Technology Computer Aided Design
Technology Computer Aided Design Committee Chair
Technology Computer Aided Design Committee Members
Jing Guo - Professor, Department of Electrical and Computer Engineering
Department of ECE , Gainesville, FL,
Jing Guo is currently a professor in Department of Electrical and Computer Engineering at University of Florida, Gainesville, FL, USA. His research work mainly focuses on modeling, simulation, and design of nanoscale electronic devices. His group has extensively explored device physics, assessed performance potentials, and developed new device concepts for nanoscale transistors based on carbon nanotubes, graphene, 2D materials and topological insulators, and memory cells based on ferroelectric materials. His group has developed efficient simulation methods for quantum-transport-based device simulations, and physics-based models for nanoscale transistors. More recently, his group has contributed to simulation of interconnects based on topological insulator materials and semiconductor-based quantum computing devices. He has also developed and contributed to some widely used simulation tools deployed on the nanoHUB, such as CNTbands. Jing Guo received his B.S. (1998) and M.S. (2000) degrees from Shanghai Jiao Tong University and Ph.D. degree in Electrical Engineering from Purdue University (2004). He served in the technical program committee of the International Device Research Meeting (IEDM) and Device Research Conference (DRC). He also serves as an associate editor of Nano-Micro Letters. He coauthored a book “Nanoscale Transistors: Device Physics, Modeling, and Simulation.” Published by Springer.
Jinfeng Kang - Memory Devices and Technology
Jinfeng Kang received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics & microelectronics from Peking University in 1992 and 1995 respectively. From 1996 to 1997 he worked on the new oxides applications in microelectronics at Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work on high-k/metal gate technology at SNDL in National University of Singapore as a visiting professor. He is now a Full Professor of Electronics Engineering Computer Science School in Peking University. His research interest is to explore novel device concepts, structures, materials, circuits, and the system architectures for the applications of future computing and data storage systems. He has published over 200 conference and journal papers, and was speaker of more than 30 invited talks such as IEDM, ASP-DAC, MRS.
Victor Moroz - Silicon and Column IV Semiconductor Devices; Solid-State Device Phenomena
Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys. Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping. Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents. He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.
Susanna Reggiani - Associate Professor
Susanna Reggiani is Associate Professor at the Faculty of Engineering of the University of Bologna, Italy. She received the Ph.D. degree in Electrical Engineering from the University of Bologna in 2001. Since 2001 she is with the Department of Electronics and with Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Her scientific activity has been devoted to the physics, modeling and characterization of electron devices, with special emphasis on transport models in semiconductors. Since 2007 she has been involved in Projects dealing with the TCAD analysis of power MOSFETs, modeling and characterization of hotcarrier stress degradation, modeling of package influences on high-voltage semiconductor FETs, TCAD study of the reliability of GaN-on-Si HEMTS. She is currently involved in European Projects on the development of physically-based models for SiC-based power devices and Smart Power integrated devices.
Nuo Xu - Device and Process Modeling
Nuo Xu received the B.Sc. degree in Microelectronics from Peking University, China in 2008, M.S. and Ph.D. degrees both in Electrical Engineering from the University of California, Berkeley in 2010, and 2012, separately. His Ph.D. thesis was about Strain-Si Thin-body Transistor Technologies. He has been with Synopsys in 2010 and imec in 2011 for temporary positions. He became a post-doctoral scholar and lecturer in EE of UC Berkeley in 2012, researching on 3D integration of emerging logic and memory devices and design-technology co-optimization (DTCO). He joined Samsung America Headquarters, Device Solutions (AHQ-DS) in 2014, as a senior staff research scientist, working on emerging non-volatile memories (NVM), DTCO and EDA/CAD algorithm development. He joined TSMC North America in 2019, as a R&D manager, focusing on developing leading-edge NVM technologies, compact modeling and EDA/CAD methodologies. He has published over 100 technical papers on peer-reviewed journals and conferences (including 12 IEDM/VLSI papers as the first author); and applied/been granted for over 10 US patents. He is a member of the IEEE Electron Devices Society (EDS) Technical Committee on Technology CAD, and served as the sub-committee chair (2020) and members (2018-19) of IEEE IEDM Modeling and Simulation sessions. He was a recipient of IEEE EDS Student Fellowship (2010), TSMC Academia Award for Outstanding Student (2012), and Samsung AHQ-DS President Award (2019).
- Technical Committees
- Compact Modeling Committee
- Compound Semiconductor Devices and Circuits Committee
- Device Reliability Physics Committee
- Electronic Materials Committee
- Flexible Electronics and Displays Committee
- Microelectromechanical Systems
- Nanotechnology Committee
- Neuromorphics Technical Committee
- Optoelectronic Devices Committee
- Photovoltaic Devices Committee
- Power Devices & ICs Committee
- Quantum Technologies Technical Committee
- Semiconductor Manufacturing
- Technology Computer Aided Design
- Vacuum Electronics Committee
- VLSI Technology & Circuits Committee