- Home
- About EDS
- Governance
- Standing Committees
- Educational Activities Committees
Educational Activities Committees
Vice President of Educational Activities
Navakanta Bhat

Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Education Committee Members
Deji Akinwande - Emerging Technologies and Devices; Thin Film Transistors

Dr. Deji Akinwande is a Fellow of the American Physical Society (APS). He received the PhD degree in Electrical Engineering from Stanford University in 2009, where he conducted research on the synthesis, device physics, and circuit applications of carbon nanotubes and graphene. His Master’s research in Applied Physics at Case Western Reserve University pioneered the design and development of near-field microwave probe tips for nondestructive imaging and studies of materials. He is the David & Doris Lybarger Endowed Faculty Professor at the University of Texas at Austin. His research focuses on 2D materials, pioneering device innovations from lab towards applications. Prof. Akinwande has been honored with the 2018 Fulbright Specialist Award, 2017 Bessel-Humboldt Research Award, the U.S Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE “Early Career Award” in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, the 3M Nontenured Faculty Award, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, and Stanford DARE Initiative. His recent results on silicene have been featured by nature news, Time magazine and was selected among the top 2015 science stories by Discover magazine. His work on flexible 2D electronics was highlighted among the "best of 2012" by the nanotechweb news portal and has been featured on MIT's technology review and other technical media outlets. He is a distinguished lecturer of the IEEE Electron Device Society and an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He is the Conference Chair of the 2018/2019 Device Research Conference (DRC), and the Committee Chair of Nano-devices for 2018 IEEE IEDM Conference. He co-authored a textbook on carbon nanotubes and graphene device physics by Cambridge University Press, 2011, and was recently a finalist for the Regents' Outstanding Teaching Award, the highest teaching award from the University of Texas System.
Lecture Topics:
- Flexible 2D Nanoelectronics: Device Physics, Mechanics and Circuits
- Graphene Devices and Si-CMOS Integration
- 2D Materials and Devices and Device Physics
- Non-volatile memory devices and applications
- RF Devices and Circuits
Mansun J. Chan - Fellow

Lecture Topics:
- Nano-device physics and technology
- Device modelling and circuit simulation
- Interconnect Technology
- Non-volatile memory technology
- Bio-sensors and circuits
Biography: Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology. After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model. Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program. In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model. In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform. He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.
Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.
Ahmad E Islam - Compound semiconductor Devices, Solid State Power and High Voltage Devices

Sensors Directorate, USA
Dr. Ahmad Ehteshamul Islam is a Senior Electronics Engineer at the Air Force Research Laboratory (AFRL) - Sensors Directorate (RY). He serves as a Research Team Lead at the Devices for Sensing Branch (RYDD) developing microwave devices and amplifiers using III-N materials and high frequency power converters using Ga2O3. He is interested in the performance improvement and reliability of microelectronic devices by utilizing materials innovation, defect engineering, microfabrication, and novel device design.
Dr. Islam obtained Bachelors in Electrical Engineering (EE) from Bangladesh University of Engineering and Technology (BUET) in 2004, and a Ph.D. in EE from Purdue University in 2010. His Ph.D. research was on the theory and characterization of Bias Temperature Instability; the resultant model is now widely adopted in the CMOS industry and has recently been included into a TCAD model developed by Synopsys. Dr. Islam has published journals and conference proceedings on dielectric integration, defect engineering, nanomaterials, flexible biosensors, and high-frequency, high-power and high temperature electronics. He is a Senior Member of IEEE and a member of IEEE EDS Education Activities Committee. He was the recipient of National Research Council (NRC) Postdoctoral fellowship (2012, 2014), Intel foundation PhD fellowship (2009), IEEE EDS PhD fellowship (2008), and Kintar-Ul-Haque Gold Medal (2005).
Dr. Islam joined the United States Air Force in 2020 as a civil servant. Previously, he worked with AFRL/RYDT as a Research Engineer/Technical Advisor of KBR, Inc. (2019-2020), and with AFRL/RXAS as a Research Scientist of UES, Inc. (2012-2014, 2016-2019) and as a NRC Postdoctoral Fellow (2014-2016). He also worked as Adjunct Faculty of EE at the University of Dayton (2019-2020), as a Postdoctoral Researcher with Prof. John Rogers at the University of Illinois (2010-2012) and as a Lecturer of EE Department at BUET (2004-2005).
Subramanian Iyer - Fellow

Electrical Engineering Department
Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
Chao-Sung Lai - Senior Member

Lecture Topics:
- Field-effect-transistor for chemical and biosensing applications
- Graphene transistor with fluorinated dielectrics and isolation.
- Memristor and Neuromorphic Devices. 4.2D materials and doping and device characterization
P Susthitha Menon

National University of Malaysia (UKM)
P Susthitha Menon is currently an Associate Professor at the Universiti Kebangsaan Malaysia (UKM) at Kuala Lumpur. She received her BSEE degree from (UKM) in 1998. As an Intel scholar, she worked at Intel Malaysia as a Product Engineer for mobile modules systems from 1999 to 2002. She then received her MSc and PhD (Distinction) degrees in 2005 and 2008 respectively from UKM, for the development of Si- and InGaAs-based interdigitated p-i-n photodiodes. At the University’s Institute of Micro-Engineering & Nanoelectronics (IMEN) she is specializing in the field of optoelectronics, nanophotonics, and robust engineering optimization. Susthitha is a Senior Member of IEEE. She is in the organizing team international conference ICSE by ED Malaysia Chapter for many years and is the Secretary of the IEEE Electron Devices Malaysia Chapter.
Durga Misra - Senior Member

- Nanoelectronics to Nanotechnology: More Moore and More than Moore
- Self-Heating in FinFETs and Its Impact on Logic Circuits
Stephen A. Parke - Senior Member

Dept. Of Engineering
Lecture Topics: Flexible Electronics: Silicon on Polymer Engineering Education Trends Superhydrophobic Surfaces History and Future of Semiconductor Memory
Harish Subbaraman
- About EDS
- Mission, Vision and Field of Interest Statements
- Mission Fund
- Strategic Directions
- Governance
- EDS Executive Office
- Volunteer Resources
- EDS 50th Anniversary Booklet
- EDS Overview Slides
- EDS Humanitarian/Special Projects
- EDS Society Brief
- 75th Anniversary of the Transistor
- Sitemap