Lastest Issue: Table of Contents (TOC)
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- Table of contents
- IEEE Transactions on Device and MaterialsReliability publication information
- Editorial
- Editorial From Edmundo A. Gutirrez-D
- Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence
- Unveiling the Failure Mechanism of Electrical Interconnection in Thermal-Aged PV Modules
- Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA
- Characterization and Image-Based Performance Evaluation on the Longevity of LCDs Under High Temperature and Humid Environment
- Warpage Analysis of Fan-Out Panel-Level Packaging Using Equivalent CTE
- A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell Design
- Warpage Modeling of Ultra-Thin Packages Based on Chemical Shrinkage and Cure-Dependent Viscoelasticity of Molded Underfill
- Electromigration Effects in Power Grids Characterized From a 65 nm Test Chip
- Honeycomb Texturing of Hierarchical Nanoflowers of WO3 as an Efficient Route to Improve Repeatability and Stability of Room Temperature Vapor Sensor
- An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method
- Using Confocal Microscopy and Digital Image Correlation to Measure Local Strains Around a Chip Corner and a Crack Front
- An Extended Building-In Reliability Methodology on Evaluating SRAM Reliability by Wafer-Level Reliability Systems
- Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs
- Detection of ESD-Induced Soft Failures by Analyzing Linux Kernel Function Calls
- Die Shift Assessment of Reconstituted Wafer for Fan-Out Wafer-Level Packaging
- Effect of Ion Implant Modification on Electrical Properties of MTM Antifuse a-Si Films
- Reliability Testing of 3D-Printed Polyamide Actuators
- Impact of the Formation of Intermetallic Compounds in Current-Carrying Connections
- Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress
- Reconstituted Wafer Deformation Analysis Through Whole Process Emulation
- Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications
- A Novel Hot Spot Mitigation Circuit for Improved Reliability of PV Module
- Micro-Compression of Freestanding Electroplated Copper Through-Glass Vias
- Modeling of NBTS Effects in P-Channel Power VDMOSFETs
- Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition
- Correlation Study of Bulk Si Stress and Lithography Defects Using Polarized Stress Imager
- Introducing IEEE Collabratec
- IEEE Transactions on Device and Materials Reliabilityinformation for authors
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