Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of J-EDS. Click an article title to view within IEEE Xplore.
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- A New Pixel Circuit for Micro-Light Emitting Diode Displays With Pulse Hybrid Modulation Driving and Compensation
- An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected VTH
- Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device
- Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning
- A 65nm Cryogenic CMOS Design and Performance at 4.2K for Quantum State Controller Application
- Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
- The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
- Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
- 2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
- Generating Predictive Models for Emerging Semiconductor Devices
- Enhancement and Expansion of the Neural Network-Based Compact Model Using a Binning Method
- Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board
- A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
- Optimization of Leaky Integrate-and-Fire Neuron Circuits Based on Nanoporous Graphene Memristors
- Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications
- Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment
- An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements
- High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method
- Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes
- Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications
- Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon
- Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations
- A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs
- Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
- Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection
- Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET
- OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
- Energy-Efficient Annealing Process of Ferroelectric Hf0.5Zr0.5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing
- Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach
- Unsupervised Learning in a Ternary SNN Using STDP
- Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector
- Simulation and Optimization of IGZO-Based Neuromorphic System for Spiking Neural Networks
- 1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
- Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
- Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches
- Fiber-Induced Optical Reflective Cavity in a High-Voltage SiC Photoconductive Switch to Improve Photoelectric Responsivity
- Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory
- Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
- Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs
- Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors
- Proposing an Accurate and Fast Optical Batch Inspection Method of Mini-/Micro-LEDs
- Tungsten Trioxide Nanoparticles Modified Cuprous Oxide Film Non-Enzymatic Dopamine Sensor
- Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer
- Machine Learning-Based Compact Model Design for Reconfigurable FETs
- Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2
- Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
- Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress