EDS Newsletter Editorial Staff

D.Tomaszewski (M’2014) received M.Sc degree in electronics (spec. electronic technology) from Warsaw University of Technology in 1980, and Ph.D degree in electrical engineering (spec. solid-state device electronics) from Instytut Technologii Elektronowej, Warsaw in 1998.

Peyman Servati (Ph.D., P.Eng.) is an Assistant Professor with the Department of Electrical and Computer Engineering at the University of British Columbia (UBC), Vancouver, Canada, where he leads Flexible Electronics and Energy Laboratory (FEEL) (http://feel.ece.ubc.ca/) and a is member of Clean Energy Research Centre (CERC). His research interest lies in scalable synthesis and characterization of nanowires and nanostructures, fabrication of flexible electronics and transistors, and development of low-cost photovoltaic devices. Before joining UBC in 2006, he was a research associate at the Centre for Advanced Photonics and Electronics (CAPE) of the University of Cambridge, UK, working on nanowires and printable nanocomposite materials. From 2004 to 2005, he was a senior research scientist with Ignis Innovation Inc., a spin-off company of the University of Waterloo, Ontario, Canada, working on novel organic light-emitting diode (OLED) displays. Dr. Servati has more than eighty papers in peer-reviewed journals and conferences, has four patents, and has co-authored three book chapters. His doctoral thesis on mechanically flexible and plastic electronics won the 2005 Doctoral Prize from the Natural Sciences and Engineering Research Council (NSERC) of Canada. He is the winner of 2006 Canada-UK Millennium Research Award and Bronze Medal in the XXV International Physics Olympiad, China, 1994.

Fabrizio Bonani received the Master (summa cum laude) and PhD degrees from Politecnico di Torino, Italy, in 1992 and 1995, respectively. Currently, he is Full Professor of Electronics at the Department of Electronics and Telecommunications of Politecnico di Torino. His research interests are mainly devoted to the physics-based and compact modeling of semiconductor devices for microwave and power applications, with an emphasis on noise and variability simulations, to exploring non-conventional computation paradigms, to the thermal analysis of power circuits and devices, and to the analysis and simulation of nonlinear circuits and dynamical systems. He published more than 200 papers in international journals and peer reviewed international conferences, and he co-authored two books. He served in the Modeling and Simulation committee for the IEEE International Electron Device Meeting (IEDM) for the 2010-2011 term. From 2013 he is a member of the Technical Program Review Committee for the IEEE International Microwave Symposium (IMS). He served as an Associate Editor for the IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems from 2016 to 2022, and, since 2022, he is a member of the Editorial Board of Memories - Materials, Devices, Circuits and Systems.

Lecture Titles:

Devices for Neuromorphic Computing and Artificial Intelligence

Bio:

Dr. Hou received his Ph.D. degree from Cornell University in 2008. From 2000 to 2004, he was with the Taiwan Semiconductor Manufacturing Company (TSMC). In 2008, he joined National Yang Ming Chiao Tung University (NYCU), where he is currently a Chair Professor. In 2022, Dr. Hou became the Director General of Taiwan Semiconductor Research Institute (TSRI), one of the National Applied Research Laboratories in Taiwan focusing on semiconductor technology. He was the Associate Vice President for R&D at NYCU and the R&D Director of the Industrial Technology Research Institute (ITRI). He served on the technical program committees of major conferences, including VLSI, IEDM, IRPS, DRC, EDTM, ISCAS, VLSI-TSA, etc. He is currently the Regional Editor of IEEE EDS Newsletter. He is also a Member of the Board of Directors of the IEEE Taipei Section and Advisor of the IEEE EDS NCTU student branch chapter.

Lecture Topics: Process Variability and Variability Resistant Device Design, Low Power VLSI Design, Temperature Analysis of Advanced MOS Transistor.

Biography: Soumya Pandit received Ph.D. from Indian Institute of Technology, Kharagpur, India in the year 2009 and Master degree in Radio Physics and Electronics in the year 2000. Currently he is associated with the Institute of Radio Physics and Electronics, University of Calcutta as Assistant Professor. The research interest of Dr. Pandit includes device design and optimization for System-on-Chip Applications. Dr. Pandit was the Chair of ED Calcutta Chapter for the year 2014, 2015 and is the founder chapter advisor to ED University of Calcutta Student Branch Chapter.