Awards Committee

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Lecture Topics:

1) GPU based parasitic capacitance extractor for VLSI design
2) Modeling and characterization of VLSI interconnects

Constantin Bulucea (S'69–M'70–SM'88–F'04- LF'13) was born in Romania, where he received the M.S. and Ph.D. degrees in Electronics from thePolytechnic Institute of Bucharest in 1962 and 1974, respectively. In 1969, hewas granted a one-year government scholarship at the University of California, Berkeley,where he received a M.S. degree in Electrical Engineering. His activeprofessional career spanned 50 years, equally split across the Romanian and USsemiconductor histories.

In Romania, Dr. Bulucea was the scientific director anddirector of the R&D Institute for Electronic Components (ICCE) between 1974and 1986, with assignments of national importance, such as the introduction ofsilicon transistor technology and the development of the process technology forthe Microelectronica MOS/VLSI plant. From that period, his personal legacy includes the creation of theAnnual Conference for Semiconductors (CAS), now an international IEEE event, agraduate course and a book on Linear Integrated Circuits and reference paperson surface breakdown and hot-carrier injection in silicon, originallycommunicated at IEDM and later published in the IEEE Transactions on ElectronDevices and Solid-State Electronics.

In the US, Dr. Bulucea remained on the technical side of thesemiconductors business, so enjoying the last years of Silicon Valley's "HappyScaling". In particular, at NationalSemiconductor, he was the architect of company's 0.25, 0.18, and 0.13 µm CMOSprocesses for analog and mixed-signal applications. Before that, he brought to completionSiliconix's device/process architecture for the next generation of trench powerDMOS transistors, which became an industry standard in the followingyears. He has been active on the R&Darena as a direct contributor and also as the 2003 chairman of the Advanced Devicesand Technologies thrust of the Semiconductor Research Corporation (SRC) and asa member of the Technical Committees of the Bipolar Circuits and TechnologyMeeting (BCTM) and of the VLSI Technology Symposium. Between 2004 and 2012 hewas the editor of IEEE Electron Device Letters (EDL) for analog andmixed-signals technology. Dr. Bulucea has published over 50 technical articlesin international journals and holds 67 US patents with several others pending.

In 2001 Dr. Bulucea was elected an Honorary Member of theRomanian Academy and in 2004 became an IEEE Fellow "for contributions totransistor engineering in the area pf power electronics". In 2011, he became aDistinguished Member of the Technical Staff of Texas Instruments (TI), as aresult of TI's acquisition of National Semiconductor. Dr. Bulucea retired from TI next year, on his72nd birthday, continuing to support company's patent applications that he had authored.

Lecture Topics:

1. “Physics and Technology of Sub-0.25-mm CMOS Devices” (UC Davis Seminar, 2001).

2. “Electronic Properties of Silicon and other <Known Materials>” (Stanford Center for Integrated Research, 2003).

3. “TCAD Revisited – An Engineer’s Point of View” – Excellence in Computer Simulation Symposium of the Network for Computational Nanotechnology (UC Berkeley, 2007).

4. “Devices and Processes for Mixed Signals” (UC San Diego Seminar, 2003 and 2010). 

5. Eastern Europe’s Semiconductor Technology - Recollections and Projections (Keynote Address, ESSDERC/ESSCIRC, Bucharest 2013).

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Simon Deleonibus, retired from CEA-LETI on Jan 1st 2016 as Chief Scientist after 30 years of Research on Micro Nanoelectronics Devices Architectures. Before joining CEA-LETI, he was with Thomson Semiconductors(1981-1986), where he developed and transferred to production advanced microelectronics devices and products. He gained his PhD in Applied Physics from Paris University(1982). He is Visiting Professor at Tokyo Institute of Technology(Tokyo, Japan) since 2014 , National Chiao Tung University(Hsinchu, Taiwan) since 2015 and at Chinese Academy of Science(Beijing, PRC) since 2016 . He is distinguished CEA Research Director(2002), IEEE Distinguished Lecturer(2004), Fellow of the IEEE (2006), Fellow of the Electrochemical Society (2015). He was awarded the titles of Chevalier de l’Ordre National du Mérite(2004) and Chevalier de l’Ordre des Palmes Académiques(2011), the 2005 Grand Prix de l’Académie des Technologies. He is member of the ITRS since1998, the European Research Council Panel(2007), the Nanosciences Foundation Board of Trustees( 2007). He was Associate Editor of IEEE Trans. on Elect. Dev.(2008-2014) and Member of the IEEE Electron Devices Society Board of Governors(01/2009-12/2014) and reelected(2016-2018) ; Chair of IEEE EDS Region 8 SRC (2015-2016) ; Secretary of IEEE Electron Devices Society (2016-2017).

Lecture Topics:

- Nanoelectronics in beyond Moore's Law Era

- Nanotechnology: development of practical systems and nano-micro-macro integration.

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.

Lecture Topics: Reliability and scaling of CMOS, SiGe Reliability  

Lecture Topics:

- Nanoelectronics in beyond Moore's Law Era

- Nanotechnology: development of practical systems and nano-micro-macro integration.

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Albert Wang received the BSEE degree from Tsinghua University, China, and the PhD EE degree from State University of New York at Buffalo, USA, in 1985 and 1996, respectively. From 1995 to 1998, he was with National Semiconductor Corporation, USA. From 1998 to 2007, He was an Assistant and Associate Professor in the Department of Electrical and Computer Engineering at the Illinois Institute of Technology, Chicago, USA. Since 2007, He has been a Professor of Electrical and Computer Engineering at the University of California, Riverside, USA, where he is Director for the Laboratory for Integrated Circuits and Systems and Director for the University of California system-wide Center for Ubiquitous Communications by Light. His research covers Analog/Mixed-Signal/RF ICs, Integrated Design-for-Reliability, 3D Heterogeneous Integration, IC CAD and Modelling, Biomedical Electronics, Emerging Nano Devices and Circuits, and LED-based Visible Light Communications. Wang received the CAREER Award from the National Science Foundation, USA. He published one book and more than 250 papers, and holds 13 US patents. Wang was editor and guest editor for IEEE Electron Device Letters, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Circuits and Systems II, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices. He has been an IEEE Distinguished Lecturer for IEEE Electron Devices Society, IEEE Solid-State Circuits Society and IEEE Circuits and Systems Society. He is Sr. Past President (2018-2019), and was Jr. Past President (2016-2017) and President (2014-2015) of IEEE Electron Devices Society. He was Chair of the IEEE CAS Analog Signal Processing Technical Committee (ASPTC) and committee member for the SIA International Technology Roadmap for Semiconductor (ITRS). He is IEEE 5G Initiative member. He is a member of IEEE Fellow Committee. He was General Chair (2016) and TPC Chair (2015) for IEEE RFIC Symposium. He served as committee member for many IEEE conferences, including IEDM, EDTM, BCTM, ASICON, IEDST, ICSICT, CICC, RFIC, APC-CAS, ASP-DAC, ISCAS, IPFA, ICEMAC, NewCAS, ISTC, IRPS, AP-RASC, MAPE, EDSSC, MIEL, etc. Wang is an IEEE Fellow and AAAS Fellow.

Lecture Topics:

- Nanoelectronics in beyond Moore's Law Era

- Nanotechnology: development of practical systems and nano-micro-macro integration.

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Lecture Topics: MEMS, sensors, ISFET, CNT and graphene, Advanced CMOS processes

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Lecture Topics:

> Analog/Mixed-Signal/RF IC and Enabling Technologies
> High Performance VLSI Interconnect

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Lecture Topics:

1) GPU based parasitic capacitance extractor for VLSI design
2) Modeling and characterization of VLSI interconnects

Lecture Topics: * Low Frequency Noise in state of the art and emerging semiconductor technologies * Radiation Hardness of State-of-the-art Si and Ge-Based CMOS Technologies * Contact Technology Schemes for Advanced Ge and III-V CMOS Technologies * Trends and Challenges in Micro- and Nanoelectronics for the Next Decade

Lecture Topics: 

1. Bioimagers for Health and Environmental Applications 2. Biosensors - Life at the intersection of Engineering and Sciences 3. Photodetectors - From Quantum Dot to Silicon Imagers 4. Information and Communications Technologies for Ubiquitous Healthcare 5. Smart Home Technologies Towards Better Healthcare 6. Flexible Electronics - Opportunities and Challenges 7. Nanobonding – A Key Technology for Emerging Health & Environmental Application

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Lecture Topics:

- Recent Advances in Photonic Devices for RF/Wireless

- Semiconductor Wafer Bonding Technology for Device Integration

- Green Campus projects

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Research Areas: Functional nanomaterials in MEMS and NEMS (e.g. carbon nanotube sensors, ultra low power sensors), Polymer microsystems (e.g. magnetic polymers, biodegradable polymers), Advanced MEMS (e.g. micro thermoelectric generators, large deflection actuators by polymer springs in MEMS), Fabrication technology (integration of functional nanomaterials on larger areas)

Professional Memberships: IEEE/EDS

Biography: Christofer Hierold has been Professor of Micro and Nanosystems at the Swiss Federal Institute of Technology in Zurich (ETH) since April 2002. Further, he is Executive Coordinator ETH Zurich of the Binnig and Rohrer Nanotechnology Center (BRNC) at Ruschlikon. Before he joined ETH Zurich in 2002 he was with Siemens AG, Corporate Research, and Infineon Technologies AG in Germany. In 1990 he graduated from Technical University Munich (TUM) with a Dr.-Ing. Degree in Engineering Sciences.

Christofer Hierold is Co-Chair of the Steering Committee of the EUROSENSORS conference, and a member of the Steering Committees of both MEMS and TRANSDUCERS. He served as General Co-Chair of MEMS 2009, and is Program Chair of TRANSDUCERS 2013. Professor Hierold is a member of the Swiss Academy of Engineering Sciences (SATW).

Research Areas: Integrated micromechanical signal processors and integrated sensors, merged circuit/micromechanical technologies, RF communications, integrated circuit design and technology, short- and long-term stability in micromechanical devices

Professional Memberships: IEEE/EDS, IEEE/SSCS, IEEE/UFFC

Biography: Clark T.-C. Nguyen received the B. S., M. S., and Ph.D. degrees from the University of California at Berkeley in 1989, 1991, and 1994, respectively, all in Electrical Engineering and Computer Sciences. In 1995, he joined the faculty of the University of Michigan, Ann Arbor, where he was a Professor in the Department of Electrical Engineering and Computer Science up until mid-2006. In 2006, he joined the Department of Electrical Engineering and Computer Sciences at the University of California at Berkeley, where he is now a Professor and a co-Director of the Berkeley Sensor & Actuator Center. In 2001, Prof. Nguyen founded Discera, Inc., a company aimed at commercializing communication products, based upon MEMS technology, with an initial focus on the very vibrating micromechanical resonators pioneered by his research. He served as Vice President and Chief Technology Officer (CTO) of Discera until mid-2002, at which point he joined the Defense Advanced Research Projects Agency (DARPA) on an IPA, where he served for 3.5 years as the Program Manager of the MEMS, Micro Power Generation (MPG), Chip-Scale Atomic Clock (CSAC), MEMS Exchange (MX), Harsh Environment Robust Micromechanical Technology (HERMIT), Micro Gas Analyzers (MGA), Radio Isotope Micropower Sources (RIMS), RF MEMS Improvement (RFMIP), Navigation-Grade Integrated Micro Gyroscopes (NGIMG), and Micro Cryogenic Coolers (MCC) programs, in the Microsystems Technology Office of DARPA. Prof. Nguyen is a Fellow of the IEEE and presently serves as the Vice President for Frequency Control in the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society.

Research Areas: (1) Micro sensors, actuators and integrated sensors, (2) Microfabrication especially etching and lithography (UV, X-ray), (3) Nanofabrication, (4) DNA nanotechnology, (5) Characterization of thin film mechanical properties

Professional Memberships: IEEE

Biography: Osamu Tabata had been with the Toyota Central Research and Development Laboratories from 1981.  In 1996, he joined the Department of Mechanical Engineering, Ritsumeikan University, Japan. In 2003, he moved to Kyoto University, Japan. From September to December 2000, he was a guest Professor of Institute of Microsystem Technology, University of Freiburg, Germany, from January to March 2001, he was a guest Professor of ETH Zurich, Switzerland. He had visiting Professorship for senior international scientists of the Chinese Academy of Science in 2010. He is an external senior research fellow at Freiburg Institute for Advanced Studies (FRIAS) from May 2010 and a guest Professor of Huazong University of Science and Technology from 2011. He served as a General Chair of MEMS2003 and NEMS2012, and general co-chair of NMDC2012. Currently he is an associate editor of several Journals in the field of Nano/Microsystems and N/MEMS. Also he is serving as a program committee member of many International Conferences. He is interested in the research to realize a unique and novel nanosystem by assembling the various functional components such as a microchip, a particle, a microcapsule, DNA origami, a cell, etc., with sizes ranging from the nanometer to micrometer scale on a few mm square MEMS substrate.