Electronic Materials Committee
The power consumption is the crucial challenge for electronic devices. The high-κ dielectrics, metal gate, and high mobility materials have made strong impacts on high-performance low-power CMOS, DRAM, and flash memory. The objectives of this committee are to explore new and useful electronic materials for ultra-low-power Steep Turn-On CMOS, novel DRAM, Non-Volatile Memory, Energy-Saving devices, Display, and other electronic devices. To promote new technology, the committee will organize or recommend special issues for IEEE journals, panel sessions, and session topics for major conferences
Members are volunteers who serve for a two-year renewable term at the invitation of the committee chair. Membership is limited to two consecutive terms so that new ideas can be generated, incorporated, and executed.
Historically electronic materials such as silicon, germanium, gallium nitride, silicon carbide, etc. have played critical role to advance the electron device technology. In the past two decades emergence of new materials and new device applications have further emphasized the need for more synergistic interaction between the two and the relevant researchers, technologists and engineers.
If you have ideas that you would like to have considered by this committee (e.g. a new workshop, aspecial issue, topics for special sessions, etc.) please contact any current committee member. If you would like to volunteer on the committee, please contact the committee chair.