George E. Smith Award
The George E. Smith Award was established in 2002 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Electron Device Letters. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the IEEE EDS International Electron Devices Meeting.
Congratulations to the 2019 IEEE EDS George E. Smith Award Winners for the winning paper
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
Award Winners
| Year | Paper Title | Authors |
|---|---|---|
| 2019 | "Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit" | Yuhao Zhang, Min Sun, Josh Perozek, Zhihong Liu, Ahmad Zubair, Daniel Piedra, Nadim Chowdhury, Xiang Gao, Kenneth Shepard and Tomás Palacios |
| 2018 | "Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors | Daewoong Kwon, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto Dos Reis, Chenming Hu and Sayeef Salahuddin |
| 2017 | "Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study" | Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Gia V. Luong, Qing-Tai Zhao, Siegfried Mantl, Christian C. Enz, and Adrian M. Ionescu |
| 2016 | “An Experimental Demonstration of GaN CMOS Technology" |
Rongming Chu, Yu Cao, Mary Chen, Ray Li and Daniel Zehnder |
| 2015 |
"First Demonstration of Amplification at 1 THz Using 25nm
InP High Electron Mobility Transistor Process"
|
Xiaobing Mei, Wayne Yoshida, Mike Lange, Jane Lee, Joe Zhou, PoHsin Liu, Kevin Leong, Alex Zamora, Jose Padilla, Stephen Sarkozy, Richard Lai, and William R. Deal |
| 2014 | "Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator With Asymmetric Strain" | Winston Chern, Pouya Hashemi, James T. Teherani, Dimitri A. Antoniadis, and Judy L. Hoyt |
| 2013 |
"Origins of Effective Work Function Roll-OffBehavior for High-Last Replacement Metal Gate Stacks and Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors |
Takashi Ando, Eduard A. Cartier, John Bruley, Kisik Choi,Vijay Narayanan and Yong-Young Noh, Kang-Jun Baeg, Dongyoon Khim, Juhwan Kim, Dong-Yu Kim, Si-Woo Sung, Byung-Do Yang |
| 2012 | "Tri-Gate Normally-Off GaN Power MISFET" | Bin Lu, Elison Matioli, Tomas Palacios |
| 2011 | Transparent Flexible Circuits Based on Amorphous-Indium Gallium Oxide Thin-Film Transistors" | Jin Jang, Mallory Mativenga, Min Hyuk Choi, Jae Won Choi |
|
2010 |
"Dual-Gate Graphene FETs with fTof 50 GHz | Yu-Ming Lin, Hsin-Ying Chiu, Keith A. Jenkins, Damon B. Farmer, Phaedon Avouris, Alberto Valdes-Garcia |
|
2009 |
"Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition | Jakub T. Kedzierski, Pei-Lan Hsu, Alfonso Reina, Jing Kong, Paul Healey, Peter Wyatt, Craig Keast |
| 2008 | "Low-Temperature-Processed Inorganic Gate Dielectrics for Plastic-Substrate-Based Organic Field-Effect Transistor" and "Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon " |
Subodh G. Mhaisalkar, H.S. Tan, T. Cahyadi, Z.B. Wang, A. Lohani, Z. Tsakadze, S. Zhang, and F.R. Zhu
John A. Rogers, D-H Kim, J-H Ahn, H-S Kim, K.J. Lee, T-H Kim, C-J Yu, and R.G. Nuzzo |
| 2007 | "Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors" | Navab Singh, W.W. Fang, L.K. Bera, H.S. Nguyen, S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.-L. Kwong |
| 2006 | "Half-Terahertz Operation of SiGe HBTs" | John D. Cressler, Ramkumar Krithivasan, Yuan Lu, Jae-Sung Rieh, Marwan H. Khater, David Ahlgren and Greg Freeman |
| 2005 | "Pentacene TFT Driven AM OLED Displays" | Lisong Zhou, Sungkyu Park, Bo Bai, Jie Sun, Sheng-Chu Wu, Thomas N. Jackson, Shelby Nelson, Diane Freeman and Yongtaek Hong |
| 2004 | "Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface" | Zhiyuan Cheng, A.J. Pitera, M.L. Lee, J. Jung, J.L. Hoyt, D.A. Antoniadis, and E.A. Fitzgerald |
| 2003 | "(110) Strained - SOI N - MOSFETs with Higher Electron Mobility " |
T. Mizuno, N. Sugiyama, S. Takagi and T. Tezuka |
| 2002 |
"Self-Aligned SiGe NPN Transistors with 285 GHz fMAX and 207 GHzfT in a Manufacturable Technology"
|
B. Jagannathan, M. Khater, F. Pagette, J.-S Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein and S. Subbanna.
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