EDS publication representatives serve two-year renewable terms with no voting privileges on the EDS Forum.
Photovoltaics, Journal of
Anthony S. Oates
Science Based Industrial Park
Anthony S. Oates received the Ph.D. degree in physics from the University of Reading, Reading, U.K., in 1985. He was then with the AT&T Bell Laboratories, where his research centered on studies of failure mechanisms in CMOS technologies. During this time, he was appointed as a Distinguished Member of the Technical Staff, and he assumed responsibility for reliability physics development and CMOS technology process qualiﬁcation. Since 2002, he has been with Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan, where he is responsible for technology reliability physics research. He has published over 100 papers in the ﬁeld of microelectronics reliability, and he is the co-holder of 7 patents. Dr. Oates is a fellow of the IEEE. He is currently the Editor-in-Chief for the IEEE Transactions of Device and Materials Reliability. He served as the General Chair of the International Reliability Physics Symposium in 2001, and was the chair of the IEEE Electron Devices Society Device reliability advisory committee from 2006 to 2011. He has also participated in technical committees for the International Electron Devices Meeting, IPFA, and ESREF symposia. He has edited two conference proceedings on microelectronic materials reliability for the Materials Research Society.
Enrico Sangiorgi - Fellow
Enrico Sangiorgi (F’05) received the Laurea degree in electrical engineering from the University of Bologna, Italy, in 1979. In 1983, 1984, and 1991, he was a Visiting Scientist at the Center for Integrated Systems, Stanford University, Stanford, California, for approximately three years. From 1985 to 2001, he was a consultant at Bell Laboratories, Murray Hill, NJ, where he was a Resident Visitor for more than three years. In 1993, he was appointed Full Professor of Electronics at the University of Udine, Italy, where he started the Electrical Engineering Program and the microelectronic group. In 2002, he joined the University of Bologna, where he is currently in charge of the nanomicro- electronics group at the Campus of Cesena. From 2005 to 2011 he has been the Director of Consorzio Nazionale Interuniversitario per la Nanoeletronica (IU.NET – Italian Universities Nanoelectronic Team), a Legal Consortium grouping nine University Groups active in the field of Nanoelectronics. In 2005 he has been appointed member of the CATRENE Scientific Committee. Since 2006 he is the Vice Chairman of the Scientific Community Council (SCC) of ENIAC (the European Nanoelectronics Initiative Advisory Council). In 2007 he has been appointed member of the Steering Board of AENEAS, the private section of the ENIAC European Technology Platform. In 2008 he has been appointed CEO of Rinnova srl., a new company founded by the University of Bologna aiming to bring research and innovation to SME’s. From 2008 to 2012 he has been the Dean of the Second School of Engineering at the University of Bologna. In 2012 he has been appointed Director of the Department of Electrical and Electronic Engineering – Guglielmo Marconi – of the University of Bologna. Since 2014 he is the Director of the SINANO Institute, International Organization grouping 23 European Institutions active in the field of nanoelectronics.
From 1994 to 2009 he has been Editor of IEEE Electron Device Letters. He has been the Guest Editor of several Special Issues on major scientific journals such as IEEE Transactions on Electron Devices, Solid State Electronics, etc. He has been a member of the Technical Committees of several International Conferences on Electron Devices: IEDM (’91-96; ’04-’06), ESSDERC (‘99-present), INFOS (’95-03), ULIS (’00-‘08), etc. Since 2011 he is a member of the Steering Board of the IEEE Journal of Photovoltaics.
Enrico Sangiorgi is a Fellow of the IEEE, Distinguished Lecturer of the Electron Device Society, he has been Chairman of the Electron Device Society TCAD Technical Committee from 2004 to 2011 member of the Cledo Brunetti Award Committee and Education Award Committee of the EDS. Since 2011 he is elected member of the EDS AdCom. Since 2013 he is a member of the EDS Fellows Evaluation Committee. He has been involved in several European Projects of the 5, 6, and 7 FP with Management Responsibilities, and he has acted as Project Reviewer for the European Commission. The research interests of Enrico Sangiorgi, developed in cooperation with research centers and companies such as Bell Labs., Philips, Infineon Tech., ST Microelectronics, IMEC, and CEA-LETI, include the physics, characterization, modeling, and fabrication of silicon solid-state devices and integrated circuits. In particular he has been working on several aspects of device scaling, its technological, physical, and functional limits, as well as device reliability for silicon CMOS and bipolar transistors. In order to tackle and eventually overcome the hurdles of device scaling, down to the ultimate physical and technological limits, he has devised and developed several original concepts and methods in the characterization and modeling of nanoscale silicon devices. Recently his interests included the physics and modeling of Photo-voltaics devices where he has worked on several aspects of device optimization. Enrico Sangiorgi coauthored 34 papers presented at the International Electron Devices Meeting (IEDM) Conference, and overall more than 250 papers on major journals and conference proceedings.
