Editors' Picks
Every month, EDL Editors select a small number of particularly remarkable articles as Editors' Picks. These are highlighted on the issue cover and enjoy temporary (one month) Open Access. One of these articles is further selected as Cover Article and prominently featured in its main cover graphics.
Volume 45, Issue 5 (May 2024)
- Mode-Switchable Localized Surface Plasmon Resonator for W/D Dual-Band CMOS Oscillator
- First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications
- Interstitial Alkali Metal Ions Regulating the Phase Distributions Enabling Efficient and Stable Red Perovskite Light-Emitting Diodes
- Ultrahigh-Sensitivity Coupled Cantilever and Dual-cavity Piezoelectric Micromachined Ultrasonic Transducers
- Capacitive Synaptor with Overturned Charge Injection for Compute-in-Memory
Volume 45, Issue 4 (April 2024)
- Single-crystalline Bulk Acoustic Wave Resonators Fabricated with AlN Film Grown by a Combination of PLD and MOCVD Methods
- La Doped HZO based 3D-Trench Metal- Ferroelectric-Metal Capacitors with High Endurance (>10¹²) for FeRAM Applications
- Organic Ternary Logic Inverter using Negative Transconductance Pull-Down Switching Transistor
- Self-Curable Synaptor with Tri-node Charge-Trap FinFET for Semi-Supervised Learning
- 1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates
Volume 45, Issue 3 (March 2024)
- Is it possible to make thin p-GaN layer for AlGaN-based deep ultraviolet micro light emitting diodes?
- Effect of doping concentration on intrinsic ferroelectric properties of HfLaO-based ferroelectric memory
- Selective Erase Operation for Multiple Strings of 3D Ferroelectric (Fe)-NAND Flash Memory
- The RGATE: an 8-in-1 Polymorphic Logic Gate Built from Reconfigurable Field Effect Transistors
- Heterogeneous Integration of Diamond-on-Chip-on-Glass Interposer for Efficient Thermal Management
Volume 45, Issue 2 (February 2024)
- One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing
- Al-nanoparticle sensitized β-Ga2O3-based solar-blind photodetector fabricated via focused ion beam micro/nano processing
- Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels
- Demonstration of 1200-V E-mode GaN-on-Sapphire Power Transistor with Low Dynamic ON-Resistance Based on Active Passivation Technique
- Energy-efficient Ferroelectric-FET-based Agent with Memory Trace for Enhanced Reinforcement Learning
Volume 45, Issue 1 (January 2024)
- Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary
- Antiferroelectric Negative Capacitance Transistor for Low Power Consumption
- Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector with Good Wavelength Selectivity and Low Driving Voltage
- On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory
- Analytical Modeling of Cryogenic Subthreshold Currents in 22 nm FDSOI Technology
