Editors' Picks
Every month, EDL Editors select a small number of particularly remarkable articles as Editors' Picks. These are highlighted on the issue cover and enjoy temporary (one month) Open Access. One of these articles is further selected as Cover Article and prominently featured in its main cover graphics.
Volume 42, Issue 2 (February 2021)
- A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach
- Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
- There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
- Egg-White-Based Polymer Memristors With Competing Electronic-Ionic Effect and Timescale-Dependent Current Modulation
- Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube
Volume 42, Issue 1 (January 2021)
- Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation from Measured Data
- Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters
- Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO
- SrSnO3 Metal-Semiconductor Field-Effect Transistor with GHz Operation
- The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC
Volume 41, Issue 12 (December 2020)
- Gate-All-Around FET Design Rule for Suppression of Excess Non-Linearity
- Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application
- Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection
- Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
- A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power
Volume 41, Issue 11 (November 2020)
- Highly Scaled, High Endurance, -Gate, Nanowire Ferroelectric FET Memory Transistors
- Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection
- Novel Homogenization Field Technology in Lateral Power Devices
- Flexible Dual-Wave Mode AlN-Based Surface Acoustic Wave Device on Polymeric Substrate
Volume 41, Issue 10 (October 2020)
- Ru/N-Polar GaN Schottky Diode With Less Than 2 A/cm Reverse Current
- AlGaN/GaN Schottky-Gate HEMTs With UV/O-Treated Gate Interface
- Unveiling the Apparent Negative Capacitance Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors
- High-Performance and Multifunctional Devices-Based Optoelectronic Memory With the 2D Narrow Bandgap Bi2Te2.7Se0.3
- GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication
Volume 41, Issue 9 (September 2020)
- Automatic Selection of Structure Parameters of Silicon on Insulator Lateral Power Device Using Bayesian Optimization
- Correlation of Space Charge Limited Current and -Ray Response of CdxZn1-xTe1-ySey Room-
Temperature Radiation Detectors - High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays
- Capacitive Trench-Based Charge Transfer Device
- Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines
Volume 41, Issue 8 (August 2020)
- Backside Illuminated 3-D Photosensitive Thin-Film Transistor on a Scintillating Glass Substrate for Indirect-Conversion X-Ray Detection
- 1000-Pixels per Inch Transistor Arrays Using Multi-Level Imprint Lithography
- Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector
- An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing
Volume 41, Issue 7 (July 2020)
- Color Difference and Thermal Stability of Flexible Transparent InGaN/GaN multiple QuantumWells Mini-LED Arrays
- Assist Gate MOSFETs for improvement of On-Resistence and Turn-Off Loss Trade-Off
- Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond
- Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps
- A Study of SiC Nanostructures Grown on Si Substrate as Thermionic Cathode and its Work Function Lowering Effect
Volume 41, Issue 6 (June 2020)
- Performance Improvement by Blanket Baron Implant in the Sigma-Shaped Trench Before The Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
- Field-Plated Lateral Ga2O3 MOSFETs with Polymer Passivation and 8.03 kV Breakdown Voltage
- Conductive Filment Localization Within Crossbar Resistative Memories by Scanning Joule Expansion Microscopy
- A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range
- Rectified Tunnel Magnetosesistance Device With High On/Off Ratio for In-Memory Computing
Volume 41, Issue 5 (May 2020)
- Gate-Controllable Electronic Trap Detection in Dielectrics
- Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer
- Effect of Pillar Ripple on Static and Dynamic Trade-Offs in Superjunction MOSFETs
- Crack-Based Complementary Nanoelectromechanical Switches for Reconfigurable Computing
Volume 41, Issue 4 (April 2020)
- Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
- An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor with Lanthanum Hexaboride Gate Material
- Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors
- Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects
Volume 41, Issue 3 (March 2020)
- High-Performance AIGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base
- Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
- Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process
- 4H-SiC Super-Junction JFET: Design and Experimental Demonstration
- Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory
Volume 41, Issue 2 (February 2020)
- Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET
- Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
- High-Quality Single Crystal Perovskite for Highly Sensitive X-Ray Detector
- Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect
- Enhancement-Mode $beta$ - Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Volume 41, Issue 1 (January 2020)
- An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC
- Ultra-Low Contact Resistivity of $0.1~Omegadot$ mm for Au-Free TixAIy Alloy Contact on Non-Recessed i-ALGaN/GaN
- Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4GHz Extrinisic Cutoff Frequency Fabricated Using Adhesion Lithography
- Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack
- Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions
