Lastest Issue: Table of Contents (TOC)
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- Table of contents
- IEEE Transactions on Device and MaterialsReliability publication information
- Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips
- Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment
- Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs
- LED Lifetime Prediction Under Thermal-Electrical Stress
- Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
- Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory
- Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs
- LED Reliability Assessment Using a Novel Monte Carlo-Based Algorithm
- Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs
- Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate
- Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers
- Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes
- Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study
- BTI-Aware Timing Reliability Improvement of Pulsed Flip-Flops in Nano-Scale CMOS Technology
- The Novel Structure to Enhancement
Ion /Ioff Ratio Based on Field Effect Diode - Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs
- Mitigation Technique for Single Event Transient via Pulse Quenching
- TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT
- Developing Cost-Effective Ultrathin Reliable High Power White LED Emitters
- Reliability Characterization of a Low-
k Dielectric Using Magnetoresistance as a Diagnostic Tool - CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations
- Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits
- Solid-State Image Sensors
- IEEE Transactions on Device and Materials Reliabilityinformation for authors
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