Lastest Issue: Table of Contents (TOC)
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- Front Cover
- IEEE Electron Device Letters Publication Information
- Table of Contents
- Compact Modeling of Quantum Transport in 55-nm MOSFETs at Cryogenic Temperatures
- Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate
- Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode
- High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
- Endurance Improvement of GaN Bipolar Charge Trapping Memory With Back Gate Injection
- RF p-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
- Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures
- Cost Effective Fabrication and Current-Voltage Characteristics of ZnO Homojunction Based n-p-n Bipolar Junction Transistor
- Electron-Spin Filter Based on Dresselhaus Spin-Orbit-Coupling Modulated Double-Layered Semiconductor Microstructure
- High-Sensitivity Solar-Blind Photodetector Based on β-Ga2O3 Schottky Junction Under Forward and Reverse Bias
- High-CRI White Light-Emitting Diodes With Long T50 Lifetime From Perovskite-Inspired CsCu2I3 Halide
- Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement
- Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film
- MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications
- Micro-LED Pixel Circuit Using Low-Temperature Poly-Si Oxide TFTs With Fast Rise and Fall Times of Pulse Width Modulation for Low Gray Expression
- Atomic Layer Deposition of GeSb2Te4 Thin Films for Reliable Phase Change Memory With a High Dynamic Range
- Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism
- Low-Thermal-Budget Fabrication of Transparent Ferroelectric Thin-Film Transistors on Glass Substrates
- Voltage Bias Scheme Optimization in FeFET Based Neural Network System
- Defect Engineering of BTe Ovonic Threshold Switch (OTS) With Nitrogen Doping for Improved Electrical and Reliability Performance
- Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films
- Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films
- The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf0.5Zr0.5O2 Ferroelectric Capacitor
- Micro Light-Emitting Diode Pixel Circuit Based on Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Pulse Width Modulation
- A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects
- Two-Dimensional MSi2N4 Heterostructure P-Type Transistors With Sub-Thermionic Transport Performances
- Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors
- Digital Microfluidic Lab-on-a-Chip on a TFT Glass Substrate Enabling Point-of-Care Testing
- Three-Dimensional Integration of Switching and Light-Sensitive Organic Transistors in Solution Processes for Flexible High-Resolution Active-Matrix Optical Imager
- High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate Dielectrics
- Amorphous Ga2O3/IGZO Heterojunction Thin-Film Solar-Blind Phototransistors With High Responsivity
- An Optoelectronic Synaptic Transistor With Autotuning Active Photoadaptation for Artificial Visual Perception
- In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance
- High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate
- A Low-Temperature Processed Organic Hole-Blocking Contact Layer for Amorphous Selenium X-Ray Photoconductor
- Compact Wideband Millimeter-Wave ESD Protection Device With Transformer-Embedded DCSCR
- Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging
- Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area
- Cryogenic Hysteresis in 110 nm Bulk Silicon MOSFETs for Capacitorless Memory Applications
- Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures
- Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model
- Broadband High-Sensitivity Thin-Film LiNbO3 Based E-Field Sensor With LF-Shaped Electrode
- Metamaterial-Inspired Backward Wave Oscillator Using a Dual Band Coaxial Coupler
- First Demonstration of Frequency-Locked Operation of a 170 GHz/1 MW Gyrotron
- High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film
- Hardware-Based Noisy Deep Q-Networks Using Low-Frequency Noise of Synaptic Devices for Efficient Exploration
- Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing
- Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage
- EDS Meetings Calendar
- IEEE Electron Device Letters Information for Authors
- IEEE Transactions on Electron Devices Table of Contents
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