Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of T-DMR. Click an article title to view within IEEE Xplore.
View / Subscribe to the T-DMR RSS Feed
- Table of contents
- IEEE Transactions on Device and MaterialsReliability publication information
- Editorial Kudos to Our Reviewers
- Dynamic Voltage Overshoot During Triggering of an SCR-Type ESD Protection
- Stress Current Slew Rate Sensitivity of an Ultra-High-Speed Interface IC
- Modeling Tool for Capacitive RF MEMS Operating Bias Voltage Optimization
- Investigation of Hot-Carrier Degradation in 0.18-
$mu$ - Evaluation of Three-Point Bending Strength of Thin Silicon Die With a Consideration of Geometric Nonlinearity
- Life Model of the Electrochemical Migration Failure of Printed Circuit Boards Under NaCl Solution
- Impacts of Process and Temperature Variations on the Crosstalk Effects in Sub-10 nm Multilayer Graphene Nanoribbon Interconnects
- Modeling Copper Plastic Deformation and Liner Viscoelastic Flow Effects on Performance and Reliability in Through Silicon Via (TSV) Fabrication Processes
- The Estimation of the Lifetime Variation for Power Devices
- Efficient Output Power Enhancement and Protection Technique for Hot Spotted Solar Photovoltaic Modules
- Photovoltaic Hot-Spots Fault Detection Algorithm Using Fuzzy Systems
- Rule-Based Design for Multiple Nodes Upset Tolerant Latch Architecture
- Reliability Characterization and Modeling of High Speed Ge Photodetectors
- Analysis of 80-MeV Carbon and 80-MeV Nitrogen Ion Irradiation Effects on N-Channel MOSFETs
- Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using IV Pulsed Characterizations and Infra Red Microscopy
- A Parasitics-Induced Failure Mechanism for Transistors in the Bit-Line Sense Amplifier Region of DDP DDR3 DRAM During a CDM Event
- Investigation of Electrical Characteristics Dependency of Roll-to-Roll Printed Solar Cells With Silver Electrodes on Mechanical Tensile Strain
- Temporally- and Spatially-Resolved Observations of Current Filament Dynamics in Insulated Gate Bipolar Transistor Chip During Avalanche Breakdown
- Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
- Comparative Study on the Transients Induced by Single Event Effect and Space Electrostatic Discharge
- Impact of Time Zero Variability and BTI Reliability on SiNW FET-Based Circuits
- Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation
- Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs
- Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions
- Au/Al Wire Bond Interface Resistance Degradation Rate Simulations
- ESD Protection Design for Open-Drain Power Amplifier in CMOS Technology
- Surface Density Gradient Engineering Precedes Enhanced Diffusion; Drives CMOS In-Line Process Flow Compatible CuCu Thermocompression Bonding at 75 C
- Corrections to Material Characterization and Warpage Modeling for Power Devices Active Metal Brazed Substrates
- IEEE Transactions on Device and Materials Reliabilityinformation for authors
- [Blank page]