Lecture Topics: Nanodevices modeling and simulation Photovoltaics devices and technologies Energy Harvesting devices, technologies and systems
Rajendra Singh - Fellow
Dept. of Electircal and Computer Engineering
Rajendra Singh(S'75-M'78-SM'82-F'02) received the B.S. degreefrom Agrac University, Agra, India, in 1965, the M.S. degree in physics(electronics-wireless as the special subject) from the Meerut University, India,in 1968, the M.S. degree in physics (thesis on superconductivity) from theDalhousie University, Halifax, NS, Canada, and the Ph.D. degree inphysics (dissertation on solar cells) from McMaster University, Hamilton, ON,Canada, in 1979. Dr. Singh is currently D. Houser Banks Professor inthe Department of Electrical and Computer Engineering and the Director of the Center forSilicon Nanoelectronics at Clemson University. With proven success in operations, project/program leadership, R&D, product/process commercialization, and start-ups, Dr. Singh is a leading semiconductor and photovoltaic (PV) and expert with over 33 years of industrial andacademic experience of photovoltaic and semiconductor industries. The technology invented byDr. Singh at Energy Conversion Devices (US Patent No. 4419533. South African Patent No.830748; Great Britain Patent No. 2116364) is used in the manufacturing of amorphous thin filmPV modules sold by United Solar. The technology invented by Dr. Singh (US Patens #.5, 820,942, 1998& # 5, 980, 637, 1999) has been licensed to RTP tool manufacturer AG Associates(prototype tool developed in his Lab)...From solar cells to integrated circuits, he has led thework on semiconductor and photovoltaic device materials and processing by manufacturableinnovation and defining critical path.
He has published over 330 papers in various journals and conference proceedings. He is editoror coeditor of more than fifteen conference proceedings. He has presented over 50 keynoteaddresses and invited talks in various national and international conferences. He has served on anumber of committees of various professional societies. Currently he is serving as Chair of IEEEElectron Devices Society Technical Committee on Semiconductor.
Part of Prof. Singh's awards and honors include IEEE distinguished Lecturer for Latin Americanon Solar Cells (Region 9) 1983, Distinguished Technologist United Nations DevelopmentProgram (1987), IEEE Electron Device Society distinguished Lecturer (1994-2012), andoutstanding Researcher Award, Clemson University, Sigma Xi Chapter (1997), five ClemsonUniversity awards for Faculty Excellence, Thomas D. Callinan Award of the ElectrochemicalSociety (1998), J.F. Gibbons Award from the 11th IEEE International Conference onAdvanced Thermal Processing of Semiconductors (2003), and the 2005 McMaster UniversityDistinguished Alumni Award. Photovoltaics World (October 2010) selected him as one of the10 Global "Champions of Photovoltaic Technology". He is Fellow of the Society of OpticalEngineering, American Association for the Advancement of Science, and American Society ofMetals, ASM.
Lecture Topics: Photovoltaics as dominant electricity generation technology in 21st century sub 10 nm semiconductor manufacturing Wide Band Gap Based Semiconductor Manufacturing Bottom Up Based Nanostructures: Manufacturing challanges Nanosystems: Manufacturing Challanges and Opportunities
Exploratory Solid-State Computational Devices and Circuits Steering Committee, Journal on
Biography: Sayeef Salahuddin is an assistant professor in the department of Electrical Engineering and Computer Sciences at the University of California, Berkeley. His research interests are in the field of electronic transport in small structures currently focusing on novel electronic and spintronic devices for low power logic and memory applications. Salahuddin introduced the concept of using interacting systems for ultra low energy switches, leading to the idea of negative capacitance transistors. He received the Kintarul Haque Gold Medal from Bangladesh University of Engineering and Technology in 2003, a Microelectronics Advanced Research Corporation / Focus Center Research Program Inventor Recognition Award in 2007, a UC Regents Junior Faculty Fellowship in 2009, a Hellman Faculty Fellowship in 2010, the NSF CAREER award in 2011, the IEEE Nanotechnology Early Career Award in 2012, an Air Force Office of Scientific Research Young Investigator Award in 2013, an Army Research Office Young Investigator Award in 2013 and best paper awards from the IEEE Transactions of VLSI Systems in 2013 and at the VLSI-TSA conference, 2013.
Applied Superconductivity Editorial Bd., Trans. On
Device and Materials Reliability Advisory Board, Transactions On
Andreas Kerber was born in Schnann, Austria. He received his Diploma in physics from the University of Innsbruck, Austria, in 2001 and a PhD in electrical engineering from the TU-Darmstadt, Germany in 2004 (granted with honors). He worked as an intern at Bell Laboratories, Lucent Technologies, Murray Hill, NJ, USA (1999-2000), at IMEC in Leuven, Belgium (2001-03) as Infineon Technologies assignee to International SEMATECH, for the Reliability Methodology Department at Infineon Technologies in Munich, Germany (2004-06), for AMD in Yorktown Heights, NY (2006-09), and as a Prinicpal Member of Technical Staff for GLOBALFOUNDRIES in Malta, NY (since 2009). Much of his work centered around Front-End-Of-Line (FEOL) reliability research with focus on metal gate / high-k CMOS technologies. He has co-authored over 100 papers in Journals and Conferences, is an IEEE senior member (since 2011) and an IEEE Distinguished Lecturer for the Electron Device Society (since 2016).
Reliability of scaled Metal Gate / High-K CMOS devices
Electron Devices, Transactions On (Editorial Board)
Khairul Alam - Compound Semiconductor Devices
Khairul Alam is a professor in the department of Electrical and Electronic Engineering at East West University, Dhaka, Bangladesh, where he has been a faculty member since 2007. His research interests lie in the area of physics, modeling, and quantum simulation of nano-scale MOSFETs and tunnel FET of III-V materials, compound semiconductors, heterostructures, and two dimensional materials and emerging semiconductor materials. Prof. Alam completed his Ph.D. at the University of California Riverside, USA and his MS and BS studies at Bangladesh University of Engineering and Technology (BUET), Bangladesh. He spent two years at the University of Tokyo, Japan as a post-doctoral research fellow and summer of 2006 at Intel, New York, USA as an intern. He published a book chapter, 34 journal papers and 26 conference papers. He received University Grants Commission award in 2009 for his research on graphene nanoribbon transistor. In addition to research, Prof. Alam teaches electronic and optoelectronic courses at the university. He served the director position of institutional quality assurance cell of East West University for three years. During his period, seven departments of East West University completed self-assessment report and external peer review. He served the external peer review team for quality assurance of a few universities in Bangladesh. He is also involved in outcome based education (OBE) and served the accreditation team of Board of Accreditation for Engineering and Technical Education (BAETE) for accreditation of engineering program in Bangladesh.
Can Bayram - Optoelectronic Devices
Prof. Can Bayram is an Assistant Professor in the Department of Electrical and Computer Engineering of University of Illinois at Urbana-Champaign, IL, USA. He is an expert in III-V materials and photonic and electronic devices. He has performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition (MOCVD) systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon and investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics. Prof. Bayram’s work has been recognized widely. He is the recipient of the 2018 IUPAP Young Scientist Prize in Optics, 2018 IEEE Nanotechnology Council Early Career Award, a 2018 Dean’s Award for Excellence in Research for Assistant Professor, a 2018 Turkish American Scientists & Scholars Association Young Scholar Award, a 2017 NSF CAREER Award, the 2017 CS Mantech Best Student Paper Award, a 2016 AFOSR Young Investigator Award, the 2014 IEEE Electron Devices Society Early Career Award, and the Best Paper Award at the 11th International Conference on Infrared Optoelectronics. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior member status. Prof. Bayram worked as a Postdoctoral Research Scientist in the Silicon Technologies Division at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA from 2011 till 2014. His postdoctoral work at IBM on a novel means of thin film technology achieved record-breaking specific power solar cells and was featured on the cover of Advanced Energy Materials. He has – for the first time – integrated GaN-based devices on CMOS-compatible silicon substrates. This work was highlighted as the frontispiece in the Advanced Functional Materials issue. He demonstrated direct epitaxy of GaN on Graphene for the first time, as published in Nature Communications. Prof. Bayram received the Ph.D. degree from Prof. Manijeh Razeghi, Center for Quantum Devices, EECS of Northwestern University, IL, USA with a focus on Solid State and Photonics in 2011. His thesis work has demonstrated the first ultraviolet regime single photon detection, the first hybrid LED, and the first GaN intersubband devices. He received IEEE Electron Devices and IEEE Photonics Societies’ fellowship awards and the Laser Technology, Engineering and Applications Award from SPIE. He was an IBM and Link Foundation PhD fellow and the recipient of Boeing Engineering and Dow Sustainability Innovation awards.
Electrochemical and Solid-State Letters Advisory Board
Lightwave Technology Steering Committee, Journal Of
Semiconductor Manufacturing Steering Committee, Trans. On
Simon Deleonibus - Fellow
Simon Deleonibus, retired from CEA-LETI on Jan 1st 2016 as Chief Scientist after 30 years of Research on Micro Nanoelectronics Devices Architectures including More Moore More than Moore and Beyond Moore domains emerging devices and architectures: MOSFET scaling technology(bulk, SOI and GeOI), Nanowires FETs ,Tunnel FETs, SET, Non Volatile memories ( Floating gate, RRAM -PCRAM,OxRAM ,CBRAM), Digital,Neuromorphic and Quantum Computing, Sequential/Monolithic and Packaging 3D integration, Interconnect, Field isolation, III-V Power devices, Photovoltaics, MEMS and NEMS, Passive devices, test and modeling/simulation,... and necessary Process steps(lithography - optical and multi ebeams-, etching, thin film deposition and thermal treatments, wafer bonding, physical characterizations,...).
Before joining CEA-LETI, he was with Thomson Semiconductors(1981-1986), where he developed and transferred to production advanced microelectronics technologies, devices and products (microprocessors, video processors, DSP, DAC and ADC, NVM...).
He gained his PhD in Applied Physics from Paris University(1982) on Photovoltaics. He is Visiting Professor at Tokyo Institute of Technology(Tokyo, Japan) since 2014 , National Chiao Tung University(Hsinchu, Taiwan) since 2015 and at Chinese Academy of Science(Beijing, PRC) since 2016 . He is distinguished CEA Research Director(since 2002), IEEE Distinguished Lecturer(since 2004), Fellow of the IEEE (since 2006), Fellow of the Electrochemical Society (since 2015). He was awarded the titles of Chevalier de l’Ordre National du Mérite(2004) and Chevalier de l’Ordre des Palmes Académiques(2011), the 2005 Grand Prix de l’Académie des Technologies. Member of the ITRS since1998, the European Research Council Panel(2007), the Nanosciences Foundation Board of Trustees( 2007).
He was Associate Editor of IEEE Trans. on Elect. Dev.(2008-2014) and Member of the IEEE Electron Devices Society Board of Governors(01/2009-12/2014) and reelected(2016-2018) ; Chair of IEEE EDS Region 8 SRC (2015-2016) ; Secretary of IEEE Electron Devices Society (2016-2017).
- Electron Device Letters
- Journal of the Electron Devices Society
- Transactions on Electron Devices
- Journal of Microelectromechanical Systems
- Journal of Photovoltaics
- Transactions on Device and Materials Reliability
- Transactions on Semiconductor Manufacturing
- EDS Newsletter
- Journal of Electronic Materials
- EDS Guide to State-of-the-Art Electron Devices
- EDS 50th Anniversary Booklet
- IEEE Guidelines for Authors
- Editorials for Authors and Reviewers
- Publication Representatives
- Publication Editors in Chief
- Publications Committee