Lastest Issue: Table of Contents (TOC)
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- Table of Contents
- IEEE ELECTRON DEVICES SOCIETY
- Changes in the Editorial Board
- Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation
- TCAD Simulations of Reconfigurable Field-Effect Transistor With Embedded-Fin-Contact to Improve On-Current
- Comprehensive Analysis of Sheet Thickness Scaling on the Performance of Nanosheet nFETs
- Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors
- An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique
- The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂
- MOBO-Driven Advanced Sub-3-nm Device Optimization for Enhanced PDP Performance
- Reverse Recovery Enhanced and Single-Event Effects Hardened Power Schottky Source MOSFET With Integrated Retrograde p-Well Schottky Contact Super Barrier Rectifier
- Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical Modeling
- Study on Enhancing Electrostatic Discharge Stress Robustness of Flexible Thin-Film Transistors via Interface Modification
- Strain Evolution in SiGe Nanosheet Transistor Process Flow
- Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer
- High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier
- GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode Application
- Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress
- Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer
- Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit
- Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET
- Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications
- Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning
- Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors
- Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor
- Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer
- High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
- Hydrogen-Related Instability of IGZO Field-Effect Transistors
- The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization
- Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator
- Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering
- Dual-Gate Operation and Configurable Logic From Solution Pattern-Based Zinc Tin Oxide Thin-Film Transistors
- Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel
- Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al₂O₃/HfO₂ Passivation Layer
- Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection
- High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/β-Ga₂O₃ p-n Heterojunction
- RTS Noise Reduction in CMOS Image Sensors Using Correlated Extrema Cancellation
- UV Photonic Integrated Chip Based on Epitaxial III-N on Si for Short-Range On-Chip Data Transmission
- Edge Breakdown Suppression in Avalanche Photodiodes Using an Attached Step Guard Ring
- High Wall-Plug Efficiency AlGaN Deep Ultraviolet Micro-LEDs Enabled by an Etched Reflective Array Design for High Data Transmission
- Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer
- Hydrothermally Synthesized WS₂-QDs/Si (0-D/3-D) Vertical Heterojunction for an Efficient Wide Spectral (UV–Vis–NIR) Photodetection
- Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication
- Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy
- Investigation of Prepulse of SiC Drift Step Recovery Diode in Fast Interruption Process
- Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design
- An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
- Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
- Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf₀.₅Zr₀.₅O₂
- Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
- A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMs
- Analytical Release Voltage Model of Monolithic 3-D Integrated Nanoelectromechanical Memory Switches
- Study of Ethanol Gas Sensing Characteristics of An Al-Doped SnO₂ Thin Film Decorated With Gold Nanoparticles
- A Sc0.096Al0.904N-Based Bimorph Piezoelectric MEMS Microphone Using 3 × 3 Circular Diaphragms
- High-Performance 3-D Silicon-Embedded Coupled Solenoid Inductors With Inserted Magnetic Core
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Enhancing Long-Pulse Operation of Ku-Band TTO Microwave Source for GW-Level Applications
- A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode
- Design and Simulation Investigations of an X-Band Klystron-Like Relativistic Backward Wave Oscillator With Dual Modulation Cavities
- A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam
- Threshold Prediction of Spurious Oscillations in Klystrons Due to Backstreaming Electrons From Collector
- A Vacuum Transistor Based on Electron Emission From SiOₓ Tunneling Diodes
- Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic Device
- Demonstration of a Low-Voltage High-Efficiency Continuous-Wave Millimeter-Wave Gyrotron
- Broadening Bandwidth of Extended Interaction Klystron Through Nonperiodic Perturbations
- Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study
- Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
- CuTi as Potential Liner- and Barrier-Free Interconnect Conductor
- Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture
- Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior
- Honeycomb-Inspired Interconnects for Large-Area Flexible Circuits: Simulation and Modeling
- Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages
- Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide
- Energy-Efficient Brain Floating Point Convolutional Neural Network Using Memristors
- Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations
- A Novel Physics Aware ANN-Based Framework for BSIM-CMG Model Parameter Extraction
- Implementing Remote Doping and Suppressed Scattering in MoS₂ Field-Effect Transistor Using CMOS-Compatible Process
- Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System
- Design Guidelines for Oxide Semiconductor Gain Cell Memory on a Logic Platform
- Monolithic 3-D Integration of Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM and Analog RRAM-Based Computing-In-Memory
- Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array as BEOL Buffer Macro for Monolithic 3-D Integration With Analog RRAM-Based Computing-in-Memory
- Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device
- Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM
- Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling
- Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design
- New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology
- Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels
- Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K
- Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping
- Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film Transistors
- Strain-Induced Performance Variation in Stretchable Carbon-Nanotube Thin-Film Transistors and the Solution Through a Circular Channel Design
- Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS Technology
- Latchup Risk in a 4H-SiC Process
- Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET
- Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN
- Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability
- TechRxiv: Share Your Preprint Research with the World!
- IEEE Transactions on Electron Devices Information for Authors
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