Paul Rappaport Award

rappaport photo

The Paul Rappaport Award was established in 1984 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to IEEE Transactions on Electron Devices. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the EDS Board of Governors Meeting in conjunction with the International Electron Devices Meeting.

 

 

Award Winners

   
YearIndividualsPaper
2018
Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja Bodduluri
Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology
2017 L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. Collaert Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
2016

Takatoshi Tsujimura 
Takeshi Hakii 
Suguru Noda

A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Rollto-Roll Manufacturing
2015

Stefano Ambrogio 
Simone Balatti
Vincent McCaffrey
Daniel C. Wang
Daniele Ielmini

Noise-Induced Resistance Broadening in Resistive Switching Memory  Part I: Intrinsic Cell Behavior / Part II: Array Statistics
2014 Sylvain Barraud 
Jean-Michel Hartmann 
Virginie Maffini-Alvaro 
Lucie Tosti 
Vincent Delaye 
Dominique Lafond
"Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors
2013

Rui Zhang 
Po-Chin Huang 
Ju-Chin Lin 
Noriyuki Taoka 
Mitsuru Takenaka 
Shinichi Takagias

 

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

2012 Kelin Kuhn Considerations for Ultimate CMOS Scaling
2011 Tibor Grasser 
Ben Kaczer 
Wolfgang Goes 
Hans Reisinger 
Thomas Aichinger 
Philipp Hehenberger 
Paul-Jürgen Wagner 
Franz Schanovsky 
Jacopo Franco 
María Toledano Luque 
Michael Nelhiebel
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
2010 Yusaku Kato 
Tsuyoshi Sekitani 
Yoshiaki Noguchi 
Tomoyuki Yokota 
Makoto Takamiya 
Takayasu Sakurai 
Takao Someya
Large-Area Flexible Ultrasonic Imaging System With an Organic-Transistor Active Matrix
2009 Takao Someya 
Tsuyoshi Sekitani 
Koichiro Zaitsu 
Yoshiaki Noguchi 
Kiyoshiro Ishibe 
Makoto Takamiya 
Takayasu Sakurai
Printed Nonvolatile Memory for a Sheet-Type Communication System
2008 Kah-Wee Ang 
Jian Qiang Lin 
Ganesh S. Samudra 
Shih-Hang Tung 
Narayanan Balasumbramanian 
Yee-Chia Yeo
Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance
2007 Azad Naeemi 
James D. Meindl
Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems
2006 Billy Lau 
Alfred Forchel 
Lukas Worschech 
David Hartmann
Cascaded Quantum Wires and Integrated Design for Complex Logic Functions: Nanoelectronic Full Adder
2005 Kailash Gopalakrishnan 
Peter B. Griffin 
James D. Plummer 
Raymond Wood 
Christoph Jungemann
Impact Ionization MOS (I-MOS) - Part I: Device and Circuit Simulations and Part II: Experimental Results
2004 Franco Stellari 
Peilin Song 
James C. Tsang 
Moyra K. McManus 
Mark B. Ketchen
Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current
2003 Ken Uchida 
Junji Koga 
Ryuji Ohba 
Akira Toriumi
Programmable Single - Electron Transistor Logic for future Low-Power Intelligent LSI : Proposal and Room - Temperature Operation
2002 Yee Chia Yeo 
Vivek Subramanian 
Jakub Kedzierski 
Peiqi Xuan 
Tsu-Jae King 
Jeffrey Bokor 
Chenming Hu
"Design & Fabrication of 50-nm Thin-Body p-MOSFETS with a Silicon-Germanium Heterostructure Channel"
 2001 Ioannis Kymissis 
Christos D. Dimitrakopoulos 
Sampath Purusothaman 
Raymond M. Warner, Jr.
High Performance Bottom Electrode Organic Thin-Film Transistors, which appeared in the June 2001 issue of T-ED.
 Microelectronics: Its Unusual Origin and Personality, which appeared in the November 2001 issue of T-ED.
 2000 Didier Dutartre 
Malgorzata Jurczak 
Damien Lenoble 
Jose Martins 
Stephanie Monfray 
Roland Pantel 
M. Paoli 
Jorge Luis Regolini 
Pascal Ribot 
Thomas Skotnicki 
Beatrice Tormen
 Silicon-on-Nothing (SON)--an Innovative Process for Advanced CMOS, which appeared in the November, 2000 issue of Transactions on Electron Devices.
 1999 Pallab Bhattacharya 
Kishore K. Kamath 
Jasprit Singh 
David Klotzkin 
Jamie Phillips 
Hong-Tao Jiang 
Nalini Chervela 
Theodore B. Norris 
Tom Sosnowski 
Joy Laskar 
M. Ramana Murty
In (Ga)As/GaAs Self-Organized Quantum Dot Lasers: DC and Small-Signal Modulation Properties
 1998 Yujun Li 
Tso-Ping Mai
A Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices
 1997 Dimitri A. Antoniadis 
Anantha P. Chandrakasan 
Carlin J. Vieri 
Isabel Y. Yang
Back-Gated CMOS on SOIAS For Dynamic Threshold Voltage Control
 1996 Chris J. Diorio 
Paul E. Hasler 
Carver A. Mead 
Bradley A. Minch
A Single-Transistor Silicon Synapse T-ED/ED-43/11
 1995 Herbert Lifka 
Ger M. Paulzen 
Henk G. Pomp 
Pierre H. Woerlee 
Reinout Woltjer
Three Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFETS  T-ED/ED-42/1
 1994 Takashi Hashimoto 
Tomoyuki Ishii 
Takashi Kobayashi 
Fumio Murai 
Koichi Seki 
Kazuo Yano
Room-Temperature Single-Electron Memory  T-ED/ED-41/9
 1993 Hisashi Hara 
Hiroshi Iwai 
Toyota Morimoto 
Masakatsu Tsuchiaki
A New Charge Pumping Method for Determining the Spatial Distribution of Hot-Carrier- Induced Fixed Charge in p- MOSFETS's T-ED/ED-40/10
 1992 April S. Brown 
Linda M. Jelloian 
Loi D. Nguyen 
Mark A. Thompson
50-nm Self-Aligned Gate Pseudomorphic AllnAs/GalnAs High Electron Mobility Transistors  T-ED/ED-39/9
 1991 Hiroshi Fukuda 
Akira Imai 
Shinji Okazaki 
Tsuneo Terasawa
New Approach to Resolution Limit and Advanced Image Formation Techniques in Optical Lithography   T-ED/ED-38/1
 1990 Khalil Najafi 
Kenichiro Suzuki 
Kensall D. Wise
A 1024-Element High-Performance Silicon Tactile Imager  T-ED/ED-37/8
 1989 James F. Gibbons 
Judy L. Hoyt 
Clifford A. King
Bandgap and Transport Properties of Si1-xGex by Analysis of Nearly Ideal Si/Si1-xGex/Si Heterojunction Bipolar Transistors  T-ED/ED-36/10
 1988 Diane R. Ahrendt 
Yeou-Chong 
Vladimir F. Drobny 
Valdis E. Garuts 
Robert D. Herman 
Eric E. Lane 
June S. Lee 
Evan E. Patton 
Tadanori Yamaguchi 
Simon Yu 
Todd H. Yuzuriha
Process and Device Performance of a High-Speed Double Poly-Si Bipolar Technology Using Process Borosenic-Poly with Coupling-Base Implant  T-ED/ED-35/8
 1987 Richard B. True Emittance and the Design of Beam Formation, Transport, and Collection Systems in Periodically Focused TWT's  T-ED/ED-34/2
 1986 Ben T. Ebihara 
Peter Ramins
Improvements in the MDC and TWT Overall Efficiency Through the Application of Carbon Surfaces Electrode   T-ED/ED-33/11
 1985 Roger Epworth 
Linus A. Fetter 
Richard E. Howard 
Lawrence D. Jackel 
Paul M. Mankiewich 
Kristan S. Ralls 
William J. Skocpol 
Donald M. Tennant
Single Electron Switching Events in MOSFET's  Nanometer-Scale Si, T-ED/ED- 32/
 1984 Shojiro Asai 
Norikazu Hashimoto 
Kiyoo Itoh 
Tokuo Kure 
Hideo Sunami 
Toru Toyabe
A Corrugated Capacitor Cell (CCC)  T-ED/ED- 31/6
 1983 Jaroslav Hynecek Electron-Hole Recombination Antiblooming for Virtual-Phase CCD Imager  T-ED/ED-30/8
*1982 R. Fabian Pease
David B. Tuckerman
High-Performance Heat Sinking for VLSI  EDL/ED-2/5
 
*Selected by EDS BoG as first Paul Rappaport Award winner. IEEE did not approve the award until 1983.
 

Although the IEEE Electron Devices Society (EDS) is pleased to invite all individuals and groups in the OFAC embargoed countries to submit nominations for IEEE EDS Awards, the IEEE EDS cannot provide any award monies to members from such countries at this time.