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Fellow Evaluations
Fellow Evaluation Committee Chair
Albert Z.H. Wang - Fellow - IEEE
Dept. of Electrical and Computer Engineering
Albert Wang is a Professor of Electrical and Computer Engineering at the University of California, Riverside, USA. His research interests cover semiconductor devices, AMS/RF ICs, integrated design-for-reliability, 3D heterogeneous devices and integration, emerging nano devices and circuits. He authored 2 book and more than 320 papers, and holds 16 US patents. He was President for IEEE Electron Devices Society (2014-2015). He is/was editor for seven IEEE journals. He has been an IEEE Distinguished Lecturer for IEEE Electron Devices Society, IEEE Solid-State Circuits Society and IEEE Circuits and Systems Society. His other services include ITRS committee, IEEE 5G Initiative committee, IEEE HIR committee, IEEE Fellow Committee, and chair for IEEE CAS ASPTC and IEEE EDS Fellow committee. He was General Chair (2016) for IEEE RFIC Symposium and is General Chair (2021) for IEEE EDTM conference. He was Program Director of National Science Foundation, USA. He is recipient of IEEE EDS J. J. Ebers Award and IEEE EDS Distinguished Service Award. He is Fellow of National Academy of Inventors, Fellow of IEEE and Fellow of AAAS..
Fellow Evaluation Committee Members
Giovanni Ghione - Editor-in-Chief
Department of Electronics and Telecommunications, Torino, Italy
Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
Edmundo A. Gutierrez-D. - Solid State Device Phenomena; Emerging Technologies and Devices
for Astrophysics, Mexico
Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
Ru Huang - MOS Devices and Technology
Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997. In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
Lecture Topics:
Meikei Ieong - Fellow
Chief Technology Officer
Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.
Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.
He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.
Sarah Kurtz - PV Reliability
MBSE Graduate Group Chair
Dr. Sarah Kurtz received her PhD from Harvard University in Chemical Physics in 1985 with Roy Gordon. She moved directly to the Solar Energy Research Institute (now the National Renewable Energy Laboratory, NREL) where she worked for more than 30 years on a variety of solar energy projects. She is known for her contributions to developing multijunction, GaInP/GaAs solar cells, supporting the Concentrator Photovoltaic (PV) industry, and, more recently, her work with PV performance and reliability. Her work has been recognized with a jointly received Dan David Prize in 2007, the Cherry Award in 2012, and the C3E Lifetime Achievement Award in 2016. In late 2017 she transitioned to a faculty position at the University of California at Merced, while continuing work with NREL.
Bich-yen Nguyen
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
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