Awards Committee

Research Areas: (1) Micro sensors, actuators and integrated sensors, (2) Microfabrication especially etching and lithography (UV, X-ray), (3) Nanofabrication, (4) DNA nanotechnology, (5) Characterization of thin film mechanical properties

Professional Memberships: IEEE

Biography: Osamu Tabata had been with the Toyota Central Research and Development Laboratories from 1981. In 1996, he joined the Department of Mechanical Engineering, Ritsumeikan University, Japan. In 2003, he moved to Kyoto University, Japan. October 2019, he moved to Kyoto University of Advanced Science and he is serving as a Founding Dean of New Faculty of Engineering from April 2020. From September to December 2000, he was a guest Professor of Institute of Microsystem Technology, University of Freiburg, Germany, from January to March 2001, he was a guest Professor of ETH Zurich, Switzerland. He had visiting Professorship for senior international scientists of the Chinese Academy of Science in 2010. He is an external senior research fellow at Freiburg Institute for Advanced Studies (FRIAS) from May 2010 and a guest Professor of Huazong University of Science and Technology from 2011. He served as a General Chair of MEMS2003 and NEMS2012, and general co-chair of NMDC2012. Currently he is an associate editor of several Journals in the field of Nano/Microsystems and N/MEMS. Also he is serving as a program committee member of many International Conferences. He is interested in the research to realize a unique and novel nanosystem by assembling the various functional components such as a microchip, a particle, a microcapsule, DNA origami, a cell, etc., with sizes ranging from the nanometer to micrometer scale on a few mm square MEMS substrate.  

Paul R. Berger

Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA

Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland

Lecture Topics:

• Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
• Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
• Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
• Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
• Nitride-Based Resonant Tunneling Structures for Terahertz Gain
• Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
• Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA

Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.

Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.

He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.

He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.

Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Lecture Topics:

-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore.  As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres. 

Lecture Topics: 

- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.

- Interface Physics and Analysis Challenges in Silicon Nanodevices

- Are the Progressions towards the “Benefit of Humanity”? -  A Failure Analyst’s View

Lecture Topics:

- Analog/Mixed-Signal/RF IC and Enabling Technologies 
- High Performance VLSI Interconnect

Jesus A. del Alamo is the Director of the Microsystems Technology Laboratories at Massachusetts Institute of Technology. He obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid and MS and PhD degrees in Electrical Engineering from Stanford University. From 1985 to 1988 he was with Nippon Telegraph and Telephone LSI Laboratories in Japan and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is the Donner Professor. His current research interests are centered on nanoelectronics based on compound semiconductors. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society. He is the recipient of the Intel Outstanding Researcher Award in Emerging Research Devices, the SRC Technical Excellence Award, and the IEEE Electron Devices Society Education Award. He served as editor of IEEE Electron Device Letters for 9 years.

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Lecture Topics:

-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering

Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

Professor Arokia Nathan leads a multi-disciplinary research group whose primary focus is on the heterogeneous integration of materials and processes, sensors, energy harvesting and storage devices pertinent to wearable technologies. Formerly a Chair Professor of Photonic Systems and Displays at the University of Cambridge, he is currently a Bye Fellow and Tutor at Darwin College, University of Cambridge. He has over 600 publications, including 5 books, and more that 110 patents and four spin-off companies. He is a Fellow of IEEE, an IEEE Distinguished Lecturer for EDS and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK).

Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Lecture Topics:

-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering

Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.

Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).

Marcelo Antonio Pavanello (S´99-M´02-SM´05) received the Electrical Engineering degree from FEI University in 1993, receiving the award “Instituto de Engenharia” given for the best student among all the modalities of engineering programs offered at FEI. He received the M. Sc. and Ph. D. degrees in 1996 and 2000, respectively, in Electrical Engineering (Microelectronics) from University of São Paulo, Brazil. From August to December 1998 he was with Laboratoire de Microélectronique from Université Catholique de Louvain (UCL), Belgium, working in the fabrication and electrical characterization of novel channel-engineered Silicon-On-Insulator (SOI) transistors. From 2000 to 2002 he was with the Center of Semiconductor Components and Nanotechnologies, State University of Campinas, Brazil, where he worked as a post-doctoral researcher in the development of a CMOS n-well process. Since 2003 he joined FEI University where he is now Full Professor at Electrical Engineering Department. In 2008 he has been with UCL as a visiting professor. Dr. Pavanello is Senior member of The IEEE and Brazilian Microelectronics Society. He is also Research Associate to the National Council for Scientific Development (CNPq), Brazil. Since 2007 he serves as IEEE Electron Devices Society (EDS) Distinguished Lecturer and has been nominated to the Compact Modeling Technical Committee of EDS in 2018. He is author and co-author of more than 300 technical papers in peer-reviewed journals and conferences, and author/editor of 6 books. Dr. Pavanello coordinates several research projects fomented by Brazilian agencies like FAPESP, CNPq and Capes. He also supervised several Ph. D. dissertations, M. Sc. thesis and undergraduate projects in Electrical Engineering. His current interests are the compact modeling, fabrication, electrical characterization and simulation of SOI CMOS transistors with multiple gate configurations and silicon nanowires; the wide temperature range of operation of semiconductor devices; the digital and analog operation of novel channel-engineered SOI devices and circuits.

Lecture Topics:

-Junctionless Nanowire Transistors: Electrical Characteristics and Compact Modeling;
-Physics and Electrical Characterization of Multiple-Gate Transistors (Nanowires and FInFETs) in a Wide Temperature Range of Operation;
-Impact of Channel Engineering on SOI Devices and Circuits;
-Operation and Modeling of Silicon-On-Insulator MOSFETs in Cryogenic Environments.

Research Areas: (1) Micro sensors, actuators and integrated sensors, (2) Microfabrication especially etching and lithography (UV, X-ray), (3) Nanofabrication, (4) DNA nanotechnology, (5) Characterization of thin film mechanical properties

Professional Memberships: IEEE

Biography: Osamu Tabata had been with the Toyota Central Research and Development Laboratories from 1981. In 1996, he joined the Department of Mechanical Engineering, Ritsumeikan University, Japan. In 2003, he moved to Kyoto University, Japan. October 2019, he moved to Kyoto University of Advanced Science and he is serving as a Founding Dean of New Faculty of Engineering from April 2020. From September to December 2000, he was a guest Professor of Institute of Microsystem Technology, University of Freiburg, Germany, from January to March 2001, he was a guest Professor of ETH Zurich, Switzerland. He had visiting Professorship for senior international scientists of the Chinese Academy of Science in 2010. He is an external senior research fellow at Freiburg Institute for Advanced Studies (FRIAS) from May 2010 and a guest Professor of Huazong University of Science and Technology from 2011. He served as a General Chair of MEMS2003 and NEMS2012, and general co-chair of NMDC2012. Currently he is an associate editor of several Journals in the field of Nano/Microsystems and N/MEMS. Also he is serving as a program committee member of many International Conferences. He is interested in the research to realize a unique and novel nanosystem by assembling the various functional components such as a microchip, a particle, a microcapsule, DNA origami, a cell, etc., with sizes ranging from the nanometer to micrometer scale on a few mm square MEMS substrate.