Lastest Issue: Table of Contents (TOC)
Below is the Table of Contents for the latest edition of EDL. Click an article title to view within IEEE Xplore.
- Front cover
- IEEE Electron Device Letters
- Table of contents
- Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the MetalFerroelectricInsulatorSemiconductor Capacitors
- p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
- Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop