Dr. Phil Rutter
Dr. Phil Rutter, Nexperia
Phil Rutter is the Power MOSFET technology architect at Nexperia. He has worked at NNexperia (formerly NXP Semiconductors & Philips Semiconductors) since 1996 and his career there has involved a wide spectrum of power devices ranging from high voltage DMOS, SOI LDMOS, and GaN HEMTs, to low voltage Schottky diodes and trench MOSFETs. As manager of the Advanced Devices group he is currently responsible for developing next generation power MOSFETs with primary focus on voltages ≤60V. His research interests involve optimising both technology and design to specific applications, which arose from his team’s work in bringing the world’s first DrMOS product to market in 2004.
Phil gained a MEng in Electronics at Southampton University, UK in 1992 and was awarded, an MSc and PhD in Semiconductor Devices at University of Manchester in 1993 and 1995 respectively. He has co-authored many peer reviewed papers and currently holds 20 granted US patents. He is currently serving on the Low Voltage Technical Committee of the ISPSD and the program committee of the Power Supply on Chip Workshop.