Compound Semiconductor Devices and Circuits Committee

Matteo Meneghini received his PhD in Electronic and Telecommunication Engineering (University of Padova), working on the optimization of GaN-based LED and laser structures. He is now associate professor at the Department of Information Engineering at the University of Padova. His main interest is the characterization, reliability and modeling of compound semiconductor devices (LEDs, laser diodes, high electron mobility transistors), electronic and optoelectronic components, solar cells. Within these activities, he has published more than 400 journal and conference proceedings papers. He has given invited and tutorial talks to several conferences, including IEEE-International Electron Device Meeting (IEDM), IEEE-International Reliability Physics Symposium (IRPS), International Workshop on Nitride Semiconductors (IWN), International Conference on Nitride Semiconductors (ICNS), Photonics West. He is/has been sub-committee member for relevant conferences in the field of electronics (IEEE-IEDM, IEEE-IRPS, ESREF, IWN, ESSDERC) and sub-committee chair for IEEE-IRPS and ESREF.

Srabanti Chowdhury is the Willard and Inez Kerr Bell Faculty Scholar associate professor of Electrical Engineering (EE) at Stanford and Materials Science and Engineering (by courtesy). She is a senior fellow at the Precourt Institute of Energy at Stanford. Her research focuses on the wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy-efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamonds for various active, and passive electronic applications, particularly thermal management. She received her M.S. and Ph.D. in Electrical Engineering from the University of California, Santa Barbara. She received several early career awards including DARPA Young Faculty Award, NSF CAREER, and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She is a senior member of IEEE and an alumnus of NAE Frontiers of Engineering. She received the Alfred P. Sloan fellowship in Physics in 2020. She serves the program committee of several IEEE conferences including IRPS and VLSI Symposium, and the executive committee of IEDM.

NG Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications. Since joining the Nanyang Technological University (NTU) Singapore in the School of EEE in 1995, he has held several key appointments including Head of the Microelectronics Division, Founding Programme Manager of the MMIC Design Centre at the Temasek Laboratories@NTU (TL@NTU) and Director of the Silicon Centre of Excellence (Si COE). He is also the co-founder of DenseLight Semiconductor Pte Ltd. Which is a NTU spin-off company. Currently, he holds joint appointment with the A*Star Institute of Microelectronics serving as the Centre Director of the National GaN Technology Centre (NGTC). He also holds concurrent appointments as the Programme Director of the Centre for Microsystem Technologies (CMT) at the Temasek Laboratories@NTU and the Director of the Centre for Micro- and NanoElectronics (CMNE) in the School of EEE. His current research specializations include (1) Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) and (2) III-V compound semiconductor devices for high-frequency and Monolithic Microwave Integrated Circuit (MMIC) applications . He has authored and co-authored more than 300 international journal and conference papers and delivered plenary and invited talks at several international conferences. He holds two granted patents and 5 filed patents. Currently, he serves as the member of the IEEE Electron Device Society Board of Governors, Editor of the IEEE Journals of Electron Device Society (JEDS) and Editorial Board Member of the open access journal Electronics. He also serves in the Steering Committee of the 2023 Electron Devices Technology and Manufacturing (EDTM). In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers. In 1994, he received the TRW Roll of Honor award on the Independent R&D project on Millimeter-Wave Power Devices. In 2007, he was awarded the prestigious Singapore’s Defense Technology Prize for his outstanding technological contributions in MMIC R&D.

Biography: Prof. Mayank Shrivastava is a faculty member at the Indian Institute of Science, Bangalore, and co-founder of AGNIT Semiconductors Pvt. Ltd. He is also instrumental in setting up a 300 Crore worth GaN prototyping Fab and leading a national effort on 2D material’s technology hub. He received his Ph.D. degree from the Indian Institute of Technology Bombay (2010). For his Ph.D. work, he received Excellence in Research award and the Industrial Impact award from IIT Bombay in 2010. He is among the first recipients of the Indian section of the American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). He is also an Editor of IEEE Transactions on Electron Devices. Besides, he is an IEEE Electron Device’s Society (EDS) Distinguished Lecturer and an elected member of the IEEE EDS Board of Governors. He is the recipient of the prestigious DST Swarnjayanti Fellowship (2021), Abdul Kalam Technology Innovation National Fellowship from INAE-SERB (2021), and the VASVIK award (2021). He has received several other national awards and honors of high repute, like the National Academy of Sciences, India, (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award - 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award - 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Ministry of Electronics & Information Technology (MeitY), Young Faculty Fellowship. Besides, he received best paper awards from several international conferences like Intel Corporation Asia academic forum, VLSI design Conference and EOSESD Symposium. Prof Shrivastava broadly works on applications of emerging materials like Gallium Nitride (GaN), atomically thin two-dimensional materials like Graphene and TMDCs, in electronic and electro-optic devices working closer to its fundamental limits (like the ability to handle extreme powers, ability to work at THz like ultra-high frequencies, or ability to compute information in unconventional ways). Currently, his group is developing few-atom thick devices & circuits, GaN-based ultra-high-power devices with high reliability, and devices/circuits for operation at THz frequencies. Besides, his group also works on developing novel ESD and High Voltage device concepts in advanced CMOS nodes. He held visiting positions in Infineon Technologies, Munich, Germany, from April 2008 to October 2008 and again from May 2010 to July 2010. He worked for Infineon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; Intel Corp, Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined the Indian Institute of Science as a faculty member in the year 2013. Prof Shrivastava’s work has resulted in over 200 peer-reviewed publications (47 of these papers are in IRPS and IEDM, the two most prestigious conferences of IEEE EDS, and around 100 are in journals such as IEEE T-ED) and 47 patents. Most of these patents are either licensed by semiconductor companies or are in use in their products. More details are available at https://faculty.dese.iisc.ac.in/mayank/

Jun Suda received the B.E. (1992), M.E. (1994) and Ph. D. (1997) degrees from Kyoto University. From 1992 to 1997, he worked on molecular-beam epitaxy (MBE) and structural and optical characterization of ZnMgSSe strained quantum well structures for short-wavelength optoelectronics. In 1997, he began research on group-III nitrides (III-Ns) and SiC for electron device applications as a Research Associate at Kyoto University. Since 2017, he has been a Professor at Department of Electronics, Nagoya University. He is a Director of Transformative Electronics Facilities (C-TEFs) at Nagoya University. He has authored or co-authored over 300 publications in peer-reviewed journals and international conferences. His research activity includes growth, characterization, process technologies, power devices and high-frequency devices of group-III nitrides and related materials. He is a Fellow of The Japanese Society of Applied Physics (JSAP).

Dr. Shireen Warnock is a technical staff member in the RF Technology Group at MIT Lincoln Laboratory. Her research interests include III-V materials systems, device characterization, and reliability.

Prior to joining the Laboratory, Shireen was a graduate student at the Massachusetts Institute of Technology (MIT), where her research focused on the dielectric reliability of gallium nitride metal-insulator-semiconductor high electron mobility transistors for power applications.

Dr. Warnock has authored or co-authored a number of journal and conference publications in the areas of gallium nitride device reliability. She currently serves on the Wide Bandgap sub-committee and the Management Committee for the IEEE International Reliability Physics Symposium.

She received BS, MEng, and PhD degrees in electrical engineering from the Massachusetts Institute of Technology.