Leo Esaki Award

 

The Leo Esaki Award was established in 2019 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the International Electron Devices Meeting.

 

 Congratulations to the 2021 IEEE EDS Leo Esaki Award Winners for the winning paper

 Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks

 

Award Winners

Year	Individuals	Paper
2021	Sung-Tae Lee, Gyuho Yeom, Joon Hwang, Hyseongsu Kim, Honam Yoo, Byung-Gook Park and Jong-Ho Lee	Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks
2020	Wei-Xiang You, Pin Su and Chenming Hu	A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET
2019	Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, and Toshiro Hiramoto	Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process