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IEEE Electron Devices Society

Tao Yu

   taoyu

Tao Yu received the B.S degree from Peking University, Beijing, China, in 2011. He is currently working toward the M.S. degree in Massachusetts Institute of Technology, Cambridge, MA.

Since 2011, he has been working on III-V heterostructure based steep-subthreshold-slope devices in the Microsystems Technology Laboratories of MIT. He has authored and co-authored over 10 papers in IEDM, IEEE Transactions on Electron Devices, and etc. His research interests also include nanoscale MOS device structure design and fabrication.

Mr. Yu is the recipient of the 2009 National Scholarship by the Ministry of Education, China.

Tao Yu received the B.S degree from Peking University, Beijing, China, in 2011. He is currently working toward the M.S. degree in Massachusetts Institute of Technology, Cambridge, MA.

Since 2011, he has been working on III-V heterostructure based steep-subthreshold-slope devices in the Microsystems Technology Laboratories of MIT. He has authored and co-authored over 10 papers in IEDM, IEEE Transactions on Electron Devices, and etc. His research interests also include nanoscale MOS device structure design and fabrication.

Mr. Yu is the recipient of the 2009 National Scholarship by the Ministry of Education, China.