Editor-in-Chief and Editors
Jesus del Alamo - Editor-in-Chief
Jesus A. del Alamo is the Director of the Microsystems Technology Laboratories at Massachusetts Institute of Technology. He obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid and MS and PhD degrees in Electrical Engineering from Stanford University. From 1985 to 1988 he was with Nippon Telegraph and Telephone LSI Laboratories in Japan and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is the Donner Professor. His current research interests are centered on nanoelectronics based on compound semiconductors. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the Institute of Electrical and Electronics Engineers and the American Physical Society. He is the recipient of the Intel Outstanding Researcher Award in Emerging Research Devices, the SRC Technical Excellence Award, and the IEEE Electron Devices Society Education Award. He served as editor of IEEE Electron Device Letters for 9 years.
Shoou-Jinn Chang - Optoelectronics; Thin Film Transistors
Zhihong Chen - Emerging Technologies and Devices
School of ECE
Albert Chin - Fellow
Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982. He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore. He is a pioneer on low DC-power high-κ CMOS, high-κ Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-κ CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS www.itrs.net Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
- Device-Circuit Co-design for RF & AI Memory
- Monolithic Three-Dimensional IC Devices for Brain-Mimicking IC Hardware
- Ultra-low power & energy-efficient green electronic devices
Brian Doyle - Emerging Technologies and Devices; Memory Devices and Technology
Harald Gossner - Senior Principal Engineer
Harald Gossner (M ‘07, SM ‘11) is Senior Principal Engineer at Intel. He received his degree in physics (Dipl. Phys.) from the Ludwig-Maximilians-University, Munich in 1990 and his Ph. D. in electrical engineering from the Universität der Bundeswehr, Munich in 1995. For 15 years he worked on the development of ESD protection concepts with Siemens and Infineon Technologies, heading the ESD development team of Infineon Technologies. In 2010 he has joined Intel overseeing the development of robust mobile systems.
Harald Gossner has authored and co-authored more than 130 technical papers and two books in the field of ESD and device physics. He holds 60 patents on the same topic. He received several best paper awards of EOSESD Symposium and has been the recipient of the 2015 Outstanding Contribution Award of ESD association. He is lecturer of tutorials at ESREF, IRPS and EOSESD symposium and has served in technical program committees of IEDM, EOSESD Symposium and International ESD Workshop. In 2006 he became cofounder and co-chair of the Industry Council on ESD Target Levels. Since 2012 he is also member of the board of directors of ESD Association and currently holds the position of a vice president of the organization.
Bogdan Govoreanu - Memory Devices and Technology
Edmundo A. Gutierrez-D. - Senior Member
Dr. Edmundo A. Gutiérrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008. Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
-Semiconductor device physics, characterization, and modeling
-Cryogenic electron devices physics, sensors, and systems
-Electro-thermal modeling and thermo-magnetics effects
-Degradation and reliability of advanced FET technologies
Daewon Ha - Silicon and Column IV Semiconductor Devices; Memory Devices and Technology
Steve Hall - Silicon and Column IV Semiconductor Devices; Thin Film Transistors
Gregg Jessen - Sensors Directorate
Steven J. Koester - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
Kelin J. Kuhn - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
Kelin J. Kuhn (M’78–SM’04-F’11) received the B.S. degree in electrical engineering from the University of Washington, Seattle, in 1980 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Palo Alto, CA, in 1985. Prior to 1997 she was a tenured Associate Professor with the Department of Electrical and Computer Engineering, University of Washington. In 1997, she joined Intel Corporation, Hillsboro, OR, working on the Intel 0.35-μm process technology and was involved in Intel manufacturing process technology development for the 0.35-μm, 130-nm, 90-nm, 45-nm, 22-nm, 14-nm, and 7nm technology nodes. She retired from Intel in 2014 with the title of Intel Fellow and Director of Advanced Device Technology in the Components Research Group of Intel Corporation. She is presently the Mary Shepard B. Upson Visiting Professor in the Department of Materials Science and Engineering at Cornell University. She is the author of more than 100 technical papers in electronics and photonics, as well as the author of the textbook Laser Engineering (Prentice-Hall, 1997) and an editor (in partnership with Prof. T.J.K. Liu) of the book CMOS and Beyond: Logic Switches for Terascale Integrated Circuits (Cambridge, 2015). Dr. Kuhn is an IEEE Fellow, recipient of the IEEE Frederik Philips Award (2016), the IEEE Paul Rappaport Award (2013), and two Intel Achievement Awards (Intel’s highest technical award) one 2006 (for HiK-MG) and one in 2008 (for key contributions to Intel’s 22nm TriGate technology). She is also a past recipient of the NSF Presidential Young Investigator award (1991-7).
