2023 Archived Content

Volume 45, Issue 2 (February 2024) 

• One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing
• Al-nanoparticle sensitized β-Ga2O3-based solar-blind photodetector fabricated via focused ion beam micro/nano processing
• Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels
• Demonstration of 1200-V E-mode GaN-on-Sapphire Power Transistor with Low Dynamic ON-Resistance Based on Active Passivation Technique
• Energy-efficient Ferroelectric-FET-based Agent with Memory Trace for Enhanced Reinforcement Learning

 

Volume 45, Issue 1 (January 2024)

• Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary 
• Antiferroelectric Negative Capacitance Transistor for Low Power Consumption 
• Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector with Good Wavelength Selectivity and Low Driving Voltage
• On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory
• Analytical Modeling of Cryogenic Subthreshold Currents in 22 nm FDSOI Technology

 

Volume 44, Issue 12 (December 2023)  

• Extraction of Sub-threshold Mobility in Ga2O3 Lateral Transistors from AC Conductance 
• Toward Low-thermal-budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation 
• 3D Vertical Self-Rectifying Memristor Arrays with Split-cell Structure, Large Nonlinearity (>104) and fJ-level Switching Energy
• Thermal Stability of the Avalanche-like Breakdown Performance in Conjugated Polymer-based Lateral Power Devices 
• Monolithically 3-D Integrated Nanoelectromechanical (NEM) Configuration Memory for CMOS-NEM Hybrid Demultiplexer

 

Volume 44, Issue 11 (November 2023)  

• Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2
• Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistor
• Theoretical Foundation of Electronic Metadevices
• Programmable Delay Element using Dual-Port FeFET for Post-Silicon Clock Tuning

• High-Density LED Array Based on Epitaxial Slice Damage-Free Process and Its Single-Contact Operation Mode with Low Crosstalk

 

Volume 44, Issue 10 (October 2023)  

• Robust Avalanche in 1.7 kV Vertical GaN Diodes with a Single-Implant Bevel Edge Termination
• A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs with Ultralow Power Consumption
• A New Multi-dimensional Depletion Concept of Homogenization Field Devices
• Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices
• Impact of SAW Slowness Shape on Anti-resonance Quality Factor of RF SAW Resonators

 

Volume 44, Issue 9 (September 2023)  

• Enhanced hole transport in Ni/Y₂O₃/n-4H-SiC MOS for self-biased radiation detection
• Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO₂ in ZrO₂ 
• Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
• Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications
• Demonstration of the longwave type-II superlattice InAs/InAsSb cascade photodetector for high operating temperature

 

Volume 44, Issue 8 (August 2023)  

• Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
• Re-Annealing-Induced Recovery in 7nm  Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
• Wafer-Scale Monolithic Integration of blue micro-light-emitting diodes and Green/Red Quantum Dots for Full-Color Displays
• Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Probabilistic Computing
• Adaptively responsive self-powered bionic auditory device for sleep health monitoring

 

Volume 44, Issue 7 (July 2023)  

• Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector with a Ge Intercalated Structure 
• A Multi-Bit CAM Design with Ultra-High Density and Energy Efficiency Based on FeFET NAND
• Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric
• Vertical SnS2/Cr–SnS2 n–n Homostructure for High-Responsivity and Fast-Response 405 nm Near-Ultraviolet Detectors
•  Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs

 

 Volume 44, Issue 6 (June 2023) 

• Surface Acoustic Wave Resonators using a Novel ɛ-Ga2O3 Piezoelectric Film grown on Sapphire
• 2D Organic-inorganic Perovskite (ATHP)2PbI4 with Huge Out-of-plane Piezoelectric Properties
• Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction
• Understanding the electroluminescence mechanism of CdSe/ZnS quantum-dot light-emitting diodes with a focus on charge carrier behavior in quantum-dot emissive layers
• A Superior Reverse Characteristics of 1.2kV 4H-SiC Planar JBS diode Employing Channeling Implantation

    

Volume 44, Issue 5 (May 2023) 

• Winner-Takes-All Neural Network Based on 3D NAND Flash With 1-Bit Erase Scheme
• A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current

•  High Baliga’s Figure of Merit Amorphous InGaZnO Power Transistor With Ultra-Thin Indium Zinc Oxide Buried Layer

•  Ultra-High Q of 11000 in Surface Acoustic Wave Resonators by Dispersive Modulation

• Digitize the Human Body by Backscattering Based Nano-Tattoos: Battery-Free Sensing

   

Volume 44, Issue 4 (April 2023) 

• Transparent Multi-Level NAND Flash Memory and Circuits Based on ZnO Thin Film Transistor

• Improving Hot Carrier Reliability of Organic-TFTs by Extended Electrode

• Fully-Depleted Silicon-on-Insulator (FDSOI) Based Complementary Phototransistors for In-Sensor Vector-Matrix Multiplication

• X–Ka Band Epitaxial ScAlN/AlN/NbN/SiC High-Overtone Bulk Acoustic Resonators

• NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector

 

Volume 44, Issue 3 (March 2023)

• Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes
• Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors
• InGaN Color Tunable Full Color Passive Matrix
• Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration with µLED
• CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing

 

Volume 44, Issue 2 (February 2023) 

• Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters
• Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage
• Characteristics of Epitaxial Graphene on SiC/Si Substrates in the Radio Frequency Spectrum
• High-Performance Cascaded Surface-Illuminated Ge-on-Si APD Array
• Carbon Nanotube Radiofrequency Transistors With fT/fMAX of 376/318 GHz

 

Volume 44, Issue 1 (January 2023)

• Multilevel Cell Ferroelectric HfZrO FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer
• 59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator
• Non-Volatile Nano-Electro-Mechanical Switches and Hybrid Circuits in a 16 nm CMOS Back-End-of-Line Process
• Experimental Demonstration of Compact S-Band MW-Level Metamaterial-Inspired Klystron
• A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity