Leo Esaki Award
The Leo Esaki Award was established in 2019 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. It is presented annually and the recipient(s) is awarded a certificate and a check for $2,500, presented at the International Electron Devices Meeting.
Congratulations to the 2019 IEEE EDS Leo Esaki Award Winners for the winning paper
Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process
|2019||Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, and Toshiro Hiramoto||Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process|