Lester F. Eastman Award

 

 

 

The Lester F. Eastman Award is named after the late Professor Lester F. Eastman. Professor Eastman is one of the world leaders in the physics and technology of compound semiconductor materials and devices. He has invented, fabricated, and investigated many novel semiconductor materials and devices, and his work on so many occasions has resulted in breakthroughs enabling important practical applications. The best solid-state device groups have followed his ideas with great success, and his former students and associates work in leadership positions in hundreds of leading companies, research laboratories and Universities in the United States and around the globe.

 

Lester F. Eastman Award Committee

 

Description:  To recognize individuals with outstanding achievement in high-performance semiconductor devices

 

Established:  2019

 

Prize: $2,000, a certificate.  Only 1 winner selected each year and no award will be given if no qualified candidate is identified.

 

Funding:  Funded by the Lester F. Eastman endowment fund and the IEEE Electron Devices Society

 

Eligibility:  Any person active in the field of semiconductor devices, whether or not they are members of the IEEE Electron Devices Society, are eligible for the award. 

 

Basis for Judging:  Criteria considered by the selection committee will include an impact on the field of semiconductor devices. Evidence should include examples of leadership and professional interaction.  Tangible supporting evidence in the form of publications, patents, and/or transition(s) to practice should be provided. 

 

Deadline:  July 1st

 

Presentation: Annually, at the International Electron Devices Meeting (IEDM)

 

Nomination form:  nomination form link