Lastest Issue: Table of Contents (TOC)
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- Table of Contents
- IEEE Transactions on Device and Materials Reliability Publication Information
- 4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability
- Nondestructive and Quantitative Evaluation of a GaAs Epitaxial Layer Covered With a Silicon Nitride Insulating Thin Film After a Highly Accelerated Temperature and Humidity Stress With the Use of Photoreflectance Spectroscopy
- Strain Modulated Asymmetrical Si/SiGe Superlattice p-i-n Switches for MMW Low-Loss Secure Communication Systems
- Combined Effects of Polluted Particles and Environmental Factors on Electrochemical Migration Failure
- High Precision IGBT Health Evaluation Method: Extreme Learning Machine Optimized by Improved Krill Herd Algorithm
- Total Ionizing Dose (TID) Impact on Basic Amplifier Stages
- Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective
- Mono-Energetic Proton Induced Damages in SiC Power MOSFETs
- Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements
- Micromechanical Adhesion Experiments and Simulation on Cu-Damascene Processed Test Devices
- Effect of Capped Cu Layer on Protrusion Behaviors of Through Silicon via Copper (TSV-Cu) Under Double Annealing Conditions: Comparative Study
- Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation
- White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses
- Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators
- Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement
- Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions
- Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling
- Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory
- Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
- Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response
- Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"
- Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design
- TechRxiv: Share Your Preprint Research with the World!
- IEEE Transactions on Device and Materials Reliability Information for Authors
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