design of double gate and SOI CMOS devices and circuits, emerging technologies and devices including FinFETs and gate-all-around MOSFETs, and design-technology co-optimization.

      Dr. Ge joined Qualcomm in 2008 as a SPICE modeling expert, and has been instrumental in supporting over 30 product designs which are now in volume production. He is currently leading 7nm/5nm FinFET SPICE modeling projects, and design-technology co-optimization for next generation mobile chip. He received Qualcomm Upendra Patel Achievement Award for the outstanding contributions towards 28nm technology commercialization and for enabling the first Snapdragon chipset MSM8960 commercial launches in 2012, and Qualcomm Super Qualstar Award in recognition of the contribution for going above and beyond in supporting 10nm technology in 2017. Prior to joining Qualcomm, Lixin held various positions at Freescale Semiconductor/Motorola, Texas Instruments, and Chartered Semiconductor (now Globalfoundries). He is a senior member of IEEE, and had authored and co-authored over 30 publications, and has 16 issued and 21 pending patents.
    • Elena Gnani
       - Emerging Technologies
      Elena  Gnani portrait
      University of Bologna
      Bologna 40136
      Phone 1:
      39 051 2093773

      Elena Gnani received the M.S. degree in Electrical Engineering "summa cum laude" and the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled "Physical models for MOS nanostructures", both from the University of Bologna. In 2014 she became Associate Professor at the University of Bologna where she is involved in research activities concerning the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), steep-slope devices representing possible candidates for future generations of the nanoelectronic technology, quasi ballistic transport in nanoMOSFETs, as well as carrier injection in non-volatile memory cells. She has been involved in several National and European Projects. Her research activities have been carried out in cooperation with worldwide semiconductor research centers and semiconductor industries.
      E. Gnani is author or co-author of more than 180 papers published in referred international journals and in proceedings of major international conferences, and of several invited contributions. She has been a member of the IEEE Electron Devices Society (EDS) from 2001, and is presently an IEEE Senior Member and EDS Distinguished Lecturer for Region8. She is also a member of the EDS Technology Computer Aided Design Committee.
    • Tibor Grasser
       - Senior Member
      Prof. Tibor Grasser is an IEEE Fellow and currently head of the Institute for Microelectronics at TU Wien. He has edited various books, e.g. on the bias temperature instability and hot carrier degradation (both Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).
    • Edmundo A. Gutiérrez-D.
       - Thermal Management
      Edmundo A. Gutiérrez-D. portrait
      Instituto Nacional de Astrofisica (INAOE)
      L. E. Erro Nr. 1
      Tonantzintla, Puebla 72840
      Phone 1:
      +52 222 247 0517

      +52 222 247 0517
      Dr. Edmundo A. Gutiérrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
      Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
    • Anisul Haque
       - Compound Semiconductor Devices
      Anisul Haque portrait
      East West University
      Department of EEE, East West University, Aftabnagar
      43 Mohakhali C/A
      Dhaka, Bangladesh 1212
      Phone 1:

      Prof. Anisul Haque is currently the Chairperson, Department of Electrical and Electronic Engineering at East West University. He has also served as the Dean, Faculty of Sciences and Engineering, East West University from December 2007 to December 2008. He received his PhD from Clarkson University, USA in 1996 and MS from Texas A & M University, USA in 1992. He also earned another MS from Bangladesh University of Engineering and Technology (BUET), Bangladesh in 1989 and BS from BUET in 1987. Prof. Haque started his academic career as a lecturer in the EEE Department, BUET. He was a professor in the same department until December 2005. He was a Visiting Researcher with the Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Japan, from 2002 to 2004. Prof. Haque has also been a Visiting Faculty Member with Clarkson University (1997, 1998 and 2001), University of Connecticut, Storrs (1999), and the Tokyo Institute of Technology (2005).
      Prof. Haque’s research interests are in physics, modeling, simulation, and characterization of nano-scale electronic and photonic devices. His current activities include modeling and characterization of MOSFETs on high-mobility substrates, compact modeling of MOSFETs and investigation of novel properties of strained GaInAsP low dimensional structures. He is also interested in engineering education. Prof. Haque has published around 40 papers in refereed international journals. Prof. Haque is a senior member of IEEE and is a life member of Bangladesh Physical Society. He is the founding Chair of IEEE Electron Devices Society, Bangladesh Chapter. Prof. Haque has been serving as a Distinguished Lecturer of IEEE Electron Devices Society since 2009. He is the recipient of the University Grants Commission Award 2006 for research in engineering and technology.
    • Bram Hoex
       - Solid State Energy Sources
      Associate Professor Bram Hoex completed both a MSc and PhD degree from Eindhoven University of Technology in 2003 and 2008, respectively. From 2008 to 2015 he worked at the Solar Energy Research Institute of Singapore (SERIS) at the National University of Singapore (NUS) as a Group Leader and from 2012 also as Director of the Silicon Materials and Cells Cluster. In 2015 he joined the School of Photovoltaic and Renewable Energy Engineering (SPREE) at UNSW Sydney where he currently serves as Deputy Head of School (Research). His research group focusses on the fabrication and characterization of high-efficiency silicon wafer solar cells with a particular focus on surface passivation and passivating contacts. He is best known for his groundbreaking work on aluminium oxide for crystalline silicon surface passivation which is now the de facto standard for industrial PERC solar cells. He also pioneered the application of atomic layer deposition for silicon wafer solar cell manufacturing. He has published over 150 journal and conference papers, and in 2018 he released PV-manufacturing.org which is aimed at educating students and professionals in the area of photovoltaic manufacturing. His work has received various international recognitions including the 2008 SolarWorld Junior Einstein and the 2016 IEEE PVSC Young Professional awards.
    • Sung-Min Hong
       - Device and Process Modeling
      Sung-Min  Hong portrait
      GIST (Gwangju Institute of Science and Technology)
      123 Cheomdangwagi-ro, Buk-gu, Gwangju
      Phone 1:
      82 62 715 2640

      82 62 715 2204
      Sung-Min Hong received the B.S. degree in electrical engineering and the Ph.D. degree in electrical engineering and computer science from Seoul National University, Seoul, Korea, in 2001 and 2007, respectively.

      From 2007 to 2011, he was a Postdoctoral Researcher at the “Institut fuer Mikroelektronik und Schaltungstechnik,” Bundeswehr University, Neubiberg, Germany. From 2011 to 2013, he was a Staff Engineer at the Device Laboratory, SSI, San Jose, CA. He is currently an Assistant Professor with the School of Electrical Engineering and Computer Science, Gwangju, Korea.

      His main research interests include physics-based device modeling.

    • Benjamin Iniguez
       - Device and Process Modelling
      Benjamin Iniguez portrait
      Senior Member
      Universitat Rovira i Virgili (URV)
      Avinguda dels Paisos Catalans 26
      Tarragona 43007
      Phone 1:
      34 977558521

      34 977559605
      Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs.
      His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
    • Karol Kalna
       - Device and Process Modeling
      Karol Kalna portrait
      Swansea University
      College of Engineering
      Bay Campus, Crymlyn Burrows
      Swansea, Wales SA1 8EN
      United Kingdom
      Phone 1:
      +44 (0) 1792 606678

      +44 (0) 1792 295676
      Karol Kalna
      received M.Sc. degree (Hons.) in Solid State Physics in 1990 and Ph.D. degree in Condensed Matter Physics in 1998 from Comenius University, Bratislava, Czechoslovakia. In 1994, he joined Institute of Electrical Engineering, Bratislava, Slovakia, as a Research Scientist. He was a visiting postgraduate student in the Department of Physics, UIA University of Antwerp, Belgium, in 1994 and 1997, working on semiconductor lasers modelling. From 1999 till 2010, he was in the Department of Electronics & Electrical Engineering, University of Glasgow, U. K., where he was studying the scaling of high electron mobility transistor (HEMT) into sub-100 nm dimensions performing DC and RF analysis within ensemble Monte Carlo simulations. From 2002, he pioneered III-V MOSFETs for future digital technology studying transistor scaling with Monte Carlo simulations. From 2007 till 2012, he was an Engineering and Physical Sciences Research Council (EPSRC) Advanced Research Fellow carrying out the Monte Carlo modelling of deep sub-100 nm, ultra-thin body transistors with Si and high mobility materials in a channel. He was involved in several research projects on III-V MOSFETs for digital applications funded by ESPRC and European Community (DualLogic). In 2010, he became a Senior Lecturer and, in 2013, Associated Professor in College of Engineering, Swansea University, Wales, U. K., establishing his own Nanoelectronic Devices Computational Group. He has more than 200 publications including 81 papers in peer-review journals, 3 book chapters and more than 20 invited talks. He is a Senior Member of the IEEE. His research interests include finite element 2D and 3D Monte Carlo simulations of nanoscaled MOSFETs including FinFETs and gate-all-around nanowires with a channel based on Si, strain Si, and III-V semiconductors; quantum transport simulations using Non-Equilibrium Green's Functions; multiscale modelling coupling density functional theory calculations with Monte Carlo simulations; and simulations of GaN based HEMTs and ZnO nanowires.
    • Brajesh Kumar Kaushik
       - Emerging Technologies
      Brajesh Kumar Kaushik portrait
      Indian Institute of Technology
      Indian Inst of Technology - Roorkee
      Phone 1:

      Dr. Brajesh Kumar Kaushik (S’07–M’09–SM’13) received his Ph.D. degree in 2007 from Indian Institute of Technology Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; and since April 2014 he has been working as an Associate Professor. He has authored and reviewed several research publications in renowned journals, national and international conferences. He is a Senior Member of IEEE and holds the position of Editor and Editor-in-Chief of various journals in the field of VLSI and microelectronics. He has received many awards for his significant contribution to the scientific community. His research interests include spintronics-based devices and circuits, high-speed interconnects low-power VLSI design, memory design, carbon nanotube-based designs, organic electronics, FinFET device circuit co-design.
    • Tae-Hun Kim
      Tae-Hun Kim portrait placeholder
      Samsung Electronics Hwaseong Site Semiconductor R&D center
      Hwaseong 18448
      South Korea
      Tae-Hun Kim was born in Korea in 1973. He is a principal engineer working on Flash memory development at Semiconductor R&D Center, Samsung Electronics. He received B.S. and M.S. degree from School of Electrical Engineering, Seoul National University, Seoul, Korea, in 1999 and 2001, respectively. He received Ph.D. degree at the same university in 2006. In 2006, he joined Samsung Electronics Co., Hwasung, Korea, where he has been engaged in the development of NAND flash memories. During the developments of planar NAND flash down to 1x nm technology node, his main focus was on the device design, process development, failure analysis, and chip operation development. He has been working on the device development of 3 dimensional NAND flash since 2011 when he joined the project developing 2nd generation 3 dimensional NAND Flash. Currently he is working on the product development of next generation 3 dimensional NAND and his interests are the design of 3 dimensional NAND cell transistor and new scheme of the device for the future NAND.
    • Gwan-Hyeob Koh
       - Memory Devices and Technology
      Gwan-Hyeob Koh portrait
      Samsung Electronics Company Ltd
      Memory TD Semiconductor R&D Center
      San#16 Banwol-Dong, Gyeonggi-Do
      Hwasung City 445-701
      Phone 1:

      Gwan-Hyeob Koh is a principal engineer working on memory development at Semiconductor R&D Center, Samsung Electronics. He received B.S., M.S., and Ph.D. degrees in physics from Seoul National University, Seoul, Korea, in 1989, 1991 and 1996 respectively. In 1997, he joined Samsung Electronics and was involved in the development of 1Gb and 4Gb DRAM. From 2002, he has been worked on the development of next generation new memories including MRAM and PRAM. He was involved in the PRAM development from R&D to mass production stage, where his major work was related to process integration, memory device reliability, and yield enhancement. In 2007, he was visiting scholar at EE dept. of Stanford University. His current activity at Samsung Electronics is focused on the development of STT-MRAM. From 2009, he has been serving as a subcommittee member of the international conference on Solid State Devices and Materials (SSDM).
    • Lalit Kumar
       - Vacuum Electron Devices
      Lalit  Kumar portrait
      Metcalfe House, Civil Lines
      Mahtma Gandhi Road
      Delhi 110054
      Phone 1:
      +91 11 23817202

      Phone 2
      +91 9483570719 (M)

      +1 91 1123814021
      Dr. Lalit Kumar received his Ph.D. (Physics) from Birla Institute of Technology & Science Pilani. He is the Chairman, Centre for Personnel Talent Management (CEPTAM), DRDO, Delhi and Adjunct Professor at IIT, Roorkee. He was the Director of Microwave Tube Research and Development Centre, DRDO, Bangalore (2003-15); Senior Scientist at Central Electronics Engineering Research Institute, Pilani; DAAD Research Fellow in Germany at the University of Tuebingen, Tuebingen, Technical University of Hamburg–Harburg and Philips, Hamburg; Honorary Visiting Research Fellow at Lancaster University; AICTE-INAE Distinguished Visiting Professor at IT, BHU, Varanasi. He attended Executive Education Programmes at: IIMs at Bangalore & Ahmedabad; NIAS, Bangalore and JF Kennedy School of Government, Harvard University, Cambridge. His contributions encompass: theory, simulation and engineering development of microwave tubes like: coaxial magnetron, helix- and coupled-cavity-traveling wave tubes, multi-beam klystron, vircator, relativistic magnetron, Gyrotron; microwave power modules and compact transmitters. He has coordinated several inter-laboratory and international collaborative projects. His current interests include: TWTs, high power microwaves, and vacuum microelectronic devices. He received the DRDO Agni Award for Excellence in Self-Reliance – 2003 & 2013, 37th IETE Ram Lal Wadhwa Award & Gold Medal- 2014l, IETE-IRSI (83)-2001 Award, JC Bose Memorial Award of IETE for Best Paper -1993, and Best Project Award of CEERI-1993. He is a Fellow, Indian National Academy of Engineering; Fellow IETE; Fellow and Founder President Vacuum Electron Devices and Applications (VEDA) Society, India; Senior Member, IEEE; Member: Indian Physics Association, Indian Vacuum Society, Indo–French Technical Association, Magnetics Society of India; and member-EXECOM, IEEE Delhi section; Editor, EEE Trans. on Electron Devices; He was member IEEE EDS Tech Committee on vacuum electronics; and General Chair, IEEE-IVEC-2011, Bangalore, India.
    • Ioannis (John) Kymissis
       - Molecular and Organic Devices
      Ioannis (John) Kymissis portrait
      Columbia University
      Electrical Engineering
      500 W120th Street Room 1300/MC 4712
      New York, NY 10027
      Phone 1:

      Phone 2

      Ioannis (John) Kymissis is an electrical engineer teaching at Columbia University. His area of specialization is solid state electronics and device fabrication, with an emphasis on thin film devices and the use of organic semiconductors in his work. He graduated with his SB, M.Eng., and Ph.D. degrees from MIT, and after working as a post-doc and at QDVison, joined the faculty at Columbia University in 2006. John has won a number of awards for his work, including the NSF CAREER award, the IEEE EDS Paul Rappaport award, the Vodaphone Americas Foundation Wireless Innovation Award, and the MIT Clean Energy Prize. He is currently serving as the editor-in-chief of the Journal of the Society for Information Display and is the general chair for the 2013 Device Research Conference.
    • Assaf Lahav
       - Image Sensors
      Assaf Lahav portrait
      Tower Semiconductor Ltd.
      Ramat Gavriel Industrial Park 20 Shaul Amor Avenue P.O 619
      Migdal Haemek 2310502
      Phone 1:
      (O) 972-4-6506063

      Phone 2
      (M)+972 52 420 9708

      Fax: 972 4 654 7788
      Assaf was born in 1969 in Israel. He received his Ph. D degree from Electrical Engineering department at the Technion, Israel Institute of Technology in 2006. Assaf joined TowerJazz on 2001 and he has been the technology leader in the CMOS-Image-Sensor(CIS) R&D group at TowerJazz Semiconductor from 2002. Assaf was responsible for the image sensor 0.18 technology ramp in 0.18fab in Migdal Haemeq Israel. From 2005 to 2008 he had been developing different device and process schemes for improving pixel dynamic range, noise and sensitivity. This work enabled the transition from CCD technology to CIS in fields like cinema digital photography and Broadcasting. From 2008 Assaf had been working on global shutter pixel technology and Fast Sensors. This work in now widely used in many cameras including Time of Flight (TOF) and structured light 3D, Range Cameras for automotive applications, Industrial and traffic control inspection cameras. Assaf is currently a Senior Principal Engineer at TowerJazz with worldwide responsibly over the CIS technology offering. His current research is focused on low noise GS technology, high resolution NIR imaging and back side illumination devices. Assaf has authored or co-authored more than 30 technical papers in international journals and conference and have 9 issues patents.
    • Javier Mateos
       - Solid-State Phenomena
      Javier  Mateos portrait
      University of Salamanca
      Applied Physics Department, Pza Merced s/n
      Salamanca 37008
      Phone 1:
      +34 677 565 427

      +34 923 294 584
      Javier Mateos (M’09) was born in Salamanca, Spain, in 1970. He received the B.S. and Ph.D. degrees in physics from the University of Salamanca in 1993 and 1997, respectively. Since 1993, he has been with the Department of Applied Physics of the University of Salamanca, becoming Full Professor in 2017. He was coordinator of EU project ROOTHz aiming at fabricating THz emitters and detectors using semiconductor nanodevices. In addition to THz devices, his present research interests also include the development of novel device concepts using ballistic transport and HEMTs based in both narrow and wide bandgap III–V semiconductors. He is author or co-author of more than 120 indexed journal papers and 200 conference contributions.
    • Youichi Momiyama
       - MOS Devices and Technology
      Youichi Momiyama portrait
      Fujitsu Semiconductor LTD
      1500 Mizono Tado-cho
      Kuwana 511-0192
      Phone 1:
      81 594 24 2640

      81 594 24 5583
      Youichi Momiyama received the B.S. and M.S. degree in electronics engineering from Niigata University, Niigata, Japan, in 1990 and 1992, respectively.
      In 1992, he joined Fujitsu Laboratories Ltd., Atsugi, Japan, where he has been engaged in research and development of low-power and high-speed CMOS devices. He developed the deep sub-micron high-k / metal gate transistor using Ta2O5 / TiN stack in 1997, and accelerated the research and development of high-k materials as a gate stack application. After that, he was engaged in research of RF-CMOS transistor design based on the bulk and SOI technologies for SOC application. He has also been engaged in process integration of 130-45 nm LP and HP technologies at the same time.
      His present activities include process integration of 32/28 nm node LP and HP technologies, Si MOSFET scaling, device characterization and circuit-device co-design.
      Mr. Momiyama is a member of the IEEE electron devices society and solid-state circuits society.
    • Yong-Young Noh
       - Molecular and Organic Devices
      Yong-Young Noh portrait
      Pohang University of Science and Technology (POSTECH)
      Department of Chemical Engineering
      77 Cheongam-Ro Nam-Gu
      Pohang 37673
      Phone 1:
      +82 10 5044 9649, +82 0542792265

      Prof. Yong-Young Noh is working as Professor in Department of Chemical Engineering at POSTECH from 2019. He received Ph.D. in 2005 at GIST and then worked at the Cavendish Laboratory as a Post-doc. (2005 – 2007). After then he worked in ETRI as a Senior researcher (2008 – 2009), Hanbat National University as an Assistant professor (2010 – 2012), and Dongguk University-Seoul as an Associate Professor (2013-2018). Prof. Noh has been published more than 270 SCI papers and 60 patents and awarded Merck Young Scientist Award (2013), Korean President Award (2014), IEEE George E. Smith Award (2014), This Month Scientist Award of Korea (2016), and Samsung Display-KIDS Gold Award (2017). He also edited a book entitled “Large Area Flexible Electronics” (John-Wiley VCH). His expertise is in the organic and molecular electronics, printed electronics, and flexible electronics.
    • Lucio Pancheri
      Lucio Pancheri portrait placeholder
      Image Sensors
      University of Trento
      Department of Industrial Engineering
      Via Sommarive, 9
      Trento 38123
      Phone 1:

      Lucio Pancheri received the M.Sc. degree (summa cum laude) in Materials Engineering and the Ph.D. in Information and Communication Technologies from the University of Trento, Italy, in 2002 and 2006, respectively. From 2006 to 2012 he has been a research scientist at Fondazione Bruno Kessler (FBK), Italy, within the Integrated Radiation and Image Sensors (IRIS) research unit. In 2012 he joined the Department of Industrial Engineering at the University of Trento where he is currently Assistant Professor of Electronics.
      His research activity has been mainly directed towards the development of CMOS integrated Single Photon Avalanche Diodes and image sensors for Time-of-Flight ranging and scientific imaging. His research interests also include gas sensors, hybrid organic-CMOS photodetectors, radiation and charged-particle imaging detectors for high-energy physics, medical and space applications. He has authored or co-authored more than 120 papers in international journals and in the proceedings of international conferences.
    • Marcelo Pavanello
       - Device and Process Modeling
      Marcelo Pavanello portrait
      Centro Universitario FEI
      Av. Humberto de Alencar Castelo Branco, 3972
      Sao Bernardo do Campo, Sao Paulo 09850-901
      Phone 1:

      Marcelo Antonio Pavanello (S´99-M´02-SM´05) received the Electrical Engineering degree from FEI University in 1993, receiving the award “Instituto de Engenharia” given for the best student among all the modalities of engineering programs offered at FEI. He received the M. Sc. and Ph. D. degrees in 1996 and 2000, respectively, in Electrical Engineering (Microelectronics) from University of São Paulo, Brazil. From August to December 1998 he was with Laboratoire de Microélectronique from Université Catholique de Louvain (UCL), Belgium, working in the fabrication and electrical characterization of novel channel-engineered Silicon-On-Insulator (SOI) transistors. From 2000 to 2002 he was with the Center of Semiconductor Components and Nanotechnologies, State University of Campinas, Brazil, where he worked as a post-doctoral researcher in the development of a CMOS n-well process. Since 2003 he joined FEI University where he is now Full Professor at Electrical Engineering Department. In 2008 he has been with UCL as a visiting professor.
      Dr. Pavanello is Senior member of The IEEE and Brazilian Microelectronics Society. He is also Research Associate to the National Council for Scientific Development (CNPq), Brazil. Since 2007 he serves as IEEE Electron Devices Society (EDS) Distinguished Lecturer and has been nominated to the Compact Modeling Technical Committee of EDS in 2018.
      He is author and co-author of more than 300 technical papers in peer-reviewed journals and conferences, and author/editor of 6 books. Dr. Pavanello coordinates several research projects fomented by Brazilian agencies like FAPESP, CNPq and Capes. He also supervised several Ph. D. dissertations, M. Sc. thesis and undergraduate projects in Electrical Engineering.
      His current interests are the compact modeling, fabrication, electrical characterization and simulation of SOI CMOS transistors with multiple gate configurations and silicon nanowires; the wide temperature range of operation of semiconductor devices; the digital and analog operation of novel channel-engineered SOI devices and circuits.
    • Siddharth Rajan
       - Compound Semiconductors
      Siddharth  Rajan portrait
      Ohio State University
      Electrical Engineering
      2015 Neil Ave Rm 205
      Columbus, OH 43210
      Phone 1:
      +1 614 247 7922

      +1 614 292 7596
      Siddharth Rajan is Associate Professor in the Electrical and Computer Engineering and Material Science and Engineering departments at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions in UC Santa Barbara and GE Global Research, NY. His research interests include semiconductor devices and materials, molecular beam epitaxy, transport and heterostructure phenomena, and high frequency transistors. He has co-authored over 100 journal papers.
    • Huiling Shang
       - MOS Devices and Technology
      Huiling Shang portrait
      IBM Systems and Technology
      2070 Rt 52
      Mailstop 47B
      Hopewell Junction, NY 12533
      Phone 1:
      +1 914 945 1687

      Phone 2
      +1 914-455-3599 (Home)

      +1 914 945 2141
      Huiling Shang received her Ph.D. degree in Electrical Engineering from Lehigh University, Bethlehem, Pennsylvania, in 2001. She joined IBM T. J. Watson Research Center as a research staff member after her graduation. Her research experience includes both strained germanium and silicon-germanium channel CMOS device design and integration, transport physics in ultra thin SOI and FinFET device technologies. In 2006, she took an assignment as Technical Assistant to the Vice-President of IBM SRDC (Semiconductor Research & Development Center). Since then, she has been working in the IBM SRDC on advanced CMOS technology development. From September 2006 to June 2008, she managed the 45nm Bulk CMOS device design group. Starting in July 2008, she has been managing the 22/20nm CMOS device design group.
      She is a member of the IEEE Electron Device Society AdCom Committee and the VLSI Circuits and Technology Committee.
    • David Sheridan
       - High Voltage and Power Devices
      David Sheridan portrait
      Alpha and Omega Semiconductor
      7736 Chesterbrooke Drive
      Greensboro, NC 27455
      Phone 1:

      David Sheridan (SM'17) received his B.S., M.S., and Ph.D. degrees in electrical engineering from Auburn University in 1995, 1997, and 2001, respectively. His research in WBG devices started in 1995 with the development of high temperature SiC devices and packaging and extending to optimization of process, design and edge termination techniques for early multi-kV SiC JBS diodes. From 2001 until 2006 he was with the IBM SRDC working on SiGe technology development. In 2006 he joined SemiSouth Laboratories responsible for product and device design of high voltage (600V-1.7kV) JFETs, JBS didoes, and power modules. In 2012 he joined RFMD to work on high voltage GaN technology development. Since 2015 he has been at Alpha and Omega Semiconductor leading the GaN and SiC power device technology development and products. Dr. Sheridan has authored and co-authored over 80 technical publications, 2 book chapters, awarded more than 30 U.S. patents, and has given several invited talks across a wide range of semiconductor and application topics. He has severed on the committees of several IEEE conferences and standards bodies including IEDM, BCTM, ISPSD, IRPS, ESREF, and the EDS Power Devices and ICs committee.
    • Gregory Snider
       - Emerging Technologies and Devices
      Gregory Snider portrait
      University of Notre Dame
      Electrical Engineering
      275 Fitzpatrick Hall Room B1
      Notre Dame , IN 46556
      Phone 1:
      +1 574 631-4148

      +1 574 631-4393
      Gregory Snider was born in Riverside, CA. He received his BSEE degree from the California State Polytechnic University, Pomona in 1983. From 1983 to 1985, he worked for the Motorola Government Electronics Group on integrated circuit design. He received the MSEE and PhD degrees from the University of California, Santa Barbara in 1987 and 1991, where his dissertation research was on the design and fabrication of quantum point contacts. As a post-doc from 1991 to 1993 in the Applied and Engineering Physics Department at Cornell University, he worked on ballistic transport devices. From 1993 to 1994, he worked for Galileo Electro-Optics Corporation on dry-etching techniques for the fabrication of microchannel plates. In 1994 he joined the Department of Electrical Engineering at the University of Notre, serving as Assistant Professor until 2000, as Associate Professor from 2000 to 2005, and as Professor since 2005. His current topics of research concentrate on the area of nanoelectronics and fabrication, molecular electronics, and the issues of the fundamental limits of dissipation in computation. He is a senior member of the IEEE, and a member of the American Physical Society and the American Society of Engineering Education. He has authored or co-authored over 100 journal publications and over 140 conference presentations.
    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Director and Senior Technologist Foundry Technology Development
      Foundry Technology Development
      951 SanDisk Drive
      Milpitas, CA 95035
      Phone 1:
      O: 408-801-8118

      Phone 2
      C: 858-947-8513

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
    • Rama Venkatasubramanian
       - Thermal Management & Energy Harvesting
      Rama Venkatasubramanian portrait
      John Hopkins University
      Energy and Thermal Management Research and Exploratory Development Applied Physics Lab
      11100 Johns Hopkins Rd
      Laurel, MD 20723
      Phone 1:
      (240) 228-5164

      Dr. Venkatasubramanian (Ph.D. Rensselaer, New York, 1988; B.S. Indian Institute of Technology, Madras, India, 1983; Electrical Engineering) is dedicated to the innovation and advancement of several solid state energy conversion materials and device technologies as well as transitioning them to the commercial and defense industries. Dr. Venkatasubramanian is presently at the Johns Hopkins University, Applied Physics Lab as Team Leader for Energy and Thermal Management in the Research and Exploratory Development department. Dr. Venkatasubramanian is also the Co-Founder of Novus Energy Technologies, a spin-off company focused on energy technologies. Until April 2013, Dr. Venkatasubramanian was the Senior Research Director of the Center for Solid State Energetics at RTI International, where he directed innovative basic and applied research in thermoelectrics, photovoltaics, and optoelectronic materials and devices for solid state energy conversion applications. Dr. Venkatasubramanian is the Founder and was also the Chief Technology Officer of Nextreme Thermal Solutions, between 2004-2006, which is commercializing thin-film thermoelectric technology developed under his leadership with DARPA funding; Nextreme was acquired by Laird Technologies in Feb. 2013. Dr. Venkatasubramanian has over 115 peer-reviewed journal and conference publications, 15 issued patents, over 100 presentations in the area of thermoelectric materials and devices, photovoltaics, optoelectronics, and 5 book chapters and edited proceedings. Dr. Venkatasubramanian initiated and developed a research program focused on demonstrating the fundamental advantages of atomically engineered superlattices and other nanoscale materials; this research resulted in the first major breakthrough in the field of thermoelectrics in 40 years (Nature 2001, Nature Nanotechnology 2009), that led to hundreds of laboratories around the world working on other nanoscale thermoelectric materials. Dr. Venkatasubramanian has received two R&D 100 Awards in 2002 and 2010 for thermoelectric innovations, the Margaret Knox Excellence Award for research at RTI in 2002 and Rensselaer’s Allen B. Dumont Prize for research achievements. Dr. Venkatasubramanian was elected Fellow of the IEEE (2011) for contributions to nanoscale thermoelectrics for thermal management of electronics and energy harvesting and a Fellow of AAAS (2012) for seminal contributions to nansocale materials and devices for advanced thermoelectric devices. Dr. Venkatasubramanian has also contributed to advances in multi-junction GaAs-based photovoltaics, received a best paper award at the IEEE First World Conference on PV (1994), and his photovoltaics work has been recognized as key achievements by Department of Energy in 1995-97. Dr. Venkatasubramanian has organized several symposia and has edited proceedings in thermoelectrics, energy harvesting and nanoscale thermal transport for the American Physical Society, Materials Research Society, IEEE and other professional societies.
    • Giovanni Verzellesi
       - Compound Semiconductors
      Giovanni Verzellesi portrait
      Giovanni Verzellesi was born in Italy in 1964. He received the “Laurea” degree (summa cum laude) in Electrical Engineering from the University of Bologna, Bologna, Italy, in 1989, and the Ph.D. degree also in Electrical Engineering from the University of Padova, Padova, Italy, in 1994. In 1993-94 he was a visiting graduate student with the University of California, Santa Barbara, USA.
      He was with the University of Trento, Trento, Italy, as a Research Associate from 1994 to 1999. In 2000 he joined the University of Modena and Reggio Emilia, Italy, where he became Associate Professor in 2001 and full Professor of electronics in 2006.
      His research activity has been concerned with the modeling, simulation, and characterization of semiconductor devices and sensors and has covered, over the years, the following topics: impact-ionization effects in Si bipolar transistors, Si- and SiC-based radiation detectors, GaN LEDs, and III-V-based field-effect transistors. His current research interests are mainly in GaN field-effect transistors for RF and power switching applications and III-V MOSFETs for logic ICs.
      He has coauthored more than 100 papers in international journals and more than 110 papers in proceedings of international conferences.
      Dr. Verzellesi is a Senior Member of the IEEE. He has served in the technical program committee of the following conferences: IEEE IEDM, IEEE IRPS, ESREF, ESSDERC, EXMATEC, HETECH.

    • Runsheng Wang
       - MOS Devices and Technology
      Runsheng Wang portrait
      Peking University
      Institute of Microelectronics
      Beijing 100871
      Phone 1:
      (+86-10) 62768773

      Runsheng Wang (S’07-M’11) received the B.S. and Ph.D. (highest honors) degrees from Peking University, Beijing, China, in 2005 and 2010, respectively.
      From November 2008 to August 2009, he was a Visiting Scholar with Purdue University, West Lafayette, IN, USA. He joined Peking University in 2010, where he is currently an Associate Professor at the Institute of Microelectronics. He has authored/coauthored 1 book, 3 book chapters, and over 100 scientific papers, including more than 30 papers published in International Electron Devices Meeting (IEDM) and Symposium on VLSI Technology (VLSI-T). He has been granted 12 US patents and 29 Chinese patents. His current research interests include nanoscale CMOS devices and characterization, circuit and device interaction, and emerging technologies for new-paradigm computing.
      Dr. Wang was awarded the IEEE EDS Early Career Award by the IEEE Electron Device Society (EDS), NSFC Award for Excellent Young Scientists by the National Natural Science Foundation of China (NSFC), Natural Science Award (First Prize) by the Ministry of Education (MOE) of China, and many other awards. He serves on the Editorial Board of Scientific Reports, and SCIENCE CHINA: Information Sciences, and has served on the Technical Program Committee of many IEEE conferences, including IEDM, IRPS, ICSICT, IPFA, INEC, etc.