2020 Archived Content
Volume 41, Issue 12 (December 2020)
- Gate-All-Around FET Design Rule for Suppression of Excess Non-Linearity
- Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application
- Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection
- Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
- A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power
Volume 41, Issue 11 (November 2020)
- Highly Scaled, High Endurance, -Gate, Nanowire Ferroelectric FET Memory Transistors
- Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection
- Novel Homogenization Field Technology in Lateral Power Devices
- Flexible Dual-Wave Mode AlN-Based Surface Acoustic Wave Device on Polymeric Substrate
Volume 41, Issue 10 (October 2020)
- Ru/N-Polar GaN Schottky Diode With Less Than 2 A/cm Reverse Current
- AlGaN/GaN Schottky-Gate HEMTs With UV/O-Treated Gate Interface
- Unveiling the Apparent Negative Capacitance Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors
- High-Performance and Multifunctional Devices-Based Optoelectronic Memory With the 2D Narrow Bandgap Bi2Te2.7Se0.3
- GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication
Volume 41, Issue 9 (September 2020)
- Automatic Selection of Structure Parameters of Silicon on Insulator Lateral Power Device Using Bayesian Optimization
- Correlation of Space Charge Limited Current and -Ray Response of CdxZn1-xTe1-ySey Room-
Temperature Radiation Detectors - High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays
- Capacitive Trench-Based Charge Transfer Device
- Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines
Volume 41, Issue 8 (August 2020)
- Backside Illuminated 3-D Photosensitive Thin-Film Transistor on a Scintillating Glass Substrate for Indirect-Conversion X-Ray Detection
- 1000-Pixels per Inch Transistor Arrays Using Multi-Level Imprint Lithography
- Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector
- An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing
Volume 41, Issue 7 (July 2020)
- Color Difference and Thermal Stability of Flexible Transparent InGaN/GaN multiple QuantumWells Mini-LED Arrays
- Assist Gate MOSFETs for improvement of On-Resistence and Turn-Off Loss Trade-Off
- Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond
- Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps
- A Study of SiC Nanostructures Grown on Si Substrate as Thermionic Cathode and its Work Function Lowering Effect
Volume 41, Issue 6 (June 2020)
- Performance Improvement by Blanket Baron Implant in the Sigma-Shaped Trench Before The Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
- Field-Plated Lateral Ga2O3 MOSFETs with Polymer Passivation and 8.03 kV Breakdown Voltage
- Conductive Filment Localization Within Crossbar Resistative Memories by Scanning Joule Expansion Microscopy
- A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range
- Rectified Tunnel Magnetosesistance Device With High On/Off Ratio for In-Memory Computing
Volume 41, Issue 5 (May 2020)
- Gate-Controllable Electronic Trap Detection in Dielectrics
- Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer
- Effect of Pillar Ripple on Static and Dynamic Trade-Offs in Superjunction MOSFETs
- Crack-Based Complementary Nanoelectromechanical Switches for Reconfigurable Computing
Volume 41, Issue 4 (April 2020)
- Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
- An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor with Lanthanum Hexaboride Gate Material
- Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors
- Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects
Volume 41, Issue 3 (March 2020)
- High-Performance AIGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base
- Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
- Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process
- 4H-SiC Super-Junction JFET: Design and Experimental Demonstration
- Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory
Volume 41, Issue 2 (February 2020)
- Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET
- Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
- High-Quality Single Crystal Perovskite for Highly Sensitive X-Ray Detector
- Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect
- Enhancement-Mode $beta$ - Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Volume 41, Issue 1 (January 2020)
- An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC
- Ultra-Low Contact Resistivity of $0.1~Omegadot$ mm for Au-Free TixAIy Alloy Contact on Non-Recessed i-ALGaN/GaN
- Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4GHz Extrinisic Cutoff Frequency Fabricated Using Adhesion Lithography
- Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack
- Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions
