Regions & Chapters Committee

Lecture Topics: 

- Nano-device physics and technology 
- Device modelling and circuit simulation 
- Interconnect Technology
- Non-volatile memory technology 
- Bio-sensors and circuits

Biography:  Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology.  After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model.  Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program.  In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model.  In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform.  He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.

Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.

Prof. Anisul Haque is currently the Chairperson, Department of Electrical and Electronic Engineering at East West University. He has also served as the Dean, Faculty of Sciences and Engineering, East West University from December 2007 to December 2008. He received his PhD from Clarkson University, USA in 1996 and MS from Texas A & M University, USA in 1992. He also earned another MS from Bangladesh University of Engineering and Technology (BUET), Bangladesh in 1989 and BS from BUET in 1987. Prof. Haque started his academic career as a lecturer in the EEE Department, BUET. He was a professor in the same department until December 2005. He was a Visiting Researcher with the Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Japan, from 2002 to 2004. Prof. Haque has also been a Visiting Faculty Member with Clarkson University (1997, 1998 and 2001), University of Connecticut, Storrs (1999), and the Tokyo Institute of Technology (2005). Prof. Haque’s research interests are in physics, modeling, simulation, and characterization of nano-scale electronic and photonic devices. His current activities include modeling and characterization of MOSFETs on high-mobility substrates, compact modeling of MOSFETs and investigation of novel properties of strained GaInAsP low dimensional structures. He is also interested in engineering education. Prof. Haque has published around 40 papers in refereed international journals. Prof. Haque is a senior member of IEEE and is a life member of Bangladesh Physical Society. He is the founding Chair of IEEE Electron Devices Society, Bangladesh Chapter. Prof. Haque has been serving as a Distinguished Lecturer of IEEE Electron Devices Society since 2009. He is the recipient of the University Grants Commission Award 2006 for research in engineering and technology.

Lecture Topics

- Physics, modeling and characterization of high mobility MOS devices 

- Bifacial PV modules

- Engineering education and accreditation

Muhammad Mustafa Hussain (PhD, ECE, UT Austin, Dec 2005) is a Professor of Electrical Engineering, KAUST (since Fall 2009) and EECS, UC Berkeley (since Spring 2019). He was Program Manager in SEMATECH (2008-2009) and Process Integration Lead for 22 nm node FinFET CMOS in Texas Instruments (2006-2008). His research is focused on futuristic electronics which has received support from DARPA, Boeing, Lockheed Martin, GSK-Novartis, Saudi ARAMCO and SABIC. He has authored 350+ research papers and patents. His students are working in MIT Media Lab, Stanford, Caltech, UC Berkeley, Harvard, UCLA, Intel, TSMC, and DOW Chemicals. He is a Fellow of IEEE, American Physical Society and Institute of Physics (UK), a distinguished lecturer of IEEE Electron Devices Society, and an Editor of IEEE T-ED. His research has been extensively highlighted by international media (CNN, Fox News, Washington Post, WSJ, IEEE Spectrum, etc.) including being featured by Scientific American as one of the top 10 world changing ideas in 2014. He has received 45 international awards including Best Innovation Award, CES 2020, Edison Award 2020, Texas Exes Outstanding Young Alumni Award 2015, IEEE R5 Outstanding Individual Achievement Award 2016, DOW Sustainability Challenge Award 2012, Applied Physics Letters Best Featured Articles 2015, 2019, etc.

Lecture Topics:

- MOS Devices and Technology

Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.

Lecture Topics

Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices

Lecture Topics: Process Variability and Variability Resistant Device Design, Low Power VLSI Design, Temperature Analysis of Advanced MOS Transistor.

Biography: Soumya Pandit received Ph.D. from Indian Institute of Technology, Kharagpur, India in the year 2009 and Master degree in Radio Physics and Electronics in the year 2000. Currently he is associated with the Institute of Radio Physics and Electronics, University of Calcutta as Assistant Professor. The research interest of Dr. Pandit includes device design and optimization for System-on-Chip Applications. Dr. Pandit was the Chair of ED Calcutta Chapter for the year 2014, 2015 and is the founder chapter advisor to ED University of Calcutta Student Branch Chapter.