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Society Review & Advisory Committee Ad hoc Committee Chair
Samar K. Saha - Life Fellow
Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Materials Initiative Ad hoc Committee Chair
Francesca Iacopi
School of Electrical and Data Engineering | Faculty of Engineering & IT
Prof. Francesca Iacopi (PhD in EE, KULeuven, 2004) has 20 years’ experience in Materials and Devices for Semiconductor Technologies across industry and academia, with over 120 peer-reviewed publications and 9 granted patents. Her research emphasis is the translation of basic scientific advances in nanomaterials and novel device concepts into a wide range semiconductor technologies, covering Cu/Low-k interconnects, novel TFET devices, advanced packaging and heterogeneous integration. Research Scientist at IMEC (Belgium) over 1999-2009, she then took up a one -year Guest Professorship at the University of Tokyo (Japan). In 2010-2011 she directed the Chip-Package Interaction strategy for GLOBALFOUNDRIES (Ca, USA), before becoming full -time Academic in Australia in 2012, where she invented a process to obtain graphene on silicon wafers, with applications in integrated sensing and energy storage. She was recipient of an MRS Gold Graduate Student Award (2003), an Australian Research Council Future Fellowship (2012), and a Global Innovation Award at TechConnect in Washington DC (2014). She is a Fellow of the Institution of Engineers Australia, Senior Member IEEE and she is currently Head of Discipline, Communications and Electronics, of the Faculty of Engineering and IT at the University of Technology Sydney.
Lecture Topics
- Graphene on cubic silicon carbide: a platform on silicon for More-Than-Moore integrated technologies
Materials Initiative Ad hoc Committee Member
Paul Berger - Fellow
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
Edmundo A. Gutierrez-D. - Solid State Device Phenomena; Emerging Technologies and Devices
for Astrophysics, Mexico
Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
Kazunari Ishimaru
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Angus Rockett - Editor Thin Film PV and PV Characterization
USA
ANGUS ROCKETTis a Professor in the Department of Materials Science and Engineering at the University of Illinois. He was President in 2011 of and is a Fellow of the American Vacuum Society. He was the 2012 Program Chair and is the 2016 General Chair of the IEEE Photovoltaic Specialists Conference. He has held numerous other offices in the management of this and other international conferences. He was a rotating Research Program Administrator at the Office of Basic Energy Sciences at the U.S. Department of Energy in 2000. He holds a Sc.B. in Physics from Brown University (1980) and a Ph.D. in Materials Science from the University of Illinois (1986). He has won numerous awards for teaching and advising from the College of Engineering at the University of Illinois. His teaching has ranged from introductions to materials engineering for business and engineering students to senior and graduate courses on electronic materials (including a recent book The Materials Science of Semiconductors). His research has concerned ion-assisted growth of semiconductors and fundamental science of growth of materials by molecular beam epitaxy. This was extended to theoretical treatments of the same subject by lattice Monte Carlo and density functional theory methods. At the same time he worked on sputtered hard coatings deposited by reactive magnetron sputtering. He has studied the basic science of solar cell materials and the operation of solar cell devices for 28 years using virtually all of the common materials microchemical and microstructural analysis techniques from SIMS and TEM to STM and photoluminescence. He has also worked on self-assembled nanostructures, MEMS devices, silicide reactions for VLSI contacts, Si-Ge oxidation kinetics for gate dielectrics, superconducting cavity resonators as temperature probes, and optical spectroscopic analysis of combustion. He is an AVS Short Course Instructor for the Photovoltaics and Sputter Deposition of Thin Films short courses. He has also given short courses on thin film deposition processes and fundamentals of thin film solar cells at the IEEE Photovoltaic Specialists Conference, on characterization of photovoltaic materials at the Materials Research Society, and has given short courses on sputter depostion, thin films and photovoltaics in China, Mexico, Sweden, Israel, Brazil, Argentina, and elsewhere. He has published over 190 papers and has given many invited and plenary talks on subjects related to his research. Angus is also a program evaluator for the Accrediation Board for Engineering and Technology (ABET) and an associate editor of the Journal of Photovoltaics.
Future Directions Ad hoc Committee Chair
Paul Berger - Fellow
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
75th Anniversary of the Transistor Ad hoc Committee Chair
Manoj Saxena - Senior Member
University of Delhi
Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.
Lecture Topics:
-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications
75th Anniversary of the Transistor Ad hoc Committee Member
Navakanta Bhat
Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
John Dallesasse
University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Kazunari Ishimaru
Arokia Nathan - Fellow
Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.
Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics
Murty Polavarapu
Mail Stop MVA01-016
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Samar K. Saha - Life Fellow
Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Manoj Saxena - Senior Member
University of Delhi
Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.
Lecture Topics:
-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Merlyne de Souza
Chair in Microelectronics, EEE Department
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994). I joined as a Junior Research fellow in ‘95, was promoted to a Senior Research fellow in ‘98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003. I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
EDS Magazine Ad hoc Advisory Committee Chair
Joachim N. Burghartz - Fellow
Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF
Lecture Topics:
-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering
EDS Magazine Ad hoc Advisory Committee Member
John Dallesasse
University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Giovanni Ghione - Editor-in-Chief
Department of Electronics and Telecommunications, Torino, Italy
Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Manoj Saxena - Senior Member
University of Delhi
Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.
Lecture Topics:
-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Daniel Tomaszewski
D.Tomaszewski (M’2014) received M.Sc degree in electronics (spec. electronic technology) from Warsaw University of Technology in 1980, and Ph.D degree in electrical engineering (spec. solid-state device electronics) from Instytut Technologii Elektronowej, Warsaw in 1998.
Douglas P. Verret - Fellow
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
IEEE Ad hoc on Climate Change Committee Chair
Paul Berger - Fellow
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
Fundraising Ad hoc Committee Chair
Meikei Ieong - Fellow
Chief Technology Officer
Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.
Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.
He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.
