J.J. Ebers Award


J.J. Ebers Award Committee

j.j. ebers photo


The Jewell James Ebers Award was established in 1971 with the intention to foster progress in electron devices and to commemorate the life activities of Jewell James Ebers, whose distinguished contributions, particularly in the transistor art, shaped the understanding and technology of electron devices.

It is presented annually to honor an individual(s) who has made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. Nominees are not required to be IEEE or EDS members.  The recipient(s) is awarded a certificate and check for US$5,000, presented at the International Electron Devices Meeting or any of the EDS flagship conferences​ (EDTM, VLSI or PVSC).  

Please note:  The EDS J.J. Ebers Award cannot be given to a candidate for the same work for which an IEEE Technical Field Award, IEEE Medal, or other society level award was previously received.

Please complete and submit your online nomination form by July 1st to the EDS Executive Office.  All endorsement letters should be sent directly to l.riello@ieee.org and received by the deadline date.



Congratulations to Arokia Nathan, 2020 IEEE EDS J.J. Ebers Award Winner


Recent Winners of the J.J. Ebers Award

2020 - Arokia Nathan "For contributions to thin film transistors and flexible/foldable electronics integration strategies"

2019 - H.-S. Philip Wong "For pioneering contributions to the scaling of silicon devices and technology"

2018 - Michael Shur "For pioneering the concept of ballistic transport in nanoscale semiconductor devices"

2017 - Kang L. Wang "For contributions and leadership in strained SiGe and magnetic memory technologies"

2016 - Jaroslav Hynecek "For the pioneering work and advancement of CCD and CMOS image sensor technologies"

2015 - Jack Yuan-Chen Sun "For sustained leadership and technical contributions to energy efficient foundry CMOS technologies"

2014 - Joachim N. Burghartz "For contributions to integrated spiral inductors for wireless communication ICs and ultra-thin silicon devices for emerging flexible electronics"

2013 - Nobukazu Teranishi "For development of the Pinned Photodiode concept widely used in Image Sensors”

2012 - Yuan Taur "For contributions to the advancement of several generations of CMOS process technologies"

2011 - Stuart Ross Wenham “For technical contributions and successful commercialization of high efficiency solar cells”

2010 - Mark E. Law “For contributions to widely used silicon integrated circuit process modeling”


View All Past Winners


Although the IEEE Electron Devices Society (EDS) is pleased to invite all individuals and groups in the OFAC embargoed countries to submit nominations for IEEE EDS Awards, the IEEE EDS cannot provide any award monies to members from such countries at this time.