Vice President of Membership and Services
Ru Huang - MOS Devices and Technology
Institute of Microelectronics
Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997. In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
Membership Committee Members
Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.
Benjamin Iniguez - Senior Member
Avinguda dels Paisos Catalans 26
Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices
Subramanian Iyer - Fellow
Carmen M. Lilley
Department of Mechanical Engineering
3031 ERF MC 251
Chicago, Illinois 60607
Dr. Carmen M. Lilley obtained her BS in General Engineering at the University of Illinois at Urbana-Champaign in 1998. She then attended Northwestern University and obtained her PhD in Theoretical and Applied Mechanics in 2003. Upon completing her PhD, she joined the Department of Mechanical and Industrial Engineering at the University of Illinois at Chicago as an Assistant Professor and was promoted to Associate Professor in 2010. Dr. Lilley has published in prestigious journals such as the Applied Physics Letters (APL), Journal of Applied Physics (JAP), and Nano Letters. She served as an Associate Editor for the ASME Journal of Computational on Nonlinear Dynamics from 2011-2015, and has reviewed manuscripts for APL, Journal of Applied Mechanics, JAP, Journal of Vibration and Acoustics, and Nano Letters. She has received various awards such as the National Science Foundation Faculty Early Career (CAREER) Development Award and the College of Engineering Research Award. Dr. Lilley is a senior member of IEEE. Within EDS, Dr. Lilley is on the IEEE Electron Devices Society Educational Committee Member (2012-Present), Chair of the MS and PhD Fellowship Committee (2014-Present), and a Board-of-Governors Member-at-Large (2015-Present). She is the technical committee chair on Nanomaterials for the Nanotechnology Council (NTC) (2006-Present) and served as their Council Representative for IEEE Women in Engineering Society (2012-2016). She has also served on the program committee for the NTC flagship conference IEEE Nano as a reviewer, track chair, and was the technical program chair for IEEE Nano 2014.
Durga Misra - Senior Member
- Nanoelectronics to Nanotechnology: More Moore and More than Moore
- Self-Heating in FinFETs and Its Impact on Logic Circuits
Angele H.M.E. Reinders - Editor PHOTOVOLTAIC SYSTEMS
PO Box 217
Enschede 7500 AE
Angèle Reinders is an Associate Professor of Sustainable Energy and Design in the Department of Design, Production and Management of University of Twente, the Netherland. Besides this, she was part-time affiliated with the Design for Sustainability program of Delft University of Technology, the Netherland, till 2015. Her present research focuses on achieving a better integration of photovoltaic (PV) solar energy and other sustainable energy technologies in systems and products by new design approaches. She has practical experience with design-driven research on PV systems, PV modules, PV powered boats, building integrated PV and product integrated PV as well as PV in smart grids. Recently she established the energy center ARISE at the Faculty of Engineering Technology of University of Twente. She has published about 100 papers, edited two books, and is a co-founding editor of IEEE Journal of Photovoltaics. Angèle is intensively involved in the organization of the annual IEEE Photovoltaic Specialists Conference and has a vast international experience and stayed at Fraunhofer ISE (Germany), World Bank (US), ENEA (Italy), Jakarta and Papua (Indonesia) and the Centre for Urban Energy (Canada) for her research. She holds an MSc in Experimental Physics and a PhD in Chemistry from Utrecht University in the field of monitoring and simulation of PV systems. She received her doctoral degree from the Faculty of Chemistry at Utrecht University in 1999. Her PhD dissertation covers the analysis and simulation of the field performance of photovoltaic solar energy systems. Angèle Reinders completed a master degree in Experimental Physics in 1993 at Utrecht University, specializing in material physics and energy physics.
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