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Publications and Products Committee
Publications and Products Committee Chair
Joachim N. Burghartz - Fellow

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF
Lecture Topics:
-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering
Vice President of Publications and Products
Joachim N. Burghartz - Fellow

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF
Lecture Topics:
-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering
Publications and Products Committee Members
Constantin Bulucea - Life Fellow

Texas Instruments, Retired
Constantin Bulucea (S'69–M'70–SM'88–F'04- LF'13) was born in Romania, where he received the M.S. and Ph.D. degrees in Electronics from thePolytechnic Institute of Bucharest in 1962 and 1974, respectively. In 1969, hewas granted a one-year government scholarship at the University of California, Berkeley,where he received a M.S. degree in Electrical Engineering. His activeprofessional career spanned 50 years, equally split across the Romanian and USsemiconductor histories.
In Romania, Dr. Bulucea was the scientific director anddirector of the R&D Institute for Electronic Components (ICCE) between 1974and 1986, with assignments of national importance, such as the introduction ofsilicon transistor technology and the development of the process technology forthe Microelectronica MOS/VLSI plant. From that period, his personal legacy includes the creation of theAnnual Conference for Semiconductors (CAS), now an international IEEE event, agraduate course and a book on Linear Integrated Circuits and reference paperson surface breakdown and hot-carrier injection in silicon, originallycommunicated at IEDM and later published in the IEEE Transactions on ElectronDevices and Solid-State Electronics.
In the US, Dr. Bulucea remained on the technical side of thesemiconductors business, so enjoying the last years of Silicon Valley's "HappyScaling". In particular, at NationalSemiconductor, he was the architect of company's 0.25, 0.18, and 0.13 µm CMOSprocesses for analog and mixed-signal applications. Before that, he brought to completionSiliconix's device/process architecture for the next generation of trench powerDMOS transistors, which became an industry standard in the followingyears. He has been active on the R&Darena as a direct contributor and also as the 2003 chairman of the Advanced Devicesand Technologies thrust of the Semiconductor Research Corporation (SRC) and asa member of the Technical Committees of the Bipolar Circuits and TechnologyMeeting (BCTM) and of the VLSI Technology Symposium. Between 2004 and 2012 hewas the editor of IEEE Electron Device Letters (EDL) for analog andmixed-signals technology. Dr. Bulucea has published over 50 technical articlesin international journals and holds 67 US patents with several others pending.
In 2001 Dr. Bulucea was elected an Honorary Member of theRomanian Academy and in 2004 became an IEEE Fellow "for contributions totransistor engineering in the area pf power electronics". In 2011, he became aDistinguished Member of the Technical Staff of Texas Instruments (TI), as aresult of TI's acquisition of National Semiconductor. Dr. Bulucea retired from TI next year, on his72nd birthday, continuing to support company's patent applications that he had authored.
Lecture Topics:
1. “Physics and Technology of Sub-0.25-mm CMOS Devices” (UC Davis Seminar, 2001).
2. “Electronic Properties of Silicon and other <Known Materials>” (Stanford Center for Integrated Research, 2003).
3. “TCAD Revisited – An Engineer’s Point of View” – Excellence in Computer Simulation Symposium of the Network for Computational Nanotechnology (UC Berkeley, 2007).
4. “Devices and Processes for Mixed Signals” (UC San Diego Seminar, 2003 and 2010).
5. Eastern Europe’s Semiconductor Technology - Recollections and Projections (Keynote Address, ESSDERC/ESSCIRC, Bucharest 2013).
Giovanni Ghione - Editor-in-Chief

Department of Electronics and Telecommunications
Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
Vladimir Mitin
Arokia Nathan - Fellow

Professor Arokia Nathan leads a multi-disciplinary research group whose primary focus is on the heterogeneous integration of materials and processes, sensors, energy harvesting and storage devices pertinent to wearable technologies. Formerly a Chair Professor of Photonic Systems and Displays at the University of Cambridge, he is currently a Bye Fellow and Tutor at Darwin College, University of Cambridge. He has over 600 publications, including 5 books, and more that 110 patents and four spin-off companies. He is a Fellow of IEEE, an IEEE Distinguished Lecturer for EDS and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK).
Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics
Samar K. Saha - Life Fellow

Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Sayeef Salahuddin

Enrico Sangiorgi - Fellow

DEIS
Enrico Sangiorgi (F’05) received the Laurea degree in electrical engineering from the University of Bologna, Italy, in 1979. In 1983, 1984, and 1991, he was a Visiting Scientist at the Center for Integrated Systems, Stanford University, Stanford, California, for approximately three years. From 1985 to 2001, he was a consultant at Bell Laboratories, Murray Hill, NJ, where he was a Resident Visitor for more than three years. In 1993, he was appointed Full Professor of Electronics at the University of Udine, Italy, where he started the Electrical Engineering Program and the microelectronic group. In 2002, he joined the University of Bologna, where he is currently in charge of the nanomicro- electronics group at the Campus of Cesena. From 2005 to 2011 he has been the Director of Consorzio Nazionale Interuniversitario per la Nanoeletronica (IU.NET – Italian Universities Nanoelectronic Team), a Legal Consortium grouping nine University Groups active in the field of Nanoelectronics. In 2005 he has been appointed member of the CATRENE Scientific Committee. Since 2006 he is the Vice Chairman of the Scientific Community Council (SCC) of ENIAC (the European Nanoelectronics Initiative Advisory Council). In 2007 he has been appointed member of the Steering Board of AENEAS, the private section of the ENIAC European Technology Platform. In 2008 he has been appointed CEO of Rinnova srl., a new company founded by the University of Bologna aiming to bring research and innovation to SME’s. From 2008 to 2012 he has been the Dean of the Second School of Engineering at the University of Bologna. In 2012 he has been appointed Director of the Department of Electrical and Electronic Engineering – Guglielmo Marconi – of the University of Bologna. Since 2014 he is the Director of the SINANO Institute, International Organization grouping 23 European Institutions active in the field of nanoelectronics.
From 1994 to 2009 he has been Editor of IEEE Electron Device Letters. He has been the Guest Editor of several Special Issues on major scientific journals such as IEEE Transactions on Electron Devices, Solid State Electronics, etc. He has been a member of the Technical Committees of several International Conferences on Electron Devices: IEDM (’91-96; ’04-’06), ESSDERC (‘99-present), INFOS (’95-03), ULIS (’00-‘08), etc. Since 2011 he is a member of the Steering Board of the IEEE Journal of Photovoltaics.
Enrico Sangiorgi is a Fellow of the IEEE, Distinguished Lecturer of the Electron Device Society, he has been Chairman of the Electron Device Society TCAD Technical Committee from 2004 to 2011 member of the Cledo Brunetti Award Committee and Education Award Committee of the EDS. Since 2011 he is elected member of the EDS AdCom. Since 2013 he is a member of the EDS Fellows Evaluation Committee. He has been involved in several European Projects of the 5, 6, and 7 FP with Management Responsibilities, and he has acted as Project Reviewer for the European Commission. The research interests of Enrico Sangiorgi, developed in cooperation with research centers and companies such as Bell Labs., Philips, Infineon Tech., ST Microelectronics, IMEC, and CEA-LETI, include the physics, characterization, modeling, and fabrication of silicon solid-state devices and integrated circuits. In particular he has been working on several aspects of device scaling, its technological, physical, and functional limits, as well as device reliability for silicon CMOS and bipolar transistors. In order to tackle and eventually overcome the hurdles of device scaling, down to the ultimate physical and technological limits, he has devised and developed several original concepts and methods in the characterization and modeling of nanoscale silicon devices. Recently his interests included the physics and modeling of Photo-voltaics devices where he has worked on several aspects of device optimization. Enrico Sangiorgi coauthored 34 papers presented at the International Electron Devices Meeting (IEDM) Conference, and overall more than 250 papers on major journals and conference proceedings.
Lecture Topics: Nanodevices modeling and simulation Photovoltaics devices and technologies Energy Harvesting devices, technologies and systems
Ravi M. Todi

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Hitoshi Wakabayashi

Bin Zhao - Fellow

Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Jesus del Alamo - Editor-in-Chief

Jesus A. del Alamo is the Director of the Microsystems Technology Laboratories at Massachusetts Institute of Technology. He obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid and MS and PhD degrees in Electrical Engineering from Stanford University. From 1985 to 1988 he was with Nippon Telegraph and Telephone LSI Laboratories in Japan and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is the Donner Professor. His current research interests are centered on nanoelectronics based on compound semiconductors. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society. He is the recipient of the Intel Outstanding Researcher Award in Emerging Research Devices, the SRC Technical Excellence Award, and the IEEE Electron Devices Society Education Award. He served as editor of IEEE Electron Device Letters for 9 years.
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