Leo Esaki Award
The Leo Esaki Award was established in 2019 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the International Electron Devices Meeting.
Congratulations to the 2022 IEEE EDS Leo Esaki Award Winners for the winning paper
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model
Award Winners
| Year | Individuals | Paper |
| 2022 |
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, and Masaharu Kobayashi |
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model |
| 2021 | Sung-Tae Lee, Gyuho Yeom, Joon Hwang, Hyseongsu Kim, Honam Yoo, Byung-Gook Park and Jong-Ho Lee | Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks |
| 2020 | Wei-Xiang You, Pin Su and Chenming Hu | A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET |
| 2019 | Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, and Toshiro Hiramoto | Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process |