Editors' Picks
Every month, EDL Editors select a small number of particularly remarkable articles as Editor's Picks. These are highlighted on the issue cover and enjoy temporary (one month) Open Access. One of these articles is further selected as Cover Article and prominently featured in its main cover graphics.
Volume 41, Issue 6 (June 2020)
- Performance Improvement by Blanket Baron Implant in the Sigma-Shaped Trench Before The Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
- Field-Plated Lateral Ga2O3 MOSFETs with Polymer Passivation and 8.03 kV Breakdown Voltage
- Conductive Filment Localization Within Crossbar Resistative Memories by Scanning Joule Expansion Microscopy
- A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range
- Rectified Tunnel Magnetosesistance Device With High On/Off Ratio for In-Memory Computing
Volume 41, Issue 5 (May 2020)
- Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgTe/AIO/TIO-Based Hybrid Memory Device
- Gate-Controllable Electronic Trap Detection in Dielectrics
- Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer
- Effect of Pillar Ripple on Static and Dynamic Trade-Offs in Superjunction MOSFETs
- Crack-Based Complementary Nanoelectromechanical Switches for Reconfigurable Computing
Volume 41, Issue 4 (April 2020)
- Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment
- Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
- An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor with Lanthanum Hexaboride Gate Material
- Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors
- Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects
Volume 41, Issue 3 (March 2020)
- High-Performance AIGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base
- Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
- Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process
- 4H-SiC Super-Junction JFET: Design and Experimental Demonstration
- Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory
Volume 41, Issue 2 (February 2020)
- Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET
- Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
- High-Quality Single Crystal Perovskite for Highly Sensitive X-Ray Detector
- Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect
- Enhancement-Mode $beta$ - Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Volume 41, Issue 1 (January 2020)
- An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC
- Ultra-Low Contact Resistivity of $0.1~Omegadot$ mm for Au-Free TixAIy Alloy Contact on Non-Recessed i-ALGaN/GaN
- Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4GHz Extrinisic Cutoff Frequency Fabricated Using Adhesion Lithography
- Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack
- Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions
