Lastest Issue: Table of Contents (TOC)
Below is the complete Table of Contents for the current edition of T-DMR. Click an article title to view within IEEE Xplore.
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- Table of contents
- IEEE Transactions on Device and MaterialsReliability publication information
- Editorial for New TDMR Editor Byoung Woon Min
- Editorial for TDMR Editor Oscar Huerta
- Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM
- Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs
- Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
- Oxide Edge Trap Density Extraction in Silicon Nanowire MOSFET From Tunnel Current Noise Measurement in Gated Diode Like Arrangement
- Applying a Statistical Model to the Observed Texture Evolution of Fatigued Metal Films
- Effect of Different PBO-Based RDL Structures on Chip-Package Interaction Reliability of Wafer Level Package
- A VDD Correction Method for Static Stability Test of SRAM Bit Cell
- A Study of the Relationship Between Endurance and Retention Reliability for a HfO-Based Resistive Switching Memory
- Temperature Dependent Reliability of Polysilicon Emitter Bipolar Transistors Under High Current Stress
- Effect of Device Dimensions, Layout and Pre-Gate Carbon Implant on Hot Carrier Induced Degradation in HKMG nMOS Transistors
- Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress
- NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications
- Investigation of Chip Temperature on Response Characteristics of the Humidity Sensor From ppm to RH
- Reliability-Oriented Automated Design of Double-Sided Cooling Power Module: A Thermo-Mechanical-Coordinated and Multi-Objective-Oriented Optimization Methodology
- Reliability of NAND Flash Memory as a Weight Storage Device of Artificial Neural Network
- Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET
- In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides
- Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs
- Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC
- Introducing IEEE Collabratec
- IEEE Transactions on Device and Materials Reliability information for authors
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