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EDL Editor-in-Chief and Editors

  • EDL Editor-in-Chief

    • Tsu-Jae King Liu
       - Editor-in-Chief
      Tsu-Jae King Liu portrait
      University of California at Berkeley
      EECS
      253 Cory Hall #1770
      Berkeley, CA 94720-1770
      USA
      Phone 1:
      +1 510 642 2689

      Fax:
      +1 510 642 2739
      Tsu-Jae King Liu received the B.S., M.S., and Ph.D. degrees in Electrical Engineering from Stanford University. From 1992 to 1996 she was a Member of Research Staff at the Xerox Palo Alto Research Center (Palo Alto, CA). In August 1996 she joined the faculty of the University of California, Berkeley, where she is currently the TSMC Distinguished Professor in Microelectronics, and Chair of the Department of Electrical Engineering and Computer Sciences.
      Dr. Liu's research awards include the DARPA Significant Technical Achievement Award (2000) for development of the FinFET, the IEEE Kiyo Tomiyasu Award (2010) for contributions to nanoscale MOS transistors, memory devices, and MEMs devices, the Intel Outstanding Researcher in Nanotechnology Award (2012), and the Semiconductor Industry Association Outstanding Research Award (2014). She has authored or co-authored close to 500 publications and holds over 90 U.S. patents, and is a Fellow of the IEEE. Her research activities are presently in advanced materials, process technology and devices for energy-efficient electronics.

  • EDL Editors

    • Deji Akinwande
       - Emerging Technologies and Devices; Thin Film Transistors
      Deji Akinwande portrait
      University of Texas at Austin
      ECE
      10100 Burnet Road, Bldg. 160
      Austin, TX 78758
      USA
      Phone 1:
      +1 703 623 6423

      Dr. Deji Akinwande received the PhD degree in Electrical Engineering from Stanford University in 2009, where he conducted research on the synthesis, device physics, and circuit applications of carbon nanotubes and graphene. His Master’s research in Applied Physics at Case Western Reserve University pioneered the design and development of near-field microwave probe tips for nondestructive imaging and studies of materials.

      He is an Endowed Faculty Fellow and Associate Professor at the University of Texas at Austin. Prof. Akinwande has been honored with the 2016 Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE "Early Career Award" in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, the 3M Nontenured Faculty Award, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, and Stanford DARE Initiative. His recent results on silicene have been featured by nature news, Time magazine and was selected among the top 2015 science stories by Discover magazine. His work on flexible 2D electronics was highlighted among the "best of 2012" by the nanotechweb news portal and has been featured on MIT's technology review and other technical media outlets. He is a distinguished lecturer of the IEEE Electron Device Society and an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He co-authored a textbook on carbon nanotubes and graphene device physics by Cambridge University Press, 2011, and was recently a finalist for the Regents' Outstanding Teaching Award, the highest teaching award from the University of Texas System.

      1. Flexible 2D Nanoelectronics: Device Physics, Mechanics and Circuits

      2. Wafer-scale Graphene Growth and Si-CMOS Integration
    • Shoou-Jinn Chang
       - Optoelectronics; Thin Film Transistors
      Shoou-Jinn Chang portrait
      National Cheng Kung University Ministry of Science and Technology
      Electrical Engineering
      Tainan 70101
      Taiwan
      Phone 1:
      +886 6 275757 ext 162391

      Fax:
      +886 6 2761854
      Shoou-Jinn Chang (M’06, SM’10, F’14) was born in Taipei, Taiwan on January 17, 1961. He received the B.S. degree from the National Cheng Kung University (NCKU), Tainan, Taiwan in 1983, the M.S. degree from the State University of New York, Stony Brook in 1985 and the Ph.D. degree from the University of California, Los Angeles (UCLA) in 1989, all in electrical engineering.

      From 1989 to 1992, he was a Research Scientist with Nippon Telegraph and Telephone (NTT) Basic Research Laboratories, Musashino, Japan. He joined the Department of Electrical Engineering, NCKU in 1992 as an Associate Professor, where he was promoted to Full Professor in 1998.

      He serves as the Director of the Institute of Microelectronics, NCKU from August 2008 to July 2011. Currently, he is the Deputy Director of the Advanced Optoelectronic Technology Center, NCKU. He was a Royal Society Visiting Scholar with the University of Wales, Swansea, UK from January 1999 to March 1999, a Visiting Scholar with the Research Center for Advanced Science and Technology, University of Tokyo, Japan from July 1999 to February 2000, a Visiting Scholar with the Institute of Microstructural Science, National Research Council, Canada from August 2001 to September 2001, a Visiting Scholar with the Institute of Physics, Stuttgart University, Germany from August 2002 to September 2002, and a Visiting Scholar with the Faculty of Engineering, Waseda University, Japan from July 2005 to September 2005. He is also a honorary professor with Changchun University of Science and Technology, China. His current research interests include semiconductor physics, optoelectronic devices, and nanotechnology.

      Professor Chang is the recipient of the outstanding research award from the National Science Council, Taiwan in 2004 and 2014. He is a Fellow of SPIE, a Fellow of OSA and a Fellow of IEEE.
    • Zhihong Chen
       - Emerging Technologies and Devices
      Zhihong Chen portrait
      Purdue Universty
      School of ECE
      Birck Nanotechnology Center
      1205 West State St West
      Lafayette, IN 47907-2057
      USA
      Phone 1:
      +1 765 494 0772

      Zhihong Chen received her B.S. degree in physics from Fudan University in 1998, and her Ph.D. degree in physics from the University of Florida in 2003. After two years of postdoctoral research at IBM T.J. Watson research center, she became a research staff member in the Physical Science Department. Her research focused on design and fabrication of high performance carbon based devices and circuits. In 2008, she was appointed as the manager of the Carbon Technology Group at IBM, where she was in charge of evaluating the potential of carbon materials and the development of novel carbon based technologies for commercial applications. Since Oct. 2010, she joined the School of Electrical and Computer Engineering at Purdue University, as an Associate Professor. Her current research interests include understanding physical properties of nano-materials and designing and fabricating novel nanoscale devices and circuits for various applications.
    • Albert Chin
       - Fellow
      Albert Chin portrait
      Thin Film Transistors
      National Chiao Tung University
      Dept. of Electronics Engineering
      Hsinchu Taiwan
      Phone 1:
      +886-3573-1841

      Fax:
      +886-3572-4361
      Lecture Topics: high-Îş Si and Ge CMOS, high-Îş flash memory, ultra-low power green electronic devices, TFT, device-level 3D IC, Si RF devices

      Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982.
      He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore.
      He is a pioneer on low DC-power high-κ CMOS, high-κ Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-κ CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS www.itrs.net
      Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
    • Brian Doyle
       - Emerging Technologies and Devices; Memory Devices and Technology
      Brian Doyle portrait
      Intel Corp
      RA3-232
      Ronler Acres
      Hillsboro, OR 97124
      USA
      Phone 1:
      +1 503 613 2742

      Fax:
      +1 503 613 8964
      Brian Doyle received his B.Sc. degree from Trinity College Dublin (Ireland), and his M.Sc. & Ph.D. degrees from the University of London, Chelsea College (Great Britain). Following a post-doctorate position at the University of London, he worked at Bull S.A. in France on low temperature operation of nMOS circuits, and then transistor reliability before moving to Massachusetts to work for Digital Equipment Corporation on reliability of MOS devices and gate oxide development. Following six years at DEC, he moved to Intel in 1994 where he worked initially investigating the transistor gate stack, then developing scaled transistors, and now examining embedded memories.
      Dr Doyle is the author of more than 100 papers in internationally recognized scientific journals as well as a book chapter in ULSI Devices. He has over 200 US and international patents.
      He has worked in various professional capacities: he has been on the technical committee (reliability) of the International Technology Roadmap for Silicon (ITRS). He has worked at various levels on the technical committees of the International Electron Device Meeting (IEDM), the International Silicon-On-Insulator conference and the Device Research Conference (DRC). He was previously editor of the IEEE Electron Device Letters in the 1990’s.
      Dr Doyle received a SEMI Award for Process and Technology Integration Breakthrough in High-K/Metal Gate in 2013, as well as a further SEMI Award for North America for the implementation of bulk CMOS finFET production in 2015. He also received two Intel Achievement Awards (Intel’s highest award) for work on transistor scaling and for developing Tri-Gate transistors, and as well as numerous internal Intel Divisional Awards.
    • Takashi Egawa
       - Compound Semiconductor Devices
      Takashi Egawa portrait
      Nagoya Institute of Technology
      Research Center for Nano-device and System
      Nagoya, Aichi Japan
      Phone 1:
      +81 52 735 5544

      Fax:
      +81 52 735 5546
      Takashi Egawa received the B.E. and M.E. degrees in electronics from Nagoya Institute of Technology in 1980 and 1982, respectively. From 1982 to 1988, he was engaged in research on high-speed GaAs LSI in Oki Ltd., Tokyo, Japan. He received D.E. degree in electrical and computer engineering from Nagoya Institute of Technology in 1991. In 1991, he joined Nagoya Institute of Technology as a research associate. He became an associate professor in 1993, a professor in 1999 at the Research Center for Micro-Structure Devices, and a professor in 2004 at the Research Center for Nano-Device and System. He is now a professor and director of this center. His current fields of interest are heteroepitaxy of GaN and GaAs by MOCVD and their application to electronic and optical devices. He has authored or co-authored more than 220 publications in international journals. He received the awards from IEE Japan with the Kodaira Memorial Prize in 1991 and from the laser society of Japan in 1996. He also received awards from the Japanese Association for Crystal Growth (JACG) and from the Ministry of Education, Culture, Sports, Science and Technology in 2010. Prof. Egawa is a member of the Japan Society of Applied Physics, the IEE of Japan, and the IEEE Electron Devices Society.
    • Bogdan Govoreanu
       - Memory Devices and Technology
      Bogdan Govoreanu portrait
      IMEC
      Kapeldreef 75
      Leuven B-3001
      Belgium
      Phone 1:
      +32 16 28 13 37

      Fax:
      +32 16 28 18 14
      Bogdan Govoreanu (SM’11, M’04) received his Dipl.-Eng. and M.Sc. degrees in Electronics from the Polytechnic University of Bucharest, Romania, in 1995 and 1996, respectively and his Ph.D. degree in Applied Sciences from the University of Leuven (KU Leuven), Belgium, in 2004, for his research work on tunnel barrier engineering for nonvolatile memory.
      He joined imec Leuven in 2004, where he is presently a Principal Scientist. His research focus is on advanced and emerging memory devices, materials and technologies. His recent research interests extend to various neuromorphic computing areas, including components, machine learning algorithms and systems.
      Dr. Govoreanu has authored or co-authored over 130 papers in peer-reviewed journals and conference proceedings and holds over 10 US and European patents. He has served in the IEDM Technical Program Committee (2012-2013) and, since 2014, in the ESSDERC Technical Program Committee.
    • Edmundo A. Gutiérrez-D.
       - Senior Member
      Edmundo A. Gutiérrez-D. portrait
      Solid State Phenomena; Emerging Technology and Devices
      INAOE
      L. E. Erro Nr. 1
      Tonantzintla, Puebla 72840
      Mexico
      Phone 1:
      +52 222 247 0517

      Fax:
      +52 222 247 0517
      Lecture Topics:  Magneto-quantum conductance effects in mosfets and nano-scaled semiconductor devices, low-temperature electronics, and magnetic sensors.

       Theoretical and experimental research on particle-wave duality conductance properties in semiconductor devices, DC and RF/Power device degradation and circuit reliability.

      Dr. Edmundo A. Gutiérrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
      Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
    • Daewon Ha
       - Silicon and Column IV Semiconductor Devices; Memory Devices and Technology
      Daewon Ha portrait
      Samsung Electronics Co Ltd
      New Memory Lab, San 16 Banwol-Dong Hwasung-City
      Gyeonggi-do 445-701
      Korea
      Phone 1:
      +82 31 208 0699

      Fax:
      +82 31 209 4493
      Daewon Ha received the B.S. and M.S. degrees in electrical engineering from Yonsei University, Seoul, Korea, in 1993 and 1995, respectively, and the Ph.D. degree in electrical engineering and computer science from University of California, Berkeley, USA in 2004.
      In 1995, he joined Samsung Electronics, Co., Ltd., Korea where he was involved in the development of world-first fully working 1 Gb and 512 Mb dynamic random access memory (DRAM) as a process integration engineer. From 2000 to 2004, he conducted research in the field of nano-scale CMOS devices using advanced transistor structures and materials such as ultra-thin silicon body single- and double-gated MOSFET (UTBFET and FinFET). In 2004, he re-joined Samsung Electronics, Co., Ltd., and has been involved in the development of 1 Gb DRAM using 68 nm technology and 64 Mb, 512 Mb, 1 Gb, and 8 Gb phase change random access memory (PRAM). He has published more than 50 technical papers and holds more than 30 issued and pending patents on memory technology. His current research interests are nano-scale CMOS devices, emerging memory technologies and reliability such as phase-change memory and resistive memory, and so on.
      Dr. Ha was a recipient of Best Paper Award from European Solid-State Device Research Conference (ESSDERC) in 1999, and Samsung Best Paper Award (Gold Prize) in 2005. He served as a sub-committee member of the International Electron Devices Meeting (IEDM) from 2010 to 2011, and the International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) from 2008 to 2010.
    • Steve Hall
       - Silicon and Column IV Semiconductor Devices; Thin Film Transistors
      Steve Hall portrait
      University of Liverpool
      Electrical Engineering and Electronics
      Brownlow Hill
      Liverpool L69 3GJ
      UK
      Phone 1:
      +44 151 794 4529

      Fax:
      +44 151 794 4540
      Professor Steve Hall has interests spanning materials characterisation, device physics & innovative device design and gate level circuits. He has about 250 conference and journal papers in these areas including novel measurements and contributions to the understanding of MOS related interfaces and materials quality. He successfully designed and built novel MOS and bipolar devices in silicon for about 20 years. More recently, his work encompasses high permittivity dielectrics, conducting oxides, rectennas for energy scavenging and biologically inspired device/circuit concepts. He was Technical Programme Chair of ESSDERC 2008, guest editor of selected papers in Solid-State Electronics and currently sits on the Steering Committee of ESSDERC/ESSCIRC. He serves on the programme committees of ESSDERC and INFOS, for which he was vice-Chair in 2009 and is a member of the Steering Committee from 2009. He was co-organiser of a NATO Advanced Workshop in 2007 and co-editor of proceedings. He was active in the EU Networks of Excellence FP6 SINANO, FP7 NANOSIL and managed WP4 in the EU FP5 project SIGMOS. He participated in the major FP6 Integrated Project PULLNANO and is a founder member of the European SINANO Institute, where he chairs the General Assembly. He serves on the Editorial Advisory Board of Solid-State Electronics. He is a Fellow of the IET, a Chartered Engineer and a Senior Member of IEEE. He was Head of his University Department from 2001 to 2009 and is currently the Director of Research.
    • Steven J. Koester
       - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
      Steven J.  Koester portrait
      University of Minnesota
      ECE
      200 Union St SE
      Minneapolis, MN 55455
      USA
      Phone 1:
      +1 612 625 1316

      Fax:
      +1 612 625 4583
      Steven J. Koester (M’96–SM’02) was born in Defiance, Ohio, in 1966. He received the B.S.E.E. and M.S.E.E. degrees from the University of Notre Dame in 1989 and 1991, respectively. He received his Ph.D. in 1995 from the University of California, Santa Barbara where he performed research on quantum devices in the InAs/AlSb heterostructure system. In 1995, he joined the IBM T. J. Watson Research Center, in Yorktown Heights, New York, as a postdoctoral researcher. From 1997 to 2006 he was a research staff member at IBM and performed research on a wide variety of SiGe devices including strained Si/SiGe MODFETs, MOSFETs and high-speed photodetectors. From 2006-2010 he served as manager of Exploratory Technology at IBM Research where his team investigated novel devices and 3D integration solutions for post 22-nm-node CMOS technology. Since 2010, he has been a Professor of Electrical and Computer Engineering at the University of Minnesota in Minneapolis, Minnesota where his research focuses on nanostructured electronic and photonic devices. Dr. Koester has authored or co-authored over 150 technical publications and conference presentations, and holds 32 United States patents.
    • Kelin J. Kuhn
       - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
      Kelin J. Kuhn portrait
      Carnegie Mellon University
      Materials Science and Engineering
      210 Bard Hall
      Ithaca, NY 14853
      USA
      Kelin J. Kuhn (M’78–SM’04-F’11) received the B.S. degree in electrical engineering from the University of Washington, Seattle, in 1980 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Palo Alto, CA, in 1985. Prior to 1997 she was a tenured Associate Professor with the Department of Electrical and Computer Engineering, University of Washington. In 1997, she joined Intel Corporation, Hillsboro, OR, working on the Intel 0.35-μm process technology and was involved in Intel manufacturing process technology development for the 0.35-μm, 130-nm, 90-nm, 45-nm, 22-nm, 14-nm, and 7nm technology nodes. She retired from Intel in 2014 with the title of Intel Fellow and Director of Advanced Device Technology in the Components Research Group of Intel Corporation. She is presently the Mary Shepard B. Upson Visiting Professor in the Department of Materials Science and Engineering at Cornell University. She is the author of more than 100 technical papers in electronics and photonics, as well as the author of the textbook Laser Engineering (Prentice-Hall, 1997) and an editor (in partnership with Prof. T.J.K. Liu) of the book CMOS and Beyond: Logic Switches for Terascale Integrated Circuits (Cambridge, 2015). Dr. Kuhn is an IEEE Fellow, recipient of the IEEE Frederik Philips Award (2016), the IEEE Paul Rappaport Award (2013), and two Intel Achievement Awards (Intel’s highest technical award) one 2006 (for HiK-MG) and one in 2008 (for key contributions to Intel’s 22nm TriGate technology). She is also a past recipient of the NSF Presidential Young Investigator award (1991-7).
    • Kei May Lau
       - Optoelectronics
      Kei May Lau portrait
      Hong Kong University of Science and Technology
      ECE
      Clear Water Bay, Kowloon, Hong Kong
      Phone 1:
      +852 2358 7049

      Kei May Lau received the B.S. and M.S. degrees in physics from University of Minnesota, Minneapolis, and the Ph.D. Degree in Electrical Engineering from Rice University, Houston, Texas.

      She was a Senior Engineer at M/A-COM Gallium Arsenide Products, Inc., where she worked on epitaxial growth of GaAs for microwave components and development of mm-wave devices. Two years later, she joined the faculty of the Electrical and Computer Engineering Department at the University of Massachusetts/Amherst. She initiated metalorganic chemical vapor deposition (MOCVD), compound semiconductor materials and devices programs at UMass. Her research group performed studies on heterostructures, quantum wells, strained-layers, III-V selective epitaxy, as well as high-frequency and photonic devices. Professor Lau spent her first sabbatical leave in 1989 at the MIT Lincoln Laboratory and worked with the Electro-optical Devices Group. She developed acoustic sensors at the DuPont Central Research and Development Laboratory in Wilmington, Delaware during her second sabbatical leave. She has been a Chair Professor at the Hong Kong University of Science and Technology (HKUST) since the summer of 2000. She is a Fang Professor of Engineering, with effort in III-V and wide band-gap semiconductor materials and devices.

      Professor Lau is a Fellow of the IEEE, a recipient of the US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Hong Kong Croucher Senior Research Fellowship (2008). She served on the IEEE Electron Devices Society Administrative Committee and was an Editor of the IEEE Transactions on Electron Devices (1996-2002). She also served as an Associate Editor for the Journal of Crystal Growth. She is an Associate Editor of the Applied Physics Letters.
    • B. Gunnar Malm
       - Solid-State Power and High Voltage Devices; Silicon and Column IV Semiconductor Devices
      B. Gunnar Malm portrait
      KTH-Royal Institute of Technology
      ICT School
      Isafjordsgatan 22, Box 229
      Kista 164 40
      Sweden
      Email 1:
      gunta@kth.se

      Bengt Gunnar Malm (M’98 - SM’10) was born in Stockholm, Sweden, in 1972. He received the M.S. degree in engineering physics and radiation science from Uppsala University, Uppsala, Sweden, in 1997. He was also an intern at ABB AB, Sweden, in 1996. In 1997 he joined the Royal Institute of Technology (KTH) Stockholm, where his thesis work focused on high-speed silicon-germanium (SiGe) transistors. He received the Ph.D. degree in solid-state electronics in 2002. In 2011 he received the Docent degree also from KTH. Currently, he is an Associate Professor in integrated devices and circuits, and serves as director of undergraduate studies at the Department of Electronics, KTH. His research interests include semiconductor and spintronic device physics, characterization with emphasis on noise, fluctuations and variability, and also TCAD modeling. His recent work includes silicon-carbide (SiC) integrated circuits for extreme environments and phase noise in microwave spintronic oscillators. He has been the main advisor for 2 PhD students and has published or co-authored more than 90 scientific papers in international journals and conferences. He has coauthored 2 book chapters, a number of invited conference papers and tutorials, and has one granted US patent. Dr. Malm is a member of the ESSDERC TPC and co-chair for 2011 event in Helsinki. He was an organizer of ISTDM 2010 and ULIS 2014, and the 2012 general chair for the biannual GigaHertz Symposium and Swedish Radio and Microwave Days. He has an active interest in sustainability issues and served on the KTH Sustainability Council (KTH-S) 2011-2015.
    • Omar Manasreh
       - Optoelectronics, Display, Imaging
      Omar Manasreh portrait
      University of Arkansas
      Electrical Engineering
      3217 Bell Engineering Center
      Fayetteville, AR 72701
      USA
      Phone 1:
      +1 479 575 6053

      Prof. Omar Manasreh received his B. Sc. degree from the University of Jordan in 1976, M. Sc. degree from the University of Puerto Rico, Rio Pierdras, Puerto Rico in 1980, and his Ph. D. degree from the University of Arkansas, Fayetteville, in 1985. He joined the US Air Force as an Electronic Engineer between 1987-1999, where he worked on several projects related to electronic and optoelectronic applications of III-V semiconductor materials. In late 1999 he joined the department of Electrical and Computer Engineering, University of New Mexico as a research professor, where he established two research labs that are fully funded externally with several graduate and undergraduate students being involved. He joined the department of Electrical Engineering at the University of Arkansas in June 2003 where he established a state-of-the-art optoelectronic research lab funded DoD, NASA, and NSF. Omar received several awards including the Science and Technology Achievement Awards presented by the Air Force Materiel Command at Wright-Patterson Air Force Base and Aubrey E. Harvey Award (Sigma Xi) presented by the University of Arkansas. He was a National Research Council Fellow during 1988-89. He has published over 190 technical papers published in preeminent applied physics and device technical journals including Electron device Letters, presented over 80 papers at national and international meetings and over 60 invited talks. He organized and edited several symposia and proceedings for the Materials Research Society, Electrochemical Society, and European Materials Research Society. He was the editor-in-chief for the following book series: 1) “Optoelectronic Properties of Semiconductors and Superlattices” published by Taylor and Francis with 21 volumes. 2) “Semiconductor Materials and Devices” published by Artech House with seven volumes. 3) “Nanoscience and Technology” published by McGraw-Hill with 6 volumes. He authored the following textbooks: 1) "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors" (Artech House, Boston, MA, 1993). 2) “Semiconductor heterojunctions and nanostructures” (MicGraw-Hill, NY 2005). 3) “Introduction to nanomaterials and devices” (Wiley, NY, 2012). Omar is a senior member of IEEE, a member of the American Physical Society and the Materials Research Society. His current research is focused on the experimental and theoretical optoelectronic properties of III-V semiconductors, nanomaterials, and related devices including: 1) Multi-color photodetectors based on III-V semiconductor nanomaterial systems. 2) Colloidal growth of semiconductor nanocrystals and metallic nanoparticles, which are being investigated for their optoelectronic applications. 3) Photovoltaic devices based on nanomaterials including coupled nanocrystals/nanotubes. 4) Nanoscale semiconductor materials for optoelectronic components including emitters. 5) Plasmonic effect on the device performance. 6) Radiation effect on semiconductor materials and devices. His optoelectronic research lab is equipped with various spectrometers covering the spectral range from 0.18 – 1000 mm, which are configured to performed various optical measurements, such as absorption, transmission, Raman scattering, photoluminescence, quantum efficiencies, energy conversion efficiencies, and photoconductivity. The lab houses a class 100 clean room with various wet and dry etching (ICP-RIE) equipment capable of fabricating devices with dimensions on the order of sub-micron. His recent teaching includes Electronics I, Semiconductor Nanostructures I and II and Introduction to nanomaterials and devices.
    • Kevin Matocha
       - Solid-State Power and High Voltage Devices; Compound Semiconductor Devices
      Kevin Matocha portrait
      Monolith Semiconductor Inc
      408 Fannin Ave
      Round Rock, TX 78664
      USA
      Phone 1:
      +1 518 986 0696

      Kevin Matocha (MO95NSMO13) received the B.S. degree in electrical engineering from Louisiana Tech University, Ruston, LA, in 1995, and the M.S. and Ph.D. degrees in electrical engineering from the Rensselaer Polytechnic Institute (RPI), Troy, NY, in 1998 and 2003, respectively. His doctoral work examined the capabilities of GaN MOSFETs for high-voltage switching applications. From 2000 to 2011, he was with the General Electric Global Research Center, developing wide-bandgap devices, including harsh environment sensors and power devices using silicon carbide and gallium nitride. He was a member of the team who received the 2009 Robert N. Hall Award, and was awarded the 2010 Albert Hull Award for his early career research. In 2011, he joined SemiSouth as Vice President of Product Development, commercializing SiC power devices including high-voltage SiC Schottky diodes and SiC JFETs. In 2012, he co-founded Monolith Semiconductor Inc., Austin, TX, a supplier of SiC Schottky diodes and SiC MOSFETs for power electronics applications, where he serves as President. His technical interests focus on the performance and reliability of SiC MOS devices. Dr. Matocha has published 80 journal and conference articles, has authored one book chapter, and has been awarded 25 patents.
    • Hidenori Mimura
       - Vacuum Electron Devices
      Hidenori Mimura portrait
      Shizuoka University
      Research Institute of Electronics
      3-5-1 Johoku Nanka-ku
      Hamamatsu
      432-8011
      Japan
      Phone 1:
      +81 53 478 1315

      Hidenori Mimura received B.E, M.E and Ph.D degrees in electronics from Shizuoka University, 1979, 1981 and 1987, respectively. He joined Nippon Steel Corporation in 1987, and the ATR Optical Radio Communications Research Laboratories in 1994. From 1996 to 2003, he was an associate professor in the Research Institute of Electrical Communications, Tohoku University. In 2003 he moved to the Research Institute of Electronics, Shizuoka University, and since then he has been a professor in the Research Institute of Electronics, Shizuoka University. Since 2006 he has been a director of the Research Institute of Electronics, Shizuoka University. He is an honorary professor of St. Petersburg State Institute of Technology, and an adjunct professor of University Indonesia. He has published more than 210 papers. He is a leading researcher of Shizuoka University. He has been engaged in vacuum nanoelectronics, and imaging devices. Prof. Mimura is a member of the Japan Society of Applied Physics, the Institute of Electronic, Information and Communication Engineering, the Institute of Image Information and Television Engineering, the Vacuum Society of Japan, the Society for Information Display and the IEEE Electron Devices Society.
    • Jeong-Sun Moon
       - Compound Semiconductor Devices; Emerging Technologies and Devices
      Jeong-Sun Moon portrait
      HRL Laboratories, LLC
      3011 Malibu Canyon Road
      Malibu, CA 90265-4797
      USA
      Jeong-Sun Moon (F’14) received the B.S and M.S. degrees from Seoul National University, Korea, and the Ph.D. degree from Michigan State University, East Lansing, MI, in 1995, where he studied electron quantum transport in nanoscale devices and software-defined digital transceivers. In 1995, he joined Sandia National Laboratories as a postdoctoral scholar, where he worked on III-V semiconductor nanoscale devices including 2D-2D resonant tunneling transistors. In 2000, he joined HRL Laboratories, Malibu, CA, and he is a Senior Research Scientist at HRL Laboratories. He has managed numerous research contracts from DARPA, ONR, NRO, JPL and NASA. His research focuses on emerging materials/devices and RF/high-speed devices/circuits including GaN, InP, GaSb, SiGe, Graphene, and phase-change material, as well as optical devices. He has published two book chapters and has authored or co-authored more than 100 papers and holds 20 patents. He also gave numerous invited conference and workshop presentations and tutorials/ short courses. His work was featured in various magazines including IEEE Spectrum, Compound Semiconductor, NASA Tech Briefs, Microwave Journal, and MIT Technology Review. He served on the Program Committee for the Device Research Conference. He is a member of Technical Program Committee in Microwave Theory and Techniques Society (MTT-S).


      Dr. Moon is a Fellow of the IEEE and a recipient of the George Abraham Outstanding Paper Award from Government Microcircuit Applications and Critical Technology Conference (GOMACTech) in 2014, and the NASA SPACE ACT Board Award in 2009.
    • Victor Moroz
       - Silicon and Column IV Semiconductor Devices; Solid-State Device Phenomena
      Victor Moroz portrait
      Synopsys Inc.
      690 East Middlefield Rd
      Mountain View, CA 94043
      USA
      Phone 1:
      +1 650 584 5458

      Fax:
      +1 650 584 1366
      Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys.

      Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping. Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents. He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.
    • Chandra Mouli
       - Memory Devices and Technology; Solid State Device Phenomena
      Chandra Mouli portrait
      Micron technology Inc.
      8000 S. Federal Way R&D MS 1-720
      Boise, ID 83706
      USA
      Phone 1:
      +1 208 368 2092

      Fax:
      +1 208 368 2548
      Chandra Mouli is with Micron Technology Inc., Boise, ID, USA. He is currently Director of Device Technology with responsibilities in the area of advanced device characterization, reliability analysis, test structure design/layout, process & device modeling for all technologies under development in R&D.

      He received his undergraduate degree in Physics and MSEE from the Indian Institute of Science (IISc), Bangalore, India and Ph.D (EE) from the University of Texas at Austin. He was with Texas Instruments for couple of years before joining UT/Austin. His interests include semiconductor devices and process technology for advanced memory, opto-electronic devices, exploratory research in the area of new materials and device structures. He has more than hundred issued patents and several pending in various areas of semiconductor devices and process – in advanced memory, novel devices and image sensor technology. He has served in the technical committees for various conferences, including IEDM, IRPS and SISPAD. He has also served in the review committees for NSF and SRC. He is currently a member of the scientific advisory board in SRC’s focus center programs and is a member of the ITRS technical working group.
    • Azad Naeemi
       - Emerging Technologies and Devices; Materials, Processing, and Packaging
      Azad Naeemi portrait
      Georgia Institute of Technology
      791 Atlantic Dr
      Atlanta, GA 30332
      USA
      Azad Naeemi (S’99-M’04-SM’04) received the B.S. degree in electrical engineering from Sharif University, Tehran, Iran, in 1994, and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology (Georgia Tech), Atlanta, in 2001 and 2003, respectively.

      He worked as a research engineer with the Microelectronics Research Center, Georgia Tech, from 2003 to 2008. In 2008, he joined the School of Electrical and Computer Engineering faculty at Georgia Tech, where he is currently an associate professor. His research crosses the boundaries of materials, devices, circuits and systems, investigating integrated circuits based on conventional and emerging nanoelectronic and spintronic devices and interconnects. As silicon field-effect transistors and copper/low k interconnects approach their scaling limits, this research aims at finding evolutionary and revolutionary approaches to sustain the growth of the computing power of microchips.

      Dr. Naeemi serves as the leader of the beyond-CMOS benchmarking research at the Semiconductor Research Corporation (SRC) Nanoelectronics Research Initiative (NRI) and the Semiconductor Technology Advanced Research Network (STARnet). Dr. Naeemi is the recipient of the IEEE Electron Devices Society (EDS) Paul Rappaport Award for the best paper that has appeared in IEEE Transactions on Electron Devices during 2007. He has also received an NSF CAREER Award, an SRC Inventor Recognition Award, and several best paper awards at international conferences. Dr. Naeemi is a recipient of Richard M. Bass/Eta Kappa Nu Outstanding Teacher Award determined by the vote of the Georgia Tech ECE senior class.
    • Lis K. Nanver
       - Silicon and Column IV Semiconductor Devices; Materials, Processing and Packaging
      Lis K. Nanver portrait
      University of Twente
      Faculty of Electrical Engineering Mathematics and Computer Science
      Building 15: Carré 2635
      PO Box 217
      Enschede 7500 AE
      The Netherlands
      Phone 1:
      +31 53 489 2754

      Lis K. Nanver (M’80) received a masters degree in physics from the University of Aarhus, Denmark, in 1979, and a docteur ingenieur degree in physics applied to telecommunications from the Ecole Nationale Supérieure des Télécommunications (ENST), Paris, France, in 1982, on the subject of charge-coupled device simulations. She received a Ph.D. degree in electrical engineering from Delft University of Technology, The Netherlands, in 1987. In her doctoral work she developed a medium frequency BiFET IC-process and made it available to designer groups.

      In 1987 she continued her research on silicon devices and integration processes in DIMES, TU Delft, from 2001-2015 as professor heading the Silicon Device Integration Group. Mainly in cooperation with either RF/microwave or smart sensor IC designer groups she developed several new processing techniques. Her silicon-on-glass substrate-transfer process allowed true two-sided device contacting and was a basis for investigations leading to a better understanding of the electrothermal behavior of bipolar transistors. She has pioneered several ultrashallow diode technologies involving techniques such as laser annealing, Al-mediated solid-phase epitaxy and chemical-vapor deposition (CVD). The research on pure-dopant CVD processes for creating extremely shallow diodes (PureB for Si and PureGaB for Ge devices) has resulted in several leading-edge applications such as high-linearity silicon-on-glass varactor diodes, Si photodiode detectors for low penetration-depth beams and low-leakage Ge-on-Si photodiodes. Prof. Nanver is at present continuing her research as guest professor at University Twente, Enschede, The Netherlands and Aalborg University, Aalborg, Denmark.

      She has published more than 250 journal and conference articles, has authored two book chapters, and has been awarded 4 patents. Prof. Nanver has served on the committees of BCTM and ESSDERC. The work of her group has received prizes including the 2010 IEDM Roger Haken Award and the 2011 I2MTC Best Paper Award.

    • Wai Tung Ng
       - Solid-State Power and High Voltage Devices
      Wai Tung Ng portrait
      University of Toronto
      ECE
      10 King's College Road
      Toronto, ON M5S 3G4
      Canada
      Phone 1:
      +1 416 978 6249

      Fax:
      +1 416 971 2286
      Biography:  Wai Tung Ng is a Professor at The Edward S. Rogers. Sr. Department of Electrical & Computer Engineering, University of Toronto. His current research work covers smart power semiconductor devices and fabrication processes. In particular, his main focus is in the development of power management circuit, integrated SMPS (Switched-Mode Power Supplies), integrated class D audio power amplifiers. After he obtained his Ph.D. degree from the University of Toronto in 1990, Prof. Ng joined Texas Instruments, Dallas TX to work on LDMOS power transistors for automotive applications. He started his academic career with the University of Hong Kong in 1992. In 1993, Prof. Ng joined the University of Toronto and established the Smart Power Integration & Semiconductor Devices Research Group. He was promoted to associate and full professor in 1998 and 2008, respectively. He has extensive experience in working with the industry to modify standard CMOS te chnology for smart PIC and RF applications. Prof. Ng is the director of the Toronto Nanofabrication Centre, an open access research facility at the University of Toronto. Prof. Ng has also been serving as an associate editor for IEEE Electron Device Letters since 2009.
    • Adelmo Ortiz-Conde
       - Senior Member
      Adelmo  Ortiz-Conde portrait
      Silicon and Column IV Semiconductor Devices; Thin Film Transistors
      Universidad Simon Bolivar
      Dpto. de Electronica
      Apartado Postal 89000
      Caracas 1080
      Venezuela
      Phone 1:
      +58-212-9064010

      Fax:
      +58-212-9064025
      Adelmo Ortiz-Conde (S’82, M'85, SM'97) was born in Caracas, Venezuela, on November 28, 1956. He received the professional Electronics Engineer degree from Universidad Simón Bolívar (USB), Caracas, Venezuela, in 1979 and the M.E. and Ph.D. from the University of Florida, Gainesville, in 1982 and 1985, respectively. His doctoral research, under the guidance of Prof. J. G. Fossum, was on the Effects of Grain Boundaries in SOI MOSFET’s.
      From 1979 to 1980, he served as an instructor in the Electronics Department at USB. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. Since 1987 he returned to the Electronics Department at USB where he was promoted to Full Professor in 1995. He was on sabbatical leave at Florida International University (FIU), Miami, from September to December 1993, and at University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998. He also was on sabbatical leave at “Centro de Investigaciones y Estudios Avanzados” (CINVESTAV) National Polytechnic Institute (IPN), Mexico City, Mexico, from October 2000 to February 2001.
      He has coauthored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (2012 Springer reprint of the original 1st ed. 1998, http://dx.doi.org/10.1007/978-1-4615-5415-8 ), over 170 international technical journal and conference articles (including 18 invited review articles). His present research interests include the modeling and parameter extraction of semiconductor devices.
      Dr. Ortiz-Conde is an EDS Distinguished Lecturer and the Chair of IEEE’s CAS/ED Venezuelan Chapter. He is editor of IEEE Electron Device Letters in the area of Silicon Devices and Technology. He was the Region 9 Editor of IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of various technical journals: Microelectronics and Reliability, “Universidad Ciencia y Tecnología” and “Revista Ingeniería UC”. He regularly serves as reviewer of several international journals and he was the General Chairperson of the first IEEE International Caribbean Conference on Devices, Circuits, and Systems (ICCDCS) in 1995, Technical Chairperson of the second, fourth and fifth editions of this conference in 1998, 2002 and 2004 respectively, and the Chairperson of the Steering Committee in 2000.

      Lecture Topics: MOSFET threshold voltage extraction methods. Compact models of Double-Gate MOSFETs. Evolution of MOSFETs toward nanoelectronics. Integration-based Methods for Device Parameter Extraction and Distortion Evaluation Modeling. Characterization of Diodes and Solar Cells. Application of Lambert Function.
    • Tomás Palacios
       - Compound Semiconductor Devices; Emerging Technologies and Devices; Solid-State Power and High Voltage Devices
      Tomás Palacios portrait
      Massachusetts Institute of Technology
      EECS
      77 Massachusetts Ave. Bldg. 39-567B
      Cambridge, MA 02139
      USA
      Phone 1:
      +1 617 324 2395

      Tomás Palacios is a Professor in the Department of Electrical Engineering and Computer Science at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). His current research focuses on demonstrating new electronic devices and applications for novel semiconductor materials such as graphene and gallium nitride. His work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios has authored more than 300 contributions in international journals and conferences, 10 of which have received a best-paper award, as well as 5 book chapters and more than 30 patents. Prof. Palacios is the founder and director of the MIT MTL Center for Graphene Devices and 2D Systems, as well as the Chief Advisor and co-founder of Cambridge Electronics, Inc.
    • Matthias Passlack
       - Compound Semiconductor Devices; Emerging Technologies and Devices
      Matthias Passlack portrait
      TSMC Europe BV
      Advanced Technology Research
      Kapeldreef 75
      Leuven B-3001
      Belgium
      Phone 1:
      +32 16 28 1074

      Matthias Passlack received the Dipl.-Ing. (M.Sc.) and Dr.-Ing. (Ph.D.) degrees, both in Electrical Engineering, from the Technische Universität Dresden, Germany, in 1984 and 1988, respectively. In 1993, he joined AT&T Bell Laboratories in Murray Hill, New Jersey, USA, where he co-invented a ground breaking approach towards device quality oxide/GaAs interfaces. In 1995, he joined Motorola's Corporate Research Laboratories in Tempe, Arizona, USA. Dr. Passlack led R&D efforts at Motorola and Freescale Semiconductor in his capacity as a Distinguished Member of the Technical Staff in the field of III-V MOS materials, processes, characterization, devices, and physics. In 2006, these efforts culminated in the development of III-V MOSFETs performing in-line with ideal model predictions. In 2009, he joined TSMC Europe as a Deputy Director.
      Dr. Passlack has published two book chapters and more than 100 articles in peer refereed journals, and he holds more than 50 issued and pending US patents. Dr. Passlack is a co-recipient of the 2003 Ed Nicollian Award, he received the Motorola "Distinguished Innovator Award" in 2001, and the "Paper of the Month" award from Electronics Letters in 2007. His work was featured in "GaAsing Up Cellphones" IEEE Spectrum, May 2006, Compound Semiconductor Magazine (January 2008, May 2007), EE Times (Feb. 6, 2006) and Science Magazine (2003). Dr. Passlack is a Fellow of IEEE.
    • Siavash Pourkamali
       - Sensors and Actuators
      Siavash Pourkamali portrait
      University of Texas at Dallas
      Electrical Engineering
      800 W Campbell Rd RL 10
      Richardson, TX 75080
      USA
      Phone 1:
      +1 972 883 4532

      Siavash Pourkamali is an Associate Professor in the Electrical Engineering Department at University of Texas at Dallas. Prior to joining UT Dallas he was an Assistant Professor at the University of Denver. He received the BS degree in electrical engineering from Sharif University of Technology, Tehran, Iran, in 2001, and the MS and the PhD degrees in electrical engineering from Georgia Institute of Technology, Atlanta, GA, in 2004 and 2006, respectively.

      Prof. Pourkamali’s current research interests are in the areas of Integrated silicon-based MEMS/NEMS, self-aligned and tip-based batch nanofabrication technologies, and micro/nanomechanical resonant sensors. He is a recipient of a 2011 National Science Foundation CAREER Award, the 2008 University of Denver Best Junior Scholar Award, and the 2006 Georgia Tech Electrical and Computer Engineering Research Excellence Award. Prof. Pourkamali is also a member of IEEE Electron Devices Society.
    • Rüdiger Quay
       - Compound Semiconductor Devices; Solid-State Power and High Voltage Devices
      Rüdiger Quay portrait
      Fraunhofer Institute of Applied Solid-State Physics (IAF)
      Tullastr. 72
      Freiburg D-79108
      Germany
      Phone 1:
      +49-761-5159-843

      Fax:
      +49 -761-5159-71-843
      Rüdiger Quay (M 99, SM 2010) received the Diplom-degree in physics from Rheinisch-Westfälische Technische Hochschule (RWTH), Aachen, Germany, in 1997, and a second Diplom in economics in 2003. In 2001 he received his doctoral degree in technical sciences (with honours) from the Technische Universität Wien, Vienna, Austria. In 2009 he received the venia legendi (habilitation) in microelectronics, again from the Technische Universität Wien. In 2001 he joint the Fraunhofer Institute of Applied Solid-State Physics Freiburg, Germany where he first worked as a project leader in the development of 100 Gbit/s circuits based on InP HBTs, later as a group leader of RF-devices and circuit characterisation group working on mm-wave RF-devices and high-power devices and ICs. As of 2016 he is head of the business field power electronics with the Fraunhofer. Since 2011 he is also a lecturer at the IMTEK, Albert-Ludwig University, Freiburg, Germany, teaching courses in microwave and power electronics. Dr. Quay has authored and coauthored over 250 refereed publications and four monographs. He holds two patents. Dr. Quay was the co-receipient of the best paper awards of the European Microwave Integrated Circuit Conference (EUMIC) in 2004, 2005, and 2006, and of the European Microwave prize in 2012. In 2003-2004 he was a member of the IEDM technical committee on compound semiconductors, which he chaired in 2005. Since 2009 he is also serving in the TPRC of the MTT International Microwave Symposium and, from 2009-2012, in the TPC of the European Solid-State Circuits Conference (ESSCIRC). In 2016 he was the TPC chair of the Future Security Conference in Berlin, Germany, and is the student design chair of EUMW 2017 in Nuremberg. He is the chair of the German Microwave conference (GEMIC) in Freiburg in 2018.
      Dr. Quay is co-chairman of MTT-6, Microwave and Millimeter Wave Integrated Circuits, and since 2012, he is also a member of the IEEE Electron device society compound semiconductor subcommittee. Since 2011 he is further an associate editor of the International Journal of Microwave and Wireless Technologies.
    • Marko Radosavljevic
       - Emerging Technologies and Devices
      Marko Radosavljevic portrait
      Intel Corporation
      Components Research RA3-252
      5200 NE Elam Young Pkwy
      Hillsboro, OR 97124
      USA
      Phone 1:
      +1 503 613 4732

      Fax:
      +1 503 613 8964
      Marko Radosavljevic (M’09-SM’12) received the B.S. degree in Physics and in Mathematics from Bates College in 1996, and the Ph.D. degree in Physics and Astronomy from University of Pennsylvania in 2001, where he performed research on electronic properties of carbon nanotubes. Between 2001 and 2003, he was a postdoctoral researcher at the IBM T. J. Watson Research Center, in Yorktown Heights, New York working in the Nanoscience and Nanotechnology group in the Physical Sciences division. Since 2003, he has been a research engineer in the Components Research organization of Intel Corporation. His research interests focus on emerging materials, devices and technologies. His research has garnered numerous external press and internal recognitions, including Intel’s highest technical honor – Intel Achievement Award in 2014. Dr. Radosavljevic has authored and co-authored 3 books/book chapters, more than 60 technical publications and conference presentations and holds more than 55 United States patents. He has been a member of scientific committee of IEDM between 2010 and 2012.
    • Jurriaan Schmitz
       - Silicon and Column IV Semiconductor Devices; Materials, Processing and Packaging
      Jurriaan Schmitz portrait
      University of Twente
      MESA+ Institute for Nanotechnology
      PO Box 217
      Building Carré 2617
      Enschede, 7500 AE
      The Netherlands
      Phone 1:
      +31 53 489 2726

      Fax:
      +31 53 489 1034
      Jurriaan Schmitz was born in Elst (Netherlands) in 1967. He received his M.Sc. (with honors) and Ph.D. in experimental physics from the University of Amsterdam in 1990 and 1994, respectively. His research in that period was devoted to radiation imaging detectors for Large Hadron Collider experiments. He was a CERN Summer Student in 1990.
      He joined Philips Research (Eindhoven, Netherlands) in 1994 as Senior Scientist to work on CMOS device technology, characterization and reliability. He studied transistor scaling from 0.35-µm to 90-nm technology nodes, with topics like gate depletion, boron penetration, pocket (halo) implants and shallow junctions, and developed characterization techniques for transistors with leaky dielectrics.
      In 2002 he left Philips to become Professor of Semiconductor Components at the University of Twente (Enschede, Netherlands). He has acted as the promotor of 22 PhD students and (co)authored over 250 scientific papers and 16 US patents. His research interests include CMOS post-processing, novel materials, silicon device concepts, and wafer-level electrical characterization of devices.
      Prof. Schmitz was General Chairman of the 2011 IEEE ICMTS conference, and serves or has served on the technical program committees of various conferences including IEDM, Essderc and IRPS. He is a member of the Editorial Advisory Board of Solid-State Electronics.​
    • Luca Selmi
       - Solid State Device Phenomena; Emerging Technologies and Devices
      Luca  Selmi portrait
      Universita degli Studi di Udine
      DIEGM
      Via delle Scienze 208
      Udine 33100
      Italy
      Phone 1:
      +39 0432 558293

      Fax:
      +39 0432 558251
      Luca Selmi was born in Rome, Italy in 1961. He received the PhD degree in Electronic Engineering from the University of Bologna in 1992. From April 1989 to June 1990 he was a visiting scientist at Hewlett Packard Microwave Technology Division, USA. Since 2000 he is full professor of electronics at the University of Udine, Italy, where he is currently responsible of a research group on nano-electronic devices.

      His research interests are in the field of electron device modelling and characterization, with emphasis on CMOS scaling, Monte Carlo simulation techniques, hot carrier effects, quasi-ballistic transport, Non Volatile Memories (Floating gate, CHISEL-based, localized trapping, SONOS, TANOS) and semiconductor device reliability. He held technical and/or coordination responsibility in several EC research projects (ULIS, NESTOR, SINANO, PULL-NANO, NANOSIL, GOSSAMER, GRAND) in the field of micro- and nano-electronics. The research activities have been carried out in cooperation with many semiconductor research laboratories and companies worldwide, including Philips Research, NXP Semiconductors, Infineon Technologies, IMEC, LETI, IBM T.J.Watson Research Center, AT&T Bell Laboratories, Hewlett Packard.

      He has served as technical program committee member of several electron device conferences (IEDM - twice, ESSDERC, INFOS, SISC, ULIS) and co-organizer of the INFOS 2001 and ULIS 2003 and 2008 conferences. He co-authored approximately 150 papers in refereed journals and conference proceedings including approximately 30 IEDM papers.
    • Debbie G. Senesky
       - Sensor and Actuators; Compound Semiconductor Devices
      Debbie G. Senesky portrait
      Stanford University
      EXtreme Environment Microsystems Lab (XLab)
      Durand Building MC 4035
      Stanford, CA 94305-4035
      USA
      Phone 1:
      +1 650 723 2844

      Debbie G. Senesky is an Assistant Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She has also held positions at GE Sensing (formerly known as NovaSensor), GE Global Research Center, and Hewlett Packard. She has served as a subcommittee member (2014, 2015) and the subcommittee chair (2016) of the Sensors, MEMS and BioMEMS (SMB) subcommittee of the IEEE International Electron Devices Meeting (IEDM). Her current research interests include the development of micro- and nano-scale sensors, wide bandgap electronics, and interface materials for operation within extreme harsh environments. She is a recipient of the NASA Early Faculty Career Award and Alfred P. Sloan Foundation Fellowship Award.
    • Massood Tabib-Azar
       - Emerging Technologies and Devices; Sensors and Actuators; Vacuum Electron Devices
      Massood  Tabib-Azar portrait
      University of Utah
      ECE / Biomedical Eng
      Sorenson Molecular Biotech Bldg
      36 Wasatch Dr. #3737
      Salt Lake City, UT 84112
      USA
      Phone 1:
      +1 801 581 8775

      Fax:
      +1 801 581 5281
      Massood Tabib-Azar received M.S. and Ph.D. degrees in electrical engineering from the Rensselaer Polytechnic Institute in 1984 and 1986, respectively. In 1987 he joined the faculty of EECS department at Case Western Reserve University. He was a fellow at NASA during 1992-1992, on Sabbatical at Harvard University during 93-94, and at Yale University during 2000-2001. Massood is a USTAR Professor of ECE at the University of Utah, Electrical and Computer Eng. Department with an adjunct appointment in the Bioengineering Department. His current research interests include nanometrology, molecular electronics, micro-plasma devices, nano-electromechanical computers, novel devices based on solid electrolytes (memristors), sensors and actuators, microfluidics, and quantum computing. His teaching interests include development of courses in the area of electronic device physics and electromagnetics with an emphasis on solving problems and the use of computer-aided instruction tools. He is author of three books, two book chapters, more than 200 journal publications, and numerous conference proceeding articles. He has introduced and chairs many international symposia in his fields of interest. He is in the organizing and technical program committees of many conferences including IEEE Sensors and Transducers. He is currently serving as a Program Director in the Engineering Directorate at the National Science Foundation and is interested in “Injectable Bio Implants”, “Novel Communication Methods with Cells and Implantables”, “Quantum Sensing Methods”, and techniques to increase efficiencies of photo-synthesis for sun-to-fuel conversion devices.
      Dr. Tabib-Azar is a recipient of the 1991 Lilly Foundation Fellowship and he is a member of the New York Academy of Sciences, IEEE (Electron Devices), APS, AAPT, and Sigma Xi research societies. He has also received more than 14 certificate of appreciation and recognition for his professional activities and a best paper award from Design Automation conference in 2001 for his work on electromagnetic properties of interconnects and defects in ICs, a best paper award from International Conference on Intelligent Robots and Systems in 2004 for his work on Human-Machine Interface, and a best paper award from ISQED for his work on NEMS Processors in 2011.
    • Aaron Voon-Yew Thean
       - Molecular and Organic Devices; Thin Film Transistors; Emerging Technologies Devices
      Aaron Voon-Yew  Thean portrait
      National University of Singapore
      Electrical and Computer Engineering
      Office: E5 03-06
      4 Engineering Drive 3
      117583
      Singapore
      Phone 1:
      +65 6516 6471

      Aaron Voon-Yew Thean is a Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is also a consulting Fellow to IMEC, a Nano-electronic Research Center, based in Belgium. Prior to joining NUS in 2016, Aaron served as IMEC’s Vice President of Logic Technologies and the Director of the Logic Devices Research. At IMEC, he directed the research and development of advanced device technologies ranging from ultra-scaled FinFETs, Nanowire FETs, to III-V/Ge Channels, Tunnel FETs to emerging Beyond CMOS logic nano-device architectures based on Spintronics and 2-D materials. He has been involved in Design and Process Technology Co-optimizations (DTCO) of emerging technologies targeting 7nm, 5nm, and beyond.
      Before 2011, he was with Qualcomm’s CDMA technologies in San Diego, California, USA. There, he led the Strategic Silicon Technologies Group responsible for new System-On-Chip technology definition for upcoming Qualcomm technologies. From 2007 to 2009, Aaron served as the International Semiconductor Development Alliance (ISDA) FEOL and Device Manager at IBM, where he co-led an eight-company alliance device/process team to develop the 28-nm and 32-nm low-power bulk CMOS technology at IBM East Fishkill, New York. His team developed the Industry’s first foundry-compatible Gate-First High-k Metal-Gate (HKMG) with novel SiGe channel Low-Power bulk CMOS technologies. It enabled some of today’s most successful smart mobile devices in production by the foundry partners.
      Before IBM, Aaron was a senior staff scientist with Freescale Semiconductor and Motorola’s Advanced Product Research and Development Laboratory (APRDL). He subsequently led the Novel Device Research Group there in Austin, Texas. He performed path-finding research on a variety of advanced semiconductor devices that included Strained-Si-On-Silicon, FinFETs, FDSOI, and Nano-crystal Flash Memory.
      Aaron graduated from the University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors & Graduated as Edmund J. James’ Scholar), M.Sc., and Ph.D. degrees in Electrical Engineering. He was awarded the 2001 Gregory Stillman Semiconductor Research Award for his Ph.D. work. He has published over 300 technical papers and holds more than 50 U.S. patents for inventions in the field of advanced electronics. Among his notable recognitions include the 2014 Compound Semiconductor Industry Innovation award for his research group’s break-though III-V FinFET work. In 2013, he was given the Best Collaboration Award from Samsung Electronics Korea for R&D collaborations contributing towards its Semiconductor R&D Center. Aaron received the 2010 Young Alumni Achievement Award from his Alma Mater, University of Illinois, for his contribution to advanced transistor R&D, as well.
    • Ken Uchida
       - Emerging Technologies and Devices
      Ken Uchida portrait
      Keio University
      Electrical & Electronics Engineering
      3-14-1 Hiyoshi Kohoku
      Yokohama 223-8522
      Japan
      Phone 1:
      +81 45 566 1761

      Ken Uchida was born in Cambridge, MA in 1971. He received B.S. degree in physics, M.S. and Ph.D. degrees in applied physics all from the University of Tokyo, Tokyo, Japan, in 1993, 1995, and 2002, respectively. In 1995, he joined the Research and Development Center, Toshiba Corporation, Kawasaki, Japan. He has studied carrier transport in nanoscale devices such as Single-Electron Devices, Schottky source/drain MOSFETs, Ultrathin-body SOI MOSFETs, Strained Silicon MOSFETs, Carbon Nanotube Transistors, and (110) Si MOSFETs. He developed the physics-based compact model of single-electron transistors and the design scheme of single-electron logic circuits. He proposed and demonstrated single-electron random number generator for cryptographic applications. He investigated the physical mechanisms of mobility enhancement in uniaxial stressed MOSFETs, and clarified the importance of the stress-induced effective mass change along direction. He experimentally demonstrated the effectiveness of subband structure engineering in ultrathin-body SOI MOSFETs. He showed an impact of non-parabolic energy band structure on the characteristics of (110) Si MOSFETs. In 2008, he moved to Tokyo Institute of Technology, Tokyo, Japan, as an associate professor, where he worked on properties of shallow impurities in nanostructures and modeling of deformation potential in nanoscaled silicon. In 2012, he moved to Keio University, Yokohama, Japan, as a full professor.

      Dr. Uchida is a member of the Japan Society of Applied Physics and IEEE Electron Devices Society. He won the 2003 IEEE EDS Paul Rappaport Award for his work on single-electron devices, 2005 Young Scientist Award from Ministry of Education, Culture, Sports, Science and Technology of Japan, and Marubun research and encouragement award in 2001. He served as a subcommittee member (2005, 2006) as well as the subcommittee chair (2007) of Solid-State & Nanoelectronic Devices (SSN) subcommittee of IEEE International Electron Devices Meeting (IEDM). He has been a program committee member of IEEE Silicon Nanoelectronics Workshop (SNW), IEEE European Solid-State Device Research Conference (ESSDERC), IEEE International Reliability Physics Symposium (IRPS). He was a Distinguished Lecturer of IEEE Solid-State Circuit Society (SSCS) in 2007 and 2008.
    • William S. Wong
       - Thin Film Transistors
      William S. Wong portrait
      University of Waterloo
      ECE
      200 University Ave West
      Waterloo, ON N2L 3G1
      Canada
      Phone 1:
      +1 519 888 4567 ext 31121

      Fax:
      +1 519 746 3077
      William S. Wong is an Associate Professor in the Department of
      Electrical and Computer Engineering and Director of the
      Giga-to-Nanoelectronics Center at the University of Waterloo.
      Professor Wong received his Ph.D. from the University of California,
      Berkeley in 1999. From 2000-2010, William was a Senior Member of
      Research Staff at the Palo Alto Research Center (formerly Xerox PARC).
      His research is focused on processing and studying electronic and
      optoelectronic thin-film and nanowire devices. His work includes laser
      liftoff techniques that enable the present generation of ultra-bright
      LEDs for solid-state lighting and novel processing technologies for
      printed large-area flexible electronics. He is the holder of 50 U.S.
      patents (with 35 pending) and 80 publications, including 29 invited
      talks and 16 invited papers, in the area of electronic materials
      growth, processing, and characterization. He is a member of the IEEE,
      the Materials Research Society, and is on the Editorial Board of IEEE
      Electron Device Letters. He also is an invited organizer and elected
      committee member of the Electronic Materials Conference (EMC/TMS).
    • Yifeng Wu
       - Solid-State Power and High Voltage Devices; Compound Semiconductor Devices
      Yifeng Wu portrait
      Transphorm Inc
      15 Castilian Dr
      Goleta , CA 93117
      USA
      Phone 1:
      +1 805 456 1300

      Dr. Yifeng Wu received his B.E. degree from Tsinghua University, Beijing in 1985, his M.S. degree in Mechanical Eng. and his Ph.D. degree in Electrical Eng. from the University of California at Santa Barbara in 1994 and 1997, respectively. He served as a lead scientist in GaN microwave and millimeter-wave power devices at WideGap Technology LLC and Cree Inc. for 11 years. He joined Transphorm Inc. in 2008, leading the engineering effort in developing GaN power conversion devices and applications.
      Since his early research on GaN high-electron-mobility-transistors (HEMTs) as a Ph.D. project in 1995, Dr. Wu has been active at the forefront of GaN power electronics with work from basic device discovery to cutting-edge device designs, from millimeter-wave power HEMTs to kV high-efficiency power switches. He demonstrated the first GaN microwave power transistor [EDL 1996] and multiple times extended the record of the highest power density of a solid-state transistor [EDL 1998, IEDM 1999, EDL 2004, DRC 2006]. He led an engineering team at Transphorm and succeeded in developing industry’s first Jedec-qualified 600V GaN-on-Si power device products [WiPDA 2013]. His team further demonstrated true kV-class GaN transistors exceeding vertical SiC performance, reaching an operation space unprecedented for horizontal devices [TPE 2014].
      Dr. Wu holds 75 US patents and has authored significant papers resulting in >6500 citations in Google Scholar. He is a senior member of the IEEE (EDS).
    • Huili Grace Xing
       - Compound Semiconductor Devices; Emerging Technologies and Devices
      Huili Grace  Xing portrait
      Cornell University
      ECE and MSE
      425 Philips Hall
      Ithaca, NY 14853
      USA
      Phone 1:
      +1 607 255 0605

      Huili Grace Xing is currently a R. Lunquist Sesquicentennial Professor of ECE and MSE at Cornell University. She obtained B.S. in physics from Peking University (1996), M.S. in Material Science from Lehigh University (1998) and Ph.D. in Electrical Engineering from University of California, Santa Barbara (2003), respectively. Her research focuses on development of III-V nitride and 2-D crystal semiconductor growth, electronic and optoelectronic devices, especially the interplay between material properties and device developments. More recent research interests include tunnel field effect transistors and THz applications. She is a recipient of AFOSR Young Investigator Award, NSF CAREER Award and ISCS Young Scientist Award.