Zhenqiang (Jack) Ma
Omar Manasreh - Optoelectronics, Display, Imaging
Hidenori Mimura - Vacuum Electron Devices
Research Institute of Electronics
Victor Moroz - Silicon and Column IV Semiconductor Devices; Solid-State Device Phenomena
Chandra Mouli - Memory Devices and Technology; Solid State Device Phenomena
Lis K. Nanver - Silicon and Column IV Semiconductor Devices; Materials, Processing and Packaging
Faculty of Electrical Engineering Mathematics and Computer Science
Tomas Palacios - Compound Semiconductor Devices; Emerging Technologies and Devices; Solid-State Power and High Voltage Devices
Tomás Palacios is a Professor in the Department of Electrical Engineering and Computer Science at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). His current research focuses on demonstrating new electronic devices and applications for novel semiconductor materials such as graphene and gallium nitride. His work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios has authored more than 300 contributions in international journals and conferences, 10 of which have received a best-paper award, as well as 5 book chapters and more than 30 patents. Prof. Palacios is the founder and director of the MIT MTL Center for Graphene Devices and 2D Systems, as well as the Chief Advisor and co-founder of Cambridge Electronics, Inc.
Matthias Passlack - Compound Semiconductor Devices; Emerging Technologies and Devices
Matthias Passlack received the Dipl.-Ing. (M.Sc.) and Dr.-Ing. (Ph.D.) degrees, both in Electrical Engineering, from the Technische Universität Dresden, Germany, in 1984 and 1988, respectively. In 1993, he joined AT&T Bell Laboratories in Murray Hill, New Jersey, USA, where he co-invented a ground breaking approach towards device quality oxide/GaAs interfaces. In 1995, he joined Motorola's Corporate Research Laboratories in Tempe, Arizona, USA. Dr. Passlack led R&D efforts at Motorola and Freescale Semiconductor in his capacity as a Distinguished Member of the Technical Staff in the field of III-V MOS materials, processes, characterization, devices, and physics. In 2006, these efforts culminated in the development of III-V MOSFETs performing in-line with ideal model predictions. In 2009, he joined TSMC Europe as a Deputy Director. Dr. Passlack has published two book chapters and more than 100 articles in peer refereed journals, and he holds more than 50 issued and pending US patents. Dr. Passlack is a co-recipient of the 2003 Ed Nicollian Award, he received the Motorola "Distinguished Innovator Award" in 2001, and the "Paper of the Month" award from Electronics Letters in 2007. His work was featured in "GaAsing Up Cellphones" IEEE Spectrum, May 2006, Compound Semiconductor Magazine (January 2008, May 2007), EE Times (Feb. 6, 2006) and Science Magazine (2003). Dr. Passlack is a Fellow of IEEE.
Siavash Pourkamali - Sensors and Actuators
Rüdiger Quay - Compound Semiconductor Devices; Solid-State Power and High Voltage Devices
Debbie G. Senesky - Sensor and Actuators; Compound Semiconductor Devices
EXtreme Environment Microsystems Lab (XLab)
Debbie G. Senesky is an Assistant Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She has also held positions at GE Sensing (formerly known as NovaSensor), GE Global Research Center, and Hewlett Packard. She has served as a subcommittee member (2014, 2015) and the subcommittee chair (2016) of the Sensors, MEMS and BioMEMS (SMB) subcommittee of the IEEE International Electron Devices Meeting (IEDM). Her current research interests include the development of micro- and nano-scale sensors, wide bandgap electronics, and interface materials for operation within extreme harsh environments. She is a recipient of the NASA Early Faculty Career Award and Alfred P. Sloan Foundation Fellowship Award.
Massood Tabib-Azar - Emerging Technologies and Devices; Sensors and Actuators; Vacuum Electron Devices
Aaron Voon-Yew Thean - Molecular and Organic Devices; Thin Film Transistors; Emerging Technologies Devices
Electrical and Computer Engineering
Aaron Voon-Yew Thean is a Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is also a consulting Fellow to IMEC, a Nano-electronic Research Center, based in Belgium. Prior to joining NUS in 2016, Aaron served as IMEC’s Vice President of Logic Technologies and the Director of the Logic Devices Research. At IMEC, he directed the research and development of advanced device technologies ranging from ultra-scaled FinFETs, Nanowire FETs, to III-V/Ge Channels, Tunnel FETs to emerging Beyond CMOS logic nano-device architectures based on Spintronics and 2-D materials. He has been involved in Design and Process Technology Co-optimizations (DTCO) of emerging technologies targeting 7nm, 5nm, and beyond. Before 2011, he was with Qualcomm’s CDMA technologies in San Diego, California, USA. There, he led the Strategic Silicon Technologies Group responsible for new System-On-Chip technology definition for upcoming Qualcomm technologies. From 2007 to 2009, Aaron served as the International Semiconductor Development Alliance (ISDA) FEOL and Device Manager at IBM, where he co-led an eight-company alliance device/process team to develop the 28-nm and 32-nm low-power bulk CMOS technology at IBM East Fishkill, New York. His team developed the Industry’s first foundry-compatible Gate-First High-k Metal-Gate (HKMG) with novel SiGe channel Low-Power bulk CMOS technologies. It enabled some of today’s most successful smart mobile devices in production by the foundry partners. Before IBM, Aaron was a senior staff scientist with Freescale Semiconductor and Motorola’s Advanced Product Research and Development Laboratory (APRDL). He subsequently led the Novel Device Research Group there in Austin, Texas. He performed path-finding research on a variety of advanced semiconductor devices that included Strained-Si-On-Silicon, FinFETs, FDSOI, and Nano-crystal Flash Memory. Aaron graduated from the University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors & Graduated as Edmund J. James’ Scholar), M.Sc., and Ph.D. degrees in Electrical Engineering. He was awarded the 2001 Gregory Stillman Semiconductor Research Award for his Ph.D. work. He has published over 300 technical papers and holds more than 50 U.S. patents for inventions in the field of advanced electronics. Among his notable recognitions include the 2014 Compound Semiconductor Industry Innovation award for his research group’s break-though III-V FinFET work. In 2013, he was given the Best Collaboration Award from Samsung Electronics Korea for R&D collaborations contributing towards its Semiconductor R&D Center. Aaron received the 2010 Young Alumni Achievement Award from his Alma Mater, University of Illinois, for his contribution to advanced transistor R&D, as well.
Jan Vobecky - Professor
Solid-State Power and High Voltage Devices
William S. Wong - Thin Film Transistors
Yifeng Wu - Solid-State Power and High Voltage Devices; Compound Semiconductor Devices
- Electron Device Letters
- Journal of the Electron Devices Society
- Transactions on Electron Devices
- Journal of Microelectromechanical Systems
- Journal of Photovoltaics
- Transactions on Device and Materials Reliability
- Transactions on Semiconductor Manufacturing
- TOC Email Alerts
- EDS Newsletter
- Journal of Electronic Materials
- EDS Guide to State-of-the-Art Electron Devices
- EDS 50th Anniversary Booklet
- IEEE Guidelines for Authors
- IEEE Guidelines on Legitimacy of Authorship
- IEEE Intellectual Property Rights
- Editorials for Authors and Reviewers
- Publication Representatives
- Publication Editors in Chief
- Publications Committee