Lastest Issue: Table of Contents (TOC)
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- Table of contents
- IEEE Transactions on Device and MaterialsReliability publication information
- Editorial Kudos to Our Reviewers
- Editorial for December 2020
- Simultaneous and Sequential Triggering in Multi-Finger Floating-Base SCRs Depending on TLP Pulse Rise Time
- Low-Leakage and Variable V
HOLD Power Clamp for Wide Stress Time Range From ESD to Surge Test - Transient Overshoot Voltages During VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions
- The Influence of N-Type Buried Layer on SCR ESD Protection Devices
- Hybrid Multi-Graphene/Si Avalanche Transit Time h-ATT Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies
- Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in pMOSFETs
- Short Circuit Detection and Fault Current Limiting Method for IGBTs
- On-Chip Adaptive VDD Scaled Architecture of Reliable SRAM Cell With Improved Soft Error Tolerance
- Effect of Crack Evolution on the Resistance and Current Density of the Al Metallization in the IGBT Module During Power Cycling
- A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application
- A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits
- Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments
- Electron Beam Induced Degradation in Electrical Characteristics of Optocoupler
- Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices
- Integer Codes Correcting Single Errors and Detecting Burst Errors Within a Byte
- Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments
- Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs
- Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs
- Various Reliability Investigations of Low Temperature Polycrystalline Silicon Tunnel Field-Effect Thin-Film Transistor
- Low Temperature Processing of Electronic Materials for Cuttung Edge Devices
- Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on New simulation methodologies for next-generation TCAD tools
- 2020 Index IEEE Transactions on Device and Materials Reliability Vol. 20
- IEEE Transactions on Device and Materials Reliabilityinformation for authors
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