Leo Esaki Award
The Leo Esaki Award was established in 2019 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the International Electron Devices Meeting.
Congratulations to the 2020 IEEE EDS Leo Esaki Award Winners for the winning paper
A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET”
|2020||Wei-Xiang You, Pin Su and Chenming Hu||A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET|
|2019||Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, and Toshiro Hiramoto||Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process|