Lastest Issue: Table of Contents (TOC)
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- Front Cover
- IEEE Electron Device Letters Publication Information
- Table of Contents
- Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection
- Unveiling the Vulnerability of Oxide-Breakdown-Based PUF
- Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr3 Perovskite Nanocrystals
- Graphene Quantum Dots Enhanced Graphene/Si Deep Ultraviolet Avalanche Photodetectors
- Mode-Switchable Localized Surface Plasmon Resonator for W/D Dual-Band CMOS Oscillator
- Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering
- Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation
- First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications
- 2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination
- High Figure-of-Merit Film Bulk Acoustic Wave Resonator Based on Al0.87Sc0.13N Film Prepared Using a Novel Dual-Stage Method
- Optimal Design of 100–2000 V 4H–SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms
- Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon
- Compact and High Steep Skirts Hybrid Heterogeneous Integrated N77 Full Band BAW Filter Based on Band-Stop Theory
- Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes With Bandgap Gradient Multi-Layer Heterojunction
- Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs
- Scaling Effects on Memory Characteristics of Ferroelectric Field-Effect Transistors
- Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
- Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications
- Understanding the Degeneration of Neurons From NbOx-Based Threshold Device by an Unhappy Environment
- Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure
- Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂
- The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers
- 8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio
- Atomic Layer Deposition of Al-Doped ZnO Contacts for ZnO Thin-Film Transistors
- BEOL Compatible Ultra-Thin ITO Transistor With Performance Recoverable Capability by in Situ Electrothermal Annealing
- Enhanced Performance and Stability of Atomic Layer Deposited In₂O₃ Transistors With Multi-Function Cation-Doped ZnSnO Layers
- Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer
- GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection
- High-Performance 4H-SiC EUV Photodiode With Lateral p-n Junction Fabricated by Selective-Area Ion Implantation
- Interstitial Alkali Metal Ions Regulating the Phase Distributions Enabling Efficient and Stable Red Perovskite Light-Emitting Diodes
- High-Responsivity van der Waals Schottky Photodiodes Based on Maskless Etched Wafer-Scale Silicon Nanoholes
- High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations
- Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
- Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors
- Non-Zero Power Flow Angles in Surface Acoustic Wave Resonators for Transverse Mode Suppression
- Bias Potential Mediated NO₂ Gas Sensor With NiCo₂O₄ Hollow Micro-Spheres
- Skin-Patchable Electromagnetic Biosensors for Noninvasive and Wireless Glucose Monitoring
- Aluminum Nitride MEMS Resonant Pressure Gauges Without Vacuum Packaging
- Ultrahigh-Sensitivity Coupled Cantilever and Dual-Cavity Piezoelectric Micromachined Ultrasonic Transducers
- Micro-Pirani Pressure Sensor With Operation Range Beyond Atmospheric Pressure Based on Aligned Carbon Nanotube Films
- Experimental Demonstration of a 10-kW-Level G-Band Gyro-TWT
- A MEMS-Type Ionization Vacuum Sensor With a Wide Measurement Range
- MBE-Grown MgO Thin Film Vacuum Ultraviolet Photodetector With Record High Responsivity of 3.2 A/W Operating at 400 °C
- Ultra-Fast True Random Number Generator Based on Ill-Posedness Nucleation of Skyrmion Bags in Ferrimagnets
- Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque
- Tunneling Transistor With a Stacked Floating Electrode for Current Saturation
- Capacitive Synaptor With Overturned Charge Injection for Compute-in-Memory
- EDS Meetings Calendar
- IEEE Electron Device Letters Information for Authors
- Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability
- IEEE Transactions on Electron Devices Table of Contents
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