Technology Computer Aided Design
Objective
• The objective of the Technology Computer-Aided Design (TCAD) Committee is to promote the interests of all stakeholders in the TCAD community. We want to
- - Highlight TCAD as an essential part of semiconductor technology development.
- - Maximize the quality of TCAD and its ability to make predictions about future devices of interest to industry
- -Enable successful careers in TCAD from the undergraduate level to senior TCAD engineer or researcher
- - Build a cohesive community including all stakeholders (academia, developers of TCAD codes, and industrial end users)
Membership
Members are volunteers who serve for a two-year renewable term at the invitation of the committee chair. Membership is limited to two consecutive terms so that new ideas can be generated, incorporated, and executed.
History
In 2000, an exciting time for TCAD, this technical committee was formed to promote and advocate for TCAD. The first chairman was Professor Mark Law and there were 13 initial committee members.
Conferences / Journals
• Conferences that contain TCAD presentations
v SISPAD:https://ieeexplore.ieee.org/xpl/conhome/1000675/all-proceedings
v IEDM : https://www.ieee-iedm.org/
v IWCN https://www.iwcn.info/home
v SISC https://www.ieeesisc.org/
v ESSDERC : https://ieeexplore.ieee.org/xpl/conhome/1000710/all-proceedings
v DRC : https://www.mrs.org/drc-2023
v VLSI : https://www.vlsisymposium.org/
• The following book is an excellent overview of TCAD
D. Esseni, C. Jungemann, J. Lorenz, P. Palestri, E. Sangiorgi, L. Selmi, "Technology Computer Aided Design", in Guide to State-of-the-Art Electron Devices, Publisher: Wiley, pp. 97-106, 2013, ISBN 978-D. Esseni, C. Jungemann, J. Lorenz,
Contact
If you have ideas that you would like to have considered by this committee (e.g. a new workshop, aspecial issue, topics for special sessions, etc.) please contact any current committee member. If you would like to volunteer on the committee, please contact the committee chair.
Technology Computer Aided Design Committee Chair
Technology Computer Aided Design Committee Members
Jing Guo is currently a professor in Department of Electrical and Computer Engineering at University of Florida, Gainesville, FL, USA. His research work mainly focuses on modeling, simulation, and design of nanoscale electronic devices. His group has extensively explored device physics, assessed performance potentials, and developed new device concepts for nanoscale transistors based on carbon nanotubes, graphene, 2D materials and topological insulators, and memory cells based on ferroelectric materials. His group has developed efficient simulation methods for quantum-transport-based device simulations, and physics-based models for nanoscale transistors. More recently, his group has contributed to simulation of interconnects based on topological insulator materials and semiconductor-based quantum computing devices. He has also developed and contributed to some widely used simulation tools deployed on the nanoHUB, such as CNTbands. Jing Guo received his B.S. (1998) and M.S. (2000) degrees from Shanghai Jiao Tong University and Ph.D. degree in Electrical Engineering from Purdue University (2004). He served in the technical program committee of the International Device Research Meeting (IEDM) and Device Research Conference (DRC). He also serves as an associate editor of Nano-Micro Letters. He coauthored a book “Nanoscale Transistors: Device Physics, Modeling, and Simulation.” Published by Springer.
Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys. Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping. Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents. He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.
Susanna Reggiani is Associate Professor at the Faculty of Engineering of the University of Bologna, Italy. She received the Ph.D. degree in Electrical Engineering from the University of Bologna in 2001. Since 2001 she is with the Department of Electronics and with Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Her scientific activity has been devoted to the physics, modeling and characterization of electron devices, with special emphasis on transport models in semiconductors. Since 2007 she has been involved in Projects dealing with the TCAD analysis of power MOSFETs, modeling and characterization of hotcarrier stress degradation, modeling of package influences on high-voltage semiconductor FETs, TCAD study of the reliability of GaN-on-Si HEMTS. She is currently involved in European Projects on the development of physically-based models for SiC-based power devices and Smart Power integrated devices.
