2017 Archived Content
Volume 38, Issue 12 (December 2017)
- Comparative Analysis of Semiconductor Device Architectures for 5 nm node and Beyond
- A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory
- Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate
- Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN / AlGaN / GaN Heterostructures
- Liquid Droplet for Motion Sensing
- Implementing p-bits with Embedded MTJ
Volume 38, Issue 11 (November 2017)
- Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates
- Low-Frequency Noise in IIIV Nanowire TFETs and MOSFETs
- Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
- Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor
- Line Resistance Reduction in Advanced Copper Interconnects
Volume 38, Issue 10 (October 2017)
- High-Performance of Al Nanoparticle Enhanced 4H-SiC MSM Photodiodes for Deep Ultraviolet Detection
- 500 C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
- Stable Thin-Film Reference Electrode on Plastic Substrate for All-Solid-State Ion-Sensitive Field-Effect Transistor Sensing System
- Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
Volume 38, Issue 9 (September 2017)
- Natural Local Self-Boosting Effect in 3D NAND Flash Memory
- Perovskite solar cells on paper and the role of substrates and electrodes on performance
- Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO
- Monolithic Three-Dimensional 65-nm CMOS-Nanoelectromechanical Reconfigurable Logic for Sub-1.2-V Operation
- Intrinsic speed limit of negative capacitance transistors
Volume 38, Issue 8 (August 2017)
Volume 38, Issue 7 (July 2017)
- Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon
- The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs
- GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics
- Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS
- Flexible Ammonia Sensor Based on PEDOT:PSS/Silver Nanowire Composite Film for Meat Freshness Monitoring
Volume 38, Issue 6 (June 2017)
Volume 38, Issue 5 (May 2017)
Volume 38, Issue 4 (April 2017)
Volume 38, Issue 3 (March 2017)
Volume 38, Issue 2 (February 2017)
- Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET
- Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
- Realization of High Color Uniformity for Phosphor-Converted White Light-Emitting Diodes Through a Stamp-Printed Phosphor Coating
- Modeling the Effect of Interface Roughness on the Performance of Tunnel FETs
- A Spintronic Voltage-Controlled Stochastic Oscillator for Event-Driven Random Sampling
Volume 38, Issue 1 (January 2017)
- FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits
- Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers
- Saturation Behavior for a Comb-Like Light-Induced Synaptic Transistor
- High-Performance Depletion/Enhancement-ode $beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
- Performance of Topological Insulator Interconnects