Editor-in-Chief and Editors
Jesus del Alamo - Editor-in-Chief
Jesus A. del Alamo is the Director of the Microsystems Technology Laboratories at Massachusetts Institute of Technology. He obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid and MS and PhD degrees in Electrical Engineering from Stanford University. From 1985 to 1988 he was with Nippon Telegraph and Telephone LSI Laboratories in Japan and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is the Donner Professor. His current research interests are centered on nanoelectronics based on compound semiconductors. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society. He is the recipient of the Intel Outstanding Researcher Award in Emerging Research Devices, the SRC Technical Excellence Award, and the IEEE Electron Devices Society Education Award. He served as editor of IEEE Electron Device Letters for 9 years.
Albert Chin - Thin Film Transistors
Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982. He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore. He is a pioneer on low DC-power high-κ CMOS, high-κ Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-κ CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS www.itrs.net Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
- Device-Circuit Co-design for RF & AI Memory
- Monolithic Three-Dimensional IC Devices for Brain-Mimicking IC Hardware
- Ultra-low power & energy-efficient green electronic devices
Brian Doyle - Emerging Technologies and Devices; Memory Devices and Technology
Takashi Egawa - Compound Semiconductor Devices
Research Center for Nano-device and System
Udayan Ganguly - Memory Devices and Technology; Silicon and Column IV Semiconductor Devices; Emerging Technologies and Devices
Udayan Ganguly received the B.Tech. degree in Metallurgical Engineering from the Indian Institute of Technology (IIT) Madras, in 2000 and the M.S. and Ph.D. degrees in Materials Science and Engineering from Cornell University, Ithaca, NY, in 2005 and 2006, respectively. In 2006, Udayan joined Applied Materials as technical lead for Flash Memory Applications Development at Applied Materials’ Front End Product Division, Sunnyvale, CA. He then joined Dept. of Electrical Engineering at IIT Bombay in 2010. He has authored/ co-authored 50+ journal, 90+ conference papers and 25+ patents (applied/granted). His research interests are in semiconductor device physics and processing technologies for advanced memory, computing, and neuromorphic systems. He likes to experiment with teaching/learning methods like . He has contributed to the for India. He works to augment national semiconductor manufacturing capability at Semi-Conductor Labs, Chandigarh, for which he has won the Dr. PK Patwardhan Technology Development Award 2018.
Harald Gossner - Solid-State Power and High Voltage Devices
Harald Gossner (M ‘07, SM ‘11) is Senior Principal Engineer at Intel. He received his degree in physics (Dipl. Phys.) from the Ludwig-Maximilians-University, Munich in 1990 and his Ph. D. in electrical engineering from the Universität der Bundeswehr, Munich in 1995. For 15 years he worked on the development of ESD protection concepts with Siemens and Infineon Technologies, heading the ESD development team of Infineon Technologies. In 2010 he has joined Intel overseeing the development of robust mobile systems.
Harald Gossner has authored and co-authored more than 130 technical papers and two books in the field of ESD and device physics. He holds 60 patents on the same topic. He received several best paper awards of EOSESD Symposium and has been the recipient of the 2015 Outstanding Contribution Award of ESD association. He is lecturer of tutorials at ESREF, IRPS and EOSESD symposium and has served in technical program committees of IEDM, EOSESD Symposium and International ESD Workshop. In 2006 he became cofounder and co-chair of the Industry Council on ESD Target Levels. Since 2012 he is also member of the board of directors of ESD Association and currently holds the position of a vice president of the organization.
Bogdan Govoreanu - Memory Devices and Technology
Bogdan Govoreanu (SM’11, M’04) received his Dipl.-Eng. and M.Sc. degrees in Electronics from the Polytechnic University of Bucharest, Romania, in 1995 and 1996, respectively and his Ph.D. degree in Applied Sciences from the University of Leuven (KU Leuven), Belgium, in 2004, for his research work on tunnel barrier engineering for nonvolatile memory. He joined imec Leuven in 2004, where he is presently a Principal Scientist. His research focus is on advanced and emerging memory devices, materials and technologies. His recent research interests extend to various neuromorphic computing areas, including components, machine learning algorithms and systems. Dr. Govoreanu has authored or co-authored over 130 papers in peer-reviewed journals and conference proceedings and holds over 10 US and European patents. He has served in the IEDM Technical Program Committee (2012-2013) and, since 2014, in the ESSDERC Technical Program Committee.
Edmundo A. Gutierrez-D. - Solid State Device Phenomena; Emerging Technologies and Devices
Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
Daewon Ha - Silicon and Column IV Semiconductor Devices; Memory Devices and Technology
Daewon Ha received the B.S. and M.S. degrees in electrical engineering from Yonsei University, Seoul, Korea, in 1993 and 1995, respectively, and the Ph.D. degree in electrical engineering and computer science from University of California, Berkeley, USA in 2004. In 1995, he joined Samsung Electronics, Co., Ltd., Korea where he was involved in the development of world-first fully working 1 Gb and 512 Mb dynamic random access memory (DRAM) as a process integration engineer. From 2000 to 2004, he conducted research in the field of nano-scale CMOS devices using advanced transistor structures and materials such as ultra-thin silicon body single- and double-gated MOSFET (UTBFET and FinFET). In 2004, he re-joined Samsung Electronics, Co., Ltd., and has been involved in the development of 1 Gb DRAM using 68 nm technology and 64 Mb, 512 Mb, 1 Gb, and 8 Gb phase change random access memory (PRAM). He has published more than 50 technical papers and holds more than 30 issued and pending patents on memory technology. His current research interests are nano-scale CMOS devices, emerging memory technologies and reliability such as phase-change memory and resistive memory, and so on. Dr. Ha was a recipient of Best Paper Award from European Solid-State Device Research Conference (ESSDERC) in 1999, and Samsung Best Paper Award (Gold Prize) in 2005. He served as a sub-committee member of the International Electron Devices Meeting (IEDM) from 2010 to 2011, and the International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) from 2008 to 2010.
Steve Hall - Silicon and Column IV Semiconductor Devices; Thin Film Transistors
Professor Steve Hall has interests spanning materials characterisation, device physics & innovative device design and gate level circuits. He has about 250 conference and journal papers in these areas including novel measurements and contributions to the understanding of MOS related interfaces and materials quality. He successfully designed and built novel MOS and bipolar devices in silicon for about 20 years. More recently, his work encompasses high permittivity dielectrics, conducting oxides, rectennas for energy scavenging and biologically inspired device/circuit concepts. He was Technical Programme Chair of ESSDERC 2008, guest editor of selected papers in Solid-State Electronics and currently sits on the Steering Committee of ESSDERC/ESSCIRC. He serves on the programme committees of ESSDERC and INFOS, for which he was vice-Chair in 2009 and is a member of the Steering Committee from 2009. He was co-organiser of a NATO Advanced Workshop in 2007 and co-editor of proceedings. He was active in the EU Networks of Excellence FP6 SINANO, FP7 NANOSIL and managed WP4 in the EU FP5 project SIGMOS. He participated in the major FP6 Integrated Project PULLNANO and is a founder member of the European SINANO Institute, where he chairs the General Assembly. He serves on the Editorial Advisory Board of Solid-State Electronics. He is a Fellow of the IET, a Chartered Engineer and a Senior Member of IEEE. He was Head of his University Department from 2001 to 2009 and is currently the Director of Research.
Genquan Han - Silicon and Column IV Semiconductor Devices, Emerging Technologies and Devices
Genquan Han received B.S. degree in material science and engineering from Tsinghua University, Beijing, in 2003, and Ph.D. degree in microelectronic and solid-State electronics from Institute of Semiconductors, Chinese Academy of Sciences in 2008. From 2008 to 2013, he was a Research Fellow with Silicon Nano Device Laboratory (SNDL), National University of Singapore. His research focused on design and fabrication of tunneling transistors and high mobility channel MOSFETs. In 2013, he joined the college of optoelectronic engineering, Chongqing University. Since May 2015, he joined the school of microelectronics, Xidian University, as a Professor. His current research interests include high mobility channel transistors, steep slope devices, such as negative capacitance FETs, Ga2O3 wide bandgap devices, and group-IV photonics.
Ray-Hua Horng received the B.S. degree in electrical engineering from National Cheng Kung University, Tainan, Taiwan, in 1987, and the Ph.D. degree in electrical engineering from National Sun Yat Sen University, Kaohsiung, Taiwan, in 1993.
Prof. Horng is a scientist active in the field of green photonics devices. She has introduced outstanding innovations to the process of fabrication of high-performance LEDs and solar cells based on III-V quaternary semiconductors materials, III-V nitrides, and wide-bandgap oxide materials covering all aspects of development, from material growth and characterization to device design and fabrication, up to the stage of patent coverage and technology transfer. Prof. Horng has a very strong relationship with industry with extensive experience in technology transfer.
Prof. Horng has a remarkable record of publications: over 330 papers on SCI Journals and 500 papers in Conference Proceedings, with an h index of 32 and 3969 citations of her published papers, and a rich portfolio of patents, about 155 (25 US and 130 domestic) of which 40 have been licensed to companies.
Dr. Horng received numerous awards recognizing her work on high-brightness LEDs. She has awards from the Ministry of Education of Taiwan for Industry/ University Corporation Project in 200 and from the Ministry of Science & Technology of Taiwan for excellent technology transfer of high-power LEDs in 2006, 2008, 2009, 2010 and 2011. In 2008, Chi Mei Optoelectronics honored her with the first prize Chi Mei Award. In 2007, she received the IEEE Region 10 Academia-Industry Partnership Award and in 2013, she was selected for the distinguished research award by the National Science Council of Taiwan. She became Fellow of the Australian Institute of Energy in 2012, Fellow of the Institution of Engineering and Technology in 2013, Fellow of SPIE in 2014, Fellow of IEEE in 2015 and Fellow of OSA in 2016.
Prof. Horng has devoted special attention to device technology as well as to issues of interfacing with system applications, thus achieving a number of contributions ranging from materials to processes, to thermal design and contact issues, to optics, and to packaging. The research activities of Prof. Horng have focused on material growth by MOCVD of III-V quaternary semiconductors, III-V nitride compounds, wide bandgap oxide materials and device fabrication of LEDs and semiconductor devices (containing HEMTs, deep-UV photodiodes, deep-UV phototransistor and gas sensors), and nano-technology fabrication processes for LEDs and high-efficiency solar cells. A special achievement of Prof. Horng has been smart-cut technology and epilayer transfer for LEDs and solar cells, with re-use of the substrate. This technology has been developed in her laboratory and is described in several widely cited Journal papers, as well as covered by international patents. Many patents have been transferred to manufacturing Companies in Taiwan, boosting them to the top international market positions.
Gregg Jessen - Compound Semiconductor Devices, Emerging Technologies and Devices
Gregg Jessen received his Ph.D. and M.S. degrees in Electrical Engineering from The Ohio State University in 2002 and 1998 respectively and his B.S. in Engineering Physics from Wright State University in 1997. He is currently a Principal Electronics Engineer at the Air Force Research Laboratory in the Sensors Directorate. His main area of focus is physical electronics and electronic materials for transistor applications. He also develops monolithic microwave integrated circuit (MMIC) technologies as a means to demonstrate the impact of novel device developments in a relevant circuit environment for sensors applications. His current research efforts are in RF and power transistors in GaN and Ga2O3 as well as metal-oxide thin-film transistors for monolithic integration applications. Dr. Jessen’s efforts span basic research, program management, and application development where he facilitates interaction between academic, government, and industrial partners to develop next generation microelectronics. For his technical efforts, he has been awarded the IEEE Harrell V. Noble Award in 2018, the AFRL Sensors Directorate Director’s Cup in 2017 and 2013, and the AFRL Brian Hendrickson Award for technical excellence in 2017 and 2015. For his programmatic efforts, he received the Exemplary Civilian Service Award in 2011. Dr. Jessen has authored or co-authored 70 journal articles and conference proceedings and is a Senior Member of IEEE.
Steven J. Koester - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
Kelin J. Kuhn - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
Kelin J. Kuhn (M’78–SM’04-F’11) received the B.S. degree in electrical engineering from the University of Washington, Seattle, in 1980 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Palo Alto, CA, in 1985. Prior to 1997 she was a tenured Associate Professor with the Department of Electrical and Computer Engineering, University of Washington. In 1997, she joined Intel Corporation, Hillsboro, OR, working on the Intel 0.35-μm process technology and was involved in Intel manufacturing process technology development for the 0.35-μm, 130-nm, 90-nm, 45-nm, 22-nm, 14-nm, and 7nm technology nodes. She retired from Intel in 2014 with the title of Intel Fellow and Director of Advanced Device Technology in the Components Research Group of Intel Corporation. She is presently the Mary Shepard B. Upson Visiting Professor in the Department of Materials Science and Engineering at Cornell University. She is the author of more than 100 technical papers in electronics and photonics, as well as the author of the textbook Laser Engineering (Prentice-Hall, 1997) and an editor (in partnership with Prof. T.J.K. Liu) of the book CMOS and Beyond: Logic Switches for Terascale Integrated Circuits (Cambridge, 2015). Dr. Kuhn is an IEEE Fellow, recipient of the IEEE Frederik Philips Award (2016), the IEEE Paul Rappaport Award (2013), and two Intel Achievement Awards (Intel’s highest technical award) one 2006 (for HiK-MG) and one in 2008 (for key contributions to Intel’s 22nm TriGate technology). She is also a past recipient of the NSF Presidential Young Investigator award (1991-7).
Duygu Kuzum - Memory Devices and Technology; Sensors and Actuators
Biography: Duygu Kuzum received her Ph.D in Electrical Engineering from Stanford University in 2010. She is currently an Assistant Professor in Electrical and Computer Engineering Department at University of California, San Diego. Her research focuses on applying innovations in nanoelectronics to develop new sensor technologies, which will help to better understand circuit-level computation in the brain. She develops nanoelectronic synaptic devices for energy-efficient neuro-inspired computing. She is the author or coauthor of over 50 journal and conference papers. She was a recipient of a number of awards, including Texas Instruments Fellowship and Intel Foundation Fellowship, Penn Neuroscience Pilot Innovative Research Award (2014), Innovators under 35 (TR35) by MIT Technology Review (2014), ONR Young Investigator Award (2016), IEEE Nanotechnology Council Young Investigator Award (2017), NIH NIBIB Trailblazer Award (2018) and NSF Career Award (2018).
Zhenqiang (Jack) Ma - Compound Semiconductor Devices; Solid State Device Phenomena
Zhenqiang (Jack) Ma received his B.S. degree in applied physics and B.E. degree in electrical engineering from Tsinghua University in Beijing, China in 1991. He received his M.S. degree in nuclear science and M.S.E. degree in electrical engineering from the University of Michigan, Ann Arbor in 1997, and the Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor in 2001. From 2001-2002, he was a member of the R&D team at Conexant Systems and later its spin-off, Jazz Semiconductor (now TowerJazz), in Newport Beach, CA. In 2002, he left Jazz to join the faculty of University of Wisconsin–Madison as an assistant professor in the Department of Electrical and Computer Engineering. He is now a Lynn H. Matthias Professor in Engineering and a Vilas Distinguished Achievement Professor with affiliated appointments in four other departments and research institutes in engineering and medical school. His current interdisciplinary research covers electrical engineering, materials science and engineering, and biomedical engineering. His present research focuses on the materials, physics and device applications of lattice-mismatched 3D-semiconductor heterostructures, microwave flexible electronics, semiconductor nanomembrane-based sensors, and bioelectronics. He is the author or co-author of about 500 technical papers and book chapters related to his research and holds several dozens of US, foreign and international patents. He is a fellow of AAAS, AIMBE, APS, IEEE, NAI and OSA.
B. Gunnar Malm - Solid-State Power and High Voltage Devices; Silicon and Column IV Semiconductor Devices
Bengt Gunnar Malm (M’98 - SM’10) was born in Stockholm, Sweden, in 1972. He received the M.S. degree in engineering physics and radiation science from Uppsala University, Uppsala, Sweden, in 1997. He was also an intern at ABB AB, Sweden, in 1996. In 1997 he joined the Royal Institute of Technology (KTH) Stockholm, where his thesis work focused on high-speed silicon-germanium (SiGe) transistors. He received the Ph.D. degree in solid-state electronics in 2002. In 2011 he received the Docent degree also from KTH. Currently, he is an Associate Professor in integrated devices and circuits, and serves as director of undergraduate studies at the Department of Electronics, KTH. His research interests include semiconductor and spintronic device physics, characterization with emphasis on noise, fluctuations and variability, and also TCAD modeling. His recent work includes silicon-carbide (SiC) integrated circuits for extreme environments and phase noise in microwave spintronic oscillators. He has been the main advisor for 2 PhD students and has published or co-authored more than 90 scientific papers in international journals and conferences. He has coauthored 2 book chapters, a number of invited conference papers and tutorials, and has one granted US patent. Dr. Malm is a member of the ESSDERC TPC and co-chair for 2011 event in Helsinki. He was an organizer of ISTDM 2010 and ULIS 2014, and the 2012 general chair for the biannual GigaHertz Symposium and Swedish Radio and Microwave Days. He has an active interest in sustainability issues and served on the KTH Sustainability Council (KTH-S) 2011-2015.
Omar Manasreh - Optoelectronics, Display, Imaging
Prof. Omar Manasreh received his B. Sc. degree from the University of Jordan in 1976, M. Sc. degree from the University of Puerto Rico, Rio Pierdras, Puerto Rico in 1980, and his Ph. D. degree from the University of Arkansas, Fayetteville, in 1985. He joined the US Air Force as an Electronic Engineer between 1987-1999, where he worked on several projects related to electronic and optoelectronic applications of III-V semiconductor materials. In late 1999 he joined the department of Electrical and Computer Engineering, University of New Mexico as a research professor, where he established two research labs that are fully funded externally with several graduate and undergraduate students being involved. He joined the department of Electrical Engineering at the University of Arkansas in June 2003 where he established a state-of-the-art optoelectronic research lab funded DoD, NASA, and NSF. Omar received several awards including the Science and Technology Achievement Awards presented by the Air Force Materiel Command at Wright-Patterson Air Force Base and Aubrey E. Harvey Award (Sigma Xi) presented by the University of Arkansas. He was a National Research Council Fellow during 1988-89. He has published over 190 technical papers published in preeminent applied physics and device technical journals including Electron device Letters, presented over 80 papers at national and international meetings and over 60 invited talks. He organized and edited several symposia and proceedings for the Materials Research Society, Electrochemical Society, and European Materials Research Society. He was the editor-in-chief for the following book series: 1) “Optoelectronic Properties of Semiconductors and Superlattices” published by Taylor and Francis with 21 volumes. 2) “Semiconductor Materials and Devices” published by Artech House with seven volumes. 3) “Nanoscience and Technology” published by McGraw-Hill with 6 volumes. He authored the following textbooks: 1) "Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors" (Artech House, Boston, MA, 1993). 2) “Semiconductor heterojunctions and nanostructures” (MicGraw-Hill, NY 2005). 3) “Introduction to nanomaterials and devices” (Wiley, NY, 2012). Omar is a senior member of IEEE, a member of the American Physical Society and the Materials Research Society. His current research is focused on the experimental and theoretical optoelectronic properties of III-V semiconductors, nanomaterials, and related devices including: 1) Multi-color photodetectors based on III-V semiconductor nanomaterial systems. 2) Colloidal growth of semiconductor nanocrystals and metallic nanoparticles, which are being investigated for their optoelectronic applications. 3) Photovoltaic devices based on nanomaterials including coupled nanocrystals/nanotubes. 4) Nanoscale semiconductor materials for optoelectronic components including emitters. 5) Plasmonic effect on the device performance. 6) Radiation effect on semiconductor materials and devices. His optoelectronic research lab is equipped with various spectrometers covering the spectral range from 0.18 – 1000 mm, which are configured to performed various optical measurements, such as absorption, transmission, Raman scattering, photoluminescence, quantum efficiencies, energy conversion efficiencies, and photoconductivity. The lab houses a class 100 clean room with various wet and dry etching (ICP-RIE) equipment capable of fabricating devices with dimensions on the order of sub-micron. His recent teaching includes Electronics I, Semiconductor Nanostructures I and II and Introduction to nanomaterials and devices.
Hidenori Mimura - Vacuum Electron Devices
Research Institute of Electronics
Victor Moroz - Silicon and Column IV Semiconductor Devices; Solid-State Device Phenomena
Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys. Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping. Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents. He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.
Chandra Mouli - Memory Devices and Technology; Solid State Device Phenomena
Azad Naeemi - Emerging Technologies and Devices; Materials, Processing, and Packaging
Azad Naeemi (S’99-M’04-SM’04) received the B.S. degree in electrical engineering from Sharif University, Tehran, Iran, in 1994, and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology (Georgia Tech), Atlanta, in 2001 and 2003, respectively. He worked as a research engineer with the Microelectronics Research Center, Georgia Tech, from 2003 to 2008. In 2008, he joined the School of Electrical and Computer Engineering faculty at Georgia Tech, where he is currently an associate professor. His research crosses the boundaries of materials, devices, circuits and systems, investigating integrated circuits based on conventional and emerging nanoelectronic and spintronic devices and interconnects. As silicon field-effect transistors and copper/low k interconnects approach their scaling limits, this research aims at finding evolutionary and revolutionary approaches to sustain the growth of the computing power of microchips. Dr. Naeemi serves as the leader of the beyond-CMOS benchmarking research at the Semiconductor Research Corporation (SRC) Nanoelectronics Research Initiative (NRI) and the Semiconductor Technology Advanced Research Network (STARnet). Dr. Naeemi is the recipient of the IEEE Electron Devices Society (EDS) Paul Rappaport Award for the best paper that has appeared in IEEE Transactions on Electron Devices during 2007. He has also received an NSF CAREER Award, an SRC Inventor Recognition Award, and several best paper awards at international conferences. Dr. Naeemi is a recipient of Richard M. Bass/Eta Kappa Nu Outstanding Teacher Award determined by the vote of the Georgia Tech ECE senior class.
Lis K. Nanver - Silicon and Column IV Semiconductor Devices; Materials, Processing and Packaging
Lis K. Nanver (M’80) received a masters degree in physics from the University of Aarhus, Denmark, in 1979, and a docteur ingenieur degree in physics applied to telecommunications from the Ecole Nationale Supérieure des Télécommunications (ENST), Paris, France, in 1982, on the subject of charge-coupled device simulations. She received a Ph.D. degree in electrical engineering from Delft University of Technology, The Netherlands, in 1987. In her doctoral work she developed a medium frequency BiFET IC-process and made it available to designer groups. In 1987 she continued her research on silicon devices and integration processes in DIMES, TU Delft, from 2001-2015 as professor heading the Silicon Device Integration Group. Mainly in cooperation with either RF/microwave or smart sensor IC designer groups she developed several new processing techniques. Her silicon-on-glass substrate-transfer process allowed true two-sided device contacting and was a basis for investigations leading to a better understanding of the electrothermal behavior of bipolar transistors. She has pioneered several ultrashallow diode technologies involving techniques such as laser annealing, Al-mediated solid-phase epitaxy and chemical-vapor deposition (CVD). The research on pure-dopant CVD processes for creating extremely shallow diodes (PureB for Si and PureGaB for Ge devices) has resulted in several leading-edge applications such as high-linearity silicon-on-glass varactor diodes, Si photodiode detectors for low penetration-depth beams and low-leakage Ge-on-Si photodiodes. Prof. Nanver is at present continuing her research as guest professor at University Twente, Enschede, The Netherlands and Aalborg University, Aalborg, Denmark. She has published more than 250 journal and conference articles, has authored two book chapters, and has been awarded 4 patents. Prof. Nanver has served on the committees of BCTM and ESSDERC. The work of her group has received prizes including the 2010 IEDM Roger Haken Award and the 2011 I2MTC Best Paper Award.
Tomas Palacios - Compound Semiconductor Devices; Emerging Technologies and Devices; Solid-State Power and High Voltage Devices
Tomás Palacios is a Professor in the Department of Electrical Engineering and Computer Science at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). His current research focuses on demonstrating new electronic devices and applications for novel semiconductor materials such as graphene and gallium nitride. His work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios has authored more than 300 contributions in international journals and conferences, 10 of which have received a best-paper award, as well as 5 book chapters and more than 30 patents. Prof. Palacios is the founder and director of the MIT MTL Center for Graphene Devices and 2D Systems, as well as the Chief Advisor and co-founder of Cambridge Electronics, Inc.
Siavash Pourkamali - Sensors and Actuators
Rudiger Quay - Compound Semiconductor Devices; Solid-State Power and High Voltage Devices
Uwe Schroeder - Memory Devices and Technology, Emerging Technologies and Devices
Debbie G. Senesky - Sensor and Actuators; Compound Semiconductor Devices
EXtreme Environment Microsystems Lab (XLab)
Debbie G. Senesky is an Assistant Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She has also held positions at GE Sensing (formerly known as NovaSensor), GE Global Research Center, and Hewlett Packard. She has served as a subcommittee member (2014, 2015) and the subcommittee chair (2016) of the Sensors, MEMS and BioMEMS (SMB) subcommittee of the IEEE International Electron Devices Meeting (IEDM). Her current research interests include the development of micro- and nano-scale sensors, wide bandgap electronics, and interface materials for operation within extreme harsh environments. She is a recipient of the NASA Early Faculty Career Award and Alfred P. Sloan Foundation Fellowship Award.
Davood Shahrjerdi - Emerging Technologies and Devices
Davood Shahrjerdi, Ph.D., is an Assistant Professor of Electrical and Computer Engineering at New York University (NYU). He received the B.S. and M.S. degrees in electrical engineering from University of Tehran, Iran, in 2002 and 2004, respectively and the Ph.D. in solid-state electronics from The University of Texas at Austin in 2008. Before joining NYU in 2014, he was a Research Staff Member at IBM T. J. Watson Research Center. His research explores the science and technology of emerging nanomaterials and devices and their interfaces with silicon CMOS. He is the recipient of IBM Research Division award (2012), IBM Outstanding Technical Achievement award (2012), and IBM Master Inventor (2013).
Massood Tabib-Azar - Emerging Technologies and Devices; Sensors and Actuators; Vacuum Electron Devices
Aaron Voon-Yew Thean - Molecular and Organic Devices; Thin Film Transistors; Emerging Technologies Devices
Electrical and Computer Engineering
Aaron Voon-Yew Thean is a Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is also a consulting Fellow to IMEC, a Nano-electronic Research Center, based in Belgium. Prior to joining NUS in 2016, Aaron served as IMEC’s Vice President of Logic Technologies and the Director of the Logic Devices Research. At IMEC, he directed the research and development of advanced device technologies ranging from ultra-scaled FinFETs, Nanowire FETs, to III-V/Ge Channels, Tunnel FETs to emerging Beyond CMOS logic nano-device architectures based on Spintronics and 2-D materials. He has been involved in Design and Process Technology Co-optimizations (DTCO) of emerging technologies targeting 7nm, 5nm, and beyond. Before 2011, he was with Qualcomm’s CDMA technologies in San Diego, California, USA. There, he led the Strategic Silicon Technologies Group responsible for new System-On-Chip technology definition for upcoming Qualcomm technologies. From 2007 to 2009, Aaron served as the International Semiconductor Development Alliance (ISDA) FEOL and Device Manager at IBM, where he co-led an eight-company alliance device/process team to develop the 28-nm and 32-nm low-power bulk CMOS technology at IBM East Fishkill, New York. His team developed the Industry’s first foundry-compatible Gate-First High-k Metal-Gate (HKMG) with novel SiGe channel Low-Power bulk CMOS technologies. It enabled some of today’s most successful smart mobile devices in production by the foundry partners. Before IBM, Aaron was a senior staff scientist with Freescale Semiconductor and Motorola’s Advanced Product Research and Development Laboratory (APRDL). He subsequently led the Novel Device Research Group there in Austin, Texas. He performed path-finding research on a variety of advanced semiconductor devices that included Strained-Si-On-Silicon, FinFETs, FDSOI, and Nano-crystal Flash Memory. Aaron graduated from the University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors & Graduated as Edmund J. James’ Scholar), M.Sc., and Ph.D. degrees in Electrical Engineering. He was awarded the 2001 Gregory Stillman Semiconductor Research Award for his Ph.D. work. He has published over 300 technical papers and holds more than 50 U.S. patents for inventions in the field of advanced electronics. Among his notable recognitions include the 2014 Compound Semiconductor Industry Innovation award for his research group’s break-though III-V FinFET work. In 2013, he was given the Best Collaboration Award from Samsung Electronics Korea for R&D collaborations contributing towards its Semiconductor R&D Center. Aaron received the 2010 Young Alumni Achievement Award from his Alma Mater, University of Illinois, for his contribution to advanced transistor R&D, as well.
Jan Vobecky - Solid-State Power and High Voltage Devices
Solid-State Power and High Voltage Devices
Jan Vobecky - Solid-State Power and High Voltage Devices Jan Vobecky (M`92 – SM`01) received the MSc. degree in Electrotechnology in 1981 and the Ph.D. in Microelectronics in 1988 from the Faculty of Electrical Engineering, Czech Technical University in Prague (CTU), Czech Republic. He started his academic career with the CTU as an Assistant Professor in 1984. He was promoted to Associate and Full Professor at the CTU in 1992 and 2000, respectively. He also received the DrSc. degree in Electronics and Vacuum technique in 1998 from the CTU. He joined ABB Switzerland Ltd. Semiconductors in Lenzburg in 2007, where he has been successively working in BiMOS, Technology, and Bipolar R&D department. He is currently the Senior Principle R&D Engineer at ABB Semiconductors in Switzerland. His current research work covers high power semiconductor device design, simulation, processing and application. In particular, his main focus is in the design and processing of high-power bipolar power devices (diodes, fast recovery diodes, phase control thyristors, gate commutated thyristors) not excluding the BiMOS and SiC technologies. He has recently developed two generations of large area thyristors for HVDC and FACTS. His research interest covers also defect engineering and carrier lifetime control in silicon and SiC. He published several hundred journal and conference papers and he holds about 35 granted patents. Jan Vobecky was the President (2002-2003) and Vice President (2004-2006) of Region 8 CS Section IEEE. From 2006 to 2010 he has been serving as the SRC Vice Chair of the IEEE EDS and from 2010 to 2017 the IEEE EDS Newsletter editor. He has been a member of Power Devices and ICs committee of the IEEE EDS from 2015 to 2018.
Yifeng Wu - Solid-State Power and High Voltage Devices; Compound Semiconductor Devices
Dr. Yifeng Wu received his B.E. degree from Tsinghua University, Beijing in 1985, his M.S. degree in Mechanical Eng. and his Ph.D. degree in Electrical Eng. from the University of California at Santa Barbara in 1994 and 1997, respectively. He served as a lead scientist in GaN microwave and millimeter-wave power devices at WideGap Technology LLC and Cree Inc. for 11 years. He joined Transphorm Inc. in 2008, leading the engineering effort in developing GaN power conversion devices and applications. Since his early research on GaN high-electron-mobility-transistors (HEMTs) as a Ph.D. project in 1995, Dr. Wu has been active at the forefront of GaN power electronics with work from basic device discovery to cutting-edge device designs, from millimeter-wave power HEMTs to kV high-efficiency power switches. He demonstrated the first GaN microwave power transistor [EDL 1996] and multiple times extended the record of the highest power density of a solid-state transistor [EDL 1998, IEDM 1999, EDL 2004, DRC 2006]. He led an engineering team at Transphorm and succeeded in developing industry’s first Jedec-qualified 600V GaN-on-Si power device products [WiPDA 2013]. His team further demonstrated true kV-class GaN transistors exceeding vertical SiC performance, reaching an operation space unprecedented for horizontal devices [TPE 2014]. Dr. Wu holds 75 US patents and has authored significant papers resulting in >6500 citations in Google Scholar. He is a senior member of the IEEE (EDS).
Shengdong Zhang received the BS degree in electrical engineering from Nanjing Institute of Technology (the predecessor of Southeast University), Nanjing, China, in 1984, the MS degree in microelectronics from Southeast University, Nanjing, China, in 1992, and the Ph.D. degree in microelectronics and solid-state electronics from Peking University, Beijing, China, in 2002.
He was a research engineer with Nanjing Institute of Electron Devices from 1984 to 1989 and from 1992-1996, and a visiting scholar at Hong Kong University of Science and Technology from 1996-1999. He joined the School of Electronics Engineering and Computer Science (EECS) of Peking University in 2002, where he has been a full professor since 2006, and the Dean of School of Electronic and Computer Engineering (ECE) at Shenzhen campus since 2016.
Throughout his career, Dr. Zhang has been involved in research on thin film transistors, display technologies, photo-sensors and integrated circuits. He has published over 150 academic papers in international journals, transactions and letters, and over 200 technical papers in international conferences. He holds more than 150 invention patents, including 26 US ones, some of which have been transferred to semiconductor and display industrial corporations in China, such as BOE, CSOT, SMIC and IVO. For his contribution to Chinese industry, Dr. Zhang has received a number of technical innovation awards from Chinese central and provincial governments.
Prof. Zhang presently serves as technical committee member of the Society of Information Display (SID), the Chinese National Technical Centre for Flat Panel Display Technology, and the Chinese National Engineering Lab of AMOLED. He is also a co-founder of Shanghai Institute of Microelectronics, Peking University, which was founded in Pudong Shanghai, in 2007.
